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Supplier: 3X Ceramic Parts Company Limited
Description: greatly limits the industrialization research of silicon nitride powder directly preparing silicon nitride ceramic substrate. However, silicon nitride ceramics with a thermal conductivity of 177w · M-1 · k-1 by nitriding silicon powder. In addition,
- Density: 3.1799979930159545 g/cc
- Thermal Conductivity: 85 W/m-K
- MOR / Flexural Strength: 101,525.7875500379 to 116,029.4714857576 psi
- Shape / Form: Bar Stock
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Description: Silicon nitride substrates offer exceptional heat resistance, ultra-high hardness, and fracture toughness, thus exhibiting outstanding mechanical properties under high-frequency vibration or high temperature circumstances. As a result, they are frequently used in industries like
- Density: 3.1999979803934133 to 3.2999979172807077 g/cc
- Applications: Corrosion Protection, Electrical / HV Parts, Electronics / RF-Microwave
- Performance Features: Hard
- Shape / Form: Plate / Board (e.g., Fiberboard)
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Supplier: 3X Ceramic Parts Company Limited
Description: Ceramic Fork Aluminum Nitride Vacuum Plate for LED wafer Aluminum nitride ceramic fork have excellent physical properties such as high thermal conductivity, low dielectric constant, reliable electrical insulation, thermal expansion coefficient matched with silicon,
- Density: 3.359997879413084 g/cc
- Thermal Conductivity: 170 W/m-K
- MOR / Flexural Strength: 58,014.7357428788 psi
- Material Type: Aluminum Nitride, Specialty Ceramic
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Supplier: 3X Ceramic Parts Company Limited
Description: Diameter 1.0mm 1.5mm 2.0mm Silicon Nitride Rod The prime features of silicon nitride rod 1. Extraordinary thermal shock, it can withstand up to1000ºC 2. It's easier to do precise machining, the tolerance can be 0.001mm 3. Chemical corrosion resistance under high
- Density: 3.1999979803934133 g/cc
- Thermal Conductivity: 15 to 20 W/m-K
- MOR / Flexural Strength: 87,022.1036143182 psi
- Compressive / Crushing Strength: 362,592.0983929925 psi
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Description: Aluminum Nitride (AlN) Ceramics Silicon Nitride (Si3N4) Ceramics Hot Pressed Boron Nitride (HBN) Ceramics Pyrolytic Boron Nitride (PBN) Ceramics Silicon Carbide (SiC) Ceramics Boron Carbide (B4C) Ceramics Titanium Diboride (TiB2) Ceramics Cerium Hexaboride
- Material Type: Boron Nitride
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Description: provide high-quality Silicon Carbide ceramics at a competitive price. More Materials: Our Advanced Ceramics include: Alumina (Al2O3) Ceramics Zirconia (ZrO2) Ceramics Beryllia (BeO) Ceramics Aluminum Nitride (AlN) Ceramics Silicon Nitride (Si3N4) Ceramics Hot Pressed
- Shape / Form: Plate / Board (e.g., Fiberboard)
- Material Type: Silicon Carbide, Specialty Ceramic
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Description: Advanced Materials is a leading ceramic materials supplier. We provide high-quality Boron Nitride ceramics at a competitive price. More Materials: Our Advanced Ceramics include: Alumina (Al2O3) Ceramics Zirconia (ZrO2) Ceramics Beryllia (BeO) Ceramics Aluminum Nitride (AlN) Ceramics
- Material Type: Boron Nitride
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Description: price. More Materials: Our Advanced Ceramics include: Alumina (Al2O3) Ceramics Zirconia (ZrO2) Ceramics Beryllia (BeO) Ceramics Aluminum Nitride (AlN) Ceramics Silicon Nitride (Si3N4) Ceramics Hot Pressed Boron Nitride (HBN) Ceramics Pyrolytic Boron Nitride (PBN)
- Material Type: Aluminum Nitride
- Shape / Form: Plate / Board (e.g., Fiberboard)
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Supplier: 3X Ceramic Parts Company Limited
Description: Silicon carbide carrier disk, silicon carbide etching disk, ICP etching disk Silicon carbide tray for LED etching (SiC tray) φ 600mm is a special accessory for deep silicon etching (ICP etching machine) Wafer carrier, also known as wafer carrier and silicon wafer
- Density: 3.119998030883578 g/cc
- MOR / Flexural Strength: 56,564.36734930683 psi
- Compressive / Crushing Strength: 261,066.3108429546 psi
- Material Type: Carbide Materials, Silicon Carbide
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Supplier: CoorsTek
Description: portfolio of semiconductor grade ceramics including: Aluminas (Al2O3): PlasmaPure™, Sapphal™, and other high-purity compositions Aluminum Nitride (AlN) PureSiC® Silicon Carbide (SiC) Coatings: CVD SiC, ESD-Safe, Yttria
- Material Type: Alumina / Aluminum Oxide, Aluminum Nitride, Carbide Materials, Silicon Carbide, Specialty Ceramic
- Applications: Chemical / Materials Processing
- Shape / Form: Fabricated / Custom Shape
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Supplier: CoorsTek
Description: alumina: increased strength and impact resistance SILICON CARBIDES Silicon carbides offer superior wear at high temperatures, yielding a long life in the most abrasive environments. CoorsTek can manufacture intricate and large shaped designs to meet your specifications. CoorsTek
- Thickness / Wall Thickness: 2 inch
- Length: 9 inch
- Diameter: 4 inch
- Density: 3.1 to 4.01 g/cc
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Description: Ceramic substrates have following advantages: High thermal conductivity Excellent insulation properties High mechanical strength Excellent chemical stability Aluminum nitride ceramic substrates: Thermal conductivity > 200 W/m·K, thermal expansion coefficient matches that of silicon.
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Supplier: CoorsTek
Description: alumina: increased strength and impact resistance SILICON CARBIDES Silicon carbides offer superior wear at high temperatures, yielding a long life in the most abrasive environments. CoorsTek can manufacture intricate and large shaped designs to meet your specifications. CoorsTek
- Thickness: 0.125 to 2 inch
- Function: Abrasion / Sliding Wear, Corrosion
- Industry / Application: Cement / Concrete, Chemical Process, Crushers & Grinding Mills, Mining, Pipes / Piping, Power Generation, Pulp & Paper, Steel / Metal Mills
- Liner Materials: Ceramic
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Supplier: Richardson RFPD
Description: The MASW-011029 is a W-Band SP3T Switch manufactured using MACOM’s patented AlGaAs PIN Diode MMIC process, on a semi-insulating GaAs substrate. The device is fully passivated with silicon nitride and has an additional layer of BCB for scratch protection. This protective coating
- Frequency Range: 75,000 to 100,000 MHz
- Insertion Loss: 1.3 dB
- Isolation (Port to Port): 33 dB
- Switching Speed: 0.000002 ms
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Supplier: ASTM International
Description: applications (catalytic conversion supports (1), high temperature filters (2, 3), combustion burner plates (4), energy absorption and damping (5), etc.). The honeycomb ceramics can be made in a range of ceramic compositionsalumina, cordierite, zirconia, spinel, mullite, silicon
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Supplier: Plansee SE
Description: Our targets and cathodes made from titanium-aluminum (TiAl) ensure that drills, milling machines, indexable cutting inserts and other tools are protected by a hard, oxidation-resistant nitride coating (TiAlN). High feed speeds, excellent cutting performance and impressive metal removal rates:
- Type: Sputtering Target
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Product Overview Silicon nitride ceramic porous tooling blocks are precision ceramic components manufactured from advanced silicon nitride (Si?N?) materials with controlled porous structures. They provide excellent thermal shock resistance (read more)
Browse Silicon Nitride and Silicon Nitride Ceramics Datasheets for Shenzhen Great Precision Ceramic CO., LTD. -
Product Overview Used in semiconductor processing chambers and high-temperature industrial equipment where mechanical strength must be retained above 1000 C. Fountyl silicon nitride (Si3N4) ceramic parts are sintered to full density with flexural strength exceeding 800 (read more)
Browse Silicon Nitride and Silicon Nitride Ceramics Datasheets for Fountyl Technologies Pte. Ltd. -
wafer carrier, is called pocket wafer in English. It is widely used in CVD and vacuum sputtering of semiconductors. We can provide customers with customized wafer carriers of silicon and silicon carbide materials to meet customers' different application needs. It can provide bearing plates (read more)
Browse Silicon Carbide and Silicon Carbide Ceramics Datasheets for 3X Ceramic Parts Company Limited -
-power LEDs, and advanced heat dissipation components. Features • High thermal conductivity (170~230W/m.K), up to 9.5 times than alumina; • Thermal expansion coefficient close to silicon wafer, achieve high reliability of Silicon chip and thermal (read more)
Browse Ceramic Sheets and Boards Datasheets for Xiamen Innovacera Advanced Materials Co., Ltd. -
washers, BN insulators, BN insulation plates, BN flanges and other boron nitride ceramic insulator parts subjected to high thermal shock to meet customers’ specific requirements in the high temperature furnaces industry (read more)
Browse Industrial Ceramic Materials Datasheets for Xiamen Innovacera Advanced Materials Co., Ltd. -
. Different ceramic materials bring unique advantages for specific applications: Silicon Nitride (read more)
Browse Industrial Ceramic Materials Datasheets for Fountyl Technologies Pte. Ltd. -
Low thermal expansion coefficient, which is similar to that of silicon Excellent plasma resistance Excellent resistance to thermal shock Silicon Nitride Substrate The remarkable mechanical, thermal, and electrical properties of (read more)
Browse Industrial Ceramic Materials Datasheets for Xiamen Unipretec Ceramic Technology Co., Ltd. -
: Ceramic Substrate Materials Zirconia reinforced aluminum nitride composite ceramics balance thermal conductivity and mechanical strength. An effective compromise between aluminum nitride and silicon nitride, providing a reliable substrate material (read more)
Browse Industrial Ceramic Materials Datasheets for Suntech Applied Materials (Hefei) Co.,Ltd -
N), zirconia (ZrO?), and silicon nitride (Si?N?). These metallized surfaces grant ceramics welding capability, electrical connectivity, vacuum compatibility, mechanical strength, and thermal robustness—ideal for feedthroughs, vacuum electronic packaging, and high?reliability metallized (read more)
Browse Industrial Ceramic Materials Datasheets for Shenzhen Great Precision Ceramic CO., LTD. -
aluminum nitride, boron carbide, silicon nitride, and zirconia, to (read more)
Browse Ceramic Fabrication Services Datasheets for Insaco, Inc.
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AMB AlN Ceramic Substrate
Aluminum nitride (AlN) ceramics as a high thermal conductivity, thermal expansion coefficient close to silicon semiconductor material, has good insulation and mechanical properties, aluminum nitride copper clad plate has very high thermal conductivity in thermal characteristics, heat dissipation
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Replacing Metal Components with Hard Materials (PDF)
Many times we are asked at Insaco if we could machine a thin metal rod, or drill a small metal plate, often requiring extremely tight tolerances and precision cuts. Unfortunately we don't machine metal or plastic materials. We specialize in hard materials such as sapphire, ceramic, aluminum nitride
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Indicates content that may require registration and/or purchase.
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Thermoelastic vibration analysis of Mems/Nems plate resonators with voids
The numerical computations have been carried out with the help of MATLAB software programming in silicon nitride plates with voids for two different sets of voids.
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C-Crack Initiation in Quasi-Static and Impact Loading of a Bearing-Grade Silicon Nitride
This paper describes the results of an experimental study of the critical loads ͑P¯ c͒ for C-crack initiation in ball-on-plate loading using silicon nitride plates and tungsten carbide balls.
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Theoretical Model of Impact Damage in Structural Ceramics
The predicted ring cracks on the contact surface, as well as the cone cracks, median cracks, radial cracks, lateral cracks, and damage‐induced porous zones in the interior of hot‐pressed silicon nitride plates , matched those observed experimentally.
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Thermal/chemical degradation of ceramic cross-flow filter materials
and Back-Scattering Electron MicroEraphs of the Cordierite- Silicon Nitride Plate Surface .............,................................
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PECVD low stress silicon nitride analysis and optimization for the fabrication of CMUT devices
…a silicon wafer, using a standard surface micromachining pro- cess, using mainly PECVD silicon nitride and finally, once the CMUT is realized, the bulk silicon wafer is completely removed by a chemical etching process, allowing the silicon nitride plates to freely vibrate.
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An equivalent circuit model for transmitting capacitive micromachined ultrasonic transducers in collapse mode
The dimensions of the silicon nitride plate : a = 25 μm, tm = 1.5 μm, ti = 0.4 μm, and tg = 0.2 μm.
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Nonlinear thermomechanical design of microfabricated thin plate devices in the post-buckling regime
Simulated maximum (tensile) and minimum (compressive) principal stress evolutions in the silicon nitride plate (h = 100 nm) with increasing sidelength. . where gmn(x, y) = sin (2m + 1)π x a − (−1)m sin π . x a .
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Fast two‐dimensional grid and transmission X‐ray microscopy scanning methods for visualizing and characterizing protein crystals
PepTSt (peptide transporter from Strep- tococcus thermophilus) was crystallized by the in meso method using either 50 nl (IMISX plate; Fig. 3) or 150 nl ( silicon nitride plate ; Fig. 2b) of mesophase and 1000 nl of precipitant solution (Huang et al., 2015).
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Contrast-enhanced photothermal imaging for the evaluation of thermal transport parameters of liquids
The strength of thermoelastic vibration is small due to the low linear ther- mal expansion coefficient of the silicon nitride plate , which is the optical absorber.
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Ceramic Materials and Components for Engines
Values of f 2 calculated from stable crack growth in non-tapered and tapered silicon nitride plates using Eq. 2.