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Services
   Services       
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   Design / Engineering       Suppliers can assist with concepts, manufacturing costs, manufacturing techniques and material considerations. Suppliers may also be able to assist in upgrading or redesigning, re-evaluating or modernizing existing products to increase performance and/or reduce manufacturing costs. Suppliers often use computer-aided design (CAD) and/or structural and thermal analysis software to improve the design process. 
   R & D / Development       Suppliers develop new or specialized semiconductor devices and manufacturing processes on a contractual basis to meet application-specific requirements. They also research underlying factors or properties required for the consistent control of material-critical components. 
   Prototyping       Suppliers can build short runs of representative parts for use in presentations and functional testing. 
   Pilot / Scale-Up       Suppliers can provide initial pilot runs or low-volume production. 
   Production       Suppliers can provide high-volume production. 
   Specialty / Other       Other proprietary, specialized or unlisted capabilities. 
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Capabilities
   Wafer Processing       
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   CMP       Chemical mechanical polishing (CMP) processes are used for planarization of deposited structures. 
   PVD Thin Film       Physical vapor deposition (PVD) is a metallization or thin-film process such as evaporation or sputtering that uses physical means. 
   CVD Thin Film       Chemical vapor deposition (CVD) is a metallization or thin-film deposition process in which gaseous chemicals precursors are reacted to form deposits of oxides, nitrides, dielectric ceramics or other complex compounds. 
   Thick Film / Screen Printing       Thick-film circuits or interconnects are formed using a metal paste or ink. Usually, circuit patterns are formed with a screen-printing process. 
   Dry Etching (Plasma / RIE)       Dry etching processes include plasma or reactive ion etching (RIE) techniques to remove layers from or cut patterns into substrates. 
   Wet / Chemical Etching       Wet etching processes use acids or other chemical solutions to remove layers from or cut patterns into substrates. 
   Photolithography       Lithography transfers circuit or device patterns onto a substrate using a patterned mask and a beam of light or electrons to selectively expose a photoresist layer. The uncured photoresist is removed and the wafers are exposed to an acid or chemical solution that selectively etches the uncovered regions of the substrate. 
   Wafer Level Packaging (Bumping / RDL)       Wafer level packaging uses solder bumping or redistribution line (RDL) technology directly on a wafer. 
   Via Forming / Filling       Via forming or via filling provides patterned circuits or vias in the ceramic substrate for the interconnection of electronic components and packaging of dies. 
   Other       Other proprietary, specialized or unlisted processes. 
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   Device Type:       
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   Analog       Analog devices have an output that is proportional to the input. 
   ASIC        Application-specific integrated circuit (ASIC). 
   High Voltage       High-voltage components are used for power transmission or power conversion. 
   Logic       Logic gates are collections of transistors and resistors that implement Boolean logic operations.   
   Memory       Memory is used to store data temporarily. 
   Microprocessor       Microprocessors are integrated circuits (IC) that accept coded instructions, execute the instructions received, and deliver signals that describe the internal status. 
   Oscillator / Transistor-Oscillator (TO)       Oscillators generate a specific tone or frequency. 
   Passive Components       Passive components include packaged devices such as capacitors and resistors as well as packages that include both passive and active components. 
   Power Electronics       Power electronics are used in power supplies, power rectifiers or power conditioners. 
   Sensors       Micro-electrical mechanical systems (MEMS) contain sensors or sensor systems such as accelerometers, pressure sensors, optical detectors, density sensing elements, flow sensors or temperature sensors. 
   Specialty / Other       Other proprietary, specialized or unlisted device types. 
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   Device Voltage       
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   1.2 V       The supply voltage (VCC) is 1.2 Volts. 
   1.5 V       The supply voltage (VCC) is 1.5 Volts. 
   1.8 V       The supply voltage (VCC) is 1.8 Volts. 
   2.5 V       The supply voltage (VCC) is 2.5 Volts. 
   3 V       The supply voltage (VCC) is 3 Volts. 
   3.3 V       The supply voltage (VCC) is 3.3 Volts. 
   5 V       The supply voltage (VCC) is 5 Volts. 
   Other       Any other supply voltage (VCC) not listed. 
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Materials
   Process Technology:       
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   0.09µm Process       The 0.09µm process determines the size of the transistors and paths etched on the wafer. 
   0.13µm Process       The 0.13µm process determines the size of the transistors and paths etched on the wafer. 
   0.18µm Process       The 0.18µm process determines the size of the transistors and paths etched on the wafer. 
   0.25µm Process       The 0.25µm process determines the size of the transistors and paths etched on the wafer. 
   0.35µm Process       The 0.35µm process determines the size of the transistors and paths etched on the wafer. 
   0.50µm Process       The 0.50µm process determines the size of the transistors and paths etched on the wafer. 
   0.65µm Process       The 0.65µm process determines the size of the transistors and paths etched on the wafer. 
   0.80µm Process       The 0.80µm process determines the size of the transistors and paths etched on the wafer. 
   1.00µm Process       The 1.00µm process determines the size of the transistors and paths etched on the wafer. 
   1.50µm Process       The 1.50µm process determines the size of the transistors and paths etched on the wafer. 
   1.20µm Process       The 1.20µm process determines the size of the transistors and paths etched on the wafer. 
   3.00µm Process       The 3.00µm process determines the size of the transistors and paths etched on the wafer. 
   Specialty / Other       Other proprietary, specialized or unlisted capabilities. 
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   Logic Family       
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   TTL       Transistor-transistor logic (TTL) is a class of digital circuits built from bipolar junction transistors (BJT), diodes and resistors. It is notable, as it was the base for the first widespread semiconductor integrated circuit (IC) technology. All TTL circuits operate with a 5 V power supply. TTL signals are defined as "low" or L when between 0 V and 0.8 V with respect to the ground terminal, and "high" or H when between 2 V and 5 V. The first logic devices designed from bipolar transistors were referred to as standard TTL. The addition of Schottky diodes to the base collector of bipolar transistor was called Schottky logic (S-TTL). Schottky diodes shorten propagation delays within TTL by preventing the collector from going into what is called “deep saturation.”  Other TTL technologies include low-power Schottky (LS-TTL), advanced Schottky (AS-TTL), advanced low-power Schottky (ALS-TTL), and low-voltage TTL (LVTTL). 
   FAST       Fairchild advanced Schottky TTL (FAST) technology was created in late 1970 when advances in IC technology allowed the speed and drive of S-TTL to be combined with the lower power of LS-TTL to form a new logic. An advanced related family is the FASTr, which is faster then FAST, has a higher driving capability (IOL, IOH), and produces much lower noise. The “r” in FASTr refers to the various speed grades, such as A, B and C, where an “A” designation means low speed and “C” means high speed. 
   Standard CMOS / CMOS (4000)       Complementary metal-oxide semiconductor (CMOS) logic uses a combination of p-type and n-type metal-oxide-semiconductor field effect transistors (MOSFET) to implement logic gates and other digital circuits found in computers, telecommunications and signal processing equipment. It is the technology of choice for many present-day digital integrated circuits. CMOS 4000 refers to the series 4000 that is true CMOS with non-TTL levels. 
   Fast CMOS (FCT)       Fast CMOS technology (FCT) was introduced in 1986. With this technology the speed gap between CMOS and TTL was closed. Since FCT is the CMOS version of FAST, it has the low power consumption of CMOS but speed comparable with TTL. Advanced versions of the FCT standard are FCTx and FCTx-T. The x in FCTx and FCTx-T refers to the various speed grades, such as A, B and C, where an “A” designation means low speed and “C” means high speed. 
   High-Speed CMOS (HCMOS)       High-speed CMOS technology (HCMOS) is also known as HC / HCT. There are several basic flavors of HCMOS technology: high-speed CMOS (HC), high-speed CMOS with TTL input (HCT), advanced high-speed CMOS (AHC), and advanced high-speed CMOS with TTL inputs (AHCT). 
   Advanced CMOS       Advanced CMOS is a much higher speed version of HCMOS.  It is also known as AC / ACT.  Advanced CMOS technology comes in different flavors: standard advanced CMOS (AC), advanced CMOS with TTL inputs (ACT), advanced CMOS with quiet outputs (ACQ), advanced CMOS with TTL inputs and quiet outputs (ACTQ), advanced ultra-Low voltage CMOS (AUC), advanced ultra-low power CMOS (AUP), advanced very-low voltage CMOS (AVC), advanced low voltage HCMOS (ALVC), and advanced low voltage CMOS with bus hold (ALVCH).  ACQ / ACTQ are second generation Advanced CMOS with much lower noise. While ACQ has the CMOS input level, ACQT is equipped with TTL level input. 
   Low Voltage CMOS       There are several low voltage CMOS technologies: standard low voltage (LV), low voltage high performance HCMOS (LVC), low voltage CMOS technology with TTL inputs (LVT), Low voltage with TTL inputs and high impedance (LVTC), advanced low voltage CMOS with bus hold (ALVCH), low voltage CMOS that operates with 3 V or 5 V (LCX), and low voltage CMOS that operates with 1.8 V or 3.6 V (VCX). 
   BiCMOS       BiCMOS is a SiGe Bipolar technology that combines the high speed of bipolar TTL with the low power consumption of CMOS. There are a number of BiCMOS flavors including advanced BiCMOS technology (ABT), advanced BiCMOS technology with enhanced transceiver logic (ABTE), advanced low-voltage BiCMOS (ALB), advanced low-voltage BiCMOS technology (ALVT), BiCMOS with TTL inputs (BCT), BiCMOS with backplane and transceiver logic (BTL), and low-voltage BiCMOS technology (LVT). 
   ECL       Emitter coupled logic (ECL) uses transistors to steer current through gates that compute logical functions. By comparison, TTL and related families use transistors as digital switches, where the transistors are either cut off or saturated, depending on the state of the circuit. This distinction explains ECL's chief advantage: that because the transistors are always in the active region, they can change state very rapidly, so ECL circuits can operate at very high speed; and also its major disadvantage: the transistors are continually drawing current, which means the circuits require high power, and thus generate large amounts of waste heat. ECL gates use differential amplifier configurations at the input stage. A bias configuration supplies a constant voltage at the midrange of the low and high logic levels to the differential amplifier, so that the appropriate logical function of the input voltages will control the amplifier and the base of the output transistor. The propagation time for this arrangement can be less than a nanosecond. Other noteworthy characteristics of the ECL family include the fact that the large current requirement is approximately constant, and does not depend significantly on the state of the circuit. This means that ECL circuits generate relatively little power noise, unlike many other logic types that typically draw far more current when switching than quiescent, for which power noise can become problematic. ECL circuits operate with negative power supplies, and logic levels incompatible with other families, which means that interoperation between ECL and other designs are difficult. The fact that the high and low logic levels are relatively close mean that ECL suffers from small noise margins, which can be troublesome in some circumstances. 
   Integrated Injection Logic (I2L)       Integrated injection logic (I2L) is based on bipolar transistor logic. It is commonly referred to as "I-square-L." 
   Silicon on Sapphire (SOS)       Silicon on sapphire (SOS) is a hetero-epitaxial process wherein a thin layer of silicon is “grown” on a sapphire (Al2O3) wafer. SOS is part of the silicon on insulator (SOI) family of CMOS technologies. SOS is primarily used in military and space applications because of its inherent resistance to radiation. It has seen little commercial use to date because of difficulties in fabricating the very small transistors used in modern high-density applications. Problematically, the SOS process often results in the formation of dislocations from crystal lattice disparities between the sapphire and silicon.  This leads to unusable wafers and drives up the production cost. 
   Gallium Arsenide (GaAs)       Gallium arsenide (GaAs) is a compound semiconductor mixing the strength of two elements, gallium (Ga) and arsenic (As). Gallium is a byproduct of the smelting of other metals, notably aluminum and zinc, and is rarer than gold. Arsenic is not rare, but it is poisonous. Gallium arsenide has many uses including being used in some diodes, field-effect transistors (FETs), and integrated circuits (ICs). GaAs components are useful at ultra-high radio frequencies and in fast electronic switching applications. GaAs devices generate less noise than most other types of semiconductor components and, as a result, are useful in weak-signal amplification applications. Gallium arsenide is used in the manufacture of light-emitting diodes (LEDs), which are found in optical communications and control systems. Gallium arsenide can replace silicon in the manufacture of linear and digital ICs. Digital devices are used for electronic switching, and also in computer systems. 
   Indium Phosphide (InP)       Indium phosphide (InP) is a compound semiconductor composed of indium (In) and phosphorous (P). It is used in high-power and high-frequency electronics because of its superior electron velocity. 
   Silicon on insulator (SOI)       Silicon on insulator (SOI) is a semiconductor wafer technology that produces higher performing and lower power devices than traditional bulk silicon techniques. SOI works by placing a thin insulating layer between a thin layer of silicon and the silicon substrate. 
   Other       Other unlisted logic families. 
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Industry Served
   Application:       
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   Aerospace / Defense       Suppliers provide semiconductor devices aerospace or other high-reliability applications. 
   Biotechnology / Medical       Suppliers provide semiconductor devices for medical or biotechnology applications. 
   Automotive       Suppliers provide semiconductor devices for automotive applications. 
   Computer / PC       Suppliers provide semiconductor devices for computer or personal computer (PC) applications. 
   Fiber Optics / Telecommunications       Suppliers provide semiconductor devices for fiber optics and telecommunications applications. 
   Imaging / Vision       Suppliers provide semiconductor devices for imaging or vision applications. 
   Wireless       Suppliers provide semiconductor devices wireless, radio frequency (RF) or microwave applications. 
   Specialty / Other       Other proprietary, specialized or unlisted applications. 
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Location
           
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   North America       Companies are located in the United States, Canada or Mexico. 
   United States Only       Companies are located in the United States. 
   Northeast US Only       Companies are located in the Northeast United States, namely Connecticut, Maine, Massachusetts, New Hampshire, New Jersey, New York, Pennsylvania, Rhode Island and Vermont. 
   Southern US Only       Companies are located in the Southern United States, namely Alabama, Arkansas, Delaware, Florida, Georgia, Kentucky, Louisiana, Maryland, Mississippi, Missouri, North Carolina, Oklahoma, South Carolina, Tennessee, Texas, Virginia, Washington D.C., and West Virginia. 
   Southwest US Only       Companies are located in the Southwest United States, namely Arizona, California, Colorado, Nevada, New Mexico and Utah. 
   Northwest US Only       Companies are located in the Northwest United States, namely Idaho, Montana, Oregon, Washington and Wyoming. 
   Midwest US Only       Companies are located in the Midwest United States, namely Illinois, Indiana, Iowa, Kansas, Michigan, Minnesota, Nebraska, North Dakota, Ohio, South Dakota and Wisconsin. 
   Canada Only       Companies are located in Canada. 
   South / Central America Only       Companies have facilities in South American countries such as Argentina, Brazil, or Chile; or in Central American countries such as Costa Rica, Honduras, Panama, etc. 
   Europe Only       Companies are located in Europe, namely Germany, Ireland, Italy, United Kingdom, etc. 
   South Asia Only       Companies are located in South Asia, namely India, Pakistan, Nepal, etc. 
   Near East Only       Companies are located in the Near East, namely Egypt, Israel, Saudi Arabia, etc. 
   East Asia / Pacific Only       Companies are located in East Asia, namely China, Japan, Taiwan, etc. 
   Other       Other unlisted country or region. 
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