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Supplier: Renesas Electronics Corporation
Description: The ISL90842 integrates four digitally controlled potentiometers (DCP) configured as variable resistors on a monolithic CMOS integrated circuit.brbr The digitally controlled potentiometers are implemented with a combination of resistor elements and CMOS switches.
- Current Rating: 5.00E-6 amps
- No. of Tap Positions: 256 #
- Operating Temperature: 85 C
- Resistance Taper: Linear
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Supplier: Renesas Electronics Corporation
Description: The ISL90841 integrates four digitally controlled potentiometers (XDCP) on a monolithic CMOS integrated circuit.brbr The digitally controlled potentiometers are implemented with a combination of resistor elements and CMOS switches. The position of the wipers are controlled by
- Current Rating: 5.00E-6 amps
- No. of Tap Positions: 256 #
- Operating Temperature: 85 C
- Resistance Taper: Linear
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Supplier: Renesas Electronics Corporation
Description: The ISL22346 integrates four digitally controlled potentiometers (DCP) and non-volatile memory on a monolithic CMOS integrated circuit.brbr The digitally controlled potentiometers are implemented with a combination of resistor elements and CMOS switches. The position of the
- Current Rating: 5.00E-6 amps
- No. of Tap Positions: 128 #
- Operating Temperature: 125 C
- Resistance Taper: Linear
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Supplier: Renesas Electronics Corporation
Description: The ISL95810 integrates a digitally controlled potentiometer (XDCP) on a monolithic CMOS integrated circuit.brbr The digitally controlled potentiometer is implemented with a combination of resistor elements and CMOS switches. The position of the wiper is controlled by the user
- Current Rating: 5.00E-6 amps
- No. of Tap Positions: 256 #
- Operating Temperature: 85 C
- Resistance Taper: Linear
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A Fully Differential VCO Cell with Active Inductors for Gbps Serial Links
Section 3 investigates the characteristics of self-biased active inductors, CMOS variable resistors , and CMOS symmetrical load.
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Towards Analog Memristive Controllers
Since the synthesis of memristor is still an engineering challenge, mimicing the functionality of memristor using variable CMOS resistor like that proposed in [18] will also prove to be a valuable research.
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NMOS/PMOS resistance calibration method using reference frequency
Variation of CMOS resistor due to PVT variations can reach about ±50%.
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CMOS Continuous-Time Adaptive Equalizers for High-Speed Serial Links
The simplest implementation of a variable resistor in CMOS technology is a transistor biased in triode region.
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CMOS Receiver Front-ends for Gigabit Short-Range Optical Communications
The typical implementation of a variable resistor in CMOS technology is a transistor biased in triode region.
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1‐V continuous‐time equalizers for multi‐gigabit short‐haul optical fiber communications
The simplest implementation of a variable resistor in CMOS technology is a transistor biased in triode region.
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PVT variation detection and compensation methods for high-speed systems
Variation of CMOS resistor due to .
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A Reconfigurable Low-Noise Amplifier Using a Tunable Active Inductor for Multistandard Receivers
The simulation results show a reconfigurable frequency from 0.8 to 2.5 GHz, and tuning of the frequency band is achieved by using a CMOS voltage controlled variable resistor .
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Self-Calibration of Output Match and Reverse Isolation in LNAs Based Switchable Resistor
Fig. 12 Architecture of CMOS LNA with variable resistor Rref .
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The effects of on-chip and package decoupling capacitors and an efficient ASIC decoupling methodology
In contrast, CMOS devices are variable resistors that can only dissipate energy and shunt energy from one portion of a systemto another.