Integrated-circuit (IC) technology has undergone unmatched progress, truly improving peoples' lives. In a way, this is illustrated by the names given to describe different levels of integration: small-scale integration (SSI), medium-scale integration (MSI), large-scale integration (LSI), very large-scale integration (VLSI), and ultralarge-scale integration (ULSI). Although each of these phases appears as an individual era in economic terms, remarkably the device and technology principles have not changed. The principles of modern MOSFETs are essentially the same, although critically important features have been added to enable the aggressive dimension down-scaling. The first section of this chapter describes the deep submicron MOSFET, concluding with a consideration of the current issues and trends. The second section is devoted to memory devices, which are specific in terms of device principles, but otherwise have been a standard part and application driver for IC technology development since the very beginning. Finally, the third and fourth sections introduce silicon-on-insulator (SOI) and BiCMOS as advanced technologies likely to foster further progress in IC technology.