Product Overview The 2N7002ET1G from ON Semiconductor is a versatile N-Channel MOSFET designed to meet the needs of a wide range of electronic applications, offering high performance and efficiency.

Key Features

• Drain-Source Breakdown Voltage: 60V
• Continuous Drain Current: 260mA at 25°C
• Gate-Source Threshold Voltage: 2.5V @ 250μA
• Maximum Rds On: 2.5 Ohm @ 240mA, 10V
• Max Gate Charge: 0.81nC @ 5V
• Max Input Capacitance: 26.7pF @ 25V
• Fast Switching Speed: Turn-on delay time of 3ns, Turn-off delay time of 9ns
• Low On-Resistance (Rds(on)): 7.5 Ohm
• Temperature Range: -55°C to 150°C
• Package: SOT-23-3 (TO-236), Surface Mount Device (SMD)

Applications

• Power Management
• Load Switching
• Battery-Powered Devices
• Portable Electronics
• Industrial and Consumer Electronics

Quality and Reliability The 2N7002ET1G is built with advanced trench technology, providing improved electrical characteristics and reliability. It features a low threshold voltage, making it suitable for low-voltage applications where power efficiency is crucial. The MOSFET also includes built-in protection features for enhanced safety and reliability.

Packaging and Availability

• Packaging: Reel - TR
• Availability: 205,999 pieces
• Minimum Order Quantity: 1,165 pieces
• Order Increment: 1 piece

Pricing and Ordering

• 1,165+: $0.0430/piece
• 2,860+: $0.0350/piece
• 4,415+: $0.0340/piece
• 6,065+: $0.0330/piece
• 7,815+: $0.0320/piece
• 10,345+: $0.0290/piece

For more details and to download the datasheet, please visit our product page.

The 2N7002ET1G is an excellent choice for designers seeking a high-efficiency, fast-switching MOSFET for their electronic applications.