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Supplier: Qorvo
Description: Qorvo's QPD2060D is a discrete 600-micron pHEMT which operates from DC to 20 GHz. The QPD2060D is designed using Qorvo's proven standard 0.25um power pHEMT production process. This process features advanced techniques to optimize microwave power and efficiency at high drain
- Package Type: Other
- Transistor Grade / Operating Range: Military
- Transistor Type: HEMT, PHEMT
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Supplier: Qorvo
Description: Qorvo's QPD2120D is a discrete 1200-micron pHEMT which operates from DC to 20 GHz. The QPD2120D is designed using Qorvo's proven standard 0.25um power pHEMT production process. This process features advanced techniques to optimize microwave power and efficiency at high drain
- Package Type: Other
- Transistor Grade / Operating Range: Military
- Transistor Type: HEMT, PHEMT
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Supplier: Qorvo
Description: Qorvo's QPD2040D is a discrete 400-micron pHEMT which operates from DC to 20 GHz. The QPD2040D is designed using Qorvo's proven standard 0.25um power pHEMT production process. This process features advanced techniques to optimize microwave power and efficiency at high drain
- Package Type: Other
- Transistor Grade / Operating Range: Military
- Transistor Type: HEMT, PHEMT
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Supplier: Qorvo
Description: Qorvo's QPD2160D is a discrete 1600-micron pHEMT which operates from DC to 20 GHz. The QPD2160D is designed using Qorvo's proven standard 0.25um power pHEMT production process. This process features advanced techniques to optimize microwave power and efficiency at high drain
- Package Type: Other
- Transistor Grade / Operating Range: Military
- Transistor Type: HEMT, PHEMT
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Supplier: Integra Technologies, Inc.
Description: ¦ GEN-2 GaN on SiC HEMT Technology ¦ POUT-PK = 1200W @ ELM Mode S / 6.4% / 50V OR 2.4ms, 6.4% DC / 50V ¦ 1.030GHz and 1.090GHz Operating Frequency ¦ Internal Impedance Pre-matched Device ¦ Depletion Mode Device ¦ Negative Gate Voltage
- Package Type: Other
- Transistor Type: Power BJT Transistors, MOSFET RF Transistors
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Supplier: Integra Technologies, Inc.
Description: ¦ GaN on SiC HEMT Technology ¦ POUT-PK = 500W @ 48 X 32uS ON, 18us OFF/ 6.4% DC / 50V ¦ 0.96-1.22GHz Instantaneous Operating Frequency Range ¦ Internal Impedance Pre-matched Device ¦ Depletion Mode Device ¦ Negative Gate Voltage and Bias
- Package Type: Other
- Transistor Type: Power BJT Transistors, MOSFET RF Transistors
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Supplier: Integra Technologies, Inc.
Description: ¦ GaN on SiC HEMT Technology ¦ POUT-PK = 120W @ 48 X 32us ON, 18us OFF/6.4% DC / 50V ¦ 1.030 and 1.090 GHz Operating Frequency ¦ Internal Impedance Pre-matched Device ¦ Depletion Mode Device ¦ Negative Gate Voltage and Bias Sequencing
- Package Type: Other
- Transistor Type: Power BJT Transistors, MOSFET RF Transistors
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Supplier: Integra Technologies, Inc.
Description: ¦ GaN on SiC HEMT Technology ¦ POUT-PK = 60W @ 48 X 32us ON, 18us OFF/6.4% DC / 50V ¦ 1.030 and 1.090 GHz Operating Frequency ¦ Internal Impedance Pre-matched Device ¦ Depletion Mode Device ¦ Negative Gate Voltage and Bias Sequencing
- Package Type: Other
- Transistor Type: Power BJT Transistors, MOSFET RF Transistors
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Supplier: Microchip Technology, Inc.
Description: MMA142AA is a self-biased (requiring only a single positive supply, using on-chip choke), gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) pseudomorphic high-electron mobility transistor (pHEMT) distributed amplifier die that operates between 1 GHz and 34
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Supplier: Broadcom Inc.
Description: Avago Technologies has combined its industry leadingE-pHEMT technology with a revolutionary chip scale package. This product is easy to use since it requires only positive DC voltages for bias and no matching coefficients are required for impedance matching to 50 O systems.
- Package Type: Other
- Transistor Grade / Operating Range: Commercial, Industrial, Military
- Transistor Type: PHEMT, Other
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Supplier: Broadcom Inc.
Description: Avago Technologies has combined its industry leadingE-pHEMT technology with a revolutionary chip scale package. This product is easy to use since it requires only positive DC voltages for bias and no matching coefficients are required for impedance matching to 50 O systems.
- Package Type: Other
- Transistor Grade / Operating Range: Commercial, Industrial, Military
- Transistor Type: PHEMT, Other
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Supplier: Broadcom Inc.
Description: Avago Technologies has combined its industry leading E-pHEMT technology with a revolutionary chip scale package. This product is easy to use since it requires only positive DC voltages for bias and no matching coefficients are required for impedance matching to 50 O systems.
- Package Type: Other
- Transistor Grade / Operating Range: Commercial, Industrial, Military
- Transistor Type: PHEMT, Other
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Supplier: Broadcom Inc.
Description: Avago Technologies has combined its industry leadingE-pHEMT technology with a revolutionary chip scale package. This product is easy to use since it requires only positive DC voltages for bias and no matching coefficients are required for impedance matching to 50 O systems.
- Package Type: Other
- Transistor Grade / Operating Range: Commercial, Industrial
- Transistor Type: PHEMT, Other
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Supplier: Microchip Technology, Inc.
Description: MMS008AA is a DC-to-8 GHz, non-reflective gallium arsenide (GaAs) pseudomorphic highelectron mobility transistor (pHEMT) single pole 4 throw (SP4T) monolithic microwave integrated circuit (MMIC) switch die. The switch delivers over 45 dB of isolation across the DC-to-8
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Supplier: Richardson RFPD
Description: The MMS008PP3 device is a DC-to-8 GHz, non-reflective gallium arsenide (GaAs) pseudomorphic high-electron-mobili ty transistor (pHEMT) single-pole 4 throw (SP4T) monolithic microwave integrated circuit (MMIC) switch in a plastic leadless 3 mm × 3 mm surface-mount package. The
- Actuator Type: SP4T, Other
- Frequency Range: 0.0 to 8000 MHz
- Insertion Loss: 1.7 dB
- Isolation (Port to Port): 43 dB
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Supplier: Richardson RFPD
Description: MMA052AA is a self-biased gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) pseudomorphic high-electron-mobili ty transistor (pHEMT) distributed amplifier in die form that operates between DC and 26 GHz. It is ideal for test instrumentation, wideband
- Amplifier Type: Power Amplifier
- Frequency Range: 0.0 to 26000 MHz
- Maximum Gain: 14.5 dB
- Maximum Operating Voltage: 10 volts
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Supplier: Richardson RFPD
Description: The ADPA9002 is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC), power amplifier that operates between dc and 10 GHz. The amplifier provides 15 dB of gain, 42 dBm of OIP3, and 31.5 dBm of
- Amplifier Type: Power Amplifier
- Frequency Range: 0.0 to 10000 MHz
- Maximum Gain: 15 dB
- Maximum Operating Voltage: 12 volts
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Supplier: Richardson RFPD
Description: The HMC7950 is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC). The HMC7950 is a wideband low noise amplifier that operates between 2 GHz and 28 GHz. The amplifier typically provides 15 dB of gain, 2.0
- Amplifier Type: Low Noise Amplifier
- Frequency Range: 2000 to 28000 MHz
- Maximum Gain: 15 dB
- Maximum Operating Voltage: 5 volts
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Supplier: Microchip Technology, Inc.
Description: MMA052AA is a self-biased gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) pseudomorphic high-electron-mobili ty transistor (pHEMT) distributed amplifier in die form that operates between DC and 26 GHz. It is ideal for test instrumentation, wideband
- Package Type: Other
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The QPD1035 is a 40W discrete GaN on SiC HEMT transistor operating from DC to 6 GHz from a 50V supply rail. The device has an input pre-match and is ideally suitable for broadband amplifier applications for pulsed and CW operation. Lead free and RoHS compliant. Gain, P3dB, and Drain Efficiency values - typical EVB performance at 5.65 GHz. (read more)
Browse Transistors Datasheets for Qorvo -
performance: 27.5-43.5GHz - Typical Linear Gain: 19.5dB - Typical Noise Figure: 2.3dB - P1dB: +11dBm - Psat: +12dBm - OIP3: >+20dBm - DC bias: Vd=3.3V@Id=61mA - 24L QFN 4x4 - MSL1 (read more)
Browse RF Amplifiers Datasheets for Richardson RFPD -
N FETs. This high-performance step-up DC/DC switching regulator controller simplifies the application design while requiring no protection diodes and no other additional external components compared to a silicon metal-oxide-semiconductor field-effect transistor (MOSFET) solution. The internal (read more)
Browse IC Switching Voltage Regulators Datasheets for DigiKey -
. Introduction A Low Dropout Regulator (LDO) is a kind of DC voltage regulator. It keeps the output voltage stable, even if the input voltage is just a little higher. This is the main difference between traditional (read more)
Browse General Purpose Diodes Datasheets for ODG (Origin Data Global)
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DC operating point shifts in active RF/microwave frequency multipliers
… diode D,, and drain-source current generator Ids), a DC gate bias (VG,), an AC input generator (with magnitude V, and resistance Rgen),an active device (such as a FET or HEMT type transistor ), a DC drain bias (Vd& and an output …
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Improved reliability of AlGaN-GaN HEMTs using an NH/sub 3/ plasma treatment prior to SiN passivation
Abstract—A passivation method has been developed which re- duces the degradation of AlGaN–GaN high electron mobility tran- sistor ( HEMT ) electrical properties caused by extended dc bias or microwave power operation.
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HEMT Transistor Noise modeling using generalized radial basis function
Abstract: In this paper, one important architecture of neural networks named a generalized radial basis function (GRBF) is applied in order to model HEMT Transistor Noise Parameters dependence on bias conditions such as dc drain-to-source voltage, dc drain-to-source …
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RF and Microwave Transistor Oscillator Design
The two HEMT devices are dc decoupled to provide independent bias control for each transistor .
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High isolation 2.4/2.6 GHz dual‐band full‐duplex patch antenna transceiver for WLAN
Find the required terminations for maximum linear output power at 2.4 GHz, using the HEMT ATF-34143 low noise pseudomorphic transistor , oper- ating 5 V dc bias , into 50 ⍀ RF source and load terminations.
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Hot-electron bolometer mixers for terahertz radiation
The HEB device was mounted into a cryogen-free cryostalt with DC bias circuitry and a low-noise cryogenic high electron mobility transistor ( HEMT ) ampli- fier together with a QCL as the LO source [24].
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Characterization of GaAs devices by a versatile pulsed I-V measurement system
Direct dependence of the pulsed I-V curves on the DC bias was found in GaAs MESFETs and HEMTs (high-electron mobility transistors ).<
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Load-Pull Techniques with Applications to Power Amplifier Design
As an example to demonstrate the capability of this setup, a GaN HEMT (gal- lium nitride high electron mobility transistor ) device was considered with a quies- cent DC bias of VGS = −2.77 V, VDS = 4.25 V and IDS = 1.7 …
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Optical control of InP-based HEMT 60GHz oscillators with sub-harmonic injection locking
Figure 1 shows an equivalent circuit for an optically controllable MMIC oscillator composed of two HEMTs; HEMT -1 is used as an active transistor with an appropriate DC Drain bias voltage for generating appropriate gain at the designed frequency range for MMW …
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A novel monolithic LNA integrating a common-source HEMT with an HBT Darlington amplifier
Feedback resistors R f , and Rfz,load resistor Rload,and dc bias resistor R,, set up the self-biasing of the HEMT transistor stage.