Videos
Video Library
Gate Drivers
Analog Devices: Common Mode Transient Immunity:
Commode Mode Transient Immunity as it relates to gate drivers is explained in this Tech Chat as well as the minimum gate driver CMTI required for converters integrated with Gallium Nitride (GaN) or Silicon Carbide (SiC) power semiconductors.
Analog Devices: Common Mode Transient Immunity Testing for Gate Drivers:
Analog Devices reviews its test set-up and procedures to measure the common mode transient immunity of its isolated gate drivers and their comparison against competitive solutions.
Analog Devices: Why Gate Driver Drive Strength is Essential:
Gate drivers are required for voltage level shifting, charging and discharging the system and drive strength to charge and discharge quickly.
Analog Devices: Drive Voltages for GaN and SiC Unipolar and Bipolar Gate Drivers:
This Richardson RFPD Tech Chat addresses the different gate drive levels required for optimal performance of Silicon (Si), Gallium Nitride (GaN) and Silicon Carbide (SiC) technologies.
Analog Devices: Short Circuit Protection Using Isolated Gate Drivers:
Gate drivers provide the first line of defense against short-circuit faults on power semiconductor devices.
Analog Devices: Gate Drivers Optimized for Fast-switching Power Semiconductor Technologies:
The use of Gallium Nitride (GaN) and Silicon Carbide (SiC) is increasing rapidly in many power conversion applications, but not all gate drivers are well matched for these technologies.
Power MOSFET
Wolfspeed: SiC Optimized Packaging - The Advantage of the Kelvin Source Pin:
Design engineers can realize the extended benefits of SiC with the simple implementation of a 4-lead, TO-247 package device. Learn more in this Tech Chat from Richardson RFPD & Wolfspeed.
GaN Systems: Thermal Characterization of E-HEMTs:
Just how easy is it to characterize the junction temperature of GaN Systems devices? In this Richardson RFPD Tech Chat, temperature measurement using Long-wave Infrared (LWIR) cameras is discussed.
GaN Systems: E-Mode Technology Benefits:
GaN Systems’ Enhancement-Mode Gallium Nitride (GaN) technology is often compared to other GaN technologies, such as cascode.
Wolfspeed: Benefits of SiC MOSFETs v. Competing Technologies:
In this Richardson RFPD Tech Chat we tackle the question often asked on how Silicon Carbide (SiC) compares versus competing technologies such as Silicon (Si) and Gallium Nitride (GaN).
Wolfspeed: SiC Reliability:
With many power designers focusing on silicon carbide device level qualification, reliability and consistency of supply, we delve into how Wolfspeed emphasizes the differences between reliability versus qualification testing.
Wolfspeed: Switching Frequency:
In this Richardson RFPD Tech Chat, we discuss how can power designers determine the optimal or maximum switching frequency for a given device and what can be done with a SiC device design to reduce switching losses even further.
Wolfspeed: Understanding Operational and Maximum Gate Drive Levels for SiC MOSFETs:
In this Richardson RFPD Tech Chat, we discuss the different gate drive levels of Wolfspeed Gen3 SiC MOSFETs – how adding negative gate bias improves noise immunity,