-
Supplier: ASAP Semiconductor LLC
Description: EVAL MODULE FOR TPS60230-047 20mA 5 Non-Isolated - Charge Pump 2.7 ~ 6 V Board TPS60230
- Category: Development Board
-
Supplier: ASAP Semiconductor LLC
Description: EVALUATION MOD TPS60231EVM-047 20mA 3 Non-Isolated - Charge Pump 2.7 ~ 6 V Board TPS60231
- Category: Development Board
-
Supplier: Win Source Electronics
Description: Manufacturer: Texas Instruments Win Source Part Number: 778855-LM2793LDEV Features: Charge Pump Voltage - Output: 4V Voltage - Input: 2.7 V ~ 5.5 V Part Status: Obsolete(EOL) Supplied Contents: Board(s) Utilized IC / Part: LM2793 Family Name: LM2793 Outputs and Type: 2,
- Input Voltage: 2.7 to 5.5 volts
- Output Voltage: 4 volts
- Form Factor: Integrated Circuit (IC)
-
-
Supplier: Kussmaul Electronics Company, Inc.
Description: Run with A.C. Power Applied The Auto Charge D Pump Plus is a small air compressor and a dual battery system automatic battery charger designed especially for vehicles with a DDEC engine control and a separate engine battery. The compressor is a standard Auto Pump. These vehicles
- Input Voltage: 120 volts
- Charging Current: 25 amps
- Output Voltage: 12 volts
-
Supplier: Cirrus Logic, Inc.
Description: devices include a charge pump drive, which provides a negative bias voltage to the on-chip amplifiers. These devices also include a fourth-order Delta Sigma modulator followed by a digital filter, which provides eight selectable-output word rates. The digital filters are designed to
- Resolution: 16 bits
- Package Type: SSOP
- ADC Type: Sigma-Delta
-
Supplier: Infineon Technologies AG
Description: communiction via PMBus to main CPU, reset, shutdown, retry and digital SOA control gate driver and charge pump for a cotrolled turn ON and safe operation. Summary of Features VIN: -6.5 V to -80 V ( 100 V for 500 ms) Dedicated 12-Bit V/I ADCs Active monitoring: V ≤ 0.5%, I ≤ 1.3% Active
- Features: Other
-
Supplier: Infineon Technologies AG
Description: cost reduction Very low voltage overshoot Potential Applications Synchronous rectification Solar micro inverter Isolated DC-DC converters Motor control for 12-48 V systems Or-ing switches Applications Automotive electric pumps and fans 12 V Programmable logic controller (PLC)
- rDS(on): 0.01 ohms
- TJ: -55 to 150 C
- VGS(off): 1.2 to 2.2 volts
- Features: MOSFET, Other, Power MOSFET
-
Supplier: Cirrus Logic, Inc.
Description: reject both 50 Hz and 60 Hz (±3 Hz) line interference simultaneously. Low power, single-conversion settling time, programmable output rates and the ability to handle negative input signals make these single-supply products ideal solutions for isolated and non-isolated applications.
- Resolution: 24 bits
- Package Type: SSOP
- ADC Type: Sigma-Delta
-
Supplier: Infineon Technologies AG
Description: frequency up to 20kHz and to choose between two-phase or three-phase modulation, which helps reduce switching losses. Infineon's CoolMOS™ CFD superjunction MOSFET series offers low on-resistance, as well as low capacitances and gate charge to minimize both conduction and switching losses.
- Category: Development Board
- Features: Other
-
Supplier: Infineon Technologies AG
Description: 5.5 A, 5.7 kV (rms) single-channel isolated gate driver with seperate output, 180 ns input filter, UL 1577 & VDE 0884-11 certified, 10.5 V UVLO EiceDRIVER™ Compact single-channel isolated gate driver with 5.5 A typical sinking and sourcing peak output current in DSO-8 wide-body package
- Peak Output Current: 5.5 amps
- Supply Voltage: 3.1 to 17 volts
- Propagation Delay: 280 ns
- Driver Type: High-side Gate Driver
-
Supplier: ValueTronics International, Inc.
Description: download, analysis & report writing. 100 A Shunt with Cables (0.001 Ω, 0 to 0.5 MHz) For the Norma 4000/5000 Series Applications: Electric motors Inverter drive systems Lighting systems Transformers Automotive Switching power supplies and UPS Charge pumps/boost converters Current
Find Suppliers by Category Top
Conduct Research Top
-
Designing Atmospheric-Pressure Plasma Sources for Surface Engineering of Nanomaterials
breast cancer, respectively. Trapping frequency responses. of each cell type were distinct, with the largest difference between the cells found at 20. and 30 V. MDA-MB-231 cells were successfully isolated from a population containing. MCF10A and MCF7 cells at 30 V and 164 kHz. The ability
More Information Top
Indicates content that may require registration and/or purchase.
-
A monolithic isolation amplifier in silicon-on-insulator CMOS: Testing and applications
In the latter config- uration, an isolation charge pump operating off the output power supply provides power to the input differential cir- cuitry [14].
-
Output voltage ripple reduction of a high power factor mode operated isolated charge-pump AC/DC converter
Abslroct - In this paper output voltage ripple reduction technique for a new ACIDC-converter topology based on a half- bridge driven transformer isolated charge pump is presented and studied experimentally.
-
A monolithic isolation amplifier in silicon-on-insulator CMOS
The device uses an isolated charge pump circuit to power the input circuit from the isolated output side and thus can be used as sensing device.
-
The determination of Si-SiO2 interface trap density in irradiated four-terminal VDMOSFETs using charge pumping
… form the basis for determining an optimum approach to charge pumping the four-terminal VDMOSFET; that is, the source should be grounded to minimize subthreshold channel current, while the body should be reverse biased to isolate charge pumping current in the drain.
-
Monolithic digital galvanic isolation buffer fabricated in silicon on sapphire CMOS
The system includes an integrated isolation charge pump to power the input circuit and is hence capable of operating from a single 3.3 V power supply.
-
A 2.6V Silicon-on Sapphire CMOS current imbalance sensing circuit for neurostimulation applications
… Golam M. Newaz, Biocompatibility assessment of next generation materials for brain implantable microelectrodes, Materials Letters, Volume 65, Issue 5, 15 March 2011, Pages 876-879 [5] Culurciello, E.; Pouliquen, P.O.; Andreou, A.G., " Isolation charge pump fabricated in silicon on …
-
Architecture of a μRFID with integrated antenna in 3D SOI-CMOS
Pouliquen, and A. G. Andreou, " Isolation charge pump fabricated in silicon on sapphire CMOS technology," Electronics Letters, vol.
-
Nonvolatile Flash Memories in Silicon-on-sapphire CMOS
[8] E. Culurciello, P. Pouliquen, and A. Andreou, “An isolation charge pump fabricated in silicon on sapphire CMOS technology,” IEE Electronics Letters, vol.
-
Design of a high side driver in multipower-BCD and VIPower technologies
ocming a t the N+/P buried layer junction, mwjt be higher than the supply voltage to allow the irrplementation of an isolated charge pump circuit;c) the gainoftheparasitic .
-
Capacitive Inter-Chip Data and Power Transfer for 3-D VLSI
[18] E. Culurciello, P. Pouliquen, and A. Andreou, “An isolation charge pump fabricated in silicon-on-sapphire CMOS technology,” Electron. Lett., vol.