Used beneath photoresists in a bilayer stack, PMGI and LOR resists create a controlled undercut profile that extends lift-off performance beyond the limits of single-layer systems.

These materials support both ultra-high-resolution metallization (<0.25 µm) and thick metal deposition (>3 µm), making them well-suited for applications ranging from data storage and wireless ICs to MEMS and advanced microelectronics.

Available in multiple formulations, PMGI and LOR resists enable flexible process tuning to meet diverse lithography and metallization requirements, delivering reliable and clean lift-off performance across a wide range of fabrication workflows.

Key Features:

• Won’t intermix when over-coated with imaging resists
• Single step development of bi-layer stack in TMAH, or KOH developers
• Removes quickly and cleanly in conventional resist strippers
• Enables sub 0.25μm micron bi-layer resist imaging
• Enables high yield, very thick (>3μm) metal lift-off processing
• High thermal stability: Tg ~190°C

Material Uses:

• Bilayer lift-off processing
• Undercut profile formation for metal lift-off
• Fine-feature thin-film metallization
• Electron-beam and UV lithography processes
• Sacrificial release layers
• High-resolution pattern transfer