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Supplier: Clairex Technologies, Inc.
Description: Photodiodes
- Sensitivity: 0.5 A/W
- Active Area Diameter or Length: 1.0159994513602963 mm
- Active Area Height: 1.0159994513602963 mm
- Dark Current: 1 nA
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Supplier: Beijing Grish Hitech Co., Ltd.
Description: GRISH has corresponding polishing processes and consumables for compound semiconductors, including SiC(silicon carbide), AlN(aluminum nitride), GaN(gallium nitride), GaAs(gallium arsenide), InP(indium phosphide), etc.
- Grit Size: 200 to 500
- Type: Polishing
- Materials / Substrates Finished: Semiconductors / Electronics (Wafers)
- Form: Slurry
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Supplier: Advanced Abrasives Corp.
Description: Premalox WCA - A White Calcined Alumina with 99.6% Purity Premalox WCA Aluminum Oxide Powder undergoes stringent grading and inspection techniques to assure uniform size and quality of particles, which in turn prevents random scratching or damage to the work piece. It is an aluminum
- Material Type: Alumina / Aluminum Oxide
- Applications: Optics / Optical Grade
- Features: Other
- Shape / Form: Powder / Aggregate (Grain / Grog)
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Supplier: Allied Electronics, Inc.
Description: The Super Bright Red source color devices are made with Gallium Aluminum Arsenide Red Light Emitting. SUITABLE FOR ALL SMT ASSEMBLY AND SOLDER PROCESS. AVAILABLE ON TAPE AND REEL. IDEAL FOR BACKLIGHTING.
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Supplier: Allied Electronics, Inc.
Description: The Super Bright Red source color devices are made with Gallium Aluminum Arsenide Red Light Emitting Diode. Suitable for all SMT assembly and solder process. Available on tape and reel. Ideal for backlighting.
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Supplier: Advanced Abrasives Corp.
Description: Sapphire, Silicon, Germanium, Gallium Arsenide, Cadmium Zinc Telluride, Piezo Electric crystals and metallographic specimen preparation.
- Compound / Abrasive Type: Aluminum Oxide, Ceramic
- Materials / Substrates Finished: Ceramics / Glass, Ophthalmic / Optical Materials
- Type: Lapping, Polishing
- Form: Liquid / Dispersion
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Supplier: Advanced Abrasives Corp.
Description: (gamma), 0.1 µm (alpha/gamma), 0.3 µm (alpha), and 1.0 µm (alpha) Applications: Lapping and polishing of Ceramics, glass, precision optics, Quartz, Sapphire, Silicon, Germanium, Gallium Arsenide, Cadmium Telluride, Piezo Electric crystals and metallographic specimen preparation.
- Material Type: Alumina / Aluminum Oxide
- Applications: Optics / Optical Grade
- Features: Other
- Shape / Form: Powder / Aggregate (Grain / Grog)
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Supplier: Micropac Industries, Inc.
Description: A Gallium Aluminum Arsenide (GaAlAs) infrared LED and a high gain N-P-N silicon phototransistor packaged in a hermetically sealed metal case. The 4N22, 4N23 and 4N24’s can be tested to customer specifications. Features: • Qualified to MIL-PRF-19500/486 • Collector in electrical
- Isolation Voltage: 1,000 volts
- Rise Time: 15 µs
- Collector Emitter Breakdown Voltage: 40 volts
- Operating Temperature: -55 to 125 C
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Supplier: Richardson RFPD
Description: M/A-COM Technology Solutions MADP-000907-14020 is a solderable, flip-chip Aluminum Gallium Arsenide (AlGaAs) PIN diode. It is fabricated with MOCVD grown epitaxy using a process and design that optimizes device to device uniformity and produces extremely low parasitics. The
- VR: 45 volts
- Operating Frequency: 100 to 30,000 MHz
- CT: 0.025 pF
- Features: Other, RF Diodes
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Supplier: Skyworks Solutions, Inc.
Description: The OLH5600/5601 are hermetic 8-pin dual in-line package (DIP) optocouplers for high-speed digital applications. The OLH5601 product is a 100 percent high-reliability screened version of the OLH5600. Each unit consists of an Aluminum Gallium Arsenide (AlGaAs) LED optically
- Isolation Voltage: 3,000 volts
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Supplier: Skyworks Solutions, Inc.
Description: The OLH5630/5631 are dual-channel, hermetic 8-pin dual in-line package (DIP) optocouplers for high-speed digital applications. The OLH5631 product is a 100 percent high-reliability screened version of the OLH5630. Each channel consists of an Aluminum Gallium Arsenide (AlGaAs)
- Isolation Voltage: 3,000 volts
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Supplier: Skyworks Solutions, Inc.
Description: The OLH5730/5731 are dual-channel, hermetic 8-pin dual in-line package (DIP) optocouplers for low input current applications. The OLH5731 product is a 100 percent high-reliability screened version of the OLH5730. Each channel consists of an Aluminum Gallium Arsenide (AlGaAs) LED
- Isolation Voltage: 3,000 volts
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Supplier: Skyworks Solutions, Inc.
Description: base station applications operating in the 800–900 MHz bandwidth. All active circuitry in the module is contained in a single Gallium Arsenide (GaAs) Microwave Monolithic Integrated Circuit (MMIC). The device is manufactured with Skyworks Aluminum (Al) GaAs Heterojunction
- Frequency Range: 800 to 900 MHz
- Minimum Gain: 30 dB
- Maximum Gain: 30 dB
- Output Power( P1dB): 24.5 dBm
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Supplier: Broadcom Inc.
Description: subminiature lamp packages. For more information refer to Standard SMT and Through Hole Lead Bend Options for Subminiature LED Lamps data sheet. Technology These subminiature solid state lamps utilize a highly optimized LED material technology, transparent substrate aluminum gallium
- Peak Wavelength: 654 nm
- Forward Voltage: 1.9 volts
- Forward Current: 30 milliamps
- Luminous Intensity: 130 milliCandela
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Supplier: Richardson RFPD
Description: MACOM's MA4AGSW1A is an Aluminum-Gallium Arsenide anode enhanced, SPST Non-Reflective PIN diode switch. AlGaAs anodes, which utilize MACOM's patent pending hetero-junction technology, produce less loss than conventional GaAs processes, by as much as a 0.3 dB reduction in
- Frequency Range: 50 to 70,000 MHz
- Insertion Loss: 1 dB
- Isolation (Port to Port): 46 dB
- Switching Speed: 0.00001 ms
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Description: attachment of aluminum oxide and gallium-arsenide electronic circuitry. Titanium provides 300% more stiffness than aluminum and can be hermetic with walls as thin as .010″. This means an existing aluminum package can be redesigned to be stiffer, lighter, more
- Features: Other
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Photocathodes
Experience with gallium aluminum arsenide , which has produced the best results thus far, shows that blow 50% aluminum content, the oxidation rate is dramatically suppressed.
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Two-dimensional electron gas in heterojunction
A wide-gap semiconductor, gallium aluminum arsenide , is selectively doped.
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Nanotechnology Applications to Telecommunications and Networking
These growth mechanisms are based on top-down methods on top of bulk semiconductor wafers5 (e.g., gallium aluminum arsenide may be grown on a gallium arsenide substrate).
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Radiation Effects On Gallium Arsenide Integrated Optical Devices
Here, we discuss gallium arsenide (and gallium aluminum arsenide ) integrated optical devices for streak camera - based, high speed diagnostic systems, and focus on the radiation hardness of these devices.
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Radiation Effects On Solar Cells
The two generic solar cells of greatest importance are the silicon and the gallium aluminum arsenide cell.
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Optical Fiber Devices For Signal Processing
Gallium aluminum arsenide lasers which operate continuously at room temperature aq7 emit in a single longi- tudinal and single transverse mode have recently been developed.
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Gallium Arsenide Integrated Optical Devices In Adverse Environments
Fortunately, the band gap edge can be shifted slightly by using gallium aluminum arsenide , instead of gallium arsenide as the waveguide material.
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Advances in etching of semiconductor devices
The compounds gallium arsenide and gallium aluminium arsenide have the same type of crystallographic structure and the same lattice constant.
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Effect of Low-Level Laser Therapy on Human Adipose-Derived Stem Cells: In Vitro and In Vivo Studies
The total surface of the plate was irradiated for 15 min with 830 nm Ga–Al–As ( gallium aluminum arsenide ) laser (Headlite II LED; Lutronic Co., Goyang, Korea), which was designed for our study (Fig. 1).
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Fundamentals and applications of light-emitting diodes (LEDs) in in vitro plant growth and morphogenesis
The new generation LED is based on a gallium aluminum arsenide (GaAlAS) semiconductor material fabricated as a double hetero-structure on a transparent substrate, and has become a promising light source in experiments on in vitro plant growth and morphogenesis.