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Supplier: Phenom-World BV
Description: The Phenom Pure desktop SEM (scanning electron microscope) is an ideal tool for making the transition from working with a light microscope to operating an electron microscope. The Phenom Pure is equipped with the basic fundamentals for meeting imaging needs.
- Applications: Semiconductor Wafers, CVD / PVD Films, Packaged ICs / Ceramic Substrates
- Area Mapping: Yes
- FIB / Ion Mill: Yes
- Form Factor: Monitor / Instrument
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Supplier: Phenom-World BV
Description: The Phenom ProX desktop scanning electron microscope is the ultimate all-in-one imaging and X-ray analysis system. With the Phenom ProX desktop SEM, sample structures can be physically examined and their elemental composition determined. Viewing three-dimensional images
- Applications: Semiconductor Wafers, CVD / PVD Films, Packaged ICs / Ceramic Substrates
- Area Mapping: Yes
- FIB / Ion Mill: Yes
- Form Factor: Monitor / Instrument
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Supplier: Phenom-World BV
Description: The Phenom Pro desktop SEM is one of the most advanced imaging models in the Phenom series. With its long-life high-brightness CeB6 electron source, the Phenom Pro creates state-of-the-art images with a minimum of user maintenance intervention. The backscattered-electr on detector (BSED
- Applications: Semiconductor Wafers, CVD / PVD Films, Packaged ICs / Ceramic Substrates
- Area Mapping: Yes
- FIB / Ion Mill: Yes
- Form Factor: Monitor / Instrument
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Description: ISO 16700:2004 specifies a method for calibrating the magnification of images generated by a scanning electron microscope (SEM) using an appropriate reference material. This method is limited to magnifications determined by the available size range of structures in the
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Supplier: CSA Group
Description: ISO 16700:2016 specifies a method for calibrating the magnification of images generated by a scanning electron microscope (SEM) using an appropriate reference material. This method is limited to magnifications determined by the available size range of structures in the
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Description: . ISO 29301:2010 also refers to the calibration of a scale bar. ISO 29301:2010 does not apply to the dedicated critical dimension measurement TEM (CD-TEM) and the scanning transmission electron microscope (STEM)
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Supplier: CSA Group
Description: . This document also refers to the calibration of a scale bar. This document does not apply to the dedicated critical dimension measurement TEM (CD-TEM) and the scanning transmission electron microscope (STEM).
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Shot noise in electron‐beam lithography and line‐width measurements
The line width is usually measured in an adapted critical dimension scanning electron microscope (CD‐SEM).
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M onte C arlo Simulation of CD ‐ SEM Images for Linewidth and Critical Dimension Metrology
Summary In semiconductor industry, strict critical dimension control by using a critical dimension scanning electron microscope (CD‐SEM) is an extremely urgent task in near‐term years.
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Device-correlated metrology for overlay measurements
In order to systematically quantify the bias components between target and device, we introduce a new hybrid target integrating an optical OVL target with a device mimicking critical dimension scanning electron microscope (CD-SEM) target.
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In-line E-beam wafer metrology and defect inspection: the end of an era for image-based critical dimensional metrology? New life for defect inspection
The Critical Dimension Scanning Electron Microscope (CDSEM) is an E-beam tool responsible for image-based structural metrology measurements while the E-beam review (EBR) and E-beam inspection (EBI) tools are responsible for defect inspection.
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Exact and reliable overlay metrology in nanoscale semiconductor devices using an image processing method
S. Hotta et al., “ Critical dimension scanning electron microscope local overlay measurement and its application for double patterning of com- plex shapes,” J. Micro/Nanolith.
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Time-dependent electron-beam-induced photoresist shrinkage effects
B. Bunday et al., “Unified advanced critical dimension scanning elec- tron microscope (CD-SEM) specification for sub-65 nm technology (2010 version).” .
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Improving the performance of the critical dimension-scanning electron microscope with the contrast transfer function
Critical dimension scanning electron microscopes (CD-SEMs) are used extensively by the semiconductor industry to perform highly accurate dimensional metrology of patterned features.
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Simulation study of repeatability and bias in the CD-SEM
The ability of a critical dimension scanning electron microscope (CD-SEM) to resolve differences in the widths of two lines is determined by measurement repeatability and any sample-dependent biases.
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Influence of electron incident angle distribution on CD-SEM linewidth measurements
J. S. Villarrubia, A. E. Vladár, and M. T. Postek, “Simulation study of repeatability and bias in the critical dimension scanning electron microscope ,” Journal of Microlithography, Microfabrication, and Microsystems, Vol. 4(3), pp. 033002-1-10, 2005.
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Small feature accuracy challenge for CD-SEM metrology physical model solution
Unified Advanced Critical Dimension Scanning Electron Microscope (CD-SEM) Specification for sub-90 nm Technology (2005 Version).” .