Silicon Avalanche Photodiode

Description: Silicon Avalanche Photodiodes make use of internal multiplication to achieve gain due to impact ionization. The result is the optimized series of high Responsivity devices, exhibiting excellent sensitivity. OSI Optoelectronics offers several sizes of detectors that are available

• Sensitivity: 42 A/W
• Spectral Response Range: 350 to 1,100 nm
• Active Area Diameter or Length: 3 mm
• Rise Time: 5 ns

Description: The Silicon Carbide (SiC) UV APD has many of the properties of other APDs in that it is extremely sensitive and has high signal gain, but is only sensitive to UV (see wavelength response curve above). Because the substrate is tougher SiC, the bias voltage is higher than silicon based

• Active Area Diameter or Length: 0.0044 mm
• Photodiode Type: Avalanche Photodiode
• Features: Other
• Photodiode Material: Silicon Carbide

Description: SILICON AVALANCHE PHOTODIODE, LCC-6; No. of Pins:6Pins; Diode Case Style:LCC; Wavelength of Peak Sensitivity:800nm; Angle of Half Sensitivity ±:-; Dark Current:5000pA; Operating Temperature Min:-20°C; Operating Temperature Max:60°C RoHS Compliant: Yes

Description: Marktech offers a large assortment of Photo Detectors ranging from standard silicon detectors including Photo Diodes, Photo Transistors; Avalanche Photodiodes to InP and InGaAs Pin Photodiodes. Our silicon detectors have a spectral sensitivity range in the 400nm to

• Sensitivity: 50 to 55 A/W
• Spectral Response Range: 400 to 1,100 nm
• Active Area Diameter or Length: 0.04 mm
• Active Area Height: 230 mm

Description: These avalanche photodiodes were developed specifically for LIDAR applications and laser rangefinders. The series of products contains linear and matrix arrays with multiple sensors on one monolithic die, e.g. 8, 16, 64 pixels. Special features Fast rise time in 900 nm range Low gain

• Spectral Response Range: 850 to 1,070 nm
• Active Area Diameter or Length: 4 mm
• Rise Time: 5 ns
• Dark Current: 7 to 75 nA

Description: Due to their high gain and speed, these APDs are suitable for many industrial applications such as distance measurement, laser scanning and optical communication. Special features Maximum sensitivity at 800 nm Optimized for high speeds Low temperature coefficient Fast rise time Potentially low bias

• Spectral Response Range: 650 to 850 nm
• Active Area Diameter or Length: 0.5 mm
• Rise Time: 0.35 ns
• Dark Current: 0.5 to 1 nA

Description: These avalanche photodiodes are suitable for laser rangefinders, targeting systems or any applications using YAG lasers or similar NIR radiation sources. Features: High quantum yield at 1064 nm High sensitivity Low noise High speed Optimized for longer wavelengths

• Spectral Response Range: 850 to 1,064 nm
• Active Area Diameter or Length: 0.5 mm
• Rise Time: 4 ns
• Dark Current: 1.5 nA

Description: Silicon Avalanche Photodiode

• Spectral Response Range: 200 to 1,000 nm
• Photodiode Type: Avalanche Photodiode
• Features: Other
• Photodiode Spectral Response: Visible

Description: SILICON APD, 1064NM

• Sensitivity: 0.36 A/W
• Spectral Response Range: 400 to 1,100 nm
• Rise Time: 2 ns
• Operating Temperature: -45 to 85 C

Description: 4 × 8 element APD array with low noise and enhanced short-wavelength sensitivity The S8550-02 is an APD (avalanche photodiode) array designed for short wavelength detection, featuring low noise and low terminal capacitance. The S8550-02 also offers uniform gain and small crosstalk

• Spectral Response Range: 320 to 1,000 nm
• Active Area Diameter or Length: 1.6000000000000003 mm
• Active Area Height: 1.6000000000000003 mm
• Dark Current: 10 nA

Description: High-speed, compact Si APD that does not require temperature adjustment The S15415 series is a gain-stabilized APD (GS APD) with a built-in temperature compensation function inside the sensor. This realizes constant gain without the need for temperature adjustment. It is suitable for laser monitors

• Sensitivity: 0.52 A/W
• Spectral Response Range: 400 to 1,000 nm
• Active Area Diameter or Length: 0.5 mm
• Active Area Height: 0.5 mm

Description: No Description Provided

• Spectral Response Range: 400 to 950 nm
• Active Area Diameter or Length: 2.1 mm
• Active Area Height: 2.1 mm
• Rise Time: 2.5 ns

Description: No Description Provided

• Spectral Response Range: 350 to 800 nm
• Active Area Diameter or Length: 1 mm
• Active Area Height: 1 mm
• Rise Time: 1.8 ns

Description: No Description Provided

• Spectral Response Range: 410 to 950 nm
• Active Area Diameter or Length: 3 mm
• Active Area Height: 3 mm
• Rise Time: 2 ns

Description: Visible/near infrared MPPC MPPC is a type of device called SiPM (silicon photomultipliers). It is a new type of photon counting device that consists of multiple Geiger mode APD (avalanche photodiode) pixels. It is an opto-semiconductor with outstanding photon counting capability

• C_T: 350 pF
• Features: Array, Avalanche Diodes, Other

Description: photodiode, avalanche photodiode, and silicon photomultiplier) using the WITS$ methodology. The approach is based on four fundamental properties of light − wavelength (W), intensity (I), temporal behavior (T), and spatial characteristics (S) − and cost ($). After

• Industry: Aerospace / Defense
• Type: Continuing Education Credit (CEU), Course
• Delivery: Off Site (Conference / Seminar)
• Technology / Subject Expertise: Photonics / Optics