3.3 V MRAM

4 Results
4Mbit Magnetoresistive RAM 8/16bit -- EV2A16A
from Teledyne e2v Semiconductors

Teledyne e2v ’s MRAMs type EV2A16A is an extended-reliability version of the MR2A16A from Everspin. It is the ideal memory solution for applications that must permanently store and retrieve critical data quickly. It perfectly suits the requirements of critical embedded applications such as... [See More]

  • Supply Voltage: 3.3V
  • Density: 32000
  • Package Type: TSOP II; TSOP
  • Number of Words: 262
16Mb MRAM (2Mbx8) -- MR4A08BCMA35
from Everspin Technologies, Inc.

The MR4A08B is a 16,777,216-bit magnetoresistive random access memory (MRAM) device organized as 2,097,152 words of 8 bits. The MR4A08B offers SRAM compatible 35ns read/write timing with unlimited endurance. Data is always non-volatile for greater than 20-years. Data is automatically protected on... [See More]

  • Supply Voltage: 3.3V
  • Density: 16000
  • Package Type: BGA
  • Number of Words: 2000
16Mb MRAM (2Mbx8) -- MR4A08BCYS35
from Everspin Technologies, Inc.

The MR4A08B is a 16,777,216-bit magnetoresistive random access memory (MRAM) device organized as 2,097,152 words of 8 bits. The MR4A08B offers SRAM compatible 35ns read/write timing with unlimited endurance. Data is always non-volatile for greater than 20-years. Data is automatically protected on... [See More]

  • Supply Voltage: 3.3V
  • Density: 16000
  • Package Type: TSOP
  • Number of Words: 2000
1Mb MRAM ( 128Kx8) -- MR0A08BCSO35
from Everspin Technologies, Inc.

The MR0A08B is a 1,048,576-bit magnetoresistive random access memory (MRAM) device organized as 131,072 words of 8 bits. The MR0A08B offers SRAM compatible 35 ns read/write timing with unlimited endurance. Data is always non-volatile for greater than 20-years. Data is automatically protected on... [See More]

  • Supply Voltage: 3.3V
  • Density: 1000
  • Package Type: SOIC
  • Number of Words: 128