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Supplier: Qorvo
Description: Qorvo's QPD2060D is a discrete 600-micron pHEMT which operates from DC to 20 GHz. The QPD2060D is designed using Qorvo's proven standard 0.25um power pHEMT production process. This process features advanced techniques to optimize microwave power and efficiency at high drain bias operating
- Power Gain: 12 dB
- Operating Frequency: 0 to 20,000 MHz
- Transistor Type: HEMT, PHEMT
- Transistor Grade / Operating Range: Military
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Supplier: Qorvo
Description: Qorvo's QPD2018D is a discrete 180-micron pHEMT which operates from DC to 20 GHz. The QPD2018D is designed using Qorvo's proven standard 0.25um power pHEMT production process. This process features advanced techniques to optimize microwave power and efficiency at high drain bias operating
- Power Gain: 14 dB
- Operating Frequency: 0 to 20,000 MHz
- Transistor Type: HEMT, PHEMT
- Transistor Grade / Operating Range: Military
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Supplier: Qorvo
Description: Qorvo's QPD2025D is a discrete 250-micron pHEMT which operates from DC to 20 GHz. The QPD2025D is designed using Qorvo's proven standard 0.25um power pHEMT production process. This process features advanced techniques to optimize microwave power and efficiency at high drain bias operating
- Power Gain: 14 dB
- Operating Frequency: 0 to 20,000 MHz
- Transistor Type: HEMT, PHEMT
- Transistor Grade / Operating Range: Military
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Supplier: Qorvo
Description: Qorvo's QPD2080D is a discrete 800-micron pHEMT which operates from DC to 20 GHz. The QPD2080D is designed using Qorvo's proven standard 0.25um power pHEMT production process. This process features advanced techniques to optimize microwave power and efficiency at high drain bias operating
- Power Gain: 11.5 dB
- Operating Frequency: 0 to 20,000 MHz
- Transistor Type: HEMT, PHEMT
- Transistor Grade / Operating Range: Military
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Supplier: Integra Technologies, Inc.
Description: ■ GaN on SiC HEMT Technology ■ POUT-PK ≥ 500W @ 48 X 32uS ON, 18us OFF/ 6.4% DC / 50V ■ 0.96-1.22GHz Instantaneous Operating Frequency Range ■ Internal Impedance Pre-matched Device ■ Depletion Mode Device ■ Negative Gate Voltage and Bias Sequencing Required ■ Specified For Use Under
- Power Gain: 18 dB
- Output Power: 500 watts
- Operating Frequency: 960 to 1,220 MHz
- Transistor Type: MOSFET RF Transistors, Power BJT Transistors
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Supplier: Broadcom Inc.
Description: Avago Technologies has combined its industry leadingE-pHEMT technology with a revolutionary chip scale package. This product is easy to use since it requires only positive DC voltages for bias and no matching coefficients are required for impedance matching to 50 Ω systems.
- Transistor Grade / Operating Range: Commercial, Industrial
- Features: Other
- Transistor Type: PHEMT
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Supplier: Broadcom Inc.
Description: Avago Technologies has combined its industry leading E-pHEMT technology with a revolutionary chip scale package. This product is easy to use since it requires only positive DC voltages for bias and no matching coefficients are required for impedance matching to 50 Ω systems.
- Transistor Grade / Operating Range: Commercial, Industrial, Military
- Features: Other
- Transistor Type: PHEMT
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Supplier: Broadcom Inc.
Description: Avago Technologies has combined its industry leadingE-pHEMT technology with a revolutionary chip scale package. This product is easy to use since it requires only positive DC voltages for bias and no matching coefficients are required for impedance matching to 50 Ω systems.
- Transistor Grade / Operating Range: Commercial, Industrial, Military
- Features: Other
- Transistor Type: PHEMT
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Supplier: Broadcom Inc.
Description: Avago Technologies has combined its industry leadingE-pHEMT technology with a revolutionary chip scale package. This product is easy to use since it requires only positive DC voltages for bias and no matching coefficients are required for impedance matching to 50 Ω systems.
- Transistor Grade / Operating Range: Commercial, Industrial, Military
- Features: Other
- Transistor Type: PHEMT
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Supplier: Microchip Technology, Inc.
Description: MMA142AA is a self-biased (requiring only a single positive supply, using on-chip choke), gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) pseudomorphic high-electron mobility transistor (pHEMT) distributed amplifier die that operates between 1 GHz and 34 GHz. It is
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Supplier: Richardson RFPD
Description: MMA052AA is a self-biased gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) pseudomorphic high-electron-mobility transistor (pHEMT) distributed amplifier in die form that operates between DC and 26 GHz. It is ideal for test instrumentation, wideband military and
- Frequency Range: 0 to 26,000 MHz
- Maximum Gain: 14.5 dB
- Output Power( P1dB): 27 dBm
- Minimum Operating Voltage: 10 volts
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Supplier: Richardson RFPD
Description: The MMS008PP3 device is a DC-to-8 GHz, non-reflective gallium arsenide (GaAs) pseudomorphic high-electron-mobility transistor (pHEMT) single-pole 4 throw (SP4T) monolithic microwave integrated circuit (MMIC) switch in a plastic leadless 3 mm × 3 mm surface-mount package. The switch
- Frequency Range: 0 to 8,000 MHz
- Insertion Loss: 1.7 dB
- Isolation (Port to Port): 43 dB
- Switching Speed: 0.00001 ms
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Supplier: Microchip Technology, Inc.
Description: is a DC-to-8 GHz, non-reflective gallium arsenide (GaAs) pseudomorphic highelectron mobility transistor (pHEMT) single pole 4 throw (SP4T) monolithic microwave integrated circuit (MMIC) switch die. The switch delivers over 45 dB of isolation across the DC-to-8 GHz band while
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Supplier: Microchip Technology, Inc.
Description: MMA052AA is a self-biased gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) pseudomorphic high-electron-mobility transistor (pHEMT) distributed amplifier in die form that operates between DC and 26 GHz. It is ideal for test instrumentation, wideband military and
- Features: Other
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Supplier: Richardson RFPD
Description: The HMC8412CHIPS is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (pHEMT), low noise amplifier that operates from 0.4 GHz to 10 GHz. The HMC8412CHIPS provides ≤15 dB of typical gain, ≤19 dBm typical output power at 1
- Frequency Range: 400 to 10,000 MHz
- Maximum Gain: 15 dB
- Output Power( P1dB): 19 dBm
- Noise Figure: 1.5 dB
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The QPD1035 is a 40W discrete GaN on SiC HEMT transistor operating from DC to 6 GHz from a 50V supply rail. The device has an input pre-match and is ideally suitable for broadband amplifier applications for pulsed and CW operation. Lead free and RoHS compliant. Gain, P3dB, and Drain Efficiency values - typical EVB performance at 5.65 GHz. (read more)
Browse Transistors Datasheets for Qorvo -
applications in -2V to -10V systems. The transistor pairs are matched to offer low input bias current, fast switching speed, and almost infinite current gain in low-frequency environments. The chip is useful for precision current mirrors, sources, voltage choppers, differential amplifier input stages (read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Advanced Linear Devices, Inc. -
performance: 27.5-43.5GHz - Typical Linear Gain: 19.5dB - Typical Noise Figure: 2.3dB - P1dB: +11dBm - Psat: +12dBm - OIP3: >+20dBm - DC bias: Vd=3.3V@Id=61mA - 24L QFN 4x4 - MSL1 (read more)
Browse RF Amplifiers Datasheets for Richardson RFPD -
N FETs. This high-performance step-up DC/DC switching regulator controller simplifies the application design while requiring no protection diodes and no other additional external components compared to a silicon metal-oxide-semiconductor field-effect transistor (MOSFET) solution. The internal (read more)
Browse IC Switching Voltage Regulators Datasheets for DigiKey -
ideal for precision signal switching and amplifying in +2V to +10V systems, delivering low input bias current, low input capacitance, and fast switching speed. The MOSFET features a matched transistor pair, ensuring minimal offset voltage and consistent thermal responses. With a low threshold (read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Advanced Linear Devices, Inc. -
gain (beta), such as current mirrors and current sources. The high input impedance and the high DC current gain of the Field-Effect Transistors result in extremely low current loss through the control gate. The DC current gain is limited by the gate input leakage current, which is specified at 100p (read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Advanced Linear Devices, Inc. -
The ALD1115 MOSFET by Advanced Linear Devices is a monolithic complementary N-channel and P-channel transistor pair that is designed for a broad range of analog applications. It contains an N-channel and a P-channel MOSFET in one package. These chips are (read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Advanced Linear Devices, Inc.
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DC operating point shifts in active RF/microwave frequency multipliers
… diode D,, and drain-source current generator Ids), a DC gate bias (VG,), an AC input generator (with magnitude V, and resistance Rgen),an active device (such as a FET or HEMT type transistor ), a DC drain bias (Vd& and an output …
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Improved reliability of AlGaN-GaN HEMTs using an NH/sub 3/ plasma treatment prior to SiN passivation
Abstract—A passivation method has been developed which re- duces the degradation of AlGaN–GaN high electron mobility tran- sistor ( HEMT ) electrical properties caused by extended dc bias or microwave power operation.
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HEMT Transistor Noise modeling using generalized radial basis function
Abstract: In this paper, one important architecture of neural networks named a generalized radial basis function (GRBF) is applied in order to model HEMT Transistor Noise Parameters dependence on bias conditions such as dc drain-to-source voltage, dc drain-to-source …
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RF and Microwave Transistor Oscillator Design
The two HEMT devices are dc decoupled to provide independent bias control for each transistor .
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High isolation 2.4/2.6 GHz dual‐band full‐duplex patch antenna transceiver for WLAN
Find the required terminations for maximum linear output power at 2.4 GHz, using the HEMT ATF-34143 low noise pseudomorphic transistor , oper- ating 5 V dc bias , into 50 ⍀ RF source and load terminations.
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Hot-electron bolometer mixers for terahertz radiation
The HEB device was mounted into a cryogen-free cryostalt with DC bias circuitry and a low-noise cryogenic high electron mobility transistor ( HEMT ) ampli- fier together with a QCL as the LO source [24].
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Characterization of GaAs devices by a versatile pulsed I-V measurement system
Direct dependence of the pulsed I-V curves on the DC bias was found in GaAs MESFETs and HEMTs (high-electron mobility transistors ).<
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Load-Pull Techniques with Applications to Power Amplifier Design
As an example to demonstrate the capability of this setup, a GaN HEMT (gal- lium nitride high electron mobility transistor ) device was considered with a quies- cent DC bias of VGS = −2.77 V, VDS = 4.25 V and IDS = 1.7 …
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Optical control of InP-based HEMT 60GHz oscillators with sub-harmonic injection locking
Figure 1 shows an equivalent circuit for an optically controllable MMIC oscillator composed of two HEMTs; HEMT -1 is used as an active transistor with an appropriate DC Drain bias voltage for generating appropriate gain at the designed frequency range for MMW …
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A novel monolithic LNA integrating a common-source HEMT with an HBT Darlington amplifier
Feedback resistors R f , and Rfz,load resistor Rload,and dc bias resistor R,, set up the self-biasing of the HEMT transistor stage.