PNP Power Bipolar Transistors

24 Results
100 V, 10 A PNP high power bipolar transistor -- PHPT61010PYX
from Nexperia B.V.

PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT61010NY. Features and benefits. High thermal power dissipation capability. Suitable for high temperature applications up to 175 °C. Reduced Printed-Circuit Board (PCB)... [See More]

  • Polarity: PNP
  • hfe: 180
  • Transistor Grade / Operating Range: Automotive
  • VCEO: -100
2N6438 [2N6438 from Motorola Solutions, Inc.]
from Rochester Electronics

Power Bipolar Transistor, 25A, 120V, PNP, TO-204AA, Metal, 2 Pin [See More]

  • Polarity: PNP
  • Package Type: TO-204AA
100 V, 3 A PNP high power bipolar transistor -- MJD32CAJ
from Nexperia B.V.

PNP high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. NPN complement: MJD31CA. Features and benefits. High thermal power dissipation capability. High energy efficiency due to less heat generation. Electrically similar to popular MJD32... [See More]

  • Polarity: PNP
  • hfe: 25 to 50
  • Transistor Grade / Operating Range: Automotive
  • VCEO: -100
2N6490
from Rochester Electronics

Power Bipolar Transistor, 15A, 60V, PNP [See More]

  • Polarity: PNP
  • Packing Method: Tube; Tube
  • Package Type: TO-220; TO-220AB
100 V, 3 A PNP high power bipolar transistor -- MJPE32CZ
from Nexperia B.V.

PNP high power bipolar transistor in a power SOT1289B (CFP15B) flat lead Surface-Mounted Device (SMD) plastic package. NPN complement: MJPE31C. Features and benefits. High thermal power dissipation capability. High energy efficiency due to less heat generation. Electrically similar to popular MJD32... [See More]

  • Polarity: PNP
  • VCEO: -100
  • hfe: 25
  • IC(max): -3000
2SA1353E [2SA1353E from onsemi]
from Rochester Electronics

Power Bipolar Transistor, 0.1A, 300V, PNP, TO-126, 3 Pin [See More]

  • Polarity: PNP
  • Package Type: TO-126
45 V, 1 A PNP power bipolar transistors -- BCX51TF
from Nexperia B.V.

PNP power transistors in a power SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package. Features and benefits. High collector current capability IC and ICM. Three current gain selections. High power dissipation capability. AEC-Q101 qualified. Applications. Linear voltage regulators. [See More]

  • Polarity: NPN; PNP
  • VCEO: -45
  • hfe: 63 to 250
  • IC(max): -1000
2SA1395-AZ [2SA1395-AZ from Renesas Electronics Corporation]
from Rochester Electronics

Power Bipolar Transistor, 2A, 100V, PNP [See More]

  • Polarity: PNP
  • Package Type: TO-220; TO-220FM
2SA1441(016)-S6-AZ [2SA1441(016)-S6-AZ from Renesas Electronics Corporation]
from Rochester Electronics

Power Bipolar Transistor, PNP [See More]

  • Polarity: PNP
  • Package Type: TO-220; TO-220-3FP
2SA1471S [2SA1471S from onsemi]
from Rochester Electronics

Power Bipolar Transistor, 10A, 60V, PNP, 3 Pin [See More]

  • Polarity: PNP
2SA1741(010)-S20-AZ [2SA1741(010)-S20-AZ from Renesas Electronics Corporation]
from Rochester Electronics

Power Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin [See More]

  • Polarity: PNP
BC51-16PA,115 [BC51-16PA,115 from NXP Semiconductors]
from Rochester Electronics

Power Bipolar Transistor, 1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin [See More]

  • Polarity: PNP
  • Packing Method: Tape Reel; Tape & Reel
  • Package Type: SOT1061
BC869,115 [BC869,115 from Nexperia B.V.]
from Rochester Electronics

Power Bipolar Transistor, 2A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, TO-243AA, Plastic/Epoxy, 3 Pin [See More]

  • Polarity: PNP
  • Packing Method: Tape Reel; Tape & Reel
  • Package Type: SOT89
BCP53-10T1 [BCP53-10T1 from onsemi]
from Rochester Electronics

Power Bipolar Transistor, 1.5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-261AA, Plastic/Epoxy, 4 Pin [See More]

  • Polarity: PNP
  • Packing Method: Tape Reel; Tape & Reel
  • Package Type: TO-261AA
BCX51-10TF [BCX51-10TF from Nexperia B.V.]
from Rochester Electronics

Power Bipolar Transistor, 1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin [See More]

  • Polarity: PNP
  • Packing Method: Tape Reel; Tape & Reel
  • Package Type: SOT89
BD440S [BD440S from onsemi]
from Rochester Electronics

4.0 A, 60 V PNP Power Bipolar Jucntion Transistor [See More]

  • Polarity: PNP
  • Packing Method: Bulk; Bulk
  • Package Type: TO-126-3
BDV64BG [BDV64BG from onsemi]
from Rochester Electronics

Power Bipolar Transistor, 10A, 100V, PNP, TO-247, Plastic/Epoxy, 3 Pin [See More]

  • Polarity: PNP
  • Packing Method: Tube; Tube
  • Package Type: TO-247; TO-247
D45H11G [D45H11G from onsemi]
from Rochester Electronics

Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin [See More]

  • Polarity: PNP
  • Packing Method: Tube; Tube
  • Package Type: TO-220; TO-220
MJD32CAJ [MJD32CAJ from Nexperia B.V.]
from Rochester Electronics

MJD32CA - 100 V, 3 A PNP high power bipolar transistor [See More]

  • Polarity: PNP
  • Packing Method: Tape Reel; Tape & Reel
  • Package Type: SOT428
PBSS5160PAP,115 [PBSS5160PAP,115 from Nexperia B.V.]
from Rochester Electronics

Power Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 2-Element, PNP, Silicon, Plastic/Epoxy, 6 Pin [See More]

  • Polarity: PNP
  • Packing Method: Tape Reel; Tape & Reel
  • Package Type: SOT1118
PBSS5240ZF [PBSS5240ZF from NXP Semiconductors]
from Rochester Electronics

Power Bipolar Transistor, 2A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin [See More]

  • Polarity: PNP
  • Packing Method: Tape Reel; Tape & Reel
  • Package Type: SOT223
PBSS5350D,135 [PBSS5350D,135 from Nexperia B.V.]
from Rochester Electronics

Power Bipolar Transistor, 3A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 6 Pin [See More]

  • Polarity: PNP
  • Packing Method: Tape Reel; Tape & Reel
  • Package Type: SOT457
PBSS5350T,215 [PBSS5350T,215 from NXP Semiconductors]
from Rochester Electronics

Power Bipolar Transistor, 2A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AB, Plastic/Epoxy, 3 Pin [See More]

  • Polarity: PNP
  • Packing Method: Tape Reel; Tape & Reel
  • Package Type: SOT23
POWER BJT, PNP, -30V, -1.5A, SOT-23 - More Details -- 761-2STR2230 [2STR2230 from STMicroelectronics]
from Utmel Electronic Limited

POWER BJT, PNP, -30V, -1.5A, SOT-23 - More Details [See More]

  • Polarity: PNP; PNP
  • VCEO: -30
  • Transistor Technology / Material: SILICON
  • IC(max): 1500