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Supplier: OSI Optoelectronics
Description: scintillator, these Si arrays map any medium or high radiation energy over to visible spectrum via scattering effect. Also, their specially designed PCB allows end-to-end connectivity. Multiple arrays can be deployed in situation that calls for larger scale assembly.
- Sensitivity: 0.59 A/W
- Spectral Response Range: 350 to 1,100 nm
- Active Area Diameter or Length: 2.08 mm
- Active Area Height: 2.54 mm
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Supplier: Hamamatsu Photonics Europe
Description: 6-element array for encoders The S14833 is a surface mount type 6-element Si PIN photodiode array. Each of the six element is separated, and their arrangement is suitable for encoders.
- Sensitivity: 0.68 A/W
- Spectral Response Range: 340 to 1,100 nm
- Dark Current: 5 nA
- Array: Array
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Supplier: Quantum Devices, Inc.
Description: Quantum Devices offers the ability to customize a planar silicon photodiode with either single or multiple diode structures on a single chip. This configuration is a p-on-n structure and can be used to detect the presence and absence of minute quantities of light. The linearity of this
- Photodiode Type: PN Photodiode
- Photodiode Material: Silicon
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Supplier: First Sensor AG
Description: These avalanche photodiodes were developed specifically for LIDAR applications and laser rangefinders. The series of products contains linear and matrix arrays with multiple sensors on one monolithic die, e.g. 8, 16, 64 pixels. Special features Fast rise time in 900 nm range Low gain
- Spectral Response Range: 850 to 1,070 nm
- Active Area Diameter or Length: 4 mm
- Rise Time: 5 ns
- Dark Current: 7 to 75 nA
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Supplier: Hamamatsu Photonics Europe
Description: Photodiode array combined with signal processing IC The S11865/S11866 series are Si photodiode arrays combined with a signal processing IC chip. X-ray tolerance has been improved compared to the previous products (S8865/S8866 series). The signal processing IC chip is
- Spectral Response Range: 200 to 1,000 nm
- Array: Array
- Photodiode Material: Silicon
- Photodiode Spectral Response: X-ray
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Supplier: OSI Optoelectronics
Description: Multichannel array photodetectors consist of a number of single element photodiodes laid adjacent to each other forming a one-dimensional sensing area common cathode substrate. They can perform simultaneous measurements of a moving beam or beams of many wavelengths. They feature low
- Sensitivity: 0.6 A/W
- Spectral Response Range: 200 to 1,100 nm
- Active Area Diameter or Length: 1.57 mm
- Active Area Height: 1.22 mm
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Supplier: Hamamatsu Photonics Europe
Description: Dual-element, plastic package photodiode The S4204 is a dual-element Si PIN photodiode molded into plastic packages. Having high sensitivity and low noise, this photodiode has low crosstalk between the elements. Custom devices (with different element shapes, number of elements,
- Sensitivity: 0.65 A/W
- Spectral Response Range: 320 to 1,100 nm
- Dark Current: 1 nA
- Array: Array
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Supplier: First Sensor AG
Description: These avalanche photodiodes were developed specifically for the laser radar system LIDAR and laser rangefinders. The series provides fundamental technology for the development of arrays with multiple individual sensors, e.g. 8, 16, 32 pixels. Features: Fast rise time in 900 nm range
- Spectral Response Range: 750 to 930 nm
- Active Area Diameter or Length: 1 mm
- Rise Time: 2 ns
- Dark Current: 2 nA
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Supplier: PREMA Semiconductor GmbH
Description: Two differential pairs of photodiodes with amplifiers The optical sensor IC PR5401 consists of two pairs of photodiodes placed in opposite quadrants with differential amplifiers. If illuminated uniformly, the output is Vcc/2, but depends on the balance of illumination on each pair.
- Spectral Response Range: 950 nm
- Operating Temperature: -40 to 85 C
- Array: Array
- Photodiode Spectral Response: IR, Visible
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Supplier: First Sensor AG
Description: These avalanche photodiodes were developed specifically for the laser radar system LIDAR and laser rangefinders. The series provides fundamental technology for the development of arrays with multiple individual sensors, e.g. 8, 16, 32 pixels. Features: Fast rise time in 900 nm range
- Spectral Response Range: 750 to 930 nm
- Active Area Diameter or Length: 0.23 mm
- Rise Time: 0.5 ns
- Dark Current: 0.5 to 1 nA
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Supplier: First Sensor AG
Description: These avalanche photodiodes were developed specifically for the laser radar system LIDAR and laser rangefinders. The series provides fundamental technology for the development of arrays with multiple individual sensors, e.g. 8, 16, 32 pixels. Features: Fast rise time in 900 nm range
- Spectral Response Range: 750 to 930 nm
- Photodiode Type: Avalanche Photodiode
- Photodiode Spectral Response: IR
- Features: Other
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Supplier: Photonique SA
Description: No Description Provided
- Spectral Response Range: 410 to 950 nm
- Active Area Diameter or Length: 1 mm
- Active Area Height: 1 mm
- Rise Time: 0.3 ns
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Supplier: Micropac Industries, Inc.
Description: The 61060 is a Silicon Photodiode in a unique 0.080 diameter coaxial package designed to be mounted in arrays. Fast operating speed makes this device the best option in applications where speed consideration predominate. It is available with a wide angle flat lens or narrow
- Sensitivity: 100 A/W
- Spectral Response Range: 290 to 1,200 nm
- Rise Time: 300 ns
- Operating Temperature: -55 to 125 C
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Supplier: Hamamatsu Photonics Europe
Description: Visible/near infrared MPPC MPPC is a type of device called SiPM (silicon photomultipliers). It is a new type of photon counting device that consists of multiple Geiger mode APD (avalanche photodiode) pixels. It is an opto-semiconductor with outstanding photon counting capability and
- CT: 350 pF
- Features: Array, Avalanche Diodes, Other
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Supplier: Marktech Optoelectronics
Description: Avalanche Photodiodes to InP and InGaAs Pin Photodiodes. Our silicon detectors have a spectral sensitivity range in the 400nm to 1100nm for applications such as optical switching and sensing requiring high speed, consistency and high reliability. Marktech manufactured InP Pin
- Active Area Diameter or Length: 1.5 mm
- Photodiode Material: Indium Gallium Arsenide
- Features: Other
- Photodiode Type: PIN Photodiode
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Supplier: ams
Description: The TCS3200 programmable color light-to-frequency converter combines configurable silicon photodiodes and a current-to-frequency converter on a single monolithic CMOS integrated circuit. The output is a square wave (50% duty cycle) with frequency directly proportional to light
- Operating Temperature: -40 to 158 F
- Color Types Detected: RGB (Visible)
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Supplier: ams
Description: The TCS3200 programmable color light-to-frequency converter combines configurable silicon photodiodes and a current-to-frequency converter on a single monolithic CMOS integrated circuit. The output is a square wave (50% duty cycle) with frequency directly proportional to light
- Operating Temperature: -40 to 158 F
- Color Types Detected: RGB (Visible)
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Supplier: Newport MKS
Description: high-sensitivity Silicon photodiode linear array & exit-port photodiode. Elevate your instruments with precise, efficient measurements of 340, 380, 405 436, 480, 510, 546, 580, 630, & 700 nm wavelengths.
- Spectral / Wavelength Range: 340 to 700 nm
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Supplier: Newport MKS
Description: high-sensitivity Silicon photodiode linear array & exit-port photodiode. Elevate your instruments with precise, efficient measurements of 340, 380, 405, 450, 505, 546, 578, 630, 670, & 700 nm wavelengths.
- Spectral / Wavelength Range: 340 to 700 nm
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Supplier: Newport MKS
Description: high-sensitivity Silicon photodiode linear array & exit-port photodiode. Elevate your instruments with precise, efficient measurements of 340, 405, 450, 492, 510, 546, 578, 630, 700, & 800 nm wavelengths.
- Spectral / Wavelength Range: 340 to 800 nm
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Supplier: Newport MKS
Description: high-sensitivity Silicon photodiode linear array. Elevate your instruments with precise, efficient measurements of 340, 405, 450, 505, 546, 578, 620, 670, & 700 nm wavelengths.
- Spectral / Wavelength Range: 340 to 700 nm
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Supplier: Renesas Electronics Corporation
Description: The ISL29102 is a low cost, light-to-voltage silicon optical sensor combining a photodiode array, a nonlinear current amplifier, and a micro-power op amp on a single monolithic IC. Similar to human eyes, the photodiode array has peak sensitivity at 550nm and spans
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Supplier: Renesas Electronics Corporation
Description: The ISL29112 is a low cost, light-to-voltage silicon optical sensor combining a photodiode array, a non-linear current amplifier, and a micropower op amp on a single monolithic IC. Similar to the human eye, the photodiode array has peak sensitivity at 550nm and
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Supplier: Renesas Electronics Corporation
Description: The ISL29006, ISL29007, and ISL29008 are light-to-current silicon optical sensors combining a photodiode array and a current amplifier on a single monolithic IC. The photodiode's spectral sensitivity approximates the human eye response peaking at 550nm with virtually no
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Hamamatsu Photonics announces the new S16495 silicon photodiode, explicitly engineered for high-sensitivity detection at 310 nm. This latest addition to our extensive line of photonic (read more)
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Rapid absolute diffuse spectral reflectance factor measurements using a silicon‐photodiode array
Developmenttivity of the silicon photodiode array in this region.
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Solid-State 1024 Pixel Linear X-Ray Detector
near silicon photodiode array covered by a scintillator detects X -rays having crossed the object being exami- ned.
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Use of silicon self-scanned linear photodiode arrays for the direct display of transmission electron microscope energy loss spectra
1 Integrated Photomatrix Ltd., Grove Trading Estate, Dorchester, Dorset, England, Publications PX 145 and 149 2 FRY, P. W.: ' Silicon photodiode arrays ', /.
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A dielectrically isolated photodiode array by silicon-wafer direct bonding
A typical silicon photodiode array fabrication sequence is illustrated in Fig. 1.
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Guidelines For The Selection Of Raman Multichannel Detectors
- Microchannel plate (MCP) image intensified silicon photodiode arrays , IPDA.
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Computer Electronic Radiography For Early Detection Of Vascular Disease
The x -rays which pass through the patient impinge on this screen which emits light that is focused by a Canon 60 mm f /0.7 lens onto a 1024 element self- scanning silicon photodiode array .
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A compact, discrete CsI(Tl) scintillator/Si photodiode gamma camera for breast cancer imaging
fabricating the advanced silicon photodiode arrays upon which much of my research depended, and to Craig Tindall for his assistance with some of the final photodiode processing steps.
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Digital Radiology With A Slit Scan Detector
- Detection of photons by a silicon photodiode array .
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Assessment Of Silicon Imaging Array Performance
Fry P W, " Silicon Photodiode Arrays ".
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A High Resolution CCD Multiplexer
A mono- lithic silicon photodiode array of 8µm pitch, 3533 elements was designed with the multi- plexer.
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