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Supplier: Hamamatsu Photonics Europe
Description: Large area, high-speed Si PIN photodiode The S3071 is a Si PIN photodiode having a relatively large photosensitive area yet it offers excellent frequency response at 40 MHz. This photodiode is suitable for FSO(free space optics) and high-speed pulsed light
- Active Area Diameter or Length: 5 mm
- Active Area Height: 5 mm
- Dark Current: 10 nA
- PN, PIN, or Avalanche: PIN Photodiode
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Supplier: Hamamatsu Photonics Europe
Description: Large area, high-speed Si PIN photodiode The S3072 is a Si PIN photodiode having a relatively large photosensitive area yet it offers excellent frequency response at 45 MHz. This photodiode is suitable for FSO(free space optics) and high-speed pulsed light
- Active Area Diameter or Length: 3 mm
- Active Area Height: 3 mm
- Dark Current: 10 nA
- PN, PIN, or Avalanche: PIN Photodiode
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Supplier: Hamamatsu Photonics Europe
Description: Large area, high-speed Si PIN photodiode The S3399 is a Si PIN photodiode having a relatively large photosensitive area yet it offers excellent frequency response at 100 MHz. This photodiode is suitable for FSO(free space optics) and high-speed pulsed light
- Active Area Diameter or Length: 3 mm
- Active Area Height: 3 mm
- Dark Current: 1 nA
- PN, PIN, or Avalanche: PIN Photodiode
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Supplier: Hamamatsu Photonics Europe
Description: Large area, high-speed Si PIN photodiode The S3883 is a Si PIN photodiode having a relatively large photosensitive area yet it offers excellent frequency response at 300 MHz. This photodiode is suitable for FSO(free space optics) and high-speed pulsed light
- Active Area Diameter or Length: 1.5 mm
- Active Area Height: 1.5 mm
- Dark Current: 1 nA
- PN, PIN, or Avalanche: PIN Photodiode
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Supplier: Electro Optical Components, Inc.
Description: (InGaAsSb) sensitive layer and the Aluminium Gallium Arsenide Antimonide (AlGaAsSb) “window” are grown on Gallium Antimonide (GaSb) substrates. The Photodiodes are mounted in standard TO-18 packages and for TE cooled versions in TO-5 packages. They have photosensitive areas with diameter of
- Active Area Diameter or Length: 0.2000 to 2 mm
- Dark Current: 500 to 500000 nA
- Operating Temperature: -40 to 50 C
- PN, PIN, or Avalanche: PIN Photodiode
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Supplier: RS Components, Ltd.
Description: The AEPX series, from Centronic, are a family of high speed silicon photodetectors. This group of photodiodes are available in various small active area sizes. The AEPX series are therefore ideal for high frequency fibre optic applications. An epitaxial structure enables
- Photodiode Material: Silicon
- Photodiode Package / Mounting: Other
- Sensitivity: 0.3700 A/W
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Supplier: Newport MKS
Description: (blue) and 2153 (black) These photoreceivers provide amazing amounts of gain (up to 2x1011 V/W) while being simple to use, making the most difficult spectroscopy or ?uorescence experiment easy. Their high-gain and low-noise performance is achieved by careful selection of the
- Photosensor Type: PIN Photodiode
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Photosensor Modules - InGaAs Photoreceiver, Femtowatt, 800-1700 nm, 1 mm Diameter, 8-32 / M4 -- 2153Supplier: Newport MKS
Description: (blue) and 2153 (black) These photoreceivers provide amazing amounts of gain (up to 2x1011 V/W) while being simple to use, making the most difficult spectroscopy or ?uorescence experiment easy. Their high-gain and low-noise performance is achieved by careful selection of the
- Photosensor Type: PIN Photodiode
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Supplier: Broadcom Inc.
Description: This family of gate drive optocouplers have a GaAsP LED. The LED is optically coupled to an integrated circuit with a power stage. These optocouplers are ideally suited for high frequency driving of power IGBT and MOSFETs used in Plasma Display Panels, high performance DC/DC
- Collector Emitter Breakdown Voltage: 5 volts
- Isolation Voltage: 1181 volts
- Mounting Option: Through Hole (Plug-in)
- Operating Temperature: -40 to 125 C
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Supplier: ams
Description: The TSL238T light-to-frequency converter combines a silicon photodiode and a current-to-frequency converter on a single monolithic CMOS integrated circuit. Output is a square wave (50% duty cycle) with frequency directly proportional to light intensity (irradiance) on the
- Input (Supply) Voltage: 2.7 to 5.5 volts
- Operating Temperature: -40 to 85 C
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Supplier: ams
Description: The TSL237 light-to-frequency converter combines a silicon photodiode and a current-to-frequency converter on a single monolithic CMOS integrated circuit. Output is a square wave (50% duty cycle) with frequency directly proportional to light intensity (irradiance) on the
- Input (Supply) Voltage: 2.7 to 5.5 volts
- Operating Temperature: -40 to 85 C
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Supplier: ams
Description: The TSL237 light-to-frequency converter combines a silicon photodiode and a current-to-frequency converter on a single monolithic CMOS integrated circuit. Output is a square wave (50% duty cycle) with frequency directly proportional to light intensity (irradiance) on the
- Input (Supply) Voltage: 2.7 to 5.5 volts
- Operating Temperature: -40 to 85 C
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Supplier: Electro Optical Components, Inc.
Description: Minimum Input Noise 270 fA/vHz Bandwidth up to 400 MHz Gain up to 106 V/A Flat frequency response Stabilized and Adjustable Bias Voltage Output for Biasing External Photodiodes EMI Shielded Case Users of high
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Supplier: Electro Optical Components, Inc.
Description: High speed voltage amplifiers with bandwidth up to 2.5 GHz Gain up to 60 dB (50,000 V/A) Input Noise 330 pV/vHz (6.6 pA/vHz) Integrated DC Path for Easy Operation with Fast Photodiodes Two Identical Signal Outputs (HSA-Y) DC
- Form Factor: Panel / Chassis Mount
- Input Impedance: 5.00E-5 Mohms
- Maximum Output: 2 +/-volts
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Description: using a progressive optimization of the equalizers, leading to a small number of parameters to optimize simultaneously Presents modifications to the RFT to design trans-impedance microwave amplifiers that are used for photodiodes acting as high impedance current sources Discusses the
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Supplier: Newport MKS
Description: The 1414-50 High Speed Multimode Fiber-Optic Detector has a flat response in both amplitude and phase up to 25 GHz and are optimized for frequency-domain applications. The high-sensitivity near-IR photodetector uses a 25 µm diameter back-illuminated InGaAs Schottky
- Bandwidth: 0.0 to 25000 MHz
- Connector Type: Other
- Receiver Rise Time: 0.0140 ns
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Supplier: Newport MKS
Description: and lowest noise. Constant current, high bandwidth: the output stage supports up to 1MHz modulation frequency for dithering the laser current in power and wavelength tuning applications. Constant optical power: provides constant optical power operation of your laser diode by
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Supplier: Artifex Engineering
Description: signal analysis Component testing Quality control OEM (eg: laser noise monitoring) MEASUREMENT PRINCIPLE The OPM200 amplifier employs high quality photodiodes and precision tr ansim- pedance in put stages to provide for low offset and high linearity
- Detector Mechanism: Semiconductor
- Operating Temperature: 0.0 to 60 C
- Optical Meter Type: Power Meter
- Power Range: 0.0030 to 0.0300 watts
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Supplier: Picosecond Pulse Labs, Inc.
Description: The Picosecond Advantage: This is a high performance biasing network with a 20 GHz frequency response. It is capable of handling 50 V and 500 mA current levels.Description: The Model 5545 Bias Tee is a broadband coaxial bias insertion tee and DC blocking capacitor with a 12 ps
- Connector Type: SMA
- DC Current: 500 milliamps
- DC Voltage: 50 volts
- Frequency Range: 6.50E-5 to 20 GHz
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Supplier: Microwave Photonic Systems, Inc.
Description: a wide array of communication applications. The link applications include antenna remoting, time and frequency reference distribution, RF delay lines, telemetry tracking, and point-to-point RF transmission.The receiver utilizes a high speed, low distortion PIN photodiode
- Bandwidth: 3000 MHz
- Connector Type: FC, SC, Other
- Operating Temperature: -40 to 185 F
- Photodiode Type: PIN
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Supplier: Microwave Photonic Systems, Inc.
Description: wide array of communication applications. The link applications include antenna remoting, time and frequency reference distribution, RF delay lines, telemetry tracking, and point-to-point RF transmission. The receiver utilizes a high speed, low distortion PIN photodiode detector
- Cable Type: Single Mode
- Connector Type: FC, SC, Other
- Operating Temperature: -40 to 185 F
- Photodiode Type: PIN
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Supplier: Picosecond Pulse Labs, Inc.
Description: The Picosecond Advantage: Our Model 5547 Bias Tee is a high performance biasing network with a 15 GHz frequency response. It is capable of handling 50 V and 500 mA current levels.Description: This is a broadband, coaxial bias insertion tee and DC blocking capacitor with a
- Connector Type: SMA
- DC Current: 500 milliamps
- DC Voltage: 50 volts
- Frequency Range: 5.00E-6 to 15 GHz
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Supplier: Picosecond Pulse Labs, Inc.
Description: Advantage: The Model 5546 Bias Tee is a high performance biasing network with 7 GHz bandwidth and a very small low-frequency cutoff. It is capable of handling 50 V and 500 mA current levels.Description: This is a broadband coaxial bias insertion tee and DC blocking capacitor with a 45
- Connector Type: SMA
- DC Current: 500 milliamps
- DC Voltage: 50 volts
- Frequency Range: 3.50E-6 to 7 GHz
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Supplier: Picosecond Pulse Labs, Inc.
Description: Advantage: The Model 5575A Bias Tee is a high performance biasing network with a 12GHz frequency response. It exhibits excellent transient response characteristics for pulses with fast transition times.Description: The Model 5575A is a broadband coaxial bias insertion tee and DC
- Connector Type: SMA
- DC Current: 500 milliamps
- DC Voltage: 50 volts
- Frequency Range: 1.00E-5 to 12 GHz
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Supplier: RS Components, Ltd.
Description: A range of high-performance JFET input operational amplifiers from Linear Technology. With input bias currents as low as 10pA or less these op amps are ideal for applications requiring minimal circuit loading such as integrators and photodiode amplifiers. Many of these devices are
- Bandwidth: 1 MHz
- Gain-Bandwidth Product (GBW): 5.5 MHz
- Package Type: PDIP, Other
- Pin Count: 8
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Supplier: RS Components, Ltd.
Description: A range of high-performance JFET input operational amplifiers from Linear Technology. With input bias currents as low as 10pA or less these op amps are ideal for applications requiring minimal circuit loading such as integrators and photodiode amplifiers. Many of these devices are
- Bandwidth: 1 MHz
- Gain-Bandwidth Product (GBW): 5.5 MHz
- Package Type: PDIP, Other
- Pin Count: 8
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Supplier: RS Components, Ltd.
Description: NPN transistor. Their metal can package makes them suitable for applications in harsh environments. . Features of the SD5600 and SD5610 photodetectors:. TO-46 metal can package. Acceptance angle: 6°. High noise immunity output Carrier Frequency = 100kHz Output Current = 18m
- Beam: Infrared
- Operating Temperature: 212 F
- Output: Current
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Supplier: Electro Optical Components, Inc.
Description: Ultra low noise - input noise down to .2 fA/ Hz Bandwidth up to 400 kHz Gain up to 1013 V/A Flat Frequency Response EMI-Shielded Case Why use a Preamplifier Module? Unlike desktop
- Maximum Output: 10 +/-volts
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Supplier: ValueTronics International, Inc.
Description: , electrical, and electro-optical transmission and reflection measurement capability. It is an excellent solution for testing light wave system components that operate at microwave frequencies and very high bit rates. This integrated system allows you to accurately characterize lasers,
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Supplier: Intellisense Microelectronics Ltd.
Description: • The ISL500KE is a highly integrated CMOS photo IC, widely used in diffuse reflection, cross beam curtain, through beam curtain, and similar applications • The chip integrates the following features: PD photodiode receiver, LED emitter driver, Switched-capacitor signal amplifier
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FEMTO's OE-300 photoreceiver series uses premium quality photodiodes followed by a high (read more)
Browse Photosensor Modules Datasheets for Electro Optical Components, Inc. -
blue, green, and infrared OSRAM laser diodes. Osram blue laser diodes are available in single mode and multi-mode. Single mode green lasers have a high operating temperature range of up to 85°C without any active cooling required, unlike frequency-doubled lasers. Single (read more)
Browse Lasers Datasheets for World Star Tech -
Integrating a high-power 850nm infrared VCSEL emitter or infrared LED emitter, equipped with a high-sensitivity photodiode receiver and an internal integrated physical infrared filter, HPS-16X series sensors can measure longer distance and improve the anti-ambient light ability (read more)
Browse Time of Flight Optical Sensors Datasheets for Hypersen Technologies Co., Ltd. -
The ISL500KE is a highly integrated CMOS photo IC, widely used in diffuse reflection, cross beam curtain, through beam curtain, and similar applications The chip integrates the following features: PD photodiode receiver, LED emitter driver, Switched (read more)
Browse Photoelectric Sensors Datasheets for Intellisense Microelectronics Ltd. -
. In high-frequency applications, parasitic capacitances remain a concern. They can lead to instability and oscillations, so careful design and compensation networks are needed (read more)
Browse Amplifier and Comparator Chips Datasheets for ODG (Origin Data Global) -
lasers have a high operating temperature range of up to 85°C without any active cooling required, unlike frequency-doubled lasers. Single-mode blue and green laser diodes deliver up to 110mW with excellent efficiency, resulting in minimal temperature increase during operation. These diodes can (read more)
Browse Lasers Datasheets for World Star Tech -
1. Product Overview The IMS ISL700_64A is a highly integrated CMOS photoelectric sensor that integrates 64 photodiodes(PDs) and their associated signal-processing circuitry. It is widely used in multi-mode smart photoelectric sensors based on distance measurement (read more)
Browse Optical Triangulation Position Sensors Datasheets for Intellisense Microelectronics Ltd. -
green lasers have a high operating temperature range of up to 85°C without any active cooling required, unlike frequency-doubled lasers. Single-mode blue and green laser diodes deliver up to 110mW with excellent efficiency, resulting in minimal temperature increase during operation. These (read more)
Browse Diode Lasers Datasheets for World Star Tech -
multi-mode. Single mode green lasers have a high operating temperature range of up to 85°C without any active cooling required, unlike frequency-doubled lasers. Single-mode blue and green laser diodes deliver up to 110mW with excellent efficiency, resulting in minimal temperature (read more)
Browse Diode Lasers Datasheets for World Star Tech
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Amplifying High-Impedence Sensors ? Photodiode Example
AN951 Amplifying High-Impedance Sensors - Photodiode Example and C reduce the output noise. The output noiseR N N Author: Kumen Blake and Steven Bible is also kept low by not over-compensating the feedback Microchip Technology Inc. loop. INTRODUCTION C F Embedded systems contain many types
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Neutron Hardness of Photodiodes For Use in Passice Rubidium Frequency Standards (.pdf)
The photodiode used for optical detection of the atomic resonance in a passive rubidium frequency standard (RFS) is a critical component that can limit the radiation hardness of the standard at high neutronfluence levels. With the goal of obtaining a more neutron-resistant photodiode than
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Ultra-high Frequency Linear Fiber Optic Systems
B Ultra- high Frequency Photodiodes and Receivers . . . . . . . . . .
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Theory And Status Of High Performance Heterodyne Detectors
…CO2 laser pulse, 2) a raster scan across the active area with a CO2 beam modu- lated at 1 GHz, 3) the frequency spectrum of the local- oscillator- induced shot noise, 4) measurement of the high frequency photodiode impedance (with and without…
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Wide-Bandwidth CO2 Laser Photomixers
frequency spectra of the local -oscillator- induced shot noise, 4) measurement of the high frequency photodiode impedance (with and without LO flux) using an RF network analyzer, and 5) blackbody heterodyne radiometric measurements to determine the NEP at various frequencies.
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EFFECT OF FLUCTUATIONS OF DC CURRENT ON PROPERTIES OF PLASMA JET GENERATED IN PLASMA SPRAYING TORCH WITH GERDIEN ARC
For the both types of power supply the arc characteristics were measured, time aver- aged plasma jet properties were determined from spectroscopic measurements and plasma jet fluctuations were analysed on the basis of diagnostics with an ar- ray of high frequency photodiodes .
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CMOS detector with combined in-situ demodulation and image acquisition
The grey shaded squares indicate high frequency photodiodes for demodulation, the white squares indicate LF photodiodes for the image acquisition.
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Low-frequency noise, reliability, and quality of high-speed avalanche breakdown detectors
However, in devices with thin multiplication length, that often takes place for high frequency photodiodes , nonlocal effects become significant, and it needs to account the path that a carrier travels before gaining sufficient energy for impact ionization [12, 13].
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Miniature oscillators based on optical whispering gallery mode resonators
To operate the device we lock a laser to the high-Q resonator also used as an electro-optic modulator (EOM) [14], send the light exiting the resonator to a high frequency photodiode , amplify the microwave signal escaping the diode and apply…
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Building Electro-Optical Systems: Making It all Work 2nd Edition Complete Document
It is very useful when you need to get something working quickly, for example, a high frequency photodiode front end or a diplexer (see the problems in the Supplementary Material).
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Analogue Optical Fibre Communications
The electrical beat spectrum from each device was displayed on an if spectrum analyser via a preselected external mixer and a high frequency photodiode .
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Simple and economic optical high-speed photo-detector ac response determination method in the 850 nm spectral range
…Anderson T, Johnston A R and Eklund H 1980 Temporal and frequency response measurements of avalanche photodiodes from noise measurements Appl. Opt. 19 3496–9 Baney D M, Sorin W V and Newton S A 1994 High frequency photodiode characterization using a filtered…