-
Supplier: Newark, An Avnet Company
Description: BREAKOVER DIODE MODULE / BOX
-
Supplier: Newark, An Avnet Company
Description: BREAKOVER DIODE, 600V, RADIAL LEADED ROHS COMPLIANT: YES
-
Supplier: Littelfuse, Inc.
Description: The Breakover Gen1 series offers Breakover diodes in various voltage ranges with fast turn on behaviour, low temperature dependancy and low leakage currents.
- Features: Other, Power Diode
-
-
Supplier: Acme Chip Technology Co., Limited
Description: BREAKOVER DIODE 1400V .9A
- Features: Other, Transient Voltage Suppressor Diodes (TVS)
-
Supplier: Littelfuse, Inc.
Description: The Breakover Gen2 series offers Breakover diodes in various voltage rages with extra fast turn on behaviour, very low temperature dependancy and very low leakage currents.
- Features: Other, Power Diode
-
Supplier: ODG (Origin Data Global)
Description: BREAKOVER DIODES GEN 1-FP-CASE O
-
Supplier: VAST STOCK CO., LIMITED
Description: Sidacs Breakover Diodes
-
Supplier: Newark, An Avnet Company
Description: DIODE, TVS 15V; Clamping Voltage Vc Max:32V; Peak Pulse Current Ippm:123A; Diode Case Style:F-126; SVHC:No SVHC (20-Jun-2011); Breakover Voltage Min:17.1V; Clamping Voltage @ 8/20µs Max:32V; Package / Case:F-126; Power Rating:600W;
-
Supplier: Allied Electronics, Inc.
Description: DIAC, 32 V (Typ.) Voltage Breakover, 250 mW Power Dissipation, DO35 Package Type Glass–chip passivation These devices are triggered from a blocking–to–conduction state for either polarity of applied voltage whenever the amplitude of applied voltage exceeds the breakover voltage rating
-
Supplier: Newark, An Avnet Company
Description: SIDACTOR, 95V, DO-214AA; Clamping Voltage Vc Max:-; Diode Case Style:DO-214AA (SMB); No. of Pins:2Pins; Operating Voltage:5V; Power Dissipation Pd:-; Product Range:-; Automotive Qualification Standard:-; Breakover Voltage Max:130V RoHS Compliant: Yes
-
Supplier: Win Source Electronics
Description: Device Package: 8-SOP Mounting Type: Surface Mount HTSUS: 8541.30.0080 Capacitance: 100pF (Max) ECCN: EAR99 Current - Peak Pulse (10/1000µs): 30 A Voltage - Off State: 170V Voltage - Breakover: 60V Current - Hold (Ih): 150 mA Number of Elements: 2
- CT: 100 pF
- Features: Other, Transient Voltage Suppressor Diodes (TVS)
-
Supplier: Win Source Electronics
Description: Manufacturer: Diodes Incorporated Win Source Part Number: 1021331-TB1100L-13 Packaging: Reel - TR Mounting: SMD (SMT) Capacitance: 60pF Number of Elements: 1 Voltage - Off State: 90V Voltage - Breakover: 130V Voltage - On State: 3.5V Current - Peak Pulse (8/20μs): 150A Current - Hold
- VDRM: 90 volts
-
Supplier: Win Source Electronics
Description: Manufacturer: Diodes Incorporated Win Source Part Number: 1105526-TB1500L-13-F Packaging: Reel - TR Mounting: SMD (SMT) Capacitance: 60pF Number of Elements: 1 Voltage - Off State: 140V Voltage - Breakover: 180V Voltage - On State: 3.5V Current - Peak Pulse (8/20μs): 150A Current -
- VDRM: 140 volts
-
Supplier: Win Source Electronics
Description: Manufacturer: Diodes Incorporated Win Source Part Number: 1105517-TB0720H-13-F Packaging: Reel - TR Mounting: SMD (SMT) Capacitance: 200pF Number of Elements: 1 Voltage - Off State: 65V Voltage - Breakover: 88V Voltage - On State: 3.5V Current - Peak Pulse (8/20μs): 400A Current - Hold
- VDRM: 65 volts
Find Suppliers by Category Top
More Information Top
Indicates content that may require registration and/or purchase.
-
br21 datasheet : Datasheets for Electronic Components and Semiconductors
140 V, breakover diode .
-
Page 12. Semiconductor parts with 211 in root number
140 V, breakover diode .
-
Light-triggered thyristors with integrated protection functions
DEVICE DESIGNAND INTEGRATED PROTECTION FUNCTIONS The thyristor under investigation includes an optical gate, three further amplifjnng gates (AGs) with an integrated resistor, the main cathode area and an integrated breakover diode (BOD) located in the center of the wafer [2].
-
Progress in the development of an 8-kV light-triggered thyristor with integrated protection functions
Abstract—Light-triggered 8-kV thyristors with an integrated breakover diode were fabricated.