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Supplier: Richardson RFPD
Description: fabricated in Analog Devices' Linear Compatible CMOWS (LC2MOS) process, a mixed technology process that combines precision bipolar circuits with low-power CMOS logic. The part is available in a 28-pin, 0.6"" wide, plastic or hermetic dual-in-line package (DIP), in a 28-terminal leadless
- IC Package Type: DIP
- Resolution: 12 bits
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Supplier: Richardson RFPD
Description: . The AD573S guarantees ±1 LSB relative accuracy and no missing codes from -55°C to +125°C.Three package configurations are offered. All versions are offered in a 20-pin hermetically sealed ceramic DIP. The AD573J and AD573K are also available in a 20-pin plastic DIP or 20-pin leaded
- IC Package Type: DIP
- Resolution: 10 bits
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Supplier: Richardson RFPD
Description: signal-to-noise ratio. The parts are available in a 24-pin, 0.3 inch-wide, plastic or hermetic dual-in-line package (DIP). The AD7870 and AD7875 are available in a 28-pin plastic leaded chip carrier (PLCC), while the AD7876 is available and in a 24-pin small outline (SOIC)
- IC Package Type: DIP
- Resolution: 12 bits
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Supplier: Richardson RFPD
Description: signal-to-noise ratio. The parts are available in a 24-pin, 0.3 inch-wide, plastic or hermeticdual-in-line package (DIP). The AD7870 and AD7875 are available in a 28-pin plastic leaded chip carrier (PLCC), while the AD7876 is available and in a 24-pin small outline (SOIC)
- IC Package Type: DIP
- Resolution: 12 bits
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Supplier: DigiKey
Description: "Connector Chip Carrier For 0.4"" DIP Sockets"
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Supplier: Microchip Technology, Inc.
Description: , Plastic J-leaded Chip Carrier (PLCC) 32-lead, Plastic Thin Small Outline Package (TSOP) Available in dual marked (5962-382670xxx) CERAMIC Hermetic Packaging 32-Lead, 0.600" Wide, Non-Windowed, Ceramic Dual Inline (Cerdip) 32-Lead, Non-Windowed, Ceramic Bottom-Brazed Flat Package
- Access Time: 120 to 150 ns
- Data Rate: 120 MHz
- Data Retention: 10 years
- Density: 1000 kbits
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Supplier: Microchip Technology, Inc.
Description: µs/byte (typical) CMOS and TTL compatible inputs and outputs Integrated product identification code Industrial Temperature Range: -40°C to 85°C Available in Green (Pb/Halide-free) Packaging Only 32-lead, Plastic J-leaded Chip Carrier (PLCC) 28-lead, 0.600" wide, plastic, dual inline
- Access Time: 45 to 70 ns
- Data Retention: 20 years
- Density: 512 kbits
- IC Package Type: DIP, Other
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Supplier: Microchip Technology, Inc.
Description: A latchup immunity Rapid programming algorithm – 50 µs/word (typical) CMOS and TTL compatible inputs and outputs Integrated product identification code Industrial Temperature Range: -40°C to 85°C Available in Green (Pb/Halide-free) Packaging Only 44-lead, Plastic J-leaded Chip Carrier
- Access Time: 55 to 90 ns
- Data Retention: 20 years
- Density: 2000 kbits
- IC Package Type: DIP, Other
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Supplier: Microchip Technology, Inc.
Description: – 50µs/byte (typical) CMOS and TTL compatible inputs and outputs Integrated product identification code Industrial Temperature Range: -40°C to 85°C Available in Green (Pb/Halide-free) Packaging Only 32-lead, Plastic J-leaded Chip Carrier (PLCC) 32-lead, 0.600" wide, plastic, dual
- Access Time: 90 ns
- Data Retention: 20 years
- Density: 8000 kbits
- IC Package Type: DIP, Other
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Supplier: RS Components, Ltd.
Description: The XBee ZB ZigBee RF module operates in the 2.4GHz ISM Band and allows the formation of a mesh network. With its high receiver sensitivity it can provide line-of-sight communication for up to 120m. Carrier frequency: 2.4GHz ISM band with 16 channels. RF Power Output: +3dBm (Boost mode
- Interface: Other
- Supply Voltage: 2.5 V, 2.7 V, 3 V, 3.3 V, 3.6V, Other
- TJ: -40 to 85 C
- Technology: ZigBee®
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Supplier: RS Components, Ltd.
Description: The XBee-PRO ZB ZigBee RF module operates in the 2.4GHz ISM Band and allows the formation of a mesh network. With its high receiver sensitivity it can provide line-of-sight communication for up to 750m. Carrier frequency: 2.4GHz ISM band with 14 channels. RF Power Output: +10dBm. Receiver
- Interface: USB, Other
- Supply Voltage: 3 V, 3.3 V, Other
- TJ: -40 to 85 C
- Technology: ZigBee®
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Supplier: RS Components, Ltd.
Description: The XBee-PRO ZigBee RF module operates in the 2.4GHz ISM Band and allows the formation of a mesh network. With its high power output and high receiver sensitivity it can provide long-range line-of-sight communication for up to 2 miles. Carrier frequency: 2.4GHz ISM band with 15 channels. RF
- Interface: I2C, Other
- Supply Voltage: 2.7 V, 3 V, 3.3 V, 3.6V, Other
- TJ: -40 to 85 C
- Technology: ZigBee®
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Supplier: RS Components, Ltd.
Description: The XBee-PRO ZigBee RF module operates in the 2.4GHz ISM Band and allows the formation of a mesh network. With its high power output and high receiver sensitivity it can provide long-range line-of-sight communication for up to 2 miles. Carrier frequency: 2.4GHz ISM band with 15 channels. RF
- Interface: I2C, Other
- Supply Voltage: 2.7 V, 3 V, 3.3 V, 3.6V, Other
- TJ: -40 to 85 C
- Technology: ZigBee®
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Supplier: Broadcom Inc.
Description: The HCPL-6631 is a high reliability Class H two channel hermetically sealed optocoupler in a 20 Pad Leadless Ceramic Chip Carrier package with solder dipped pads. The solder contains lead. The product is capable of operation and storage over the full military temperature range
- Collector Emitter Breakdown Voltage: 5 volts
- Isolation Voltage: 1500 volts
- Mounting Option: Surface Mount
- Operating Temperature: -55 to 125 C
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Supplier: Broadcom Inc.
Description: The DSCC SMD 81028032A is a high reliability Class H two channel hermetically sealed optocoupler in a 20 Pad Leadless Ceramic Chip Carrier package with solder dipped pads. The solder contains lead. The product is capable of operation and storage over the full military
- Collector Emitter Breakdown Voltage: 5 volts
- Isolation Voltage: 1500 volts
- Mounting Option: Surface Mount
- Operating Temperature: -55 to 125 C
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Supplier: Broadcom Inc.
Description: The HCPL-663K is a two channel hermetically sealed optocoupler in a 20 Pad Leadless Ceramic Chip Carrier package with solder dipped pads and the highest level of reliability, Class K. The solder contains lead. The product is capable of operation and storage over the full
- Collector Emitter Breakdown Voltage: 5 volts
- Isolation Voltage: 1500 volts
- Mounting Option: Surface Mount
- Operating Temperature: -55 to 125 C
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Supplier: Broadcom Inc.
Description: family is also available. Package styles for this die set in one, two, or four channels are 8 and 16-Pin DIP through hole, 16-Pin surface mount DIP flat pack, and 20 pad Leadless Ceramic Chip Carrier. Most devices may be purchased with a variety of lead forms and plating
- Collector Emitter Breakdown Voltage: 5 volts
- Isolation Voltage: 1500 volts
- Mounting Option: Through Hole (Plug-in)
- Operating Temperature: -55 to 125 C
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http://repositories.lib.utexas.edu/bitstream/handle/2152/ETD-UT-2011-05-3231/MONTI-DISSERTATION.pdf?sequence=1
Figure 6.4: This picture shows the resistivity probe, that is connected to the side brazed DIP chip carrier , that has a wire-bonded sample attached to it.
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Thiol passivation of MWIR type II superlattice photodetectors
For the electrical and optical measurements, samples were bonded to a 40 pin DIP chip carrier (figure 1c).
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Optical microsensor for continuous glucose measurements in interstitial fluid
Linear variable filter and detector array subassembly on a 40-pin DIP chip carrier .
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http://dspace.mit.edu/bitstream/handle/1721.1/39737/181375270-MIT.pdf?sequence=2
After being wired to a DIP chip carrier , QD solids are drop cast from 9:1 hexane:octane, filling the 100-nm deep channel between electrodes with glassy QD solid.
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http://dspace.mit.edu/bitstream/handle/1721.1/28653/58965956-MIT.pdf?sequence=2
The samples are mounted onto ceramic 24 pin dual in-line ( DIP ) chip carriers with silver epoxy.
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Monolithic InGaAs-on-silicon shortwave infrared detector arrays
It can be packaged in a 24 pin DIP chip carrier , or a 68 pin LCC chip carrier.
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Fabrication and characterization of an SOI-based thermally tuned phase modulator
By packaging the device on a basic dual inline package ( DIP ) chip carrier , and using the existing bond pads, a much more stable platform could be realized for test and characterisation.
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Fabrication and characterization of a thermo-mechanically tunable grating-assisted suspended waveguide filter
A standard DIP chip carrier is used to hold the die.
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Magnetic Tunnel Junction (MTJ) sensors for integrated circuits (IC) electric current measurement
The fabricated devices were cut into 8.2 mm × 8.2 mm chips and then wire-bonded and encapsulated into 40- DIP chip carriers , for characterization.
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Incorporation of Novel MEMS Tactile Sensors into Tissue Engineered Skin
For connection to an electrical measurement system, the fabricated sensors (figure 2) were mounted onto standard DIP chip carriers (figure 3) and wire bonded (using 25 µm aluminium wires).