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Supplier: Rochester Electronics
Description: RQM2201DNS - N Channel MOSFET
- Package Type: Other
- Packing Method: Tape Reel, Other
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Supplier: Win Source Electronics
Description: Manufacturer: Renesas Electronics America Win Source Part Number: 182936-RJK0244DNS-00 #J5 Category: Discrete Semiconductor Products Family: FETs - Single Popularity: Low Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Balance
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Supplier: Win Source Electronics
Description: Manufacturer: Renesas Electronics America Win Source Part Number: 183114-RJK1028DNS-00 #J5 Category: Discrete Semiconductor Products Family: FETs - Single Popularity: Low Fake Threat In the Open Market: 44 pct. Supply and Demand Status: Balance
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Supplier: Win Source Electronics
Description: Manufacturer: Renesas Electronics America Win Source Part Number: 183057-RJK03B9DNS-00 Category: Discrete Semiconductor Products Family: FETs - Single Popularity: Low Fake Threat In the Open Market: 59 pct. Supply and Demand Status: Balance
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Supplier: Win Source Electronics
Description: Manufacturer: Renesas Electronics America Win Source Part Number: 182933-RJK0225DNS-00 #J5 Category: Discrete Semiconductor Products Family: FETs - Single Popularity: Low Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Balance
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Supplier: Rochester Electronics
Description: N-Channel Power MOSFET with Schottky Barrier Diode Power Switching
- Package Type: Other
- Packing Method: Tape Reel, Other
- Polarity: N-Channel
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Supplier: Rochester Electronics
Description: RJK0225 - P Channel Power MOSFET
- Package Type: Other
- Packing Method: Tape Reel, Other
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Supplier: VAST STOCK CO., LIMITED
Description: MOSFET BEAM2 Series FET, 30V, HWSON3030-8
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Supplier: Rochester Electronics
Description: Power Field-Effect Transistor, N-Channel MOSFET
- Package Type: Other
- Packing Method: Tape Reel, Other
- Polarity: N-Channel
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Supplier: Acme Chip Technology Co., Limited
Description: N-CHANNEL POWER MOSFET
- Packing Method: Bulk Pack, Other
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Supplier: Acme Chip Technology Co., Limited
Description: N CHANNEL POWER MOS FET
- Packing Method: Bulk Pack, Other
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Supplier: Acme Chip Technology Co., Limited
Description: POWER MOSFET
- Packing Method: Bulk Pack, Other
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Description: N-CHANNEL POWER MOSFET
- Packing Method: Bulk Pack, Other
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Supplier: Acme Chip Technology Co., Limited
Description: N-CHANNEL POWER SWITCHING MOSFET
- Packing Method: Bulk Pack, Other
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Description: N CHANNEL 30V, 30A, POWER SWITCH
- Packing Method: Bulk Pack, Other
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Description: MOSFET N-CH 16V 3.8A 2HWSON
- IDSS: 3800 milliamps
- Package Type: Other
- Packing Method: Tape Reel, Other
- V(BR)DSS: 16 volts
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Description: MOSFET N-CH
- Packing Method: Bulk Pack, Other
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Mouser Electronics, Inc., the global authorized distributor with the newest semiconductors and electronic components, is now shipping the new WINC1500 Wi-Fi Module from Atmel Corporation. The WINC1500 is a low-power consumption 802.11 b/g/n WiFi module specifically optimized for low power (read more)
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Over the connections of sulfur antimony with antimony oxide
- By langsanier Abktihliing is indeed the compound of Scbwefelantimon with oxide a conductor and krystallinisch by ones @kern contents of oxide also becomes it by a semiconductor is it occurring Rothspiesglauzerz how the DNA very indeed krystallinisch to langsainen Abkiihlen in …
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Direct-current-conductivity measurements on to Film-the deoxyribonucleic-acid
Because of the Temperagurabhiingigkeit of the Leitf / ~ higkeit, the DNA was taken up 2,4 eVs gez ~ hlt and a forbidden zone yon so far to the organisehen semiconductors .
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Thermal Modeling of Multi-Fin Field Effect Transistor Structure Using Proper Orthogonal Decomposition
The DNS is, however, prohibitive for simulation of semiconductor ICs due to its high-computational cost.
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A collision model of charge exchange between metal and polymer spheres
… Dns/e where V(x)is the potential at any distance x, N d is the concentration of impurity in the carriers, K is the dielectric constant of the semiconductor , XO is the charge penetration depth and ( Dns is the barrier height.
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Pull at the life thread: experiments with individual DNS‐Molekülen
The electronic structure of the DNA allows it in the principle to use the molecular strand as electrical conductors or even as " semiconductor structure element".
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Science Topically
… itself different localization degree not only the charge separation in MEH-PPV erklart, but dai3 cs a very general principle that fur is the description of polymeric semiconductors of grundsatzlicher meaning and … … of damage in the DNA and Ausheilung of which …
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Characterization of InGaAs/AlGaAs pseudomorphic modulation-doped field-effect transistors
M I. INTRODUCTION ODULATION-DOPED heterojunction semicon- ductor -structures have been shown to be excel.ent candidates for field-effecttransistors (MODFET’s) dns to their superior electron transport properties parallel to the heterointerface.
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http://dspace.mit.edu/bitstream/handle/1721.1/46669/428091372-MIT.pdf?sequence=2
Furthermore, in order for ionic amorphous oxide semiconductors to have large electron mobilities comparable to those of the corresponding crystals, the constituing metal cations should have an electronic configuration (n-1) dns (n>5), i.e. heavy post transition metal cations.
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Piezoresistance of n‐Silizium in dependence of the electric field strength
The physical cause consists in the genugender field star germ much valley semiconductor fails by a detailed balance of the Taler daB i.e. of daBfur … … of the same energy the valley verlaBt, that are scattered the valley in DNA .
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Lectures
… trace structure and strahlungsbedingten biological effects zusammenhängen� result: a Mikrokalorimeter was developed that became rules energy and experiments different through comparison with tissue equivalents proportionality counters and semiconductor -Mikrodosimetern the provision of … … beam interaction on the DNA and installed in a …