1.2 V DRAM Modules
from Advantech
16G DDR4-3200 1GX8 1.2V SAM -20~85 ℃. SAM Original Chip. Industrial Design for Improved Reliability. PCB: 30 μ gold finger. Anti-sulfuration. SEMI Wide-temp Support -20~85 ℃ [See More]
- Supply Voltage: 1.2V; 1.2 V
- Operating Temperature: -4 to ?
- Capacity: 16000
from Advantech
16G SO-DDR4-3200 1GX8 1.2V SAM -20~85 ℃. SAM Original Chip. Industrial Design for Improved Reliability. PCB: 30 μ gold finger. Anti-sulfuration. Semi Wide-temp Support -20~85 ℃ [See More]
- Supply Voltage: 1.2V; 1.2 V
- Operating Temperature: -4 to ?
- Capacity: 16000
from Advantech
32G DDR4-3200 2GX8 1.2V SAM-20~85 ℃. SAM Original Chip. Industrial Design for Improved Reliability. PCB: 30 μ gold finger. Anti-sulfuration. SEMI Wide-temp Support -20~85 ℃ [See More]
- Supply Voltage: 1.2V; 1.2 V
- Operating Temperature: -4 to ?
- Capacity: 32000
from Advantech
32G SO-DDR4-3200 2GX8 1.2V SAM -20~85 ℃. SAM Original Chip. Industrial Design for Improved Reliability. PCB: 30 μ gold finger. Anti-sulfuration. Semi Wide-temp Support -20~85 ℃ [See More]
- Supply Voltage: 1.2V; 1.2 V
- Operating Temperature: -4 to ?
- Capacity: 32000
from Advantech
4G DDR4-3200 512X16 1.2V SAM -20~85 ℃. SAM Original Chip. Industrial Design for Improved Reliability. PCB: 30 μ gold finger. Anti-sulfuration. SEMI Wide-temp Support -20~85C [See More]
- Supply Voltage: 1.2V; 1.2 V
- Operating Temperature: -4 to ?
- Capacity: 4000
from Advantech
4G DDR4-3200 512X16 1.2V SAM -20~85 ℃. SAM Original Chip. Industrial Design for Improved Reliability. PCB: 30 μ gold finger. Anti-sulfuration. Semi Wide-temp Support -20~85 ℃ [See More]
- Supply Voltage: 1.2V; 1.2 V
- Operating Temperature: -4 to ?
- Capacity: 4000
from Advantech
8G DDR4-3200 1GX8 1.2V SAM -20~85 ℃. SAM Original Chip. Industrial Design for Improved Reliability. PCB: 30 μ gold finger. Anti-sulfuration. SEMI Wide-temp Support -20~85 ℃ [See More]
- Supply Voltage: 1.2V; 1.2 V
- Operating Temperature: -4 to ?
- Capacity: 8000
from Advantech
8G SO-DDR4-3200 1GX8 1.2V SAM -20~85 ℃. SAM Original Chip. Industrial Design for Improved Reliability. PCB: 30 μ gold finger. Anti-sulfuration. Semi Wide-temp Support -20~85 ℃ [See More]
- Supply Voltage: 1.2V; 1.2 V
- Operating Temperature: -4 to ?
- Capacity: 8000
from Advantech
Advantech 16G DDR4-3200 1GbX8 1.2V SAM -40~85C. DDR4 3200Mhz Unbuffered DIMM. 30u" Gold Plating Thickness. Anti-sulfurization resistance. 1.2V power consumption. Samsung original chip. 100% tested for stability, compatibility and performance [See More]
- Supply Voltage: 1.2V; 1.2 V
- Operating Temperature: -40 to 185
- Capacity: 16000
from Advantech
Advantech 16G DDR4-3200 1GbX8 1.2V SAM -40~85C. DDR4 3200Mhz Unbuffered DIMM. 30u" Gold Plating Thickness. Anti-sulfurization resistance. 1.2V power consumption. Samsung original chip. wide temperatures from -40 ° to 85 °C [See More]
- Supply Voltage: 1.2V; 1.2 V
- Operating Temperature: -40 to 185
- Capacity: 16000
from Advantech
Advantech 16G R-DDR4-3200 1GX8 1.2V Samsung Chip -40~85C. Registered DIMM. 30u" Gold Plating Thickness. Anti-sulfurization resistance. 1.2V power consumption. Samsung original chip. wide temperatures from -40 ° to 85 °C [See More]
- Supply Voltage: 1.2V; 1.2 V
- Operating Temperature: -40 to 185
- Capacity: 16000
from Advantech
Advantech 16G SO-DDR4-3200 1GbX8 1.2V SAM -40~85C. DDR4 3200Mhz Unbuffered SO-DIMM. 30u" Gold Plating Thickness. Anti-sulfurization resistance. 1.2V power consumption. Samsung original chip. 100% tested for stability, compatibility and performance [See More]
- Supply Voltage: 1.2V; 1.2 V
- Operating Temperature: -40 to 185
- Capacity: 16000
from Advantech
Advantech 16G SO-DDR4-3200 1GbX8 1.2V SAM -40~85C. DDR4 3200Mhz Unbuffered SO-DIMM. 30u" Gold Plating Thickness. Anti-sulfurization resistance. 1.2V power consumption. Samsung original chip. wide temperatures from -40 ° to 85 °C [See More]
- Supply Voltage: 1.2V; 1.2 V
- Operating Temperature: -40 to 185
- Capacity: 16000
from Advantech
Advantech 16GB DDR4-3200 1GbX8 1.2V ECC Samsung Chip. 16GB. Speed 3200MHz. 30u" Gold Plating Thickness. Anti-sulfurization resistance. ECC [See More]
- Supply Voltage: 1.2V; 1.2 V
- Operating Temperature: 32 to 185
- Capacity: 16000
from Advantech
Advantech 16GB DDR4-3200 1GbX8 1.2V Samsung Chip. 16GB. Speed 3200MHz. 30u" Gold Plating Thickness. Anti-sulfurization resistance. Unbuffered [See More]
- Supply Voltage: 1.2V; 1.2 V
- Operating Temperature: 32 to 185
- Capacity: 16000
from Advantech
Advantech 16GB SO-DDR4-3200 1GbX8 1.2V ECC Samsung Chip. 16GB. Speed 3200MHz. 30u" Gold Plating Thickness. Anti-sulfurization resistance. ECC [See More]
- Supply Voltage: 1.2V; 1.2 V
- Operating Temperature: 32 to 185
- Capacity: 16000
from Advantech
Advantech 16GB SO-DDR4-3200 1GbX8 1.2V Samsung Chip. 16GB. Speed 3200MHz. 30u" Gold Plating Thickness. Anti-sulfurization resistance. Unbuffered [See More]
- Supply Voltage: 1.2V; 1.2 V
- Operating Temperature: 32 to 185
- Capacity: 16000
from SK Hynix
WIO2 (Wide IO 2) is the strong candidate of future mobile DRAM achieving high bandwidth (51.2GB/s, up to 68GB/s), advanced power efficiency, and small form factor. [See More]
- Supply Voltage: 1.2V; 1.8V
- DRAM Type: DDR_SDRAM (optional feature)
- Capacity: 64 to 2000
- Operating Temperature: -22 to 185
from Shenyang Vhandy Technology Co., Ltd.
The GCAN-401 is a CAN-Bus storage, used for saving CAN-Bus data. This module can save the real-time data, whose function is to realize to collect history CAN-Bus data and analyze fault message. Function. This module has integrated with system clock and document system.You can save and manage the... [See More]
- Supply Voltage: 1.2V; 1.5V; 1.8V; 2.5V; 2.7V; 3V