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Supplier: Quantum Devices, Inc.
Description: Quantum Devices offers the ability to customize a planar silicon photodiode with either single or multiple diode structures on a single chip. This configuration is a p-on-n structure and can be used to detect the presence and absence of minute quantities of light. The linearity of this
- PN, PIN, or Avalanche: PN Photodiode
- Photodiode Material: Silicon
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Supplier: First Sensor AG
Description: These avalanche photodiodes were developed specifically for LIDAR applications and laser rangefinders. The series of products contains linear and matrix arrays with multiple sensors on one monolithic die, e.g. 8, 16, 64 pixels. Special features Fast rise time in 900 nm
- Active Area Diameter or Length: 4 mm
- Array: Yes
- Dark Current: 7 to 75 nA
- PN, PIN, or Avalanche: Avalanche Photodiode
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Supplier: Hamamatsu Photonics
Description: Surface mountable 16-element photodiode array The S8558 is a 16-element Si PIN photodiode array in a ceramic chip carrier package suitable for surface mount using solder reflow techniques. The S8558 can be used in a wide range of applications including spectrophotometer
- Array: Yes
- Dark Current: 1 nA
- PN, PIN, or Avalanche: PIN Photodiode
- Photodiode Material: Silicon
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Supplier: Hamamatsu Photonics
Description: 6-element array for encoders The S14833 is a surface mount type 6-element Si PIN photodiode array. Each of the six element is separated, and their arrangement is suitable for encoders.
- Array: Yes
- Dark Current: 5 nA
- PN, PIN, or Avalanche: PIN Photodiode
- Photodiode Material: Silicon
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Supplier: Hamamatsu Photonics
Description: Surface mountable 16-element array The S15158 is a 16-element Si PIN photodiode array in surface mountable chip carrier package. It can be mounted using solder re?ow and used in a wide variety of applications such as spectrophotometers and distance measurement.
- Array: Yes
- Dark Current: 10 nA
- PN, PIN, or Avalanche: PIN Photodiode
- Photodiode Material: Silicon
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Supplier: OSI Optoelectronics
Description: This series consists of 16- element arrays: the individual elements are grouped together and mounted on PCB. For X-Ray or Gamma-ray application, these multi-channel detectors offer scintillator-mountin g options: BGO, CdWO4 or CsI(TI). BGO (Bismuth Germinate) acts as an ideal absorber: it
- Active Area Diameter or Length: 1.18 mm
- Active Area Height: 2 mm
- Array: Yes
- Dark Current: 5 nA
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Supplier: OSI Optoelectronics
Description: This series consists of 16- element arrays: the individual elements are grouped together and mounted on PCB. For X-Ray or Gamma-ray application, these multi-channel detectors offer scintillator-mountin g options: BGO, CdWO4 or CsI(TI). BGO (Bismuth Germinate) acts as an ideal absorber: it
- Active Area Diameter or Length: 2.08 mm
- Active Area Height: 2.54 mm
- Array: Yes
- Dark Current: 10 nA
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Supplier: First Sensor AG
Description: These avalanche photodiodes were developed specifically for the laser radar system LIDAR and laser rangefinders. The series provides fundamental technology for the development of arrays with multiple individual sensors, e.g. 8, 16, 32 pixels. Features: Fast rise time
- Active Area Diameter or Length: 1 mm
- Array: Yes
- Dark Current: 2 to 10 nA
- PN, PIN, or Avalanche: Avalanche Photodiode
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Supplier: Hamamatsu Photonics
Description: BBack-illuminated photodiode array for X-ray non-destructive inspection (element pitch: 2.5 mm) The is a back-illuminated type 16-element photodiode array specifically designed for non-destructive X-ray inspection. The back-illuminated photodiode array is
- Array: Yes
- Dark Current: 0.0500 nA
- Photodiode Material: Silicon
- Rise Time: 6500 ns
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Supplier: OSI Optoelectronics
Description: QD7-0-SD or QD50-0-SD are quadrant photodiode arrays with associated circuitry to provide two difference signals and a sum signal. The two difference signals are voltage analogs of the relative intensity difference of the light sensed by opposing pairs of the photodiode quadrant
- Active Area Diameter or Length: 8 mm
- Dark Current: 15 nA
- Operating Temperature: -40 to 100 C
- PN, PIN, or Avalanche: PIN Photodiode
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Supplier: OSI Optoelectronics
Description: Multichannel array photodetectors consist of a number of single element photodiodes laid adjacent to each other forming a one-dimensional sensing area common cathode substrate. They can perform simultaneous measurements of a moving beam or beams of many wavelengths. They feature low
- Active Area Diameter or Length: 4.39 mm
- Active Area Height: 0.8900 mm
- Array: Yes
- Noise Equivalent Power (NEP): 4.80E-15 W/Hz½
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Supplier: First Sensor AG
Description: These avalanche photodiodes were developed specifically for the laser radar system LIDAR and laser rangefinders. The series provides fundamental technology for the development of arrays with multiple individual sensors, e.g. 8, 16, 32 pixels. Features: Fast rise time
- Active Area Diameter or Length: 0.2300 mm
- Dark Current: 0.5000 to 1 nA
- PN, PIN, or Avalanche: Avalanche Photodiode
- Photodiode Material: Silicon
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Supplier: First Sensor AG
Description: These avalanche photodiodes were developed specifically for the laser radar system LIDAR and laser rangefinders. The series provides fundamental technology for the development of arrays with multiple individual sensors, e.g. 8, 16, 32 pixels. Features: Fast rise time
- Active Area Diameter or Length: 0.5000 mm
- Dark Current: 0.8000 to 2 nA
- PN, PIN, or Avalanche: Avalanche Photodiode
- Photodiode Material: Silicon
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Supplier: Micropac Industries, Inc.
Description: The 61060 is a Silicon Photodiode in a unique 0.080 diameter coaxial package designed to be mounted in arrays. Fast operating speed makes this device the best option in applications where speed consideration predominate. It is available with a wide angle flat lens or narrow
- Dark Current: 25 nA
- Operating Temperature: -55 to 125 C
- PN, PIN, or Avalanche: PN Photodiode, PIN Photodiode
- PSD: Yes
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Supplier: Photonique SA
Description: UV & blue light solidstate photon detector/counter; 2mm sensor pitch
- Active Area Diameter or Length: 1 mm
- Active Area Height: 1 mm
- Array: Yes
- Dark Current: 10000 nA
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Supplier: Photonique SA
Description: Visible light solidstate photon detector/counter; 2mm sensor pitch
- Active Area Diameter or Length: 1 mm
- Active Area Height: 1 mm
- Array: Yes
- Dark Current: 10000 nA
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Supplier: Photonique SA
Description: UV & blue light solidstate photon detector/counter for array assemblies
- Active Area Diameter or Length: 2.1 mm
- Active Area Height: 2.1 mm
- Dark Current: 20000 nA
- Operating Temperature: -50 to 40 C
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Supplier: Photonique SA
Description: Visible light solidstate photon detector/counter for array assemblies
- Active Area Diameter or Length: 2.1 mm
- Active Area Height: 2.1 mm
- Dark Current: 15000 nA
- Operating Temperature: -40 to 40 C
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Supplier: Marktech Optoelectronics
Description: Transistors; Avalanche Photodiodes to InP and InGaAs Pin Photodiodes. Our silicon detectors have a spectral sensitivity range in the 400nm to 1100nm for applications such as optical switching and sensing requiring high speed, consistency and high reliability. Marktech
- Active Area Diameter or Length: 0.1000 mm
- PN, PIN, or Avalanche: PIN Photodiode
- Photodiode Material: Indium Gallium Arsenide
- Photodiode Package / Mounting: Other
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Supplier: RS Components, Ltd.
Description: The 5T series, from Centronic, are a family of silicon photodetectors. They have a high blue sensitivity with high resistance and low dark leakage current. They offer photovoltaic or reverse bias operation modes for a lower capacitance. The 5T photodetectors are ideal for applications with
- Photodiode Material: Silicon
- Photodiode Package / Mounting: Other
- Sensitivity: 0.6500 A/W
- Spectral Response: Visible, IR
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Supplier: ams
Description: The TCS3200 programmable color light-to-frequency converter combines configurable silicon photodiodes and a current-to-frequency converter on a single monolithic CMOS integrated circuit. The output is a square wave (50% duty cycle) with frequency directly proportional to light
- Color Types Detected: RGB (Visible)
- Operating Temperature: -40 to 158 F
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Supplier: Newport MKS
Description: data with an integrated high-sensitivity Silicon photodiode linear array & exit-port photodiode. Elevate your instruments with precise, efficient measurements of 340, 380, 405, 450, 505, 546, 578, 630, 670, & 700 nm wavelengths.
- Spectral / Wavelength Range: 340 to 700 nm
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Supplier: Renesas Electronics Corporation
Description: The ISL29112 is a low cost, light-to-voltage silicon optical sensor combining a photodiode array, a non-linear current amplifier, and a micropower op amp on a single monolithic IC. Similar to the human eye, the photodiode array has peak sensitivity at 550nm and
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Supplier: RS Components, Ltd.
Description: The SFH2240 from OSRAM Opto Semiconductors is a silicon PIN photodiode and has a wavelength of 400 nm to 690 nm. Featuring adapted spectral sensitivity for Human eye Sensitivity and with a low temperature coefficient, the SFH2240 has fast switching time and high linearity. Suitable for
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Supplier: RS Components, Ltd.
Description: The SFH2240 from OSRAM Opto Semiconductors is a silicon PIN photodiode and has a wavelength of 400 nm to 690 nm. Featuring adapted spectral sensitivity for Human eye Sensitivity and with a low temperature coefficient, the SFH2240 has fast switching time and high linearity. Suitable for
- Technology: Photoelectric Sensors
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Hamamatsu Photonics announces the new S16495 silicon photodiode, explicitly engineered for high-sensitivity detection at 310 nm. This latest addition to our extensive line of photonic (read more)
Browse Photodiodes Datasheets for Hamamatsu Photonics -
Hamamatsu Photonics is pleased to introduce the G15978-0020P, an exciting new InGaAs photodiode that redefines the possibilities in compact sensor technology. Designed specifically for researchers, engineers, and industrial applications, this new photodiode is ideally suited for accurate (read more)
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Hamamatsu Photonics introduces its G1719X series of InGaAs PIN Photodiodes for long wavelengths. These compact, surface-mounted NIR sensors with low dark current are designed for infrared applications, including gas sensing, laser applied measurements, and remote temperature sensing (read more)
Browse Photodiodes Datasheets for Hamamatsu Photonics -
Introducing Hamamatsu Photonics' new Si APD S17353 Series sensors, engineered for exceptional sensitivity and minimal noise across a wide wavelength range of up to 800 nm.
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Rapid absolute diffuse spectral reflectance factor measurements using a silicon‐photodiode array
Developmenttivity of the silicon photodiode array in this region.
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Solid-State 1024 Pixel Linear X-Ray Detector
near silicon photodiode array covered by a scintillator detects X -rays having crossed the object being exami- ned.
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Use of silicon self-scanned linear photodiode arrays for the direct display of transmission electron microscope energy loss spectra
1 Integrated Photomatrix Ltd., Grove Trading Estate, Dorchester, Dorset, England, Publications PX 145 and 149 2 FRY, P. W.: ' Silicon photodiode arrays ', /.
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A dielectrically isolated photodiode array by silicon-wafer direct bonding
A typical silicon photodiode array fabrication sequence is illustrated in Fig. 1.
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Guidelines For The Selection Of Raman Multichannel Detectors
- Microchannel plate (MCP) image intensified silicon photodiode arrays , IPDA.
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Computer Electronic Radiography For Early Detection Of Vascular Disease
The x -rays which pass through the patient impinge on this screen which emits light that is focused by a Canon 60 mm f /0.7 lens onto a 1024 element self- scanning silicon photodiode array .
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A compact, discrete CsI(Tl) scintillator/Si photodiode gamma camera for breast cancer imaging
fabricating the advanced silicon photodiode arrays upon which much of my research depended, and to Craig Tindall for his assistance with some of the final photodiode processing steps.
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Digital Radiology With A Slit Scan Detector
- Detection of photons by a silicon photodiode array .
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Assessment Of Silicon Imaging Array Performance
Fry P W, " Silicon Photodiode Arrays ".
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A High Resolution CCD Multiplexer
A mono- lithic silicon photodiode array of 8µm pitch, 3533 elements was designed with the multi- plexer.