Products/Services for FET Reflex Receiver
-
Transistors - (701 companies)...transistors (FETs), also called unipolar transistors, are transistors with only two layers of semiconductor material. They include gate, source, and drain components. The gate is the semiconductor layer and terminal that modulates current via...Transistor TypePolarityPackage Type -
RF Receivers - (272 companies)RF receivers are electronic devices that enable a particular radio signal to be separated from all others being received and converted into a format for video, voice, or data. RF receivers are electronic devices that separate radio signals from one... -
Pulser-Receivers - (29 companies)Pulser-receivers generate ultrasonic pulses, which are propagated into materials for NDT testing. Pulser-receivers (also referred to as pulser/receivers) generate ultrasonic pulses, which are propagated into materials for nondestructive testing (NDT... -
Air Receivers - (29 companies)Air receivers serve as buffers between a compressor and the consumption mechanism of a compressed air system. Air receivers serve as buffers between a compressor and the consumption mechanism of a compressed air system. They are essential...
-
Magnetic Receivers - (5 companies)Magnetic receivers use the electromagnetic principle to receive and analyze signals. The simplest of these devices is the telephone. Magnetic receivers use the electromagnetic principle to receive and analyze signals. Electromagnetic principle can... -
Telemetry Receivers and Telemetry Transmitters - (361 companies)Telemetry receivers and telemetry transmitters are data acquisition components used to gather information from remote locations via wireless communication. Telemetry receivers and telemetry transmitters can be produced as separate receiver...
-
Metal-Oxide Semiconductor FET (MOSFET) - (228 companies)While MOSFETs technically have four terminals -- source, gate, drain, and body (or S,G,D, and B) -- the body terminal is typically connected to the source, effectively making them three terminal devices like other field-effect transistors (FET...
-
Radios - (375 companies)...of a transmitter, receiver, and antenna. They are available in mobile and base configurations. Performance. Unlike cellular phones, radios do not require a monthly contract or carry per-call charges. In the United States, two-way radios are regulated...
-
Radio Receiver ICs - (30 companies)Radio receiver ICs support worldwide radio band requirements, including frequency modulation (FM), FM radio data system (RDS), amplitude modulation (AM), long wave (LW), short wave (SW), and weather bands. These integrated circuits (ICs...
-
Fiber Optic Receivers - (116 companies)Fiber optic receivers are instruments that convert light into electrical signals. They contain a photodiode semiconductor, signal conditioning circuitry, and an amplifier. How to Select Fiber Optic Receivers. Image Credit: Avago Technologies...
Product News
-
AMETEK Programmable Power
ReFlex Power Chassis ReFlex Power TM is a high density, modular programmable power system providing DC, AC and electronic load assets all under control of a single controller. It provides a reconfigurable, flexible platform ideal for ATE and production test environments where RFP TM can provide programmable stimulus and bias power as well as programmable loads for the device(s) under test. The EIA 4U high RFP TM mainframe can hold up to 12 single-slot modules or combinations of single, dual and triple slot wide... (read more)Browse Industrial Chassis and Card Cages Datasheets for AMETEK Programmable Power -
Lingto Electronic Limited
Interface-Drivers, Receivers, Transceivers AMIS41682- CAN TRANCEIVER. Specifications. Manufacturer : Rochester Electronics. Manufacturer Part Number: 0CANM-001-XTD. Product Category: Network and Communication Chips. Device Type: Transceiver. Datasheet (read more)Browse Network and Communication Chips Datasheets for Lingto Electronic Limited -
Nexperia B.V.
E-mode GaN FETs Announcing the launch of e-mode GaN FETs for low & high voltage applications. Nexperia 's new portfolio includes two <= 150 V rated devices (3.2 m O and 7 m O) in WLCSP8 and FCLGA packages, as well as five 650 V rated devices, with RDS(on) values between 80 m O - 190 m O, in a choice of DFN 5x6 mm and DFN 8x8 mm packages. Nexperia e-mode GaN FETs provide the ideal balance between switching performance and robustness, for use in industrial and consumer applications. (read more)Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Nexperia B.V. -
Nexperia B.V.
MOSFET & GaN FET Application Handbook Written by engineers - for engineers - we share expertise and learnings that our engineering teams have built up over many years of helping customers in a variety of sectors take their applications from initial concept, though prototyping and on into final production. With over 600 pages of useful guidance on common topics and issues that the design engineer is likely to encounter, the handbook provides insight into the sometimes confusing and complex behaviour of MOSFETs and Power GaN FETs... (read more) -
Win Source Electronics
Transistors - FETs, MOSFETs - RF 2N7002LT1G Part No. 2N7002LT1G. Manufacturer. ON Semiconductor. Catalog. Transistors - FETs, MOSFETs - RF. Description. MOSFET N-CH 60V 0.115A SOT-23. ECAD Module. Categories. Discrete Semiconductor Products. Manufacturer. ON Semiconductor. Packaging. Reel - TR. Status. Active. Polarity. N-Channel. Technology. MOSFET. Drain-Source Breakdown Voltage. 60V. Continuous Drain Current at 25 C. 115mA (Tc). Drive Voltage (Max Rds On, Min Rds On). 5V, 10V. Gate-Source Threshold Voltage. 2.5V @ 250 mA. Max Input... (read more)Browse Transistors Datasheets for Win Source Electronics -
DigiKey
Versatile Link Fiber Optic Receiver: AFBR-2521CZ The AFBR-25x1CZ receiver consists of an IC with an integrated photodiode providing a TTL logic families compatible output. In combination with the Broadcom AFBR-15x9Z or AFBR-16x9Z transmitter any type of signal from DC up to 5MBd at distances up to 50 meters with 1mm 0.5NA POF and 500 meters with 200 um 0.37NA PCS is supported. The receiver is a 4-pin device, packed in Versatile Link housing. Versatile Link components can be interlocked (N-plexed together) to minimize space and to provide dual... (read more)Browse Fiber Optic Cables Datasheets for DigiKey -
Qorvo
750V / 23mOhm, SiC FET, G4, TOLL The UJ4C075023L8S is a 750V, 23 mohm G4 SiC FET. It is based on a unique 'cascode ' circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device 's standard gate-drive characteristics allows use of off-the-shelf gate drivers hence requiring minimal re-design when replacing to Si IGBTs, Si FETs, SiC MOSFETs or Si superjunction devices. Available in the TOLL (MO-229) package, this device exhibits ultra-low gate charge... (read more)Browse RF Transistors Datasheets for Qorvo -
Qorvo
750V / 33mOhm, SiC FET, G4, TOLL The UJ4C075033L8S is a 750V, 33 mohm G4 SiC FET. It is based on a unique 'cascode ' circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device 's standard gate-drive characteristics allows use of off-the-shelf gate drivers hence requiring minimal re-design when replacing Si IGBTs, Si superjunction devices or SiC MOSFETs. Available in the space-saving MO-229 package which enables automated assembly, this device... (read more)Browse RF Transistors Datasheets for Qorvo -
Qorvo
750V / 58mOhm, SiC FET, G4, TOLL The UJ4C075060L8S is a 750V, 58 mohm G4 SiC FET. It is based on a unique 'cascode ' circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device 's standard gate-drive characteristics allows use of off-the-shelf gate drivers hence requiring minimal re-design when replacing Si IGBTs, Si superjunction devices or SiC MOSFETs. Available in the space-saving MO-229 package which enables automated assembly, this device... (read more)Browse RF Transistors Datasheets for Qorvo -
Qorvo
750V / 44mOhm, SiC FET, G4, TOLL The UJ4C075044L8S is a 750V, 44 mohm G4 SiC FET. It is based on a unique 'cascode ' circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device 's standard gate-drive characteristics allows use of off-the-shelf gate drivers hence requiring minimal re-design when replacing Si IGBTs, Si superjunction devices or SiC MOSFETs. Available in the space-saving MO-229 package which enables automated assembly, this device... (read more)Browse RF Transistors Datasheets for Qorvo
More Information
Indicates content that may require registration and/or purchase.
-
Diagnostic Nuclear Medicine
…117, 167, 186, 234, 252 – FDOPA 18, 190 – FESP 315 – FET 253 – FLT … 118, 127 – Technegas 252 – Tetrofosmin 167, 248 – Thallium 27 – Tyrosine 27, 41, 190 – VIP 158 – Water 12, 47 – Xenon 67, 251 Receiver -operating-characteristic (ROC) 77 … 292 – Iterative 291 Reflex sympathetic dystrophy (RSD) 109…
-
Author Index
Pt-MOS- FET . .... Read out electronics Recalibration Receiver Recrystallisation Recurrent networks Recycling biosensors Reference electrode Reflected impedance Reflection Reflex act Refractive index variation .
-
1978 Index IEEE Transactions on Biomedical Engineering Vol. BME-25
…stimulators; three-channel vesical stimulator for sequential pulsing of detrusor muscle of urinary bladder; Naumann, Stephen; T-BME v25 n3 May 78 307-311 (2A 14) Implantable radio receivers biomedical telemetry; transmission and … F03) Integrated circuits; cf. FET integrated circuits; MOSFET integrated … BME v25 nI Jan 78 94-96 (2A04) Limbs ankle; joint compliance and reflex gain measurement; Goutlieb…
-
Target Detection by Marine Radar
Alternatively, a FET transistor may be used in an oscillating positive feedback amplifier. .... Formerly, reflex klystron valves were used. .... a limited range, which if exceeded, may throw off to a large error, grossly degrading receiver performance.
-
Fundamentals of Ground Radar for Air Traffic Control Engineers and Technicians
These gallium-arsenide- FET (GAsFET) devices are off-the-shelf technology taken from the satellite- receiver industry. .... Early in the development of 3-cm (X-band) radars in WWII, a reflex klystron was used…
-
Électrophysiologique analysis and comparison at the Man of the reflex of Hoffmann and of the myotatique reflex
These flexural manceuvres promote aflleurs in eertains subjects, the appearance of spontaneous rebounds of the électromyographique activity and the presence of post-charging states extended from the type of the "iate-diseharge" of M_AGL~1)~R:fet ' toll. .... The importance of the " inhibition autog6niquc " in reflex eoordinations was recently still emphasized in a .... The today well admitted function, tendineux receivers of GOLGIles designate as the main players of these observable…
-
Guest editorial
…systems is discussed in “Decision and Clock Recovery Circuits for Gigahertz Optical Fiber Receivers in Silicon NMOS … is pre- sented in “Optimum Design of a 4-Gbit /s GaAs MES- FET Optical Preamplifier,” .... ” In “Gigahertz Signal Processing Using Reflex Optoelec- tronic Switching Matrices,” D. K. W. Lam and…
-
Optomechanical Design Of A Grating Power Combiner For Laser Diodes
The bias electronics utilized a feedback circuit to maintain optimum FET bias given changes in the laser's .... 66 / SPIE Vol. 1044 Optomechanical Design of Laser Transmitters and Receivers (1989). .... This retroreflects a small fraction of the beam back to the reflex detector (la) for wavelength feedback…
-
Front cover and table of contents
...................R. B. Darling A 2-GHz Optical Receiver Using Commercially Available Components............A. Azizi and L. Altwegg An APD/ FET Optical Receiver Operating at 8 Gbit/s .................................................. ...........B. L. Kasper, J. .... Polak-Dingles, H.-L. A. Hung, and H. C. Huang Gigahertz SignalProcessing Using Reflex Optoelectronic Switching Matrices.
-
2004 Index
micromachined reflex klystrons for operation, terahertz freqs., optim. .... MOS analog integrated circuits utilizing 0.18-µm PMOS transistors, 2.4-GHz receiver . .... 04 2004 9-12 Vol.1 phys. dyn. electro thermal large sig. model for RF LDMOS FETs .
