1064nm Detector Photodiode

Description: LED Microsensor NT LLC is focused on developing and manufacturing optoelectronic devices for the mid-infrared spectral range. The company offers a wide range of Light Emitting Diodes (LEDs), LED arrays and spectral matched Photodiodes (PD) that cover the spectral range from 1600 to 5000 nm,

• Sensitivity: 0.7 to 1.6 A/W
• Active Area Diameter or Length: 0.30000000000000004 to 1 mm
• Dark Current: 10,000 to 25,000,000 nA
• Noise Equivalent Power (NEP): 0.0000000000009 to 0.00000000006 W/Hz^½

Description: Screened detectors with 0% output above 400 nm Quadrant detector available for beam focus monitoring Gallium Phosphate (GaP) Detectors with output up to 400 nm Diffuser lens option available JIC 119-22 is equivalent to the discontinued Perkin Elmer UV10.T2E.10F and JIC 119-22L

• Sensitivity: 0.13 A/W
• Spectral Response Range: 230 to 530 nm
• Active Area Diameter or Length: 1.1 to 3.6 mm
• Active Area Height: 1.1 to 3.6 mm

Description: Marktech offers a large assortment of Photo Detectors ranging from standard silicon detectors including Photo Diodes, Photo Transistors; Avalanche Photodiodes to InP and InGaAs Pin Photodiodes. Our silicon detectors have a spectral sensitivity range in the 400nm to

• Sensitivity: 35 to 50 A/W
• Spectral Response Range: 400 to 1,100 nm
• Active Area Diameter or Length: 0.04 mm
• Active Area Height: 230 mm

Description: Photodiodes 3020 SMD IR Detector 940nm

Description: FCI-020A and FCI-040A with active area sizes of 0.5mm and 1.0mm, are parts of OSI Optoelectronics' large active area IR sensitive silicon detectors exhibiting excellent responsivity at 970nm. These large active area devices are ideal for use in low speed infrared instrumentation and

• Sensitivity: 0.65 A/W
• Spectral Response Range: 1,100 to 1,650 nm
• Active Area Diameter or Length: 0.00051 mm
• Rise Time: 26 ns

Description: High Energy Radiation Detectors" section. A reverse bias can be applied to reduce the capacitance and increase speed of response. In the unbiased mode, these detectors can be used for applications requiring low noise and low drift. These detectors are also excellent choices for

• Spectral Response Range: 200 to 1,100 nm
• Active Area Diameter or Length: 6.78 mm
• Active Area Height: 5.59 mm
• Operating Temperature: -20 to 60 C

Description: The Photop™ Series, combines a photodiode with an operational amplifier in the same package. Photop general-purpose detectors have a spectral range from either 350 nm to 1100 nm or 200 nm to 1100 nm. They have an integrated package ensuring low noise output under a variety of operating

• Sensitivity: 0.65 A/W
• Spectral Response Range: 350 to 1,100 nm
• Active Area Diameter or Length: 2.54 mm
• Operating Temperature: 0 to 70 C

Description: The 1414 High Speed Fiber-Optic Detector shows a flat response in both amplitude and phase up to 25 GHz and are optimized for frequency-domain applications. This near-IR photodetector uses a 25 μm diameter back-illuminated InGaAs Schottky photodiode with peak responsivities of 0.6 A/W

• Receiver Rise Time: 0.014 ns
• Bandwidth: 0 to 25,000 MHz
• Features: Other

Description: The DET-L-GE-R-C Germanium Photovoltaic Detector for LIDA™ houses an unbiased, photovoltaic mode operated photodiode coupled to a trans impedance amplifier. The internal 5 mm diameter active area Germanium photodiode and low-noise trans impedance amplifier provides for excellent

Description: High-speed detector with plastic package The S10784 is a high-speed APC (auto power control) detector developed for monitoring laser diodes with a peak wavelength of 660 nm or 780 nm. Features - High-speed response: 300 MHz typ. (λ=650 nm, VR=2.5 V), 250 MHz typ. (λ=780 nm, VR=2.5 V) -

• Sensitivity: 0.51 A/W
• Spectral Response Range: 340 to 1,040 nm
• Active Area Diameter or Length: 3 mm
• Active Area Height: 3 mm

Description: The Detector-Filter combination series incorporates a filter with a photodiode to achieve a tailored spectral response. OSI Optoelectronics offers a multitude of standard and custom combinations. Upon request, all detector-filter combinations can be provided with a NIST

• Sensitivity: 0.025 A/W
• Spectral Response Range: 200 to 300 nm
• Active Area Diameter or Length: 2.4000000000000004 mm
• Active Area Height: 2.4000000000000004 mm

Description: 1650 nm The F-PD series detector designs are optimized for the single mode telecom wavelengths of 1260 nm to 1610 nm, however, the broad 850 nm to 1650 nm can be covered. F-PD-30-1064 for 1064 nm Pulse Laser Applications The coplanar waveguide photodiode design optimizes speed and

• Bandwidth: 28,000 to 30,000 MHz
• Operating Temperature: 14 to 140 F
• Features: Other
• Receiver Type: PIN

Description: Screened detectors with 0% output above 400 nm Quadrant detector available for beam focus monitoring Gallium Phosphate (GaP) Detectors with output up to 400 nm Diffuser lens option available JIC 119-22 is equivalent to the discontinued Perkin Elmer UV10.T2E.10F and JIC 119-22L

• Spectral Response Range: 210 to 380 nm
• Active Area Diameter or Length: 0.25 to 3.3000000000000003 mm
• Active Area Height: 0.25 to 3.3000000000000003 mm
• Photodiode Package: Leaded, Through Hole Technology (THT)

Description: decades. The serial numbers for the detector and the attenuator are matched to ensure NIST traceability. The 10.3 mm clear aperture with the cross hair will improve the detector alignment to the input optical beam more accurately and help avoid detector overfilling. The

Description: First Sensor offers large-area InGaAs PIN photodiodes with active sensor surfaces up to 3 mm in diameter. The diodes feature low dark currents and high sensitivity up to 1700 nm wavelength. A model enhanced for the visible wavelength range is also available. Housing options include both

• Spectral Response Range: 900 to 1,700 nm
• Active Area Diameter or Length: 1 mm
• Rise Time: 15 ns
• Dark Current: 1 to 10 nA

Description: Optical Sensor 935nm Photo Detector, Logic Output Push-Pull 3-SIP, Side View

• Operating Temperature: -40 to 85 C
• Photodiode Spectral Response: IR

Description: OPTICAL SENSOR (PHOTODETECTOR - "P-N") PHOTODIODE; No. of Pins:2Pins; Diode Case Style:Side Looking; Wavelength of Peak Sensitivity:925nm; Angle of Half Sensitivity ±:55°; Dark Current:0.03µA; Operating Temperature Min:-; MSL:- RoHS Compliant: Yes

Description: This turnkey detector is a low noise, high sensitivity system that exceeds the performance of silicon photodiode systems over the wavelength range of 185 to 800 nm. It has a superior combination of a large, eight mm diameter, aperture and fast response of ten microseconds. The

Description: OPTICAL SENSOR (PHOTODETECTOR - "P-N") PHOTODIODE; No. of Pins:2Pins; Diode Case Style:Radial Leaded; Wavelength of Peak Sensitivity:935nm; Angle of Half Sensitivity ±:45°; Dark Current:1000pA; Operating Temperature Min:-40°C; MSL:- RoHS Compliant: Yes

Description: 0.1% of current output range Measured potential resolution - 0.012 % of potential range Measured current resolution - 0.025 % of current range Spectrometer (SPM) Detector - InGaAs photodiode array 256 pixels TE cooled SPM Pixels - 256 pixels (up to 512 pixels under request) SPM Pixel

• DC Current Range: 0.04 amps
• DC Voltage Range: 4 volts

Description: Screened detectors with 0% output above 400 nm Quadrant detector available for beam focus monitoring Gallium Phosphate (GaP) Detectors with output up to 400 nm Diffuser lens option available JIC 119-22 is equivalent to the discontinued Perkin Elmer UV10.T2E.10F and JIC 119-22L

• Spectral Response Range: 315 to 395 nm
• Operating Temperature: -25 to 85 C
• Photodiode Package: Leaded, Through Hole Technology (THT)
• Photodiode Spectral Response: UV

Description: The 66328 high voltage isolator consists of an 850 nm LED optically coupled to a photodiode driven detector. The isolator provides high isolation and fast switching speeds over the specified temperature range of -40ºC to +100ºC.The isolator is built with hermetic components internally

• Isolation Voltage: 15,000 volts
• Rise Time: 6 µs
• Collector Emitter Breakdown Voltage: 20 volts
• Operating Temperature: -40 to 100 C

Description: The 66280 Optocoupler consists of an 850nm GaAlAs LED optically coupled to a photodiode detector driving a radiation tolerant transistor. This configuration has proven to be highly tolerant to both proton and total dose radiation. Available as commercial or screened. Features: · High

• Isolation Voltage: 500 volts
• Rise Time: 20 µs
• Collector Emitter Breakdown Voltage: 7 volts
• Operating Temperature: -55 to 125 C

Description: under natural and artificial light conditions. Product Features The sensor features a silicon photovoltaic detector mounted in a fully cosine-corrected miniature head. Colored glass filters are used to tailor the silicon photodiode response to the desired quantum response and an

• Operating Temperature: -40 to 65 F
• Measured Wavelength: 400 to 700 nm
• Accuracy: 5 (+/- %)
• Spectral Sensitivity: 5 (µV(or A)/Wm-2)

Description: The HCPL-0300 optocoupler combines an 820 nm AlGaAs photon emitting diode with an integrated high gain photon detector. This combination of Avago designed and manufactured semiconductor devices brings new high performance capabilities to designers of isolated logic and data communication

• Isolation Voltage: 3,750 volts
• Rise Time: 0.04 µs
• Collector Emitter Breakdown Voltage: 3 volts
• Operating Temperature: -40 to 85 C