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Supplier: Hamamatsu Photonics Europe
Description: light. The peak sensitivity wavelength is 254 nm typ. The S12742-254 can be customized to support other peak sensitivity wavelengths such as 340 nm, 560 nm. Features - Si photodiode with interference filter - Monochromatic light (254 nm)
- Sensitivity: 0.018 A/W
- Spectral Response Range: 252 to 256 nm
- Active Area Diameter or Length: 3.6 mm
- Active Area Height: 3.6 mm
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Supplier: OSI Optoelectronics
Description: standard parts. PIN-005D-254F- is a 6 mm2 active area, UV enhanced photodiode-filter combination which utilizes a narrow bandpass filter peaking at 254 nm.
- Sensitivity: 0.025 A/W
- Spectral Response Range: 200 to 300 nm
- Active Area Diameter or Length: 2.4000000000000004 mm
- Active Area Height: 2.4000000000000004 mm
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Supplier: DigiKey
Description: Photodiode 550nm 100ns TO-5 Variant, 2 Leads, Lens Top Metal Can
- Sensitivity: 0.025 A/W
- Rise Time: 100 ns
- Operating Temperature: 0 to 70 C
- Photodiode Package: Through Hole Technology (THT)
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Supplier: Acme Chip Technology Co., Limited
Description: SENSOR PHOTODIODE 254NM TO5
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Supplier: ODG (Origin Data Global)
Description: SENSOR PHOTODIODE 254NM
- Sensor Technology: Optical Linear Encoder
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Supplier: LCSC Electronics Technology (HK) Limited
Description: 60V 940nm ±60° 790nm~1050nm 2nA Plugin,P=2.54mm Photodiodes ROHS
- Spectral Response Range: 790 to 1,050 nm
- Operating Temperature: -40 to 100 C
- Dark Current: 2 nA
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Supplier: Win Source Electronics
Description: Manufacturer: Lite-On Inc. Win Source Part Number: 001707-HSDL-5400#1L1 Packaging: Bulk Mounting: Through Hole Diode Type: PIN Voltage - DC Reverse (Vr) (Max): 40V Viewing Angle: 110° Wavelength: 875nm Spectral Range: 770nm to 1000nm Current - Dark (Typ): 1nA Active Area: 0.15mm2 Categories:
- VR: 40 volts
- Tj: -40 to 85 C
- Features: Other
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Supplier: ODG (Origin Data Global)
Description: 940nm Plugin,P=2.54mm Photodiodes ROHS
- RoHS Compliant: RoHS Compliant
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Supplier: Newport MKS
Description: 818-RAD-UVA and laser radiometer serves as a modern replacement for conventional radiometers, which are typically calibrated for a single wavelength such as 254 nm or 365 nm. This innovative device offers calibration across a wide spectral range, allowing users to input any
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Supplier: Hamamatsu Photonics Europe
Description: 35 element Si photodiode array for UV to NIR The S4111-35Q is a Si photodiode linear array mounted in a ceramic DIP (Dual Inline Package). This photodiode array is primarily developed for low-light-level detection such as spectrophotometry, and cover a wide spectral range from
- Sensitivity: 0.58 A/W
- Spectral Response Range: 190 to 1,100 nm
- Rise Time: 1,200 ns
- Dark Current: 0.01 nA
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Supplier: Electro Optical Components, Inc.
Description: Silicon carbide SiC photodetectors / photodiodes have a spectral response of approximately 210 – 380 nm and are not sensitive to UV radiation outside this region. This makes them ideal detectors in certain applications for monitoring the UV spectrum without the need for solar rejection
- Sensitivity: 0.13 A/W
- Spectral Response Range: 205 to 395 nm
- Active Area Diameter or Length: 0.10000000000000002 to 2.525 mm
- Active Area Height: 5.1000000000000005 mm
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Supplier: RS Components, Ltd.
Description: Silicon photodiode
- Spectral Response Range: 190 to 1,100 nm
- Photodiode Spectral Response: UV
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Supplier: Hamamatsu Photonics Europe
Description: Photodiode array combined with signal processing IC This is a Si photodiode array combined with a signal processing IC chip. Improvement in the signal processing IC chip has achieved higher sensitivity compared to the previous products (S11865/S11866 series). The signal processing IC
- Spectral Response Range: 200 to 1,000 nm
- Array: Array
- Photodiode Material: Silicon
- Photodiode Spectral Response: X-ray
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Supplier: Electro Optical Components, Inc.
Description: Silicon carbide SiC photodetectors / photodiodes have a spectral response of approximately 210 – 380 nm and are not sensitive to UV radiation outside this region. This makes them ideal detectors in certain applications for monitoring the UV spectrum without the need for solar rejection
- Spectral Response Range: 210 to 380 nm
- Active Area Diameter or Length: 0.25 to 3.3000000000000003 mm
- Active Area Height: 0.25 to 3.3000000000000003 mm
- Photodiode Package: Leaded, Through Hole Technology (THT)
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Supplier: Hamamatsu Photonics Europe
Description: Integrates photodiode for precision photometry with low-noise amp (Photosensitive area: 5.8 × 5.8 mm) The C10439 series photodiode modules are high-precision photodetector that integrates a photodiode and a current-to-voltage amplifier. The output from the photodiode
- Spectral Response Range: 190 to 1,100 nm
- Active Area Diameter or Length: 5.8 mm
- Active Area Height: 5.8 mm
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Supplier: Newport MKS
Description: The 819C-UV-2-CALV2 is a NIST traceable calibrated integrating sphere detector using a 2 inch integrating sphere with a high performance silicon photodetector. The input port size is 0.5 in. diameter and the wavelength range is 200-1100 nm. It comes with an SMA fiber optic connector on the
- Spectral Response Range: 200 to 1,100 nm
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Supplier: Electro Optical Components, Inc.
Description: Silicon carbide SiC photodetectors / photodiodes have a spectral response of approximately 210 – 380 nm and are not sensitive to UV radiation outside this region. This makes them ideal detectors in certain applications for monitoring the UV spectrum without the need for solar rejection
- Sensitivity: 0.13 A/W
- Spectral Response Range: 230 to 530 nm
- Active Area Diameter or Length: 1.1 to 3.6 mm
- Active Area Height: 1.1 to 3.6 mm
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Supplier: Newport MKS
Description: The 819D-UV-5.3-CAL is a NIST traceable calibrated integrating sphere detector using a 5.3 inch integrating sphere with a high performance silicon photodetector. The input port size is 0.5 in. diameter and the wavelength range is 200 – 1100 nm. For a very high power level, elevated
- Spectral Response Range: 200 to 1,100 nm
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Supplier: Newport MKS
Description: The 819D-UV-2-CALV2 is a NIST traceable calibrated integrating sphere detector using a 2 inch integrating sphere with a high performance silicon photodetector. The input port size is 0.5 in. diameter and the wavelength range is 200-1100 nm. It comes with an SMA fiber optic connector on the
- Spectral Response Range: 200 to 1,100 nm
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Supplier: OSI Optoelectronics
Description: OSI Optoelectronics' 1990 R&D 100 award winning X-UV detector series are a unique class of silicon photodiodes designed for additional sensitivity in the X-Ray region of the electromagnetic spectrum without use of any scintillator crystals or screens. Over a wide range of sensitivity from 200
- Spectral Response Range: 200 to 1,100 nm
- Active Area Diameter or Length: 6.78 mm
- Active Area Height: 5.59 mm
- Operating Temperature: -20 to 60 C
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Supplier: Ophir-Spiricon Inc.
Description: Automatic dynamic cancellation of up to 98% of background light
- Spectral Response Range: 200 to 1,100 nm
- Active Area Diameter or Length: 10.000000000000002 mm
- Active Area Height: 10.000000000000002 mm
- Rise Time: 200,000,000 ns
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Supplier: Allied Electronics, Inc.
Description: SILICON PHOTODIODES
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Supplier: OSI Optoelectronics
Description: is especially desirable if blocking the near IR region of the spectrum is necessary. UVD devices peak at 970 nm and UVE devices at 720 nm (see graph). Both series may be biased for lower capacitance, faster response and wider dynamic range. Or they may be operated in the photovoltaic
- Sensitivity: 0.14 A/W
- Spectral Response Range: 200 to 1,100 nm
- Active Area Diameter or Length: 6.6000000000000005 mm
- Active Area Height: 5.33 mm
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Supplier: Ophir-Spiricon Inc.
Description: General use for large aperture pulsed lasers
- Spectral Response Range: 150 to 20,000 nm
- Active Area Diameter or Length: 46.00000000000001 mm
- Photodiode Spectral Response: IR, UV, Visible
- Features: Other
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Supplier: Ophir-Spiricon Inc.
Description: Thermal head for average power from 60 um to 10 KW
- Spectral Response Range: 190 to 20,000 nm
- Active Area Diameter or Length: 29.000000000000004 mm
- Rise Time: 1,500,000,000 ns
- Photodiode Spectral Response: IR, UV, Visible
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Supplier: OSI Optoelectronics
Description: Multichannel array photodetectors consist of a number of single element photodiodes laid adjacent to each other forming a one-dimensional sensing area common cathode substrate. They can perform simultaneous measurements of a moving beam or beams of many wavelengths. They feature low
- Sensitivity: 0.5 A/W
- Spectral Response Range: 200 to 1,100 nm
- Active Area Diameter or Length: 6.449999999999999 mm
- Active Area Height: 0.28 mm
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Supplier: Ophir-Spiricon Inc.
Description: Thermal head for medium power to 300 W
- Spectral Response Range: 250 to 2,940 nm
- Active Area Diameter or Length: 29.000000000000004 mm
- Rise Time: 1,500,000,000 ns
- Photodiode Spectral Response: IR, UV, Visible
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Does permanent carotid artery occlusion produce a ‘preconditioning‐like’ effect towards more severe hypotension in energy metabolites? Role of cerebral adenosi...
Absorbance of the column eluate was monitored continuously at 254 nm using photodiode array detection.
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Development of a stability-indicating HPLC method of etifoxine with characterization of degradation products by LC-MS/TOF, 1H and 13C NMR.
Detection is made at 254nm by photodiode array detector and mass spectrometry.
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Nonprotein amino acids in edible lentil and garden pea seedlings
The amino acids were detected by their absorption at 254nm with photodiode array detector.
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Application of conventional UV, photodiode array (PDA) and fluorescence (FL) detection to analysis of phenolic acids in plant material and pharmaceutical prepa...
To obtain precise, accurate and validated results of qualitative and quantitative analysis, ultraviolet (at lambda= 254 nm ), photodiode array (at lambda=254 and 280 nm) and fluorescence (at lambda(Ex)=230 or 265 nm and lambda(Em)=350 nm) detection was used.
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Calibration of 254-nm irradiance based on the silicon photodiode self-calibration technique.
The absolute responsivity of silicon photodiodes at 254 nm was determined by the self-calibration technique at 633 nm combined with the relative spectral responsivity measurement in the 220-780-nm region based on a standard thermal detector.
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A narrow-band photoluminescent optical fibre sensor for the detection of
high-intensity germicidal ultraviolet radiation (254 nm) from a microwave plasma
ultra...
The UV photodiode and 254 nm filter are expensive and need to be excessively shielded from the surrounding microwaves, resulting in bulky packaging.
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Surface nitridation of silicon nano‐particles using double multi‐hollow discharge plasma CVD
To investigate luminescent property of Si nano-particles related to quantum size effect, PL measurement was per- formed using a UV photodiode at 254 nm (4.8 eV).
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Kinetics of oxygen discharges and I(2P1/2) excitation for EOIL
The reference and sample detectors are UV photodiodes with 254 nm interference filters.
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Production of metastable singlet oxygen in the reaction of nitric oxide with active oxygen
The reference and sample detectors are UV photodiodes with 254 nm interference filters.
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Thiazole‐Based γ‐Building Blocks as Reverse‐Turn Mimetic to Design a Gramicidin S Analogue: Conformational and Biological Evaluation
Detection was done at 214 and 254 nm using a photodiode array detector.