TSOP MRAM

MRAM (Magnetoresistive RAM) Memory IC 1Mb (128K x 8) Parallel 35ns 44-TSOP2 [See More]

• Package Type: "44-TSOP (0.400"", 10.16mm Width)"; TSOP
• Supply Voltage: 3V ~ 3.6V

• Density: 1000
• Operating Temperature: -40 to 85

MRAM (Magnetoresistive RAM) Memory IC 16Mb (1M x 16) Parallel 35ns 54-TSOP2 [See More]

• Package Type: "54-TSOP (0.400"", 10.16mm Width)"; TSOP
• Supply Voltage: 3V ~ 3.6V

• Density: 16000
• Operating Temperature: -40 to 85

MRAM (Magnetoresistive RAM) Memory IC 2Mb (128K x 16) Parallel 35ns 44-TSOP2 [See More]

• Package Type: "44-TSOP (0.400"", 10.16mm Width)"; TSOP
• Supply Voltage: 3V ~ 3.6V

• Density: 2000
• Operating Temperature: -40 to 85

MRAM (Magnetoresistive RAM) Memory IC 8Mb (512K x 16) Parallel 35ns 54-TSOP2 [See More]

• Package Type: "54-TSOP (0.400"", 10.16mm Width)"; TSOP
• Supply Voltage: 3V ~ 3.6V

• Density: 8000
• Operating Temperature: -40 to 85

The MR4A08B is a 16,777,216-bit magnetoresistive random access memory (MRAM) device organized as 2,097,152 words of 8 bits. The MR4A08B offers SRAM compatible 35ns read/write timing with unlimited endurance. Data is always non-volatile for greater than 20-years. Data is automatically protected on... [See More]

• Package Type: TSOP
• Number of Words: 2000

• Density: 16000
• Bits per Word: 8

Teledyne e2v ’s MRAMs type EV2A16A is an extended-reliability version of the MR2A16A from Everspin. It is the ideal memory solution for applications that must permanently store and retrieve critical data quickly. It perfectly suits the requirements of critical embedded applications such as... [See More]

• Package Type: TSOP