1.2 V DRAM Modules

16G DDR4 2400 288Pin 2GX4 Registered VLP 1.2V -40~85 ℃ Samsung Chip. DDR4-2400 Registered DIMM. Very Low Profile. Wide temperature. 30 μ" gold plating thickness. 1.2V Power Consumption. Provides better reliability, availability and serviceability (RAS) and improves data integrity [See More]

• Supply Voltage: 1.2V; 1.2 V
• Operating Temperature: -40 to 185

• Capacity: 16000

The GCAN-401 is a CAN-Bus storage, used for saving CAN-Bus data. This module can save the real-time data, whose function is to realize to collect history CAN-Bus data and analyze fault message. Function. This module has integrated with system clock and document system.You can save and manage the... [See More]

• Supply Voltage: 1.2V; 1.5V; 1.8V; 2.5V; 2.7V; 3V

DDR4-2400 Registered DIMM. – Standard height & Very Low Profile. 30 μ" gold plating thickness (IPC-2221 Standard). 1.2V Power Consumption. Provides better reliability, availability and serviceability (RAS) and improves data integrity [See More]

• Supply Voltage: 1.2V; 1.2 V
• Operating Temperature: 32 to 203

• Capacity: 16000

SQRAM is Industrial Grade DRAM memory. All SQRAM are designed with original IC chip and adopt a rigorous test program to ensure durable and reliable quality. SQRAM are fixed IC generation for quality and compatibility controlled. Low voltage 1.35V is backward compatible with 1.5V DDR3 moduleSDRAM... [See More]

• Supply Voltage: 1.2V; 1.2 V +/- 0.06 V
• Pins: 288

• Capacity: 4000
• Form Factor: uDIMM; 288-Pin

DDR4 2666 Registered DIMM. – Standard height. 30u Golden Coating Thickness (IPC-2221 Standard). 1.2V Power Consumption. Low-power auto self- refresh (LPASR). Provides better reliability, availability and serviceability (RAS) and improves data integrity [See More]

• Supply Voltage: 1.2V; 1.2 V
• Operating Temperature: 32 to 185

• Capacity: 32000

4G DDR4 2400 288Pin 512MBX8 Registered VLP 1.2V -40~85 ℃ Samsung Chip. DDR4-2400 Registered DIMM. Very Low Profile. Wide temperature. 30 μ" gold plating thickness. 1.2V Power Consumption. Provides better reliability, availability and serviceability (RAS) and improves data integrity [See More]

• Supply Voltage: 1.2V; 1.2 V
• Operating Temperature: -40 to 185

• Capacity: 4000

8G DDR4 2400 288Pin 1GX8 Registered VLP 1.2V -40~85 ℃ Samsung Chip. DDR4-2400 Registered DIMM. Very Low Profile. Wide temperature. 30 μ" gold plating thickness. 1.2V Power Consumption. Provides better reliability, availability and serviceability (RAS) and improves data integrity [See More]

• Supply Voltage: 1.2V; 1.2 V
• Operating Temperature: -40 to 185

• Capacity: 8000

DDR4-2400 Registered DIMM. – Standard height & Very Low Profile. 30 μ" gold plating thickness (IPC-2221 Standard). 1.2V Power Consumption. Provides better reliability, availability and serviceability (RAS) and improves data integrity [See More]

• Supply Voltage: 1.2V; 1.2 V
• Operating Temperature: 32 to 203

• Capacity: 8000

DDR4-2400 Registered DIMM. – standard height. 30 μ" gold plating thickness (IPC-2221 Standard). 1.2V power consumption. Low-power auto self- refresh (LPASR). Provides better reliability, availability and serviceability (RAS) and improves data integrity [See More]

• Supply Voltage: 1.2V; 1.2 V
• Operating Temperature: 32 to 185

• Capacity: 16000

Advantech 16G DDR4-2400 260Pin 1GX8 1.2V ECC Hynix Chip. DDR4 2400 ECC SO DIMM. 30 μ" gold plating thickness (IPC-2221 Standard). 1.2V Power Consumption. Serial presence detect with EEPROM. Support ECC error detection and correction. 100% tested for stability, compatibility and performance. [See More]

• Supply Voltage: 1.2V; 1.2 V
• Operating Temperature: 32 to 185

• Capacity: 16000

Advantech 16G DDR4-2400 288Pin 1GX8 1.2V ECC Hynix Chip. DDR4-2400 ECC DIMM. 30 μ" gold plating thickness (IPC-2221 standard). 1.2V power consumption. Serial presence detect with EEPROM. Support ECC error detection and correction. 100% tested for stability, compatibility and performance [See More]

• Supply Voltage: 1.2V; 1.2 V
• Operating Temperature: 32 to 185

• Capacity: 16000

DDR4 2400 ECC DIMM. 30 μ" gold plating thickness (IPC-2221 standard). 1.2V power consumption. Serial presence detect with EEPROM. Support ECC error detection and correction. 100% tested for stability, compatibility and performance. Samsung original chip [See More]

• Supply Voltage: 1.2V; 1.2 V
• Operating Temperature: 32 to 185

• Capacity: 16000

Advantech 16G DDR4-2400 288Pin 1GX8 1.2V Registered Hynix Chip. DDR4-2400 Registered DIMM. 30 μ" gold plating thickness (IPC-2221 standard). 1.2V power consumption. Serial presence detect with EEPROM. Support ECC error detection and correction. 100% tested for stability, compatibility and... [See More]

• Supply Voltage: 1.2V; 1.2 V
• Operating Temperature: 32 to 185

• Capacity: 16000

DDR4-2400 Unbuffered DIMM. 30 μ" gold plating thickness (IPC-2221 Standard). 1.2V Power Consumption. RoHS compliant. Hynix Original Chip [See More]

• Supply Voltage: 1.2V; 1.2 V
• Operating Temperature: 32 to 185

• Capacity: 16000

DDR4-2400 Unbuffered DIMM. 30 μ" gold plating thickness. 1.2V power consumption. Samsung original chip [See More]

• Supply Voltage: 1.2V; 1.2 V
• Operating Temperature: 32 to 185

• Capacity: 16000

DDR4 2666Mhz Unbuffered UDIMM. 30 μ" gold plating thickness. 1.2V power consumption. 100% tested for stability, compatibility and performance. Samsung original chip [See More]

• Supply Voltage: 1.2V; 1.2 V
• Operating Temperature: 32 to 185

• Capacity: 16000

DDR4 2666Mhz SO-DIMM / UDIMM with ECC. 30 μ" gold plating thickness. Anti-sulfuration resistor. Serial presence detect with EEPROM. Support ECC error detection and correction. 100% tested for stability, compatibility and performance. Samsung original chip [See More]

• Supply Voltage: 1.2V; 1.2 V
• Operating Temperature: 32 to 185

• Capacity: 16000

DDR4 2666Mhz Registered DIMM – Standard height. 30 μ" gold plating thickness. Anti-sulfur resistor. 1.2V power consumption. 100% tested for stability, compatibility and performance. Samsung original chip [See More]

• Supply Voltage: 1.2V; 1.2 V
• Operating Temperature: 32 to 185

• Capacity: 16000

DDR4 2400 ECC SO-DIMM. 30 μ" gold plating thickness (IPC-2221 standard). 1.2V power consumption. Serial presence detect with EEPROM. Support ECC error detection and correction. 100% tested for stability, compatibility and performance. Samsung original chip [See More]

• Supply Voltage: 1.2V; 1.2 V
• Operating Temperature: 32 to 185

• Capacity: 16000

DDR4-2400 Unbuffered SO-DIMM. 30 μ" gold plating thickness (IPC-2221 Standard). 1.2V Power Consumption. RoHS compliant. Hynix Original Chip [See More]

• Supply Voltage: 1.2V; 1.2 V
• Operating Temperature: 32 to 185

• Capacity: 16000

DDR4-2400 Unbuffered SO-DIMM. 30 μ" gold plating thickness. 1.2V power consumption. Samsung original chip [See More]

• Supply Voltage: 1.2V; 1.2 V
• Operating Temperature: 32 to 185

• Capacity: 16000

DDR4 2666Mhz Unbuffered SO-DIMM. 30 μ" gold plating thickness. 1.2V power consumption. 100% tested for stability, compatibility and performance. Samsung original chip [See More]

• Supply Voltage: 1.2V; 1.2 V
• Operating Temperature: 32 to 185

• Capacity: 16000

DDR4 2666Mhz SO-DIMM / UDIMM with ECC. 30 μ" gold plating thickness. Anti-sulfuration resistor. Serial presence detect with EEPROM. Support ECC error detection and correction. 100% tested for stability, compatibility and performance. Samsung original chip [See More]

• Supply Voltage: 1.2V; 1.2 V
• Operating Temperature: 32 to 185

• Capacity: 16000

16GB. Speed 3200MHz. 30u" Gold Plating Thickness. Anti-sulfurization resistance. ECC [See More]

• Supply Voltage: 1.2V; 1.2 V
• Operating Temperature: 32 to 185

• Capacity: 16000

16GB. Speed 3200MHz. 30u" Gold Plating Thickness. Anti-sulfurization resistance. Rigister [See More]

• Supply Voltage: 1.2V; 1.2 V
• Operating Temperature: 32 to 185

• Capacity: 16000

16GB. Speed 3200MHz. 30u" Gold Plating Thickness. Anti-sulfurization resistance. Unbuffered [See More]

• Supply Voltage: 1.2V; 1.2 V
• Operating Temperature: 32 to 185

• Capacity: 16000