Semiconductor Wafers Ion Milling Systems

4 Results
IG20 5 KeV Argon or Oxygen Ion Source for UHV Surface Analysis -- IG20
from Hiden Analytical

Static and Dynamic SIMSAuger Electron SpectroscopyIon Beam SputteringSurface Science StudiesRastering / Depth Profiling [See More]

  • Applications: Wafer; CVD / PVD
  • Mounting / Loading: In-process, in-situ or system mounted
  • Measurements: Defects, dimples or film residues; Area mapping (optional feature); DepthProfiling
Desktop Scanning Electron Microscope -- Phenom Pro
from Phenom-World BV

The Phenom Pro desktop SEM is one of the most advanced imaging models in the Phenom series. With its long-life high-brightness CeB6 electron source, the Phenom Pro creates state-of-the-art images with a minimum of user maintenance intervention. The backscattered-electron detector (BSED) and... [See More]

  • Applications: Wafer; CVD / PVD; Packaged IC or substrate
  • Mounting / Loading: Manual loading
  • Measurements: Composition; Defects, dimples or film residues; Critical dimensions or Trench geometry; Particle contamination; Area mapping
IG5C 5KeV Caesium Ion Source for UHV Surface Analysis -- IG5C
from Hiden Analytical

Low power, high brightness, surface ionisation source coupled to a compact ion column, providing high performance in a small package. [See More]

  • Applications: Wafer; CVD / PVD
  • Mounting / Loading: In-process, in-situ or system mounted
  • Measurements: Defects, dimples or film residues; Area mapping (optional feature); DepthProfiling
Desktop Scanning Electron Microscope -- Phenom ProX
from Phenom-World BV

The Phenom ProX desktop scanning electron microscope is the ultimate all-in-one imaging and X-ray analysis system. With the Phenom ProX desktop SEM, sample structures can be physically examined and their elemental composition determined. Viewing three-dimensional images of microscopic structures... [See More]

  • Applications: Wafer; CVD / PVD; Packaged IC or substrate
  • Mounting / Loading: Manual loading
  • Measurements: Composition; Defects, dimples or film residues; Critical dimensions or Trench geometry; Particle contamination; Area mapping