PNP Power Bipolar Transistors
from Nexperia B.V.
PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT61010NY. Features. High thermal power dissipation capability. Suitable for high temperature applications up to 175 °C. Reduced Printed-Circuit Board (PCB) requirements... [See More]
- Polarity: PNP
- VCEO: -100
- hfe: 180 to 330
- IC(max): -10000
from Nexperia B.V.
PNP high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. NPN complement: MJD31CA. Features. High thermal power dissipation capability. High energy efficiency due to less heat generation. Electrically similar to popular MJD31 series. Low... [See More]
- Polarity: PNP
- VCEO: -100
- hfe: 10 to 50
- IC(max): -3000
from Nexperia B.V.
NPN/PNP high power double bipolar transistor in a SOT1205 (LFPAK56D) Surface-Mounted Device (SMD) power plastic package. NPN/NPN complement: PHPT610030NK. PNP/PNP complement: PHPT610030PK. Features. High thermal power dissipation capability. Suitable for high temperature applications up to 175... [See More]
- Polarity: NPN; PNP
- VCEO: 100
- hfe: 150 to 250
- IC(max): 3000