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Supplier: Clairex Technologies, Inc.
Description: Photodiodes
- Active Area Diameter or Length: 1.02 mm
- Active Area Height: 1.02 mm
- Dark Current: 1 nA
- Photodiode Material: Other
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Supplier: Advanced Abrasives Corp.
Description: starting point. Available in a number of abrasive sizes ranging from 1 µm to 50 µm. Applications include: Lapping and polishing of glass, precision optics, Quartz, Sapphire, Gallium Arsenide, Cadmium Telluride, and Piezo electric crystals.
- Aluminum Oxide / Aluminate Type: Alumina / Aluminum Oxide
- Applications: Other, Optics / Optical Grade
- Shape / Form: Powder / Aggregate (Grain / Grog)
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Supplier: Advanced Abrasives Corp.
Description: abrasive particle sizes 0.05 µm (gamma), 0.1 µm (alpha/gamma), 0.3 µm (alpha), and 1.0 µm (alpha) Applications: Lapping and polishing of Ceramics, glass, precision optics, Quartz, Sapphire, Silicon, Germanium, Gallium Arsenide, Cadmium Telluride, Piezo Electric crystals and
- Aluminum Oxide / Aluminate Type: Alumina / Aluminum Oxide
- Applications: Other, Optics / Optical Grade
- Shape / Form: Powder / Aggregate (Grain / Grog)
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Supplier: Advanced Abrasives Corp.
Description: Lapping and polishing of Ceramics, glass, precision optics, Quartz, Sapphire, Silicon, Germanium, Gallium Arsenide, Cadmium Zinc Telluride, Piezo Electric crystals and metallographic specimen preparation.
- Abrasive Grain Type: Aluminum Oxide, Ceramic
- Form: Liquid / Dispersion, Other
- Grading / Grit System: Micron Graded
- Products / Materials Finished: Ceramics / Glass, Ophthalmic / Optical Materials, Specialty / Other
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Supplier: Richardson RFPD
Description: M/A-COM Technology Solutions MADP-000907-14020 is a solderable, flip-chip Aluminum Gallium Arsenide (AlGaAs) PIN diode. It is fabricated with MOCVD grown epitaxy using a process and design that optimizes device to device uniformity and produces extremely low parasitics. The
- Diode Type: PIN Diodes, RF Diodes
- VR: 45 volts
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Supplier: Skyworks Solutions, Inc.
Description: The OLH5630/5631 are dual-channel, hermetic 8-pin dual in-line package (DIP) optocouplers for high-speed digital applications. The OLH5631 product is a 100 percent high-reliability screened version of the OLH5630. Each channel consists of an Aluminum Gallium Arsenide (AlGaAs)
- Isolation Voltage: 3000 volts
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Supplier: Skyworks Solutions, Inc.
Description: The OLH5600/5601 are hermetic 8-pin dual in-line package (DIP) optocouplers for high-speed digital applications. The OLH5601 product is a 100 percent high-reliability screened version of the OLH5600. Each unit consists of an Aluminum Gallium Arsenide (AlGaAs) LED optically
- Isolation Voltage: 3000 volts
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Supplier: Micropac Industries, Inc.
Description: A Gallium Aluminum Arsenide (GaAlAs) infrared LED and a high gain N-P-N silicon phototransistor packaged in a hermetically sealed metal case. The 4N22, 4N23 and 4N24’s can be tested to customer specifications. Features: • Qualified to MIL-PRF-19500/486 • Collector
- Collector Emitter Breakdown Voltage: 40 volts
- Isolation Voltage: 1000 volts
- Mounting Option: Through Hole (Plug-in)
- Operating Temperature: -55 to 125 C
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Supplier: Micropac Industries, Inc.
Description: Gallium Aluminum Arsenide (GaAlAs) infrared LED and a high gain N-P-N silicon phototransistor packaged in a hermetically sealed TO-5 metal can. The 4N47A, 4N48A and 4N49A’s can be tested to customer specifications, as well as to MIL-PRF-19500 JAN, JANTX, JANTXV and JANS quality
- Collector Emitter Breakdown Voltage: 40 volts
- Isolation Voltage: 1000 volts
- Mounting Option: Through Hole (Plug-in)
- Operating Temperature: -55 to 125 C
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Supplier: Micropac Industries, Inc.
Description: A Gallium Aluminum Arsenide (GaAlAs) infrared LED and a high gain N-P-N silicon phototransistor packaged in a hermetically sealed metal case. The 4N22, 4N23 and 4N24’s can be tested to customer specifications. Features: • Qualified to MIL-PRF-19500
- Collector Emitter Breakdown Voltage: 40 volts
- Isolation Voltage: 1000 volts
- Mounting Option: Through Hole (Plug-in)
- Operating Temperature: -55 to 125 C
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Supplier: Micropac Industries, Inc.
Description: A Gallium Aluminum Arsenide (GaAlAs) infrared LED and a high gain N-P-N silicon phototransistor packaged in a hermetically sealed metal case. The 4N22, 4N23 and 4N24’s can be tested to customer specifications. Features: • Qualified to MIL-PRF-19500
- Collector Emitter Breakdown Voltage: 40 volts
- Isolation Voltage: 1000 volts
- Mounting Option: Through Hole (Plug-in)
- Operating Temperature: -55 to 125 C
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Supplier: Broadcom Inc.
Description: epoxy subminiature lamp packages. For more information refer to Standard SMT and Through Hole Lead Bend Options for Subminiature LED Lamps data sheet. Technology These subminiature solid state lamps utilize a highly optimized LED material technology, transparent substrate aluminum
- Forward Current: 30 milliamps
- Forward Voltage: 1.9 volts
- Lens Type: Domed Lens
- Luminous Intensity: 100 milliCandela
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Supplier: Broadcom Inc.
Description: aluminum gallium arsenide (TS AlGaAs). This LED technology has a very high luminous efficiency, capable of producing high light output over a wide range of drive currents (500 mA to 50 mA). The color is deep red at a dominant wavelength of 644 nm deep red. TS AlGaAs is a
- Color: Red
- Forward Current: 30 milliamps
- Forward Voltage: 1.9 volts
- Lens Type: Domed Lens
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Supplier: Broadcom Inc.
Description: aluminum gallium arsenide (TS AlGaAs). This LED technology has a very high luminous efficiency, capable of producing high light output over a wide range of drive currents (500 mA to 50 mA). The color is deep red at a dominant wavelength of 644 nm deep red. TS AlGaAs is a
- Color: Red
- Forward Current: 30 milliamps
- Forward Voltage: 1.9 volts
- Lens Type: Domed Lens
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Supplier: Broadcom Inc.
Description: epoxy subminiature lamp packages. For more information refer to Standard SMT and Through Hole Lead Bend Options for Subminiature LED Lamps data sheet. Technology These subminiature solid state lamps utilize a highly optimized LED material technology, transparent substrate aluminum
- Color: Red
- Forward Current: 30 milliamps
- Forward Voltage: 1.6 volts
- Lens Type: Domed Lens
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Supplier: Skyworks Solutions, Inc.
Description: The OLH5730/5731 are dual-channel, hermetic 8-pin dual in-line package (DIP) optocouplers for low input current applications. The OLH5731 product is a 100 percent high-reliability screened version of the OLH5730. Each channel consists of an Aluminum Gallium Arsenide (AlGaAs) LED
- Isolation Voltage: 3000 volts
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Supplier: Skyworks Solutions, Inc.
Description: The OLH5700/5701 are hermetic 8-pin dual in-line package (DIP) optocouplers for low input current applications. The OLH5701 product is a 100 percent high-reliability screened version of the OLH5700. Each unit consists of an Aluminum Gallium Arsenide (AlGaAs) LED optically
- Isolation Voltage: 3000 volts
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Supplier: Richardson RFPD
Description: Single Diode Configuration: MACOM's MA4AGP907 and MA4AGFCP910 are Aluminum Gallium Arsenide (AlGaAs) flip-chip PIN diode. The device is fabricated on OMCVD epitaxial wafers using a process designed for high device uniformity and extremely low parasitics. The diodes exhibit an
- Diode Type: PIN Diodes, RF Diodes
- VR: 75 volts
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Supplier: Richardson RFPD
Description: Single Diode Configuration: MA4AGP907 and MA4AGFCP910 are Aluminum Gallium Arsenide (AlGaAs) flip-chip PIN diodes. These devices are fabricated on OMCVD epitaxial wafers using a process designed for high device uniformity and extremely low parasitics. The diodes exhibit an
- Diode Type: PIN Diodes, RF Diodes
- VR: 50 volts
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Supplier: Richardson RFPD
Description: Single Diode Configuration: MA4AGBLP912 is an Aluminum-Gallium- Arsenide anode enhanced, beam lead PIN diode. AlGaAs anodes, which utilize MACOM's patent pending hetero-junction technology, produce less diode On resistance than conventional GaAs devices. These devices are fabricated on
- Diode Type: PIN Diodes, RF Diodes
- VR: 50 volts
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Supplier: RS Components, Ltd.
Description: light output due to a borderless package design. HLMP-R100. The HLMP-R100 uses a double heterojunction (DH) absorbing substrate (AS) aluminum gallium arsenide (AlGaAs) red LED chip in a light red epoxy package. Together they produce a strong light output over a wide range of
- Color: Red, Other
- Forward Voltage: 1.9 volts
- Luminous Intensity: 2.1 milliCandela
- Peak Wavelength: 626 nm
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Supplier: RS Components, Ltd.
Description: panel indicators. Their contrast and uniform light is helped by a specific epoxy diffusion and tinting process. The HLMP-S100 uses double heterojunction (DH) absorbing substrate (AS) aluminum gallium arsenide (AlGaAs) LEDs to produce outstanding light output over a wide range of
- Color: Red, Other
- Forward Voltage: 1.8 volts
- Luminous Intensity: 7.5 milliCandela
- Peak Wavelength: 637 nm
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Supplier: RS Components, Ltd.
Description: light output due to a borderless package design. HLMP-R100. The HLMP-R100 uses a double heterojunction (DH) absorbing substrate (AS) aluminum gallium arsenide (AlGaAs) red LED chip in a light red epoxy package. Together they produce a strong light output over a wide range of
- Color: Red, Other
- Forward Voltage: 1.9 volts
- Luminous Intensity: 2.1 milliCandela
- Peak Wavelength: 626 nm
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Supplier: RS Components, Ltd.
Description: panel indicators. Their contrast and uniform light is helped by a specific epoxy diffusion and tinting process. The HLMP-S100 uses double heterojunction (DH) absorbing substrate (AS) aluminum gallium arsenide (AlGaAs) LEDs to produce outstanding light output over a wide range of
- Color: Green, Other
- Forward Voltage: 2.2 volts
- Peak Wavelength: 569 nm
- Viewing Angle: 110 degrees
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Description: CTE is compatible with direct attachment of aluminum oxide and gallium-arsenide electronic circuitry. Titanium provides 300% more stiffness than aluminum and can be hermetic with walls as thin as .010?. This means an existing aluminum package can be redesigned to be
- Materials: Other
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. Resistance to molten metal corrosion: aluminum nitride ceramics are not corroded by aluminum liquid and other molten metals and gallium arsenide, especially molten aluminum liquid. It has excellent corrosion resistance and can be used as crucibles and casting mold (read more)
Browse Specialty Ceramics Datasheets for Xiamen Unipretec Ceramic Technology Co., Ltd.
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Photocathodes
Experience with gallium aluminum arsenide , which has produced the best results thus far, shows that blow 50% aluminum content, the oxidation rate is dramatically suppressed.
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Two-dimensional electron gas in heterojunction
A wide-gap semiconductor, gallium aluminum arsenide , is selectively doped.
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Nanotechnology Applications to Telecommunications and Networking
These growth mechanisms are based on top-down methods on top of bulk semiconductor wafers5 (e.g., gallium aluminum arsenide may be grown on a gallium arsenide substrate).
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Radiation Effects On Gallium Arsenide Integrated Optical Devices
Here, we discuss gallium arsenide (and gallium aluminum arsenide ) integrated optical devices for streak camera - based, high speed diagnostic systems, and focus on the radiation hardness of these devices.
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Radiation Effects On Solar Cells
The two generic solar cells of greatest importance are the silicon and the gallium aluminum arsenide cell.
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Optical Fiber Devices For Signal Processing
Gallium aluminum arsenide lasers which operate continuously at room temperature aq7 emit in a single longi- tudinal and single transverse mode have recently been developed.
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Gallium Arsenide Integrated Optical Devices In Adverse Environments
Fortunately, the band gap edge can be shifted slightly by using gallium aluminum arsenide , instead of gallium arsenide as the waveguide material.
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Advances in etching of semiconductor devices
The compounds gallium arsenide and gallium aluminium arsenide have the same type of crystallographic structure and the same lattice constant.
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Effect of Low-Level Laser Therapy on Human Adipose-Derived Stem Cells: In Vitro and In Vivo Studies
The total surface of the plate was irradiated for 15 min with 830 nm Ga–Al–As ( gallium aluminum arsenide ) laser (Headlite II LED; Lutronic Co., Goyang, Korea), which was designed for our study (Fig. 1).
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Fundamentals and applications of light-emitting diodes (LEDs) in in vitro plant growth and morphogenesis
The new generation LED is based on a gallium aluminum arsenide (GaAlAS) semiconductor material fabricated as a double hetero-structure on a transparent substrate, and has become a promising light source in experiments on in vitro plant growth and morphogenesis.