Beam Lead Pin Diode

Description: The SemiGen SBL 2000 series Beam Lead Pin Diodes feature fast switching speeds at both low capacitance and resistance. Beam Lead Pin Diodes have high levels of mechanical strength and stability during assembly. These diodes are suitable

• P_D: 250 milliwatts
• Features: PIN Diodes, Switching

Description: Skyworks’ Silicon Mesa Beam Lead PIN diode is surrounded by a glass frame for superior strength and electrical performance that surpasses the standard beam lead PINs. The DSM8100-000 is designed for low resistance, low capacitance and fast switching

• Features: Limiter, PIN Diodes

Description: DSG9500-000 is ideal for microstrip or stripline circuits and for circuits requiring high isolation from a series mounted diode such as broad band multi-throw switches, phase shifters, limiters, attenuators and modulators.

• Features: Limiter, PIN Diodes

Description: For use in stripline, coplanar waveguide, or microstrip circuits

• V_F: 1.1 volts
• I_F: 50 mA
• VR: 50 volts
• I_R: 100 mA

Description: The HPND-4005 beamlead PIN diode is designed for use in stripline or microstrip circuits. Applications include Switching, attenuating, phase shifting, limiting, and modulating at microwave frequencies. The extremely low capacitance of this device makes it ideal for circuits requiring

• V_F: 1 volts
• I_F: 20 mA
• VR: 30 volts
• I_R: 100 mA

Description: DSG9500-000: Planar Beam Lead PIN Diode

• VR: 100 volts
• Operating Frequency: 1,000 to 18,000 MHz
• C_T: 0.025 pF
• Features: PIN Diodes, RF Diodes, Single

Description: Skyworks beam-lead silicon Schottky barrier mixer diodes are designed for applications through 40 GHz. The beam-lead design reduces the problem of bonding to the very small area characteristic of the low capacitance junctions. Beam-lead Schottky

• Applications: Mixer
• Features: Schottky Barrier Diodes

Description: IC RF PIN DIODE BEAM LEAD SW

• T_j: -65 to 150 C
• C_T: 0.045 pF
• Features: Other, PIN Diodes, RF Diodes

Description: DIODE,PIN,BEAM_LEAD,HMIC

• T_j: 175 C
• Features: Other, RF Diodes

Description: SI PIN NON HERMETIC BEAM LEAD

• T_j: -65 to 150 C
• Features: Other, RF Diodes

Description: DME, DMF, DMJ Series: Silicon Beam-Lead Schottky Mixer Diodes—Singles, Pairs and Quads Bondable and Packaged Chips

• Operating Frequency: 18,000 to 40,000 MHz
• C_T: 0.1 pF
• Features: RF Diodes
• Diode Type: Schottky Barrier Diodes

Description: This device is a Surmount™ X-Band monolithic SPDT switch designed for high power, high performance applications. This Surface Mount chipscale configuration is designed with minimal parasitics usually associated with hybrid MIC designs incorporating beam lead and/or bondable PIN

• Frequency Range: 6,000 to 14,000 MHz
• Insertion Loss: 0.65 dB
• Isolation (Port to Port): 34 dB
• Switching Speed: 0.00013 ms