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Supplier: Daburn Electronics & Cable
Description: : ±0.02%/°C Max. Transient Response recovery time 25% load step change: 250µS Overvoltage Protection: Zener Diode Clamp 3.3 Vdc Output: 3.9 Vdc 5 Vdc Output: 6.2 Vdc 12 Vdc Output: 15 Vdc 15 Vdc Output: 18 Vdc
- DC Input Current: 0.0340 to 2.08 amps
- DC Input Voltage: 24 to 48 volts
- DC Output Current: -1.67 to 8 amps
- DC Output Power: 40 watts
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Supplier: Daburn Electronics & Cable
Description: : Open or 3 V
OFF: Short or 0 V < Vr < 1.2V Negative logic, Option DC-DC ON: Short or 0V < Vr < 1.2V DC-DC OFF: Open or 3V - DC Input Current: 0.0280 to 1.6 amps
- DC Input Voltage: 24 to 48 volts
- DC Output Current: -1.25 to 6 amps
- DC Output Power: 30 watts
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Supplier: Daburn Electronics & Cable
Description: HZ Bandwidth): 50 - 75 mVp-p Temperature Coefficient: ±0.02%/°C Max. Transient Response recovery time 25% load step change: 250µS Over voltage protection 3.3 Vdc Output: 3.9 Vdc Zener diode clamp 5
- DC Input Current: 0.0200 to 1.04 amps
- DC Input Voltage: 24 to 48 volts
- DC Output Current: -2 to 5.5 amps
- DC Output Power: 20 watts
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Supplier: Daburn Electronics & Cable
Description: With overload and short circuit protection, our 15 watt single and dual output DC-DC converter features internal input fuse and reverse polarity protection, a reliable snap-on for DIN Rail TS-35/7.5 or TS-35/15 and overload and short circuit protection. This design also has an internal
- DC Input Current: 0.0200 to 0.7730 amps
- DC Input Voltage: 24 to 48 volts
- DC Output Current: -1.5 to 4.5 amps
- DC Output Power: 15 watts
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Advanced Semiconducting Materials and Devices
Snap - Off (or Step Recovery ) Diodes (SRD) . . . . .
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Handbook of Ultra-Wideband Short-Range Sensing
… Ultra-Wideband Sensor Electronics 199 Introduction 199 Determination of the System Behaviour by Pulse Excitation 201 Basic Principle 201 Pulse Sources 203 Monolithically Integrated Pulse Sources 203 Tunnel Diode 204 Avalanche Transistor 204 Step Recovery Diode ( Snap - Off Diode) 206 Non-Linear …
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Ultra-low-noise traveling-wave-tube gun with two beam-forming electrodes
Practical devices having characteristics approximating those of Fig. 1 are charge storage diodes (also referred to as step re- covery or snap - off diodes ) as exemplified by steeply graded junction' and PINS types.
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Harmonic generation with a capacitor exhibiting an abrupt capacitance change
Practical devices having characteristics approximating those of Fig. 1 are charge storage diodes (also referred to as step re- covery or snap - off diodes ) as exemplified by steeply graded junction' and PINS types.
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RF measurements I: signal receiving techniques
The sampling pulse is often generated by step - recovery diodes ( snap - off diodes) which change their conductivity very rapidly between the conducting and non-conducting state.
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Semiconductor microwave generators
This snap - off or step - recovery diode may be considered as a switch between two impedances.
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Switching high-voltage pulses with subnanosecond fronts by an open-discharge pulse shaper
In recent years, progress in this field has been achieved predominantly due to the development of new solid state switches such as semiconductor step recovery ( snap off or charge storage) diodes [2, 3].
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EMI issues in UWB systems
Step Recovery Diode Pulse Generators: Step Recovery Diodes (SRD) or " snap off " diodes can be used to make very fast-rise time pulses.