Products/Services for FET Infinite Impedance Detector
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Metal-Oxide Semiconductor FET (MOSFET) - (362 companies)...all FETs, are similar to bipolar junction transistors (BJT) with a few major differences: FETs are voltage-controlled as opposed to current-controlled BJTs. FETs have higher input impedance, while BJTs have higher gain. FETs are less sensitive... -
Impedance Matching Networks - (25 companies)Impedance matching networks are electrical circuits which, when connected between two networks, match the output impedance of the source (the first network) to the input impedance of the load (the receiving or second network). The purpose... -
RF Phase Detectors and Comparators - (55 companies)RF phase detectors and comparators are circuits or instruments that provide a DC output voltage proportional to the difference in phase between two RF signals. They include local oscillator (LO), radio frequency (RF), and intermediate frequency... -
Heat Detectors - (104 companies)Heat detectors are fire detection devices that sense heat produced by combustion. Heat detectors can trigger an alarm when they detect rapid temperature rise or reach a preset temperature. Heat detectors are fire detection devices that sense heat... -
GC Detectors - (38 companies)Gas chromatography detectors (GC detectors) identify solutes as they exit the chromatographic column. A chromatogram is generated plotting the signal versus time. Gas chromatography detectors (GC detectors) identify solutes as they exit... -
Flame Detectors - (182 companies)Flame detectors monitor and analyze incoming radiation at selected wavelengths. Flame detectors use optical sensors working at specific spectral ranges (usually narrowband) to record the incoming radiation at the selected wavelengths. Typically, 30...
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Smoke Detectors - (260 companies)Smoke detectors are designed to sense the products of combustion. Common types include ionization chambers and photoelectric devices. Smoke detectors are designed to sense the products of combustion. They are designed for commercial, industrial...
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HPLC Detectors - (49 companies)High performance liquid chromatograph (HPLC) detectors pass a beam of light through a column effluent as the fluid passes through a low-volume flow cell. Variations in light intensity are recorded and a chromatograph is generated. HPLC detectors use...
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Radiation Detectors - (204 companies)Radiation detectors are used for medical diagnoses, radioactive dating measurements, and measurements of background radiation, activity levels and radiation doses. Radiation detectors are devices used to detect, track, and identify ionized radiation...
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Liquid Leak Detectors - (257 companies)Liquid leak detectors sense when a liquid is leaking from a pipe, tank, or other receptacle. Liquid leak detectors sense when a liquid is leaking from a pipe, tank, or other receptacle. Leaks are often conceptualized as being small, round defects...
Product News
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Norlok Technology, Inc.
Machines that offer infinite possibilities powered machines that are safe, reliable and economical. - Infinite floor-mounted, portable and custom product designs. - Affordable pricing for low investment and faster payback. - Versatility, strength and endurance. Products like the SURELOK III, SURELOK II, LETTERLOK and WATSON are clinching machines unique to our brand and major manufacturers and small shops from all over the world rely on these leading machines to get the job done, and get it done right. And when you can 't find the machine... (read more)Browse Presses (metalworking) Datasheets for Norlok Technology, Inc. -
Advanced Linear Devices, Inc.
High-Impedance MOSFET Array for Analog Systems The ALD1116 from Advanced Linear Devices is a dual N-channel enhancement-mode MOSFET array designed for precision in analog circuits. It excels in low-frequency and near-DC conditions, making it ideal for a broad range of analog applications. The device features a dual N-channel enhancement mode with matched transistor pairs, which reduces offset voltage and ensures differential thermal response. Key attributes of the device include high input impedance of 1014?, low input capacitance... (read more)Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Advanced Linear Devices, Inc. -
Nexperia B.V.
E-mode GaN FETs Announcing the launch of e-mode GaN FETs for low & high voltage applications. Nexperia 's new portfolio includes two <= 150 V rated devices (3.2 m O and 7 m O) in WLCSP8 and FCLGA packages, as well as five 650 V rated devices, with RDS(on) values between 80 m O - 190 m O, in a choice of DFN 5x6 mm and DFN 8x8 mm packages. Nexperia e-mode GaN FETs provide the ideal balance between switching performance and robustness, for use in industrial and consumer applications. (read more)Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Nexperia B.V. -
Triad Magnetics
Miniature Impedance Matching Transformers SP series miniature impedance matching transformers. Triad's high reliability audio transformers provide the durability and precision required in today's demanding designs. Our transformers are available for many applications, including mil-aero, medical and pro audio. Follow Us: YouTube. LinkedIn. Facebook. Our Blog. Watch > >Triad Magnetics Company Overview. Triad Magnetics. For over 80 years, consumer, commercial and industrial electronic devices have relied on innovative magnetics... (read more)Browse Audio Transformers Datasheets for Triad Magnetics -
Remcom (USA)
Impedance Tuner Matching in XFdtd Impedance and aperture tuners allow RF and antenna engineers to support numerous frequency bands with a single antenna. This is accomplished through software-controlled chips which configure the antenna to operate in multiple bands or modes of operation. Remcom 's XFdtd is a full-wave electromagnetic simulation tool that contains an integrated schematic editor and circuit solver. The electromagnetic simulation accounts for the full-wave interactions between the antenna, PCB, housing... (read more)Browse Finite-difference time-domain (FDTD) Software Datasheets for Remcom (USA) -
Nexperia B.V.
MOSFET & GaN FET Application Handbook Written by engineers - for engineers - we share expertise and learnings that our engineering teams have built up over many years of helping customers in a variety of sectors take their applications from initial concept, though prototyping and on into final production. With over 600 pages of useful guidance on common topics and issues that the design engineer is likely to encounter, the handbook provides insight into the sometimes confusing and complex behaviour of MOSFETs and Power GaN FETs... (read more) -
DigiKey
LTC7893 Synchronous Boost Controller for GaN FETs The Analog Devices LTC7893 synchronous boost controller drives all N-channel synchronous gallium nitride (GaN) field-effect transistor (FET) power stages from output voltages up to 100 V. The LTC7893 solves many of the challenges traditionally faced when using GaN FETs. This high-performance step-up DC/DC switching regulator controller simplifies the application design while requiring no protection diodes and no other additional external components compared to a silicon metal-oxide... (read more)Browse IC Switching Voltage Regulators Datasheets for DigiKey -
Nexperia B.V.
GaN FETs in compact SMD packaging - CCPAK Bringing 20 years ' expertise in high-quality, robust SMD packaging to the GaN FET portfolio, we adopt proven technology to give industry-leading performance in a truly innovative package. CCPAK's copper-clip cascode design optimizes electrical and thermal performance, improves device reliability and reduces parasitic losses. Offered in both top-side (CCPAK1212i) and bottom-side cooled (CCPAK1212) package designs. The GAN039-650NTB, a 33 m O (typ.) Gallium Nitride (GaN) FET within... (read more) -
Nexperia B.V.
Nexperia expands 650V GaN FET portfolio Nexperia announced the expanded portfolio of 650 V industrial-grade high-power GaN FETs for demanding power conversion applications. The portfolio includes devices in 35 m O, 50 m O and 70 m O, offered in industry-standard TO-247-3, TO-247-4, TOLL and TOLT packages. The extended portfolio provides power engineers with greater flexibility to balance efficiency, thermal performance and power density across high-power applications, including datacenter and telecom power supplies, renewable energy... (read more)Browse Transistors Datasheets for Nexperia B.V. -
Dexter Research Center, Inc.
High Temperature Infrared Detector Dexter Research Center announces the availability of its new ST60 High Temperature Detectors. The specially constructed MEMS based thermopiles can withstand operating temperatures of 300 C with silicon windows and 225 with coated windows. The silicon-based detectors are available in TO-5 packages with an active are of 0.61mm x 0.61mm. The new High Temperature detector offers exciting performance opportunities in non-contact temperature measurement applications such as work piece monitoring... (read more)Browse Noncontact Infrared Temperature Sensors Datasheets for Dexter Research Center, Inc.
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Indium Antimonide Detectors For Ground-Based Astronomy
By cooling the detector and feedback resistor to 4 K, the Johnson noise from these components is decreased to the point that FET input noise predominates above a few Hz for Rf 2. The detector impedance is essentially infinite at this temperature.
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Noise characteristics of bootstrapped photovoltaic and photoconductive detectors
, where Id S the photoinduced current and Z is the feedback impedance . … op-amp is ideal for our purpose if both its input resistance andopen-loop gain are infinite . FET input op-amps are widely used, their input resistance is about 1013 Q, it is at least 3 decades higher than the greatest available feedback resistance or shunt resistance of any great area detector .
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Subharmonic mixing at 0.6 THz in an AlGaAs/InGaAs/AlGaAs field effect transistor
The response of a FET detector when illuminated by THz radiation depends on the rectification of THz potential differences generated by the antenna structure between the three terminals. This strategy provides a THz-oscillating charge density in the channel, although in the presence of severe mismatch of the antenna with its load, constituted by the gate-to-channel capacitance, with an ideally infinite real part of the impedance .
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Fiber-optical transmission between 0.8 and 1.4 µm
end with aload resistance RL chosen such that the total noise current is twicethat which would bepresent if the load impedance were infinite . … 3 ym range, at bit rates below 10 Mbit/s, the shotnoise from the detector leakage current is … The choiceof FET ’s or bipolar transistors is made on the basis of minimumnoise,resultingin the use …
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Handbook Of Biological Confocal Microscopy
Clearly the performance of the entire image detector will depend crucially on the capabilities of this amplifier. … capacitor (the “read node”) and then measure the voltage on this capacitor with a high impedance amplifier. As a field-effect transistor ( FET ) has an almost- infinite input imped- ance, it is ideal for this purpose and in fact, its existence makes charge-amplification possible.
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A new structure for a six-port reflectometer using a silicon MOSFET for power measurement
The FET detectors are less sensitive to temperature variation than a biased Schottky diode detector [9] and their effective noise voltage, 600 nV/Hz, is four times as high as the FETnoise level. In the ideal case where the power divider and the phase shifter are perfectly matched and the input impedance of the transistor detector is infinite , .
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Theoretical limitations of broadband matching networks in PIN-FET receivers
In high-speed optical receivers, PIN photodiodes are widely used as electro-optical detectors . In the front-end amplifier stage FETs show the best noise performance because of their high input impedance and their low noise figure. … paper which answers the question what performance can be achieved by an optimum infinite order matching network.
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Bit error rate and system limitations on the storage capacity of volume holographic memory systems
Such a load resistor requires a high input imped- ance amplifier such as a low noise high sensitivity field effect transistor FET bipolar transistor amplifier.22 The capacitance of the FET amplifier is of the order of few picofarads, which makes this … The bits in a page are detected using an array of pin detectors with dark current id … are fed into an FET amplifier whose input resistance is very large or infinite and its capacitance …
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The detector signal processing chain of the ISO long wavelength spectrometer
… is the Integrating Amplifier 0A), which is equivalent to a TIA with an infinite value of RF. In the IA, the detector photocurrent charges up a capacitance at the amplifier input. The FETs are heated to the optimum temperature of about 60 K by passing the appropriate current … The output impedance of the JF4 is about 100 k.O. The detector current is integrated at …
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Source follower or charge amplifier? An experimental comparison using a detector with integrated electronics
In the ideal case of infinite dc loop gain (achievable when gm R’ + oo),the gain is determined only by the value of the feedback capacitance C f on which all the charge collected by the detector is deposited, because the feedback … … the capacitances seen by the input node to which the gate of the FET is connected, where … … is then transferred unchanged to the source (output) and made available at low impedance to the following …
