The NN03-320 from Fractus Antennas is a tiny antenna booster enabling full geolocation with GNSS connectivity (GPS, GALILEO, GLONASS, BeiDou) while minimizing the real estate use on your circuit board (no clearance beyond the component’s footprint). High efficiency and gain is available in an ultra-miniature footprint of 7.0 x 3.0 x 2.0mm. (read more)

The SDP Telecom 802-2750-2835MT is a 7mm square, SMT circulator that covers 27.5-28.35GHz, and has been optimized for 5G Wireless Infrastructure. This product is from SDP Telecom, a Molex subsidiary. (read more)

The Wolfspeed CMPA2735075F1 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) MMIC Amplifier. This MMIC contains a two-stage reactively matched amplifier design approach enabling very wide bandwidths to be achieved. This MMIC enables extremely wide bandwidths to be achieved in a small footprint package. (read more)

The Wolfspeed CGHV14500F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV14500 ideal for 1.2 - 1.4 GHz L-Band radar amplifier applications. (read more)

The GTRA384802FC-V1 is a 400-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. They Asymmetrical Doherty transistor features input and output matching, high efficiency, and a thermally-enhanced package with earless flange. (read more)

The Wolfspeed CMPA2060035F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based MMIC Power Amplifier. This MMIC contains a two-stage reactively matched amplifier enabling very wide bandwidths to be achieved in a small footprint screw-down package featuring a Copper-Tungsten heat-sink. (read more)

The Wolfspeed GTVA101K42EV-V1 is a 1400-watt GaN on SiC high electron mobility transistor (HEMT) for use in avionics transponder applications. It is a input matched, high efficiency device in a thermally-enhanced package with bolt-down flange. (read more)

The NXP MRF24G300HSR5 is a 300 W CW GaN transistor optimized for industrial, scientific and medical (ISM) applications at 2450 MHz. These high gain, high efficiency devices are easy to use and will provide long life in even the most demanding environments. These parts are characterized and performance is guaranteed for applications operating in the 2400 to 2500 MHz band. (read more)

The Erzia ERZ-LNA-1800-4200-24-6 is a Low Noise Amplifier providing a gain of 24 dB with a noise figure of 5 dB. The compact size and modularity makes it ideal for a wide range of applications. (read more)

Maxwell's BMOD0165P048C01 available from stock from Richardson RFPD has been tested to meet and exceed the industry’s highest shock (IEC 60068-2-27 and 2-29) and vibration (ISO 16750-3, Tables 12 and 14) ratings for ultracapacitor modules, exceeding the most demanding testing requirements for transportation applications such as in hybrid buses, particularly in China. The enhanced m... (read more)

650-6000 MHz Quad RF Transceiver for 5G (read more)

2-18GHz Low Noise Distributed Amplifier (read more)

6-18 GHz Low Noise Amplifier for MIL-STD-202g (read more)

DC–8 GHz, 1 W, GaAs MMIC pHEMT Distributed Power Amplifier (read more)

High linearity, 9kHz-6GHz, 5-bit DSA (read more)

The GS-EVB-HB-66508B-ON1 evaluation board from Richardson RFPD consists of a high-voltage gate drive solution with two GS66508B GaN E-HEMTs in a fully-functional Half-Bridge. It allows users to easily evaluate GaN in an ultra-small layout (25mm x 25mm) for a highly cost-effective solution.

Applications and Benefits:
- AC-DC Adapters for Mobile, OLED TV, Gaming... (read more)

Wolfspeed has developed the XM3 power module platform to maximize the benefits of SiC, while keeping the module and system design robust, simple, and cost effective. With half the weight and volume of a standard 62 mm module, the XM3 power module maximizes power density while minimizing loop inductance and enabling simple power bussing. The XM3’s SiC optimized packaging enables 175... (read more)

Microchip's next-generation SiC MOSFETs and SiC Schottky Barrier Diodes (SBDs) from Richardson RFPD are designed with high-repetitive Unclamped Inductive Switching (UIS) capability, excellent gate oxide shielding and channel integrity for robust operation.

Microchip's 700V SiC MOSFET offering in stock at Richardson RFPD includes Rds(on) rating of 15mΩ, 35mΩ, 60mΩ... (read more)

The GS65011-EVBEZ evaluation board from Richardson RFPD allows the user to evaluate GaN Systems’ EZDrive™ circuit. EZDrive™ is a low-cost, easy way to implement a GaN driving circuit using a standard MOSFET controller with integrated driver. It is adaptable to any power level, any frequency, and any LLC and PFC controller.

EZDrive™ features and benef... (read more)

The CRD300DA12E-XM3 300kW three-phase inverter available from Richardson RFPD demonstrates system-level power density and efficiency obtained by using Wolfspeed's new XM3 module platform. The XM3 is optimized for SiC MOSFETs in a high-density, low inductance footprint, which can reduce system losses and simplify overall design for low-loss, high-frequency operation. The three-phase inver... (read more)

Wolfspeed C3M0016120K available from Richardson RFPD

Wolfspeed extends its leadership in SiC technology by introducing the industry’s lowest Rds(on) SiC MOSFET at 1200V in a discrete package. Designers can reduce component-count by moving from silicon-based, three-level topologies to simpler two-level topologies made possible by the improved switching performance. Thi... (read more)

The KIT-CRD-3DD12P buck boost evaluation kit is optimized to demonstrate the high-speed switching capability of Wolfspeed’s 3rd Generation (C3M) silicon carbide (SiC) MOSFETs. The board features SMA connectors for monitoring the gate to source voltage. The SMA connectors offer much cleaner waveforms than traditional probes and ground leads.

This evaluation kit supports 4-lea... (read more)

GaN Systems has added a 50 W wireless power amplifier - a small size, low cost, and high efficiency evaluation board ideal for wireless power transfer and charging applications – to its family of wireless power transfer products. It is targeted for lower power applications in industrial and consumer markets for items such as power tools, IoT devices, handheld terminals, medical dev... (read more)

Power Integrations' SIC1182K is a single channel gate driver in an eSOP-R16B package for SiC MOSFETs. Reinforced galvanic isolation is provided by Power Integrations’ revolutionary solid insulator FluxLink technology. The SIC1182K boasts the highest peak-output gate current available without an external boost stage. Devices can be configured to support different gate-drive voltage... (read more)

GaN Systems' GS-065-0xx-1-L devices - available as 3.5A, 8A and 11A devices - are ideal for low power applications, including charging, power supplies, lighting and appliances. They feature:

• Industry standard 5 mm x 6 mm PDFN packages
• Assembly using standard SMT process
• Scalable: 3.5 A to 11 A in the same footprint
• Fast, clean switching spee...

The 6.6kW Bi-directional OBC targets high-efficiency, high-power-density, onboard charger applications. The high voltage rating of Wolfspeed SiC MOSFETs allow the DC bus voltage to vary according to the battery voltage to achieve optimal efficiency.

Wolfspeed SiC MOSFETs in new low-inductance packaging can cut switching losses and simplify designs as seen here. The 6.6kW OBC featu... (read more)

The GaN Systems GS-010-120-1-P is an enhancement mode GaN-on-Silicon power transistor available from Richardson RFPD. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems implements patented Island Technology^® cell layout for high-current die performance & yield. GaNPX^® packaging enables lo... (read more)

Microsemi's MSCSICSP3/REF2 reference design from Richardson RFPD provides an example of a highly isolated SiC MOSFET dual-gate driver for the SiC SP3 phase leg modules. It can be configured by switches to drive in a half bridge configuration with only side on at any time and with dead time protection. It can also be configured to provide concurrent drive, if necessary. This design is int... (read more)

Microsemi Low Inductance SP6LI Driver Reference Design from Richardson RFPD

• Featuring brand new SP6LI (Low Inductance) SiC Module
• Stray inductance < 3 nH to fully benefit from SiC
• Designed to be easy to parallel
• Up to 1200 V and 586 A
• Half Bridge Driver
• Up to 400 kHz switching frequency
• ...

Microsemi’s SP6LI extremely low inductance silicon carbide (SiC) MOSFET power modules from Richardson RFPD feature phase leg topology ranking from 1200 volts (V), 210 amperes (A) to 586 A at a case temperature (Tc) of 80 degrees Celsius to 1700 V, 207 A at Tc of 80 degrees Celsius. Offering higher power density and a compact form factor, the new package enables lower quantity of mo... (read more)

GaN Systems 300W, 6.78 MHz Class EF2 Power Amplifier For Wireless Power Transfer available from Richardson RFPD.

The GSWP300W-EVBPA evaluation board is designed to support and expedite the innovation of wireless power transfer systems. The evaluation board uses our GS66508B E-HEMTs in a 300W 6.78MHz class EF2 power amplifier. With select component changes, the evaluation board can... (read more)

GaN Systems 100W, 6.78 MHz Class EF2 Power Amplifier For Wireless Power Transfer available from Richardson RFPD.

The GSWP100W-EVBPA evaluation board is designed to support and expedite the innovation of wireless power transfer systems. The evaluation board uses our GS61008P E-HEMTs in a 100W 6.78MHz class EF2 power amplifier.

Target applications include the wireless chargin... (read more)

Wolfspeed KIT8020-CRD-5FF0917P-2: Evaluation Board for Cree’s (C3M^TM) Silicon Carbide MOSFET in a TO-247-4 Package (read more)

EVALUATION BOARD: GS61008P-EVBHF

100V, GaN E-HEMT Buck Converter with High Frequency GaN Driver

The GS61008P-EVBHF facilitates the evaluation of GaN Systems' GaN E-HEMT in a high-performance DC/DC synchronous buck environment. (read more)

The first product in Microsemi's next-gen 1200 V SiC MOSFETs, the 40 mOhm MSC040SMA120B features high avalanche rating, a high short circuit withstand rating for robust operation, and ruggedness for industrial, automotive and commercial aviation power applications.

Features

• Low capacitances and low gate charge
• Fast switching speed due to low int...

The Half-Bridge Gate-Drive Power Supply Reference Design (RD) consists of a half-bridge suitable for voltages up to 1kV and a fully-isolated driver stage with isolated power supplies for the low-side and the high-side switching transistors. It is suitable for single gate/drive supply voltages as low as +4V as well as dual gate drive supply voltages as high as +20V / -5V (30V max) with no... (read more)

Tamura’s 2DM series integrates a dedicated DC-DC converter and a gate drive circuit. The series corresponds to various power modules by adding an external gate resistor of your choice. Features include: fast response (100ns typical), low common mode noise (parasitic capacitance: 15pF typical) and over current protection by DESAT detection.

Features:

• ALL-IN-ONE... (read more)

Click here to request samples from Richardson RFPD for Power Integrations' SCALE-iDriver™ Family of gate driver ICs. These single-channel IGBT and MOSFET drivers come in a standard eSOP package. Reinforced galvanic isolation is delivered using Power Integrations’ innovative solid insulator FluxLink™ technology. Output drive current up to 8 A (peak) enables the product t... (read more)

GaN Systems' Insulated Metal Substrate (IMS) Evaluation Platform provides a flexible, low cost, high power development platform for high-efficiency power systems with 3kW or higher applications. The IMS Evaluation Platform, in combination with GaNPX® packaging technology and smart design techniques, enables power engineers to quickly take full advantage of GaN power transistors in de... (read more)

Peregrine's UltraCMOS® PE29102 high-speed FETdriver brings the industry's fastest switching speeds to Gallium Nitride (GaN) Class-D audio. With a switching frequency up to 40 MHz, the PE29102 delivers the industry's fastest switching speeds, empowering design engineers to extract the full performance and switching speed advantages from GaN transistors. In class-D audio amplifiers, th... (read more)

The PE29102 is an integrated high-speed driver designed to control the gates of external power devices, such as enhancement mode gallium nitride (eGaN^®) FETs. The outputs of the PE29102 are capable of providing switching transition speeds in the sub-nanosecond range for switching applications up to 40 MHz. The PE29102 is optimized for matched dead time and offers best-in-c... (read more)

Analog Devices introduced its ADuM4120 and ADuM4121 small form factor isolated gate drivers designed for the higher switching speeds and system size constraints required by power switch technologies such as SiC (Silicon Carbide) and GaN (Gallium Nitride), while still providing reliable control over switching characteristics for IGBT (insulated gate bipolar transistor) and MOSFET (metal o... (read more)

Liquid cooling is typically used in applications where desired performance can no longer be economically met by air cooling due to thermal and/or footprint requirements. There are many ways to accomplish liquid cooling, but the most common method is to have a plate with a flow path that moves liquid under the device that is dissipating heat. After the heat is absorbed into the liquid, it... (read more)

Wakefield-Vette's extruded heat sinks from Richardson RFPD provide a greater range of natural convection soutions for higher power components and systems. Complex fin structures can be created by forcing raw aluminum through an extrusion die. These complex fin profiles allow greater heat dissipation through increased surface area while eliminating the cost and time associated with machin... (read more)

Peregrine's PE22100 from Richardson RFPD is a push-pull driver for small transformers in isolated power supply applications. The new device drives the primary of a center-tapped transformer from a 3.0 V or 5 V supply to deliver an isolated power supply.

The driver consists of an on-chip oscillator with frequency set by an external capacitor. The oscillator output is divided-by-two... (read more)

VINcoPACK E3: New Sixpack Packaged to Meet your Mid-Power Need

What about a new sixpack in low-profile package for motion control and UPS applications?
Vincotech's VINcoPACK E3 modules from Richardson RFPD are a low-profile package for mid-power inverters with sixpack configuration. These 1200 V power modules raise the performance bar with their superior efficiency an... (read more)

The SID1183K, an addition to Power Integrations’ SCALE-iDriver^TM family of galvanically isolated single-channel gate driver ICs and available from Richardson RFPD, supports IGBT blocking voltages up to 1700V and delivers a gate current up to 8A. The 8A peak output drive current enables the product to drive devices up to 600A without requiring any additional active compon... (read more)

Analog Devices, Inc. (ADI) EVAL-ADuM4121EBZ

The EVAL-ADuM4121EBZ evaluation board supports the ADuM4121 single-channel gate drivers with an integrated miller clamp. Analog Devices, Inc., iCoupler® technology provides isolation between the input signal and the output gate driver.

The ADuM4121 provides operation with voltages of up to 35 V. The integrated miller clamp act... (read more)

General Purpose Base Board for SCALE-iDriver^TM SID1182K with Booster Stage

Features

• Suitable for IGBT power modules in various housings
• Basic Active Clamping
• Short-circuit detection with Advanced Soft Shut Down (ASSD)
• External booster stage
• Electrical command inputs and status outputs<.../li>

General Purpose Base Board for SCALE-iDriver^TM SID1182K

Features

• Suitable for IGBT power modules in various housings
• Short-circuit detection with Advanced Soft Shut Down (ASSD)
• Electrical command inputs and status outputs
• 0V/5V command input logic
• 0V/5V status output logic
• Minimum puls...

CRD-20DD09P-2: 20kW Full Bridge Resonant LLC Converter for 1000V, 65 mΩ SiC MOSFETs in a 4L-TO247 package

> Evaluate converter level efficiency and power density gains when using the new 1000 V, 65 mΩ SiC MOSFETs in a 4L-TO247 package in a full bridge resonant LLC circuit
> Check waveforms such as Vgs and Vds and Id for ringing
> Evaluate thermal p... (read more)

The new flowPACK 1 SiC is faster than 1200 V SiC MOSFETs, safer than 650 V MOSFETs and perfect for charging stations that require soft-switching for LLC topology. This 3xhalf-bridge achieves the efficiency you need at nominal and at partial loads. And its increased switching frequency and power density help to reduce your overall system costs.

Main Benefits

...

High efficiency bridgeless totem pole PFC reference design using GaN E-HEMT

This reference design demonstrates the operating principle and design considerations of Bridgeless Totem Pole PFC (BTPPFC) using GaN enhancement mode HEMT (E-HEMT). A 3-kW BTP-PFC design example using GaN Systems 650-V GaN E-HEMT using the GS66516T EVBDB.

Features

...

The world’s only hermetic aluminum electrolytic capacitor with glass-to-metal seal. Type MLSH has extraordinary long life and rugged construction for the most demanding power
electronics applications.

Type MLSH has superior capacitance retention compared to axial wet tantalum capacitors at -55 °C. Packaged in a robust stainless steel case capable of withstanding 80g... (read more)

MSCSICMDD/REF1 Microsemi

Silicon Carbide Test/Evaluation Products (read more)

C3M0075120K Wolfspeed, A Cree Company

Silicon Carbide Power Transistors/Modules (read more)

The Microsemi APT70SM70J is a 700V, 43A, 75mOhm silicon carbide n-channel power MOSFET module in a SOT-227/ISOTOP package. Silicon carbide (SiC) power MOSFET product line from Microsemi increase your performance over silicon MOSFET and silicon IGBT solutions while lowering your total cost of ownership for high-voltage applications.

SiC MOSFET features include:

• Low on... (read more)

Engineered mainly for industrial drives, solar power and UPS applications, the low-profile VINco E3 package raises the performance bar with its enhanced power density and reliability. (read more)

The GS66508T is an enhancement mode GaN-on-silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. (read more)

Silicon Carbide Power MOSFET C3M™ MOSFET Technology (read more)

The GS61004B is an enhancement mode GaN-on-Silicon power transistor. The properties of GaN allow for high current, high voltage breakdown, high switching frequency and high temperature operation. (read more)

The Fractus Antennas' mXTEND™ antenna booster has been specifically designed for providing multiband performance in wireless devices, enabling worldwide coverage by allowing operation in the communication standards from 698-2690MHz. (read more)