PNP Power Bipolar Transistors

100 V, 10 A PNP high power bipolar transistor -- PHPT61010PYX
from Nexperia B.V.

PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT61010NY. Features. High thermal power dissipation capability. Suitable for high temperature applications up to 175 °C. Reduced Printed-Circuit Board (PCB) requirements... [See More]

  • Polarity: PNP
  • VCEO: -100
  • hfe: 180 to 330
  • IC(max): -10000
100 V, 3 A PNP high power bipolar transistor -- MJD32CAJ
from Nexperia B.V.

PNP high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. NPN complement: MJD31CA. Features. High thermal power dissipation capability. High energy efficiency due to less heat generation. Electrically similar to popular MJD31 series. Low... [See More]

  • Polarity: PNP
  • VCEO: -100
  • hfe: 10 to 50
  • IC(max): -3000
NPN/PNP high power double bipolar transistor -- PHPT610030NPKX
from Nexperia B.V.

NPN/PNP high power double bipolar transistor in a SOT1205 (LFPAK56D) Surface-Mounted Device (SMD) power plastic package. NPN/NPN complement: PHPT610030NK. PNP/PNP complement: PHPT610030PK. Features. High thermal power dissipation capability. Suitable for high temperature applications up to 175... [See More]

  • Polarity: NPN; PNP
  • VCEO: 100
  • hfe: 150 to 250
  • IC(max): 3000