Products/Services for MOSFET Blf278 FM
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Transistors - (919 companies)Transistors are electronic devices made of semiconductor material that amplify a signal or open or close a circuit.Transistor TypePolarityPackage Type -
Power MOSFET - (239 companies)Power MOSFETs are majority carrier devices which have high input impedance and do not exhibit minority carrier storage effects, thermal runaway, or secondary breakdown. Power MOSFETs have higher breakdown voltages than bipolar junction transistors... -
RF MOSFET Transistors - (92 companies)MOSFET RF transistors are metal-oxide semiconductor field-effect transistors (MOSFETs) that are designed to handle high-power RF signals from devices such as stereo amplifiers, radio transmitters, TV monitors, etc. MOSFET RF transistors... -
Metal-Oxide Semiconductor FET (MOSFET) - (362 companies)Metal-oxide semiconductor field-effect transistors (MOSFETs) are electronic switching devices with a conducting channel as the output. An electrode called a gate controls the width of the channel and determines how well the MOSFET conducts. Metal... -
Radio Receiver ICs - (59 companies)Radio receiver ICs support worldwide radio band requirements, including frequency modulation (FM), FM radio data system (RDS), amplitude modulation (AM), long wave (LW), short wave (SW), and weather bands. These integrated circuits (ICs... -
Gate Drivers - (222 companies)Gate drivers are electronic circuits that apply correct power levels to metal-oxide field-effect transistors (MOSFETs) and insulated gate bipolar transistors (IGBTs). With power-MOSFETs, gate drivers can be implemented as transformers, discrete...
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AC-DC Converter Chips - (123 companies)AC to DC converter chips transfer an AC input into DC power using switching (MOSFET, IGBT) or rectification (diodes, Schottky diodes). How to Select AC to DC Converter Chips. Image Credits: Digi-Key Corporation and Texas Instruments. AC DC converter...
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RF Transmitters - (313 companies)...the baseband signal to vary the amplitude or height of the carrier wave to create the desired information content. Frequency modulation (FM) causes the instantaneous frequency of a sine wave carrier to depart from the center frequency by an amount...
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Power Amplifiers - (191 companies)...high power amplifiers. audio power amplifiers. power acoustic amplifiers. microwave amplifiers. MOSFET power amplifiers. An RF power amplifier is used to amplify radio frequency (RF) transmissions. A high power amplifier is used to amplify high...
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Insulated Gate Bipolar Transistors (IGBT) - (204 companies)Insulated gate bipolar transistors (IGBT) are bipolar transistors with an insulated gate. They combine the advantages of the bipolar transistor (high voltage and current) with the advantages of the MOSFET (low power consumption and high switching...
Product News
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United Electric Controls Company
FM certified explosion-proof temperature sensors UE 's Applied Sensor Technologies division is adding three FM certified explosion-proof styles to its temperature sensor portfolio. The styles are available as a 100 O RTD or mineral insulated thermocouple. FM certification for hazardous areas applies to the complete assembly - both sensor and terminal head. This is an important distinction since common practice has been to pair an explosion proof rated terminal head with an unrated RTD or thermocouple, assuming suitability for hazardous... (read more)Browse RTD Temperature Transmitters Datasheets for United Electric Controls Company -
Assured Automation
FM Fire-Safe Thermal Shutoff Ball Valves Assured Automation's FM Fire-Safe Thermal & Electro-Thermal ball & butterfly valve assemblies these valves are suitable for flammable gas or liquid applications. The thermal links, which respond to temperature changes, automatically close or open the valve at specific trigger temperatures. Additionally, a manual lever or gear operator is available to operate the valve manually without interfering with the fusible link. Assured Automation makes it easy to configure the FM FIre-Safe Shutoff... (read more) -
Nexperia B.V.
DFN0603 MOSFETs Nexperia's new package DFN0603, the market's smallest DFN packaged MOSFET. This new ultra-small package allows designers to achieve more performance in a smaller footprint, with a 74% reduction in RDS(on) as well as using 13% less space when comparing to the industry's next smallest package (DFN0604). These benefits mean the package is the perfect fit for next generation portables, wearables and mobile devices. (read more)Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Nexperia B.V. -
MSA Safety
Senscient ELDS FM Approved Open Path Gas Detector The new Senscient ELDS TM methane open path gas detector has obtained Factory Mutual (FM) approval for use in hazardous areas including the stringent FM open path, combustible gas performance approval (FM 6325). It meets the demanding requirements of the oil and gas industry whether that be on or offshore including gas distribution facilities. A 0-1 LFL.m measuring range offers faster speed of response and initiation of executive actions than any other open path, flammable gas detector... (read more)Browse Gas Instruments Datasheets for MSA Safety -
Nexperia B.V.
LFPAK56D Power MOSFETs Packing even more into the power-SO8 footprint, the LFPAK56D fits 2 MOSFETs into one robust package without compromising on performance. Allowing customers to optimise their design and apply tighter tolerance in operation. Ideal for space constrained applications, such as portable power tools, and hand-held appliances. (read more) -
Win Source Electronics
FDS6681Z MOSFET for Power Control Looking for a reliable MOSFET for efficient power and load management?. The FDS6681Z N-channel MOSFET is designed for low- to medium-voltage power systems where efficiency, thermal stability, and reliable switching are critical. Its low RDS(on) helps reduce conduction losses and heat generation, while moderate gate drive requirements simplify integration into power management and control circuits. Key Features: Low RDS(on) for reduced power loss. Efficient load switching and power path control... (read more)Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Win Source Electronics -
New Yorker Electronics Co., Inc.
New High Efficiency MOSFETs Vishay introduces the SiHK050N65E, an advanced Gen 4.5 650 V E Series power MOSFET delivering superior efficiency for telecom, industrial, and computing applications. This n-channel MOSFET achieves 48.2% lower on-resistance and 65.4% improved resistance times gate charge FOM compared to previous generations. Built on E Series superjunction technology, the SiHK050N65E features a typical on-resistance of just 0.048 O at 10 V, enabling higher power ratings for applications exceeding 6 kW. With 50... (read more) -
Win Source Electronics
High-Popularity MOSFET - BSS123NH6327XTSA1 Infineon Technologies BSS123NH6327XTSA1 is an OptiMOS TM product suitable for various discrete semiconductor applications. Detailed Description: Operating Temperature Range: -55 C to 150 C (TJ). Package: TO-236-3, SC-59, SOT-23-3. Max Gate-Source Voltage: +-20V. Max Input Capacitance: 5305pF @ 13V. Features: N-Channel MOSFET, surface mount. High-popularity product, balanced supply and demand. Suitable for discrete semiconductor products. Applications: Communication equipment. Power management... (read more)Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Win Source Electronics -
Nexperia B.V.
Nexperia CCPAK Power MOSFETs Nexperia today announced the launch of 16 new 80 V and 100 V power MOSFETs in the innovative copper-clip CCPAK1212 package, delivering industry-leading power density and outright performance. The innovative copper-clip design provides high current conduction, reduced parasitic inductance, and excellent thermal performance. These features make the devices ideal for motor control, power supplies, renewable energy systems, and other power-hungry applications. The range also includes... (read more)Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Nexperia B.V. -
Win Source Electronics
2N7002ET1G N-Channel MOSFET Product Overview The 2N7002ET1G from ON Semiconductor is a versatile N-Channel MOSFET designed to meet the needs of a wide range of electronic applications, offering high performance and efficiency. Key Features. Drain-Source Breakdown Voltage: 60V. Continuous Drain Current: 260mA at 25 C. Gate-Source Threshold Voltage: 2.5V @ 250 mA. Maximum Rds On: 2.5 Ohm @ 240mA, 10V. Max Gate Charge: 0.81nC @ 5V. Max Input Capacitance: 26.7pF @ 25V. Fast Switching Speed: Turn-on delay time of 3ns, Turn-off... (read more)Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Win Source Electronics
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http://www.nxp.com/documents/handbook/RF_Fundamentals.pdf
… portable and mobile radios, base stations (except those for the 900 MHz band) and FM broadcast transmitters. For bipolar transistors, no biasing is required, i.e. VBE = 0, while MOSFETS are used with very … A good example is the BLF278 which at 108 MHz in class-B gives 70% efficiency at …
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http://www.nxp.com/documents/handbook/SC19_POWER_AMPL_DESIGN_1.pdf
… portable and mobile radios, base stations (except those for the 900 MHz band) and FM broadcast transmitters. For bipolar transistors, no biasing is required, i.e. VBE = 0, while MOSFETS are used with very … A good example is the BLF278 which at 108 MHz in class-B gives 70% efficiency at …
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The 101 MHz amplifier system of the new CERN Lead Injector
The predriver, a 400 W transistor amplifier, uses the Valvo transistors BLF278 . This tube has been devel- oped for 20 kW FM -transmitters and is operated cathode driven with … … point to NA-B during the rf-pulse by a high voltage power- mosfet tran- sistor, while …
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The Novel 3 Way Doherty - YouTube
• Unbreakable 1000W FM Amplifier BLF188XR : Short-Circuit Test - Duration: 11:49. by Koko RF-KIT 8 … • NXP Power Mosfets , Avalanche Operation Explained - NXP Quick Learning 41 - Duration: 8:25. by NXP Semiconductors … • PLL Mister.X Module PA300 BLF278 - Duration: 5:24. by bunk wawan 358 views .
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RF Power Amplifiers
For exam- ple, if f > 5 fm , the spurious components falling in the passband of the output … MOSFETs usually withstand direct and inverse gate-to- source voltages of 20…30 volts. Data Sheet BLF278 VHF Push-Pull Power MOS Transistor.
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http://www.nxp.com/documents/selection_guide/75016952.pdf
BLF278 MOSFET 5V`Silicon`RF` switch SOT23 FM RADIO TRANSCEIVER .
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http://www.nxp.com/documents/selection_guide/75016687.pdf
BLF278 Field Effect Transistor FM Monolithic Microwave Integrated Circuit MOSFET Metal–Oxide–Semiconductor Field Effect Transistor MPA .
