GaN Systems has added a 50 W wireless power amplifier - a small size, low cost, and high efficiency evaluation board ideal for wireless power transfer and charging applications – to its family of wireless power transfer products. It is targeted for lower power applications in industrial and consumer markets for items such as power tools, IoT devices, handheld terminals, medical dev... (read more)

Power Integrations' SIC1182K is a single channel gate driver in an eSOP-R16B package for SiC MOSFETs. Reinforced galvanic isolation is provided by Power Integrations’ revolutionary solid insulator FluxLink technology. The SIC1182K boasts the highest peak-output gate current available without an external boost stage. Devices can be configured to support different gate-drive voltage... (read more)

GaN Systems' GS-065-0xx-1-L devices - available as 3.5A, 8A and 11A devices - are ideal for low power applications, including charging, power supplies, lighting and appliances. They feature:

• Industry standard 5 mm x 6 mm PDFN packages
• Assembly using standard SMT process
• Scalable: 3.5 A to 11 A in the same footprint
• Fast, clean switching spee...

The 6.6kW Bi-directional OBC targets high-efficiency, high-power-density, onboard charger applications. The high voltage rating of Wolfspeed SiC MOSFETs allow the DC bus voltage to vary according to the battery voltage to achieve optimal efficiency.

Wolfspeed SiC MOSFETs in new low-inductance packaging can cut switching losses and simplify designs as seen here. The 6.6kW OBC featu... (read more)

1700V Schottky Diode Joins Family of 1700V MOSFETs Optimized For High Voltage, High Power Environments
Wolfspeed, A Cree Company, introduced the 5^th generation (C5D) 1700V SiC Schottky diode, which is optimized for renewable energy, industrial power and electric vehicle charging applications including solar power and wind turbine inverters, off-board chargers and uninterr... (read more)

The GaN Systems GS-010-120-1-P is an enhancement mode GaN-on-Silicon power transistor available from Richardson RFPD. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems implements patented Island Technology^® cell layout for high-current die performance & yield. GaNPX^® packaging enables lo... (read more)

Maxwell Technologies’ 3V 3400F ultracapacitor cell from Richardson RFPD is designed to support the latest trends in renewable energy, industrial electrification and transportation. Designed from the ground up, Maxwell developed the 3V 3400F cell to be the highest energy, highest power workhorse of its ultracapacitor portfolio. Whether used alone, integrated into a module assembly,... (read more)

Wolfspeed’s 1700V SiC discrete MOSFET C2M0045170P in optimized packing offers wide creepage and clearance distance between drain and source (~8mm) thereby providing extra electrical isolation suitable for high pollution environments. The package includes a separate kelvin source pin which reduces the source inductance found in traditional TO-247-3 packages and can reduce the switch... (read more)

Richardson RFPD is featuring Wolfspeed's C4D family of 1200V SiC Schottky diodes in a TO-247-2 (two-lead) type package.

The increased spacing between the two leads provides more than twice the creepage and clearance distance compared to standard TO-247-3 and TO-220-2 packages.

The C4D10120H, C4D15120H, and C4D20120H products are rated for 10A, 15A and 20A, respectively, and... (read more)

Wolfspeed's E-Series SiC Schottky diodes from Richardson RFPD are enhanced for extreme environments. Starting with the E4D20120A, this family of diodes is specifically designed to be robust and reliable in the harshest environments. As a result, the E-Series diodes are the industry’s first 1200V SiC diodes to be automotive qualified and high-humidity/highvoltage/high-tempera... (read more)

Wakefield-Vette heat pipes have proven to be robust and reliable over many years in the harsh environments such as telecommunications, aerospace, transportation, computers and datacenters. Many thermal systems benefit from the addition of heat pipes, especially when heat sources are dense and/or remote to the final heat exchanger. Choose from Richardson RFPD's stocked offering below for... (read more)

Microsemi's MSCSICSP3/REF2 reference design from Richardson RFPD provides an example of a highly isolated SiC MOSFET dual-gate driver for the SiC SP3 phase leg modules. It can be configured by switches to drive in a half bridge configuration with only side on at any time and with dead time protection. It can also be configured to provide concurrent drive, if necessary. This design is int... (read more)

Vincotech 10-EZ066PA050SA-L855F38T

• Breakdown Voltage: 600V
• Nominal Chip Current Rating: 50A
• Trenchstop™ IGBT3 technology
• Standard industrial housing
• Optimized R_th(j-s)with Phase Change Material
• Built-in NTC
• Equivalent: IFX FS50R06W1E3_B11

Product details

... (read more)

Microsemi Low Inductance SP6LI Driver Reference Design from Richardson RFPD

• Featuring brand new SP6LI (Low Inductance) SiC Module
• Stray inductance < 3 nH to fully benefit from SiC
• Designed to be easy to parallel
• Up to 1200 V and 586 A
• Half Bridge Driver
• Up to 400 kHz switching frequency
• ...

Microsemi’s SP6LI extremely low inductance silicon carbide (SiC) MOSFET power modules from Richardson RFPD feature phase leg topology ranking from 1200 volts (V), 210 amperes (A) to 586 A at a case temperature (Tc) of 80 degrees Celsius to 1700 V, 207 A at Tc of 80 degrees Celsius. Offering higher power density and a compact form factor, the new package enables lower quantity of mo... (read more)

Part number: C2M0080170P

Wolfspeed extends its leadership in SiC technology by introducing two 1700V SiC discrete MOSFETs in optimized packing with wide creepage and clearance distance between drain and source (~8mm) thereby providing extra electrical isolation suitable for high pollution environments.

The package includes a separate kelvin source pin which reduces the sour... (read more)

Wolfspeed's CRD-15DD17P - Wide Input Voltage Rage (300VDC - 1200VDC) 15W Flyback Auxiliary Power Supply Board from Richardson RFPD

• Demonstration of the efficient operation of Cree's 1700 V, 1Ω SiC MOSFET with an availability of high blocking voltage and high creepage distance (~7mm)
• Cree's 15 W flyback auxiliary power supply board can accept a wide rang...

Advanced Thermal Solutions IGBT cold plates from Richardson RFPD have unmatched thermal performance because of their mini-channel fin design. The ATS-CP family of cold plates, at a flow rate of 4 L/min, can transfer 1kW of heat between 5.0°C – 7.0°C temperature difference between the cold plate base and inlet fluid temperature, depending on the cold plate model. If the cool... (read more)

GaN Systems 300W, 6.78 MHz Class EF2 Power Amplifier For Wireless Power Transfer available from Richardson RFPD.

The GSWP300W-EVBPA evaluation board is designed to support and expedite the innovation of wireless power transfer systems. The evaluation board uses our GS66508B E-HEMTs in a 300W 6.78MHz class EF2 power amplifier. With select component changes, the evaluation board can... (read more)

GaN Systems 100W, 6.78 MHz Class EF2 Power Amplifier For Wireless Power Transfer available from Richardson RFPD.

The GSWP100W-EVBPA evaluation board is designed to support and expedite the innovation of wireless power transfer systems. The evaluation board uses our GS61008P E-HEMTs in a 100W 6.78MHz class EF2 power amplifier.

Target applications include the wireless chargin... (read more)

Hot and humid environments present a variety of system engineering challenges: These conditions often limit lifespans and cause premature failure in competitor products, leading to higher numbers of field replacements and higher maintenance costs.
Maxwell’s XP™ Series from Richardson RFPD overcomes these common industry challenges and comprises ultracapacitor cells de... (read more)

CRD-02AD09N: 2.2 KW, High Efficiency (80+ Titanium) Bridgeless Totem-Pole PFC with Wolfspeed’s (C3M^TM) SiC MOSFET (TO-263-7) available from Richardson RFPD

• Highly efficient and low cost solution of bridgeless totem-pole PFC topology based on Wolfspeed’s (C3M^TM) 900 V SiC MOSFET (C3M0065090J) in a TO-263-7 Package
• Comfortably...

Wolfspeed KIT8020-CRD-5FF0917P-2: Evaluation Board for Cree’s (C3M^TM) Silicon Carbide MOSFET in a TO-247-4 Package (read more)

EVALUATION BOARD: GS61008P-EVBHF

100V, GaN E-HEMT Buck Converter with High Frequency GaN Driver

The GS61008P-EVBHF facilitates the evaluation of GaN Systems' GaN E-HEMT in a high-performance DC/DC synchronous buck environment. (read more)

The first product in Microsemi's next-gen 1200 V SiC MOSFETs, the 40 mOhm MSC040SMA120B features high avalanche rating, a high short circuit withstand rating for robust operation, and ruggedness for industrial, automotive and commercial aviation power applications.

Features

• Low capacitances and low gate charge
• Fast switching speed due to low int...

The Half-Bridge Gate-Drive Power Supply Reference Design (RD) consists of a half-bridge suitable for voltages up to 1kV and a fully-isolated driver stage with isolated power supplies for the low-side and the high-side switching transistors. It is suitable for single gate/drive supply voltages as low as +4V as well as dual gate drive supply voltages as high as +20V / -5V (30V max) with no... (read more)

Tamura’s 2DM series integrates a dedicated DC-DC converter and a gate drive circuit. The series corresponds to various power modules by adding an external gate resistor of your choice. Features include: fast response (100ns typical), low common mode noise (parasitic capacitance: 15pF typical) and over current protection by DESAT detection.

Features:

• ALL-IN-ONE... (read more)

Click here to request samples from Richardson RFPD for Power Integrations' SCALE-iDriver™ Family of gate driver ICs. These single-channel IGBT and MOSFET drivers come in a standard eSOP package. Reinforced galvanic isolation is delivered using Power Integrations’ innovative solid insulator FluxLink™ technology. Output drive current up to 8 A (peak) enables the product t... (read more)

GaN Systems' Insulated Metal Substrate (IMS) Evaluation Platform provides a flexible, low cost, high power development platform for high-efficiency power systems with 3kW or higher applications. The IMS Evaluation Platform, in combination with GaNPX® packaging technology and smart design techniques, enables power engineers to quickly take full advantage of GaN power transistors in de... (read more)

What’s the fastest way to experience a Class -D Audio Amplifier with a better listening experience? The new GS61004B-EVBCD Evaluation Platform from Richardson RFPD.

The key to unlocking the potential of the Class D amplifier is an ultra-fast switching transistor. GaN Systems’ Gallium Nitride E-HEMTs switch at 10x the speed of a Silicon transistor. This translates to su... (read more)

The MLP’s high-energy storage and box-shape make it perfect for voltage holdup or filtering in military SEM-E modules, telecom circuit packs and computer cards. Cornell Dubilier's MLP series deliver up to 20 joules of energy storage in a 1/2” height with 50 year’s life at +45 ºC. You can readily heatsink it to double the ripple-current capability. The MLP is the sq... (read more)

C2M00451700D SiC MOSFET is designed to support 1500V bus applications in topologies such as boost converters and auxiliary power supplies. Optimized for high-frequency power electronics applications, including renewable-energy inverters, battery charging systems, and three-phase industrial power supplies, the new 1700-V platform enables smaller and higher-efficiency next-generation power... (read more)

Peregrine's UltraCMOS® PE29102 high-speed FETdriver brings the industry's fastest switching speeds to Gallium Nitride (GaN) Class-D audio. With a switching frequency up to 40 MHz, the PE29102 delivers the industry's fastest switching speeds, empowering design engineers to extract the full performance and switching speed advantages from GaN transistors. In class-D audio amplifiers, th... (read more)

The PE29102 is an integrated high-speed driver designed to control the gates of external power devices, such as enhancement mode gallium nitride (eGaN^®) FETs. The outputs of the PE29102 are capable of providing switching transition speeds in the sub-nanosecond range for switching applications up to 40 MHz. The PE29102 is optimized for matched dead time and offers best-in-c... (read more)

The BMOD0189P051B2A 51 V module is based on Maxwell’s leading 48 V module platform and includes the benefits of DuraBlue™ Advanced Shock and Vibration Technology, which combines Maxwell’s unique and patented dry electrode formulation and manufacturing process with a robust proprietary cell structure, resulting in a cell that meets or exceeds some of the most demanding s... (read more)

Epcos CeraLink^TM capacitors are a highly compact solution for the snubber and DC links of fast switching converters based on SiC and GaN semiconductors. These new capacitors are based on a PLZT ceramic material (lead lanthanum zirconate titanate). In contrast to conventional ceramic capacitors, CeraLink capacitors have their maximum capacitance at the application voltage, and... (read more)

Analog Devices introduced its ADuM4120 and ADuM4121 small form factor isolated gate drivers designed for the higher switching speeds and system size constraints required by power switch technologies such as SiC (Silicon Carbide) and GaN (Gallium Nitride), while still providing reliable control over switching characteristics for IGBT (insulated gate bipolar transistor) and MOSFET (metal o... (read more)

Liquid cooling is typically used in applications where desired performance can no longer be economically met by air cooling due to thermal and/or footprint requirements. There are many ways to accomplish liquid cooling, but the most common method is to have a plate with a flow path that moves liquid under the device that is dissipating heat. After the heat is absorbed into the liquid, it... (read more)

Wakefield-Vette's extruded heat sinks from Richardson RFPD provide a greater range of natural convection soutions for higher power components and systems. Complex fin structures can be created by forcing raw aluminum through an extrusion die. These complex fin profiles allow greater heat dissipation through increased surface area while eliminating the cost and time associated with machin... (read more)

Peregrine's PE22100 from Richardson RFPD is a push-pull driver for small transformers in isolated power supply applications. The new device drives the primary of a center-tapped transformer from a 3.0 V or 5 V supply to deliver an isolated power supply.

The driver consists of an on-chip oscillator with frequency set by an external capacitor. The oscillator output is divided-by-two... (read more)

VINcoPACK E3: New Sixpack Packaged to Meet your Mid-Power Need

What about a new sixpack in low-profile package for motion control and UPS applications?
Vincotech's VINcoPACK E3 modules from Richardson RFPD are a low-profile package for mid-power inverters with sixpack configuration. These 1200 V power modules raise the performance bar with their superior efficiency an... (read more)

The SID1183K, an addition to Power Integrations’ SCALE-iDriver^TM family of galvanically isolated single-channel gate driver ICs and available from Richardson RFPD, supports IGBT blocking voltages up to 1700V and delivers a gate current up to 8A. The 8A peak output drive current enables the product to drive devices up to 600A without requiring any additional active compon... (read more)

Analog Devices, Inc. (ADI) EVAL-ADuM4121EBZ

The EVAL-ADuM4121EBZ evaluation board supports the ADuM4121 single-channel gate drivers with an integrated miller clamp. Analog Devices, Inc., iCoupler® technology provides isolation between the input signal and the output gate driver.

The ADuM4121 provides operation with voltages of up to 35 V. The integrated miller clamp act... (read more)

Microsemi’s APT40SM120B in stock at Richardson RFPD is a 1200V, 40A, 80mΩ silicon carbide MOSFET offering fast switching with low EMI/RFI and low R_DS(on) temperature coefficient for improved efficiency. Also available in a D3PAK package (APT40SM120S), the TO-247 package APT40SM120B also features low switching energy and low gate charge and is short circuit withstan... (read more)

General Purpose Base Board for SCALE-iDriver^TM SID1182K with Booster Stage

Features

• Suitable for IGBT power modules in various housings
• Basic Active Clamping
• Short-circuit detection with Advanced Soft Shut Down (ASSD)
• External booster stage
• Electrical command inputs and status outputs<.../li>

General Purpose Base Board for SCALE-iDriver^TM SID1182K

Features

• Suitable for IGBT power modules in various housings
• Short-circuit detection with Advanced Soft Shut Down (ASSD)
• Electrical command inputs and status outputs
• 0V/5V command input logic
• 0V/5V status output logic
• Minimum puls...

CRD-20DD09P-2: 20kW Full Bridge Resonant LLC Converter for 1000V, 65 mΩ SiC MOSFETs in a 4L-TO247 package

> Evaluate converter level efficiency and power density gains when using the new 1000 V, 65 mΩ SiC MOSFETs in a 4L-TO247 package in a full bridge resonant LLC circuit
> Check waveforms such as Vgs and Vds and Id for ringing
> Evaluate thermal p... (read more)

The new flowPACK 1 SiC is faster than 1200 V SiC MOSFETs, safer than 650 V MOSFETs and perfect for charging stations that require soft-switching for LLC topology. This 3xhalf-bridge achieves the efficiency you need at nominal and at partial loads. And its increased switching frequency and power density help to reduce your overall system costs.

Main Benefits

...

High efficiency bridgeless totem pole PFC reference design using GaN E-HEMT

This reference design demonstrates the operating principle and design considerations of Bridgeless Totem Pole PFC (BTPPFC) using GaN enhancement mode HEMT (E-HEMT). A 3-kW BTP-PFC design example using GaN Systems 650-V GaN E-HEMT using the GS66516T EVBDB.

Features

...

The world’s only hermetic aluminum electrolytic capacitor with glass-to-metal seal. Type MLSH has extraordinary long life and rugged construction for the most demanding power
electronics applications.

Type MLSH has superior capacitance retention compared to axial wet tantalum capacitors at -55 °C. Packaged in a robust stainless steel case capable of withstanding 80g... (read more)

MSCSICMDD/REF1 Microsemi

Silicon Carbide Test/Evaluation Products (read more)

C3M0075120K Wolfspeed, A Cree Company

Silicon Carbide Power Transistors/Modules (read more)

The Microsemi APT70SM70J is a 700V, 43A, 75mOhm silicon carbide n-channel power MOSFET module in a SOT-227/ISOTOP package. Silicon carbide (SiC) power MOSFET product line from Microsemi increase your performance over silicon MOSFET and silicon IGBT solutions while lowering your total cost of ownership for high-voltage applications.

SiC MOSFET features include:

• Low on... (read more)

Engineered mainly for industrial drives, solar power and UPS applications, the low-profile VINco E3 package raises the performance bar with its enhanced power density and reliability. (read more)

The GS66508T is an enhancement mode GaN-on-silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. (read more)

1.2kV, 5.0 mΩ All-Silicon Carbide Half-Bridge Module (read more)

Silicon Carbide Power MOSFET C3M™ MOSFET Technology (read more)

Silicon Carbide Power MOSFET Z-FET™ MOSFET N-Channel Enhancement Mode. (read more)

The GS61004B is an enhancement mode GaN-on-Silicon power transistor. The properties of GaN allow for high current, high voltage breakdown, high switching frequency and high temperature operation. (read more)

The GS66516T is an enhancement mode GaN-on-silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. (read more)

The GS66508B-EVBDB daughterboard evaluation kits from Richardson RFPD consist of two GaN Systems 650V, 30A GaN enhancement-mode HEMTs (E-HEMTs) and all necessary circuits, including half-bridge gate drivers, isolated power supplies and optional heatsink to form a functional half-bridge power stage. The kits allow users to easily evaluate the GaN E-HEMT performance in any half-bridge topo... (read more)

Digitally Controlled MMIC Attenuators are versatile small signal RF components which attenuate an RF signal by a precise (digitally-selected) amount (in dB) (read more)

The Vincotech 10-PC094PB065ME01-L637F06Y - fastPACK 0 SiC - from Richardson RFPD is a faster, cooler and more efficient power module designed for switching frequencies up to 400 kHz. It features a fast-switching 900V SiC MOSFET that outperforms 1200V SiC MOSFETs (+8% efficiency at a light load and +3% at full load) and provides a higher safety margin than 650V MOSFETs. (read more)

The Fractus Antennas' mXTEND™ antenna booster has been specifically designed for providing multiband performance in wireless devices, enabling worldwide coverage by allowing operation in the communication standards from 698-2690MHz. (read more)

Astrodyne TDI’s three phase filters are rated up to 480VAC, 520VAC and 600VAC for both Delta and WYE configurations. Current ratings are available up to 2500A. Single, dual and multi stage designs are available for specific needs. Versions rated at higher current and voltages can be offered upon request. (read more)

Power Integrations’ SCALE-iDriver™ family of gate driver ICs are single-channel IGBT and MOSFET drivers in a standard eSOP package. Reinforced galvanic isolation is delivered using Power Integrations’ innovative solid insulator FluxLink™ technology. Output drive current up to 8 A (peak) enables the product to drive devices up to 450 A (typical). (read more)

Peregrine’s PE29100 integrated high-speed driver from Richardson RFPD is designed to control the gates of external power devices, such as GaN Systems’ E-HEMT (enhancement-mode high electron mobility transistor) gallium nitride FETs. The outputs of the PE29100 are capable of providing switching transition speeds in the sub-nanosecond range for hard switching applications up to... (read more)

Wolfspeed's 1000V silicon carbide MOSFET enables a reduction in overall system cost, while improving system efficiency and decreasing system-size. Available from Richardson RFPD, the new MOSFET is specially optimized for fast charging and industrial power supplies, enables a 30% reduction in component-count while achieving more than 3x increase in power density and a 33% increase in outp... (read more)

The simplest way to benefit from SiC diodes is as a drop-in replacement for a PFC boost diode. See how easy and beneficial it is in this short video.

Simply put, silicon carbide (SiC) outperforms silicon (Si) at higher voltages. Due to differences in material properties, SiC can be used to enable unipolar Schottky diodes for voltages where Si is restricted to bipolar device... (read more)