List of Tables

Chapter 1: Nanolithography

Table 1.1: Comparison of primary nanolithography techniques. Note that all numbers quoted are approximate and highly configuration/application dependent
Table 1.2: FIB fabrication times in Si. Calculated approximate fabrication times for arrays of deposited or sputtered features assuming a deposition/sputtering rate of 0.5 ?m ³ per nA-sec of ion current. Those times shown in bold face are in excess of the maximum fabrication time for total drift distances of D/3 assuming the best measured drift rate of 1.5 nm/sec.

Table 6.1: Selected characteristics of single wall carbon nanotubes (ranges indicate the spread of commonly reported values)
Table 6.2: Characterization techniques commonly applied to carbon nanotubes

Table 9.1: Transistor scaling assuming long channel device operation
Table 9.2: Key technology requirements for high-performance logic circuits, based on the ITRS2002 roadmap ²
Table 9.3: Estimated parameters for the emerging technologies of Figure 9.28 ³⁷

Table 12.1: Inputs and output for classical exclusive OR (XOR)
Table 12.2: Inputs and output for the quantum exclusive OR (XOR)
Table 12.3: Character of the eigenstates of the two-qubit system with the Heisenberg Hamiltonian

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