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Supplier: OSI Optoelectronics
Description: Silicon Avalanche Photodiodes make use of internal multiplication to achieve gain due to impact ionization. The result is the optimized series of high Responsivity devices, exhibiting excellent sensitivity. OSI Optoelectronics offers several sizes of detectors that are available
- Active Area Diameter or Length: 3 mm
- Dark Current: 15 nA
- Operating Temperature: -40 to 70 C
- PN, PIN, or Avalanche: Avalanche Photodiode
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Supplier: OSI Optoelectronics
Description: Silicon Avalanche Photodiodes make use of internal multiplication to achieve gain due to impact ionization. The result is the optimized series of high Responsivity devices, exhibiting excellent sensitivity. OSI Optoelectronics offers several sizes of detectors that are available
- Active Area Diameter or Length: 0.3000 mm
- Dark Current: 1 nA
- Operating Temperature: -40 to 70 C
- PN, PIN, or Avalanche: Avalanche Photodiode
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Supplier: OSI Optoelectronics
Description: Silicon Avalanche Photodiodes make use of internal multiplication to achieve gain due to impact ionization. The result is the optimized series of high Responsivity devices, exhibiting excellent sensitivity. OSI Optoelectronics offers several sizes of detectors that are available
- Active Area Diameter or Length: 0.5000 mm
- Dark Current: 1.8 nA
- Operating Temperature: -40 to 70 C
- PN, PIN, or Avalanche: Avalanche Photodiode
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Supplier: Electro Optical Components, Inc.
Description: The Silicon Carbide (SiC) UV APD has many of the properties of other APDs in that it is extremely sensitive and has high signal gain, but is only sensitive to UV (see wavelength response curve above). Because the substrate is tougher SiC, the bias voltage is higher than silicon based
- Active Area Diameter or Length: 0.0044 mm
- PN, PIN, or Avalanche: Avalanche Photodiode
- Photodiode Material: Silicon Carbide
- Photodiode Package / Mounting: Other
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Supplier: Marktech Optoelectronics
Description: Marktech offers a large assortment of Photo Detectors ranging from standard silicon detectors including Photo Diodes, Photo Transistors; Avalanche Photodiodes to InP and InGaAs Pin Photodiodes. Our silicon detectors have a spectral sensitivity range in the 400nm to
- Active Area Diameter or Length: 0.0400 mm
- Active Area Height: 230 mm
- Dark Current: 0.0500 nA
- Operating Temperature: -20 to 85 C
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Supplier: First Sensor AG
Description: These avalanche photodiodes were developed specifically for LIDAR applications and laser rangefinders. The series of products contains linear and matrix arrays with multiple sensors on one monolithic die, e.g. 8, 16, 64 pixels. Special features Fast rise time in 900 nm
- Active Area Diameter or Length: 4 mm
- Array: Yes
- Dark Current: 7 to 75 nA
- PN, PIN, or Avalanche: Avalanche Photodiode
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Supplier: First Sensor AG
Description: Due to their high gain and speed, these APDs are suitable for many industrial applications such as distance measurement, laser scanning and optical communication. Special features Maximum sensitivity at 800 nm Optimized for high speeds Low temperature coefficient Fast rise time Potentially low bias
- Active Area Diameter or Length: 0.2300 mm
- Dark Current: 0.2000 to 0.5000 nA
- PN, PIN, or Avalanche: Avalanche Photodiode
- Photodiode Material: Silicon
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Supplier: First Sensor AG
Description: Due to their high gain and speed, these APDs are suitable for many industrial applications such as distance measurement, laser scanning and optical communication. Special features Maximum sensitivity at 800 nm Optimized for high speeds Low temperature coefficient Fast rise time Potentially low bias
- Active Area Diameter or Length: 0.2300 mm
- Dark Current: 0.2000 to 0.5000 nA
- PN, PIN, or Avalanche: Avalanche Photodiode
- Photodiode Material: Silicon
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Supplier: First Sensor AG
Description: These avalanche photodiodes are suitable for laser rangefinders, targeting systems or any applications using YAG lasers or similar NIR radiation sources. Features: High quantum yield at 1064 nm High sensitivity Low noise High speed Optimized for longer wavelengths
- Active Area Diameter or Length: 0.5000 mm
- Dark Current: 1.5 nA
- PN, PIN, or Avalanche: Avalanche Photodiode
- Photodiode Material: Silicon
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Supplier: Hamamatsu Photonics
Description: 4 × 8 element APD array with low noise and enhanced short-wavelength sensitivity The S8550-02 is an APD (avalanche photodiode) array designed for short wavelength detection, featuring low noise and low terminal capacitance. The S8550-02 also offers uniform gain and small crosstalk
- Active Area Diameter or Length: 1.6 mm
- Active Area Height: 1.6 mm
- Array: Yes
- Dark Current: 10 nA
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Supplier: Hamamatsu Photonics
Description: Low bias operation, for 800 nm band, TE-cooled type This is a TE-cooled type APD with low-bias operation, capable of high accuracy detection. Features - Stable operation at low bias - High-speed response - High sensitivity and low noise
- Active Area Diameter or Length: 1 mm
- Active Area Height: 1 mm
- Dark Current: 2 nA
- PN, PIN, or Avalanche: Avalanche Photodiode
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Supplier: Hamamatsu Photonics
Description: Low bias operation, for 800 nm band, TE-cooled type This is a TE-cooled type APD with low-bias operation, capable of high accuracy detection. Features - Stable operation at low bias - High-speed response - High sensitivity and low noise
- Active Area Diameter or Length: 3 mm
- Active Area Height: 3 mm
- Dark Current: 10 nA
- PN, PIN, or Avalanche: Avalanche Photodiode
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Supplier: Hamamatsu Photonics
Description: Low bias, high-speed Si APD for 900 nm The S12426 series Si APD are designed to provide a peak sensitivity wavelength in the 900 nm band where optical rangefinders are increasingly used. The S12426 series delivers faster response and lower bias operation than our existing Si APD (S9251 series).
- Active Area Diameter or Length: 0.2000 mm
- Active Area Height: 0.2000 mm
- Dark Current: 1 nA
- PN, PIN, or Avalanche: Avalanche Photodiode
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Supplier: Marktech Optoelectronics
Description: Photo Detectors Avalanche Photo Diodes Silicon Photo Transistors InGaAs Photo Diodes Custom Detectors Product Selector
- Active Area Diameter or Length: 1.21 mm
- Photodiode Material: Silicon
- Photodiode Package / Mounting: Other
- Spectral Response: Visible
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Supplier: Marktech Optoelectronics
Description: Photo Detectors Avalanche Photo Diodes Silicon Photo Transistors InGaAs Photo Diodes Custom Detectors Product Selector
- Active Area Diameter or Length: 10 mm
- Photodiode Material: Silicon
- Photodiode Package / Mounting: Other
- Spectral Response: Visible
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Supplier: Photonique SA
Description: UV & blue light solidstate photon detector/counter; 2mm sensor pitch
- Active Area Diameter or Length: 1 mm
- Active Area Height: 1 mm
- Array: Yes
- Dark Current: 10000 nA
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Supplier: Photonique SA
Description: UV-blue solidstate photon detector/counter
- Active Area Diameter or Length: 1 mm
- Active Area Height: 1 mm
- Dark Current: 10000 nA
- Operating Temperature: -40 to 40 C
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Supplier: Photonique SA
Description: Visible light solidstate photon detector/counter for matrix assemblies
- Active Area Diameter or Length: 2.1 mm
- Active Area Height: 2.1 mm
- Dark Current: 15000 nA
- Operating Temperature: -40 to 40 C
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Supplier: RS Components, Ltd.
Description: The APD series 8-150, from OSI Optoelectronics, are a family of silicon avalanche photodiodes, optimised for operation with 800nm wavelengths. They come in hermetic metal packages with 0.2, 0.5, 1 or 1.5mm active area diameter options. The APD series 8-150 photodiodes
- Photodiode Material: Silicon
- Photodiode Package / Mounting: Other
- Spectral Response: IR
- Spectral Response Range: 600 nm
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Supplier: SPIE - Education
Description: , photodiode, avalanche photodiode, and silicon photomultiplier) using the WITS$ methodology. The approach is based on four fundamental properties of light â?? wavelength (W), intensity (I), temporal behavior (T), and spatial characteristics (S) â?? and cost ($). After
- Continuing Education Credit (CEU): Yes
- Industry: Aerospace / Defense
- Modality: Off Site (Conference / Seminar)
- Technology / Subject: Photonics / Optics, Specialty / Other
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The Silicon Carbide (SiC) UV APDs are extremely sensitive and have high signal gain, but are only sensitive to UV . Because the substrate is tougher SiC, the bias voltage is higher than (read more)
Browse UV Sensors Datasheets for Electro Optical Components, Inc.
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Medical Imaging Using Silicon Photomultipliers (SiPMs)
KETEK SiPMs provide excellent performance for these detection tasks and are the superior alternative. compared to the traditionally used light detectors like PMTs (photomultiplier tubes) and APDs. (avalanche photodiodes).
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The Wonder of Nanotechnology: Quantum Optoelectronic Devices and Applications
Infrared sensors have been available since the 1940s to detect, measure, and monitor the thermal radiation emitted by objects.1,2 Silicon avalanche photodiodes (SiAPDs) are a potential candidate for low-level light detection, especially in the visible and near-infrared (NIR …
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OSA | A silicon avalanche photodetector fabricated with standard CMOS technology with over 1 THz gain-bandwidth product
… J. Paniccia, M. Zadka, S. Litski, G. Sarid, A. Pauchard, Y.-H. Kuo, H.-W. Chen, W. S. Zaoui, J. E. Bowers, A. Beling, D. C. McIntosh, X. Zheng, and J. C. Campbell, âMonolithic germanium/ silicon avalanche photodiodes with 340 GHz gain …
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OSA | Scintillation induced response in passively-quenched Si-based single photon counting avalanche diode arrays
○ Multipixel silicon avalanche photodiode with ultralow dark count rate at liquid nitrogen temperature (OE .
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OSA | Multipixel silicon avalanche photodiode with ultralow dark count rate at liquid nitrogen temperature
Multipixel silicon avalanche photodiode with ultralow dark count rate at liquid nitrogen temperature .
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OSA | High bandwidth on-chip silicon photonic interleaver
… Paniccia, M. Zadka, S. Litski, G. Sarid, A. Pauchard, Y. H. Kuo, H. W. Chen, W. S. Zaoui, J. E. Bowers, A. Beling, D. C. McIntosh, X. G. Zheng, and J. C. Campbell, âMonolithic germanium/ silicon avalanche photodiodes with 340 GHz gain …
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OSA | Low-voltage, high-extinction-ratio, Mach-Zehnder silicon optical modulator for CMOS-compatible integration
… Morse, M. J. Paniccia, M. Zadka, S. Litski, G. Sarid, A. Pauchard, Y. Kuo, H. Chen, W. S. Zaoui, J. E. Bowers, A. Beling, D. C. McIntosh, X. Zheng, and J. C. Campbell, âMonolithic germanium/ silicon avalanche photodiodes with 340 GHz gain …
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OSA | High speed InAs electron avalanche photodiodes overcome the conventional gain-bandwidth product limit
… Paniccia, M. Zadka, S. Litski, G. Sarid, A. Pauchard, Y.-H. Kuo, H.-W. Chen, W. S. Zaoui, J. E. Bowers, A. Beling, D. C. McIntosh, X. Zheng, and J. C. Campbell, âMonolithic germanium / silicon avalanche photodiodes with 340GHz gain-bandwidth …
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OSA | High-sensitivity 10 Gbps Ge-on-Si photoreceiver operating at λ ~1.55 μm
… J. Paniccia, M. Zadka, S. Litski, G. Sarid, A. Pauchard, Y.-H. Kuo, H.-W. Chen, W. S. Zaoui, J. E. Bowers, A. Beling, D. C. McIntosh, X. Zheng, and J. C. Campbell, “Monolithic germanium/ silicon avalanche photodiodes with 340 GHz gain–bandwidth …
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OSA | Frequency response and bandwidth enhancement in Ge/Si avalanche photodiodes with over 840GHz gain-bandwidth-product
… Morse, M. J. Paniccia, M. Zadka, S. Litski, G. Sarid, A. Pauchard, Y. H. Kuo, H. W. Chen, W. Sfar Zaoui, J. E. Bowers, A. Beling, D. C. Mcintosh, and J. C. Campbell, “Monolithic germanium/ silicon avalanche photodiodes with 340GHz gain-bandwidth …
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High-Speed Communication Detector Characterization By Bit Error Rate Measurements
RCA silicon avalanche photodiodes are superior at 1064 nm, but the Rockwell hybrid 3 -5 avalanche photodiode preamplifiers offer potentially superior performance.