-
Supplier: Electro Optical Components, Inc.
Description: LED Microsensor NT LLC is focused on developing and manufacturing optoelectronic devices for the mid-infrared spectral range. The company offers a wide range of Light Emitting Diodes (LEDs), LED arrays and spectral matched Photodiodes (PD) that cover the spectral range from 1600 to 5000
- Active Area Diameter or Length: 0.3000 to 1 mm
- Dark Current: 10000 to 2.50E7 nA
- Noise Equivalent Power (NEP): 9.00E-13 to 6.00E-11 W/Hz½
- Photodiode Package / Mounting: Leaded, Through Hole Technology (THT)
-
Supplier: VAST STOCK CO., LIMITED
Description: Photodiodes 3020 SMD IR Detector 940nm
-
Supplier: Electro Optical Components, Inc.
Description: Silicon carbide SiC photodetectors / photodiodes have a spectral response of approximately 210 – 380 nm and are not sensitive to UV radiation outside this region. This makes them ideal detectors in certain applications for monitoring the UV spectrum without the need for solar
- Active Area Diameter or Length: 1.1 to 3.6 mm
- Active Area Height: 1.1 to 3.6 mm
- Photodiode Material: Other
- Photodiode Package / Mounting: Leaded, Through Hole Technology (THT)
-
-
Supplier: OSI Optoelectronics
Description: FCI-020A and FCI-040A with active area sizes of 0.5mm and 1.0mm, are parts of OSI Optoelectronics' large active area IR sensitive silicon detectors exhibiting excellent responsivity at 970nm. These large active area devices are ideal for use in low speed infrared instrumentation and
- Active Area Diameter or Length: 5.10E-4 mm
- Dark Current: 0.1500 nA
- Noise Equivalent Power (NEP): 2.80E-15 W/Hz½
- Operating Temperature: -40 to 75 C
-
Supplier: Marktech Optoelectronics
Description: Marktech offers a large assortment of Photo Detectors ranging from standard silicon detectors including Photo Diodes, Photo Transistors; Avalanche Photodiodes to InP and InGaAs Pin Photodiodes. Our silicon detectors have a spectral sensitivity range in the
- Active Area Diameter or Length: 0.0400 mm
- Active Area Height: 230 mm
- Dark Current: 0.0500 nA
- Operating Temperature: -20 to 85 C
-
Supplier: OSI Optoelectronics
Description: OSI Optoelectronics' 1990 R&D 100 award winning X-UV detector series are a unique class of silicon photodiodes designed for additional sensitivity in the X-Ray region of the electromagnetic spectrum without use of any scintillator crystals or screens. Over a wide range of sensitivity
- Active Area Diameter or Length: 2.57 mm
- Noise Equivalent Power (NEP): 9.10E-15 W/Hz½
- Operating Temperature: -20 to 60 C
- PN, PIN, or Avalanche: PIN Photodiode
-
Supplier: OSI Optoelectronics
Description: OSI Optoelectronics' 1990 R&D 100 award winning X-UV detector series are a unique class of silicon photodiodes designed for additional sensitivity in the X-Ray region of the electromagnetic spectrum without use of any scintillator crystals or screens. Over a wide range of sensitivity
- Active Area Diameter or Length: 11.33 mm
- Noise Equivalent Power (NEP): 4.10E-14 W/Hz½
- Operating Temperature: -20 to 60 C
- PN, PIN, or Avalanche: PIN Photodiode
-
Supplier: OSI Optoelectronics
Description: OSI Optoelectronics' 1990 R&D 100 award winning X-UV detector series are a unique class of silicon photodiodes designed for additional sensitivity in the X-Ray region of the electromagnetic spectrum without use of any scintillator crystals or screens. Over a wide range of sensitivity
- Active Area Diameter or Length: 5 mm
- Noise Equivalent Power (NEP): 1.80E-14 W/Hz½
- Operating Temperature: -20 to 60 C
- PN, PIN, or Avalanche: PIN Photodiode
-
Supplier: Electro Optical Components, Inc.
Description: Silicon carbide SiC photodetectors / photodiodes have a spectral response of approximately 210 – 380 nm and are not sensitive to UV radiation outside this region. This makes them ideal detectors in certain applications for monitoring the UV spectrum without the need for solar
- Active Area Diameter or Length: 0.2500 to 3.3 mm
- Active Area Height: 0.2500 to 3.3 mm
- Photodiode Package / Mounting: Leaded, Through Hole Technology (THT)
- Spectral Response: UV
-
Supplier: Hamamatsu Photonics
Description: High-speed detector with plastic package The S10783 is a high-speed APC (auto power control) detector developed for monitoring laser diodes with a peak wavelength of 660 nm or 780 nm. Features - High-speed response: 300 MHz typ. (?=650 nm, VR=2.5 V), 250 MHz typ.
- Active Area Diameter or Length: 0.8000 mm
- Active Area Height: 0.8000 mm
- Dark Current: 1 nA
- Photodiode Material: Silicon
-
Supplier: Hamamatsu Photonics
Description: High-speed detector with plastic package The S10784 is a high-speed APC (auto power control) detector developed for monitoring laser diodes with a peak wavelength of 660 nm or 780 nm. Features - High-speed response: 300 MHz typ. (?=650 nm, VR=2.5 V), 250 MHz typ.
- Active Area Diameter or Length: 3 mm
- Active Area Height: 3 mm
- Dark Current: 1 nA
- Photodiode Material: Silicon
-
Supplier: First Sensor AG
Description: First Sensor offers large-area InGaAs PIN photodiodes with active sensor surfaces up to 3 mm in diameter. The diodes feature low dark currents and high sensitivity up to 1700 nm wavelength. A model enhanced for the visible wavelength range is also available. Housing options include
- Active Area Diameter or Length: 1 mm
- Dark Current: 1 to 10 nA
- PN, PIN, or Avalanche: PIN Photodiode
- Photodiode Material: Indium Gallium Arsenide
-
Supplier: Marktech Optoelectronics
Description: Transistors; Avalanche Photodiodes to InP and InGaAs Pin Photodiodes. Our silicon detectors have a spectral sensitivity range in the 400nm to 1100nm for applications such as optical switching and sensing requiring high speed, consistency and high reliability.
- Active Area Diameter or Length: 0.1000 mm
- PN, PIN, or Avalanche: PIN Photodiode
- Photodiode Material: Indium Gallium Arsenide
- Photodiode Package / Mounting: Other
-
Supplier: Hamamatsu Photonics
Description: High-speed detector with plastic package The S11062-35GT is a photosensor for high-speed APC (automatic power control) supporting laser diodes with an emission wavelength of 660 nm or 780 nm. It can reduce stray light by shielding the outside of the photosensitive area. Features
- Active Area Diameter or Length: 0.7900 mm
- Active Area Height: 0.7900 mm
- Dark Current: 1 nA
- Photodiode Material: Silicon
-
Supplier: Electro Optical Components, Inc.
Description: Silicon carbide SiC photodetectors / photodiodes have a spectral response of approximately 210 – 380 nm and are not sensitive to UV radiation outside this region. This makes them ideal detectors in certain applications for monitoring the UV spectrum without the need for solar
- Active Area Diameter or Length: 0.2660 to 1 mm
- Active Area Height: 0.2660 to 1 mm
- Photodiode Package / Mounting: Leaded, Through Hole Technology (THT)
- Spectral Response: UV
-
Supplier: Newport MKS
Description: The 819D-SL-3.3-CAL2 is a NIST traceable calibrated integrating sphere detector using a 3.3 inch integrating sphere with a high performance silicon photodetector. The input port size is 0.5 in. diameter and the wavelength range is 400 – 1100 nm. It comes with an SMA fiber optic
- Spectral Response Range: 400 to 1100 nm
-
Supplier: Newport MKS
Description: The 819D-IG-3.3-CAL2 is a NIST traceable calibrated integrating sphere detector using a 3.3 inch integrating sphere with a high performance InGaAs photodetector. The input port size is 0.5 in. diameter and the wavelength range is 800-1650 nm. It comes with an SMA fiber optic connector
- Spectral Response Range: 800 to 1650 nm
-
Supplier: Newport MKS
Description: The 819D-IG-2-CAL2 is a NIST traceable calibrated integrating sphere detector using a 2 in. integrating sphere with a high performance InGaAs photodetector. The input port size is 0.5 in. diameter and the wavelength range is 800-1650 nm. It comes with an SMA fiber optic connector on
- Spectral Response Range: 800 to 1650 nm
-
Supplier: Newport MKS
Description: The 819D-UV-2-CALV2 is a NIST traceable calibrated integrating sphere detector using a 2 inch integrating sphere with a high performance silicon photodetector. The input port size is 0.5 in. diameter and the wavelength range is 200-1100 nm. It comes with an SMA fiber optic connector on
- Spectral Response Range: 200 to 1100 nm
-
Supplier: DigiKey
Description: Optical Sensor 880nm Photo Detector, Logic Output Push-Pull 3-SIP, Side View
- Operating Temperature: -40 to 85 C
- Spectral Response: IR
-
Supplier: DigiKey
Description: Optical Sensor 935nm Photo Detector, Logic Output Push-Pull TO-18 small
- Operating Temperature: -55 to 110 C
- Spectral Response: IR
-
Supplier: DigiKey
Description: Optical Sensor 935nm Photo Detector, Logic Output Push-Pull 3-SIP, Side View
- Operating Temperature: -40 to 85 C
- Spectral Response: IR
-
Supplier: DigiKey
Description: Optical Sensor 935nm Photo Detector, Logic Output Open Collector 3-SIP, Side View
- Operating Temperature: -40 to 85 C
- Spectral Response: IR
-
Supplier: RS Components, Ltd.
Description: The FCI-InGaAs-xxx-x series, from OSI Optoelectronics, are large active area InGaAs photodiodes. They are a range of IR sensitive detectors which offer high responsivity (1100-1620nm). They come in TO-46 or TO-5 packages with a flat window. Suitable applications for this family
- Photodiode Material: Indium Gallium Arsenide
- Photodiode Package / Mounting: Other
- Sensitivity: 0.9500 A/W
- Spectral Response Range: 1100 to 1620 nm
-
Supplier: Micropac Industries, Inc.
Description: The 66329 high voltage isolator consists of an 850 nm LED optically coupled to a photodiode driven detector. The isolator provides high isolation and fast switching speeds over the specified temperature range of -40ºC to +100ºC.The isolator is built with hermetic components
- Collector Emitter Breakdown Voltage: 20 volts
- Isolation Voltage: 25000 volts
- Mounting Option: Through Hole (Plug-in)
- Operating Temperature: -40 to 100 C
-
Supplier: Broadcom Inc.
Description: The HCPL-0300 optocoupler combines an 820 nm AlGaAs photon emitting diode with an integrated high gain photon detector. This combination of Avago designed and manufactured semiconductor devices brings new high performance capabilities to designers of isolated logic and data
- Collector Emitter Breakdown Voltage: 3 volts
- Isolation Voltage: 3750 volts
- Mounting Option: Surface Mount
- Operating Temperature: -40 to 85 C
-
Supplier: RainWise, Inc.
Description: 700 nm are obtained under natural and artificial light conditions. Product Features The sensor features a silicon photovoltaic detector mounted in a fully cosine-corrected miniature head. Colored glass filters are used to tailor the silicon photodiode response to the desired
- Accuracy: 5 (+/- %)
- Instrument Type: Quantum Sensor
- Leveling fixture: Yes
- Measured Wavelength: 400 to 700 nm
-
Supplier: StellarNet, Inc.
Description: StellarNet's miniature fiber optic spectrometers with concave gratings deliver high performance for spectroscopy applications in the UV-VIS wavelength ranges covering 190-850nm (model C), or optionally 280-900nm (model CXR). The instruments are exceptionally robust with no moving
- Application Software Included: Yes
- Computer Interface: Yes
- Computer Interface Options: Serial Interface, Parallel Interface
- Detector Type: Photodiode
-
Supplier: Hamamatsu Photonics
Description: Smooth spectral sensitivity in UV to NIR regions, With variable integration time function for each pixel The S15908-512Q is a self-scanning photodiode array designed speci?cally as a detector for spectroscopy. The scanning circuit operates at low power consumption and is easy
- Sensor Grade / Operating Range: Industrial
-
Supplier: Kipp & Zonen, Inc.
Description: larger size and this requires measurement at longer wavelengths. In addition to the optical system with silicon photo-diode detector of the POM-01, the POM-02 sky radiometer has a second optical system with an Indium Gallium Arsenide infrared detector. The filter wheel has 11
- Operating Temperature Range: -30 to 35 C
- Wavelength Range: 315 to 2200 nm
-
Supplier: RS Components, Ltd.
Description: The TCND5000 is a reflective sensor that includes an infrared emitter and pin photodiode in a surface mount package which blocks visible light. Detector type: PIN Photodiode. Dimensions: 6 x 4.3 x 3.75 mm. Peak operating distance 6mm. Operating range within 20% relative
- Operating Temperature: -40 to 185 F
-
Supplier: RS Components, Ltd.
Description: A range of integrated photodiode ambient light detectors, some with inbuilt ADC and I²C interface to allow light levels to be precisely converted into a digital form. Number of Pins = 6 Mounting Type = Surface Mount Application = Cell Phone, Computer, Digital Camera, Digital
- Package Type / Mounting: Other
- Sensor Type: Light Sensor
-
Supplier: RS Components, Ltd.
Description: The OPF series, from Optek Technology, are a family of fibre optic detectors. They consist of a low noise silicon PIN photodiode within a package designed for fibre optic applications. The OPF series offers high speed and low capacitance, improving the signal to noise ratio for
- Receiver Rise Time: 6 ns
-
Supplier: Yankee Environmental Systems, Inc.
Description: The Multi-Filter Rotating Shadowband Radiometer (Model MFR-7) is a field instrument that simultaneously measures global, diffuse, and direct normal components of spectral solar irradiance. The MFR-7 uses independent interference filter-photodiode combinations, mounted in a temperature
- Device Classification: Sensor System
- Height: 17.5 inch
- Interface Options: Serial Interface
- Measures Solar Radiation: Yes
-
Supplier: ValueTronics International, Inc.
Description: negligible, the batteries are permanently connected to the photodiode circuitry and are only disconnected when an external source is used. Opto-electronic devices such as laser diodes, light emitting diodes, optical waveguides, optical detectors, and electro-optic modulators is
- Form Factor: Hand Held
Find Suppliers by Category Top
Featured Products Top
-
coefficient Built in Preamplifiers optional UV A, B, C, BC & BC2 filters available Screened detectors with 0% output above 400 nm Quadrant detector available for beam focus monitoring (read more)
Browse UV Sensors Datasheets for Electro Optical Components, Inc.
More Information Top
Indicates content that may require registration and/or purchase.
-
http://absimage.aps.org/image/DPP12/MWS_DPP12-2012-001210.pdf
The signal- to-noise expected is ∼0.5 of an equivalent system using Nd:YAG at 1064 nm and avalanche photodiode detectors .
-
An Optimally Integrated Track Recovery System for Aerial Bathymetry
The 1064 nm receiver employs a photodiode detector to acquire returns from the water surface (slant range).
-
Spaceborne laser instruments for high-resolution mapping
The key similarities are the use of Q-switched Nd:YAG laser transmitter and a near-infrared-enhanced Perkin-Elmer silicon avalanche photodiode (APD) detector for the 1064 nm receiver.
-
The Lunar Orbiter Laser Altimeter Investigation on the Lunar Reconnaissance Orbiter Mission
LOLA uses a Q-switched Nd:YAG laser at 1064 nm and a silicon avalanche photodiode detector (SiAPD) to measure the time of flight (TOF) to the lunar sur- face from a nominal 50-km orbit.
-
http://www.atmos-chem-phys.net/8/3593/2008/acp-8-3593-2008.pdf
The 1064 nm channel uses an avalanche photodi- ode detector while the 532 nm channel uses photomultiplier tubes.
-
Lidar Network Monitoring of the Regional Atmospheric Environment
1 mrad Receiver 1064 nm and 532 nm dual polarization Detector Photomultiplier tubes (532 nm ) Avalanche photodiode ( 1064 nm) Data acquisition .
-
Lidar In-Space Technology Experiment: NASA's first in-space lidar system for atmospheric research
The 532 nm and 355 nm channel detectors are photomultiplier tubes, while the 1064 nm channel detector is a silicon avalanche photodiode .
-
A comparison method for spaceborne and ground-based lidar and its application to the CALIPSO lidar
Photomultiplier tubes (PMTs) are used for the 532 nm detectors and an avalanche photodiode (APD) is used for the 1064 nm detector .
-
Lidar
The 1064 - nm channel uses an avalanche pho- todiode (APD) detector with a much wider (1.0-nm) bandpass filter and FOV (475 μrad).
-
On-orbit models of the CALIOP lidar for enabling future mission design
The detector for the 1064 nm cannel is an avalanche photodiode (APD), and the detectors for the parallel and perpendicular 532 nm channels are photomultiplier tubes (PMTs).