12 Volt 6 Amp Diodes

Description: Signal Processing Direct Temperature Measurement Deep Scan Technology Amplitude Level And Ripple Pattern Frequency Analysis Open Or Shorted Diode And Open-Phase Condition Identification DMM Functionality AC/DC Volts Temperature AC/DC Amps Ohm

Description: TVS Diodes / ESD Suppressors 12volts 5uA 150.6 Amps Uni-Dir

• Diode Type: Transient Voltage Suppressor Diodes (TVS)

Description: TVS Diodes / ESD Suppressors 12volts 5uA 150.6 Amps Bi-Dir

• Diode Type: Transient Voltage Suppressor Diodes (TVS)

Description: DIODE, 12-10000 AMPS, 50-7000 VOLTS, 0.75IN NPT, 6IN LENGTH, 1IN THREAD LENGTH. FREE 2 YEAR RADWELL WARRANTY

• Diode Type: General Purpose (PN Junction Diodes)

Description: extended handle provide ease and 6 & 12 volt modes 60 amp high, 40 amp medium & 2 amp low charging rates for use on a variety of batteries 250 amp engine starting assistance Automatic-reset circuit breaker technology protects against overloads

• Charger Type / Applications: Automotive / Electrical Vehicle

Description: POWER DIODE MODULE, 100 AMP, 1.6MV, REPETITIVE REVERSE VOLT VRRM MAX:1600V, FORWARD CURRENT IF(AV):-, FORWARD VOLT VF MAX:1.2V, DIODE MODULE CONFIGURATION:TRIPLE COMMON ANODE, PACKAGING:EACH, PRODUCT RNG:-, NO. OF PHASES:THREE , ROHS COMPLIANT: YES.

• Diode Type: General Purpose (PN Junction Diodes)

Description: sensitive electrical systems 4 Terminals, Dual Contact Contact Action; SPST Volts: 12VDC Recommended with Delphi 56 Series 2-Way Female Connector https://www.youtube. com/embed/bXH9eF6Q8t Y

• DC Coil Voltage: 12 volts
• Operating Temperature: -40 to 257 F
• Pole Specifications: Single Pole (SP)
• Throw Specifications: Single Throw

Description: -Z ViewT angled control panel, slim line chassis and Comfort Walk extended handle provide ease and 6, 12 and 24 Volt modes Multiple high and medium charging rates for use on a variety of batteries 225 amp engine starting assistance Automatic-reset circuit breakers

• Charger Type / Applications: Automotive / Electrical Vehicle

Description: interaction figure of around 40 percent. Relays of this size without magnetic screening would therefore be totally unsuitable for applications where dense packing is required. Pickering Series 113 have a typical interaction figure of 5 percent. 3, 5 and 12 Volt coils are standard, with

• Changeover (CO): 0.0
• Coil Resistance: 650 ohms
• DC Coil Voltage: 12 volts
• Maximum Current: 0.5000 amps

Description: Testing: 12V and 24V charging system tests 12V and 24V starting system tests 12V and 24V diode tests Amp-clamps available (not included) for starting/chargin and current draw tests No. 3168-HD – Same as No. 3167-HD above, but also includes an infrared wireless

Description: accessible battery for easy battery changes 1000 V overload protection on V, ohms, frequency 150 V overload protection on mA, backed-up by 440 mA 1000V fuse 25% Manual Step plus Auto Step and Auto Ramp on mA output Designed to meet 1000 volt IEC 1010 Cat III standards

• Calibrator Style: Hand Held, Other Specific Calibration?
• Process, Environmental, Thermodynamic Properties: Temperature

Description: Mechanical and General Specifications Size: 32 x 87 x 187 mm Weight: 369 g Batteries: Single 9 V Alkaline battery (ANSI/NEDA 1604A or IEC 6LR61) Warranty: 3 years Battery life: 50 hours typical (measurement), 12 hours typical

• Calibrator Style: Hand Held, Other Specific Calibration?
• Process, Environmental, Thermodynamic Properties: Temperature

Description: Low leakage current Schottky barrier rectifier encapsulated in a CFP15B (SOT1289B) power and flat lead Surface-Mounted Device (SMD) plastic package. Features and benefits Low forward voltage Low leakage current High thermal stability and large Safe Operation Area High power capability due to

• Diode Applications: Rectifier Diode, Switching, Low Leakage, Protector, Power Diode
• Diode Type: Schottky Barrier Diodes
• I_F: 6000 mA
• RoHS Compliant: Yes

Description: Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the world's leading suppliers of RF, Wireless, Energy and Power Technologies.

• I_F: 6000 mA

Description: Features 600-Volt Schottky Rectifier Zero Reverse Recovery Current Zero Forward Recovery Voltage High-Frequency Operation Temperature-Independ ent Switching Behavior Extremely Fast Switching Positive Temperature Coefficient

• I_F: 6000 mA

Description: Silicon Carbide Schottky Diode Features 650-Volt Schottky Rectifier Zero Reverse Recovery Current Zero Forward Recovery Voltage High-Frequency Operation Temperature-Independ ent Switching Behavior Extremely Fast Switching

• I_F: 6000 mA

Description: Silicon Carbide Schottky Diode Chip Features 650-Volt Schottky Rectifier Zero Reverse Recovery Zero Forward Recovery High-Frequency Operation Temperature-Independ ent Switching Behavior Extremely Fast Switching Positive Temperature Coefficient on VF

• I_F: 6000 mA

Description: CoolSiC™ Schottky diode 650 V G5 in Thin-PAK 8x8 The CoolSiC™ Schottky diode 650 V, 6 A generation 5 in Thin-PAK 8x8 package presents a leading-edge technology for SiC Schottky Barrier diodes. The Infineon proprietary diffusion soldering process, already introduced with

• Diode Applications: Power Diode
• Diode Type: Schottky Barrier Diodes
• I_F: 6000 mA
• I_R: 3.00E-4 mA

Description: Infineon's CoolSiC™ Schottky diodes 600V G3 feature the industry’s lowest device capacitance for any given current rating, which further enhances overall system efficiency, especially at higher switching frequencies and under low load conditions. The generation 3 is based on the same

• Diode Applications: Power Diode
• Diode Type: Schottky Barrier Diodes
• I_F: 6000 mA
• I_R: 5.00E-4 mA

Description: CoolSiC™ Schottky diode 650 V G5 in TO-220 real2pin The CoolSiC™ Schottky diode 650 V, 6 A generation 5 in TO-220 real2pin package presents a leading-edge technology for SiC Schottky Barrier diodes. The Infineon proprietary diffusion soldering process, already introduced

• Diode Applications: Power Diode
• Diode Type: Schottky Barrier Diodes
• I_F: 6000 mA
• I_R: 3.00E-4 mA

Description: The UJ3D06506TS is a 6 A, 650 V SiC Merged PiN Schottky (MPS) diode in a TO-220-2L package. With zero reverse recovery charge and 175 °C maximum junction temperature, this diode is ideally suited for high frequency and high efficiency power systems with minimum cooling

Description: Unparalleled efficiency and price performance The CoolSiC™ Schottky diode 650V G6 is the leading edge technology from Infineon for the SiC Schottky barrier diodes, fully leveraging all advantages of SiC over silicon. An Infineon proprietary innovative soldering process is

• Diode Applications: Power Diode
• Diode Type: Schottky Barrier Diodes
• I_F: 6000 mA
• I_R: 6.00E-4 mA

Description: DIODE SCHOTTKY 650V 6A D2PAK

• Diode Applications: Power Diode, Other
• Diode Type: Schottky Barrier Diodes, Other
• I_F: 6000 mA
• I_R: 0.0600 mA

Description: BRIDGE RECT 1PHASE 600V 6A GBU

• Diode Type: Other
• I_F: 6000 mA
• I_R: 0.0050 mA
• RoHS Compliant: Yes

Description: SUPER FAST RECOVERY DIODES

• Diode Applications: Other
• Diode Type: Other
• I_F: 6000 mA
• I_R: 0.0100 mA

Description: Bridge Rectifiers 1000V 6A Bridge Rectifier

• Diode Type: Other
• I_F: 6000 mA
• I_R: 5000 mA
• RoHS Compliant: Yes

Description: Wide variety of surface mount and through hole packages

• Diode Applications: Rectifier Diode
• Diode Type: Schottky Barrier Diodes
• I_F: 6000 mA
• I_R: 0.0400 mA

Description: RR601BM4SFH is the high reliability automotive rectifying diode, suitable for general rectification.

• Diode Applications: Rectifier Diode
• I_F: 6000 mA
• RoHS Compliant: Yes
• V_F: 1.1 volts

Description: Benefits: Replace bipolar with unipolar rectifiers Essentially no switching losses Higher efficiency Reduction of heat-sink requirements Parallel devices without thermal runaway Features: 650-volt Schottky

• Diode Type: Schottky Barrier Diodes
• I_F: 6000 mA

Description: Features 650-volt Schottky rectifier Ceramic package provides 2.5-kV isolation Lower thermal resistance than FullPAK Zero reverse recovery current High-frequency operation Temperature-independ ent switching behavior Positive temperature coefficient on VF

• Diode Type: Schottky Barrier Diodes
• I_F: 6000 mA

Description: Benefits Replace bipolar with unipolar rectifiers Essentially no switching losses Higher efficiency Reduction of heat-sink requirements Parallel devices without thermal runaway Features 600-volt Schottky

• Diode Type: Schottky Barrier Diodes
• I_F: 6000 mA

Description: RR601BGE4S is low VF high reliability Rectifier Diode, suitable for general rectification.

• Diode Applications: Rectifier Diode
• I_F: 6000 mA
• RoHS Compliant: Yes
• V_F: 1.1 volts

Description: RR601BM4S is low VF high reliability Rectifier Diode, suitable for general rectification.

• Diode Applications: Rectifier Diode
• I_F: 6000 mA
• RoHS Compliant: Yes
• T_j: -55 to 150 C

Description: RR601BM4SFH is the high reliability Automotive Schottky Barrier Diode, suitable for General rectification.

• Diode Applications: Rectifier Diode
• I_F: 6000 mA
• RoHS Compliant: Yes
• T_j: -55 to 150 C

Description: DIODE ARRAY 10000V 2.5A

• Diode Applications: Rectifier Diode
• V_F: 12 volts
• VR: 10000 volts

Description: Tabbed, molded, and formed lead diodes. Specially designed for use with automatic insertion equipment with increased creepage distance between the anode and cathode, 2kV, 3kV, 5kV and 15kV, 100nS-, 70nS, 50nS, 30nS and High Temperature, 200°C, 2kV, 3kV, and 5kV Diodes. VMI

• Diode Applications: Power Diode, High Voltage
• Diode Type: General Purpose (PN Junction Diodes)
• I_F: 500 mA
• I_R: 1.00E-3 to 0.0250 mA

Description: DIODE MODULE GP 16800V 1.7A

• Diode Applications: Rectifier Diode
• V_F: 12 volts
• VR: 16800 volts

Description: K-series – High voltage, high current epoxy diodes. 1.5 Amps to 3.0 Amps, 100nS, 200nS, 3000nS. VMI offers the most complete range of MIL qualified, high voltage, axial-leaded diodes in the world. To insure that our customers receive the highest quality diodes

• Diode Applications: Power Diode, High Voltage
• Diode Type: General Purpose (PN Junction Diodes)
• I_F: 1500 mA
• I_R: 0.0020 to 0.1000 mA

Description: VMI’s rectifier assemblies are suitable for rugged-environment applications High voltage stacks are axial-leaded, epoxy encapsulated devices. Width and height stays the same, depending on which family (FP, SP, or SPJ), but the length will vary depending on the reverse voltage rating. Check the data

• Diode Applications: Rectifier Diode, High Voltage
• Diode Type: General Purpose (PN Junction Diodes)
• I_F: 10 mA
• I_R: 5.00E-4 to 0.0200 mA

Description: Axial-lead glass-body diodes 2kV and higher. Ranging from 2kV to 20kV Vrwm, and 3000ns to 30ns Trr. VMI offers the most complete range of MIL qualified, high voltage, axial-leaded diodes in the world. To insure that our customers receive the highest quality diodes possible, we

• Diode Applications: Power Diode, High Voltage
• Diode Type: General Purpose (PN Junction Diodes)
• I_F: 100 mA
• I_R: 5.00E-4 to 0.0200 mA

Description: DIODE GEN PURP 12KV 2A MODULE

• Diode Applications: Rectifier Diode
• V_F: 12 volts
• VR: 12000 volts

Description: DIODE GEN PURP 12KV 3A MODULE

• Diode Applications: Rectifier Diode
• V_F: 12 volts
• VR: 12000 volts

Description: SSDI is a world-renowned leader in the design, manufacture, and marketing of semiconductors, assemblies, and modules. As a pioneer semiconductor manufacturer for over 45 years, we have earned and maintained a reputation for setting the highest standards of reliability and performance. This

• Diode Applications: Rectifier Diode
• V_F: 12 volts
• VR: 4000 volts

Description: SSDI is a world-renowned leader in the design, manufacture, and marketing of semiconductors, assemblies, and modules. As a pioneer semiconductor manufacturer for over 45 years, we have earned and maintained a reputation for setting the highest standards of reliability and performance. This

• Diode Applications: Rectifier Diode
• I_R: 0.0050 mA
• V_F: 12 volts
• VR: 5000 volts

Description: DIODE GEN PURP 12KV 12A MODULE

• Diode Applications: Rectifier Diode
• V_F: 12 volts
• VR: 12000 volts

Description: DIODE GEN PURP 12KV 6A MODULE

• Diode Applications: Rectifier Diode
• V_F: 12 volts
• VR: 12000 volts

Description: DIODE GEN PURP 3KV 1MA M1A

• Diode Applications: Rectifier Diode
• V_F: 12 volts
• VR: 3000 volts

Description: ) @ If: 12 V @ 3 A Reverse Recovery Time (trr): 2 µs Current - Reverse Leakage @ Vr: 1 µA @ 10000 V Operating Temperature - Junction: -55°C ~ 150°C Current - Average Rectified (Io) (per Diode): 2.5A Mounting Type: Through Hole Package / Case: Module ECCN

• I_R: 1.00E-3 mA
• T_j: -55 to 150 C
• V_F: 12 volts
• VR: 10000 volts