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Supplier: Win Source Electronics
Description: Manufacturer: AMIS Category: Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Bipolar Transistor Arrays Packaging: Bulk Part Status: Obsolete Capacitance: 0.22µF Tolerance: ±20% Voltage - Rated: 6.3V ESR (Equivalent Series Resistance): 100m
- Package Type: SOT3
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Supplier: Win Source Electronics
Description: Manufacturer: AMIS Category: Discrete Semiconductor Products>Transistors >Bipolar (BJT)>Bipolar Transistor Arrays, Pre-Biased Packaging: Bulk Part Status: Obsolete Capacitance: 0.22µF Tolerance: ±20% Voltage - Rated: 1.3VDC ESR (Equivalent
- Package Type: SOT3
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Supplier: Broadcom Inc.
Description: The HCPL-073L diode-transistor optocouplers use an insulating layer between a LED and an integrated photodetector to provide electrical insulation between input and output. Separate connections for the photodiode bias and output-transistor collector increase the speed up to a hundred
- Collector Emitter Breakdown Voltage: 5 volts
- Isolation Voltage: 3750 volts
- Mounting Option: Through Hole (Plug-in)
- Operating Temperature: 0.0 to 70 C
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Supplier: Win Source Electronics
Description: Manufacturer: AMIS Category: Isolators>Optoisolat ors>Transistor, Photovoltaic Output Optoisolators Part Status: Obsolete Capacitance: 0.22µF Tolerance: ±20% Voltage - Rated: 6.3V ESR (Equivalent Series Resistance): 100mOhm @ 100kHz Lifetime
- Operating Temperature: -40 to 85 C
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Identification, Authentifizierung and key generation Uncloneable Functions by means of Physical, overview, and scope of application
As transistors , NMOSTs of the type BS170 and PMOSTs of the type BS250 became in a used TO92-Geh€ause. .... The SRAM-PUF was constructed and analysed with as a whole 20 different transistors of same design.
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Elements of the applied electronics
MO- transistors (enhancement type selbstsperrend). .... BS250 . .... Direct current ID .
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Interface circuit using SMFE technique for an inductive kinetic generator operating as a frequency-up converter
Figure 1: Proposed electromagnetic generator (a) and its equivalent circuit model (b). . .... Rg = 5 Ω . n-MOS Transistor . .... BS250 width = 30 mm . lenght = 80 mm .
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Analysis of resonant coupled coils in the design of radio frequency transcutaneous links
]~ BS250 150pF. .... Ro may be decreased by using larger transistors but at the expense of further increases in these .... To find the effect of this self capacitance, an equivalent of the circuit to the left of…
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Voltage regulators for implants powered by coupled coils
and Re~, the 'a.c. equivalent load resistance', is half the actual load resistance RL (Fig. la). .... The phase constancy of this voltage relative to the square-wave switching the output transistors , with. .... BS250 cqpperwirewoupdon rOe~ .