-
Supplier: Win Source Electronics
Description: Manufacturer: Renesas Electronics America Win Source Part Number: 183114-RJK1028DNS-00#J5 Category: Discrete Semiconductor Products Family: FETs - Single Popularity: Low Fake Threat In the Open Market: 44 pct. Supply and Demand Status: Balance
-
Description: MOSFET N-CH 16V 3.8A 2HWSON
- V(BR)DSS: 16 volts
- IDSS: 3,799.9999999999995 milliamps
- Features: MOSFET, Other
- Packing Method: Tape Reel
-
Supplier: Win Source Electronics
Description: Win Source Part Number: 1011791-RJK03M6DNS-WS#J5 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: * Package: Bulk Standard Package: 1 ECCN: EAR99 Fake Threat In the Open Market: 69 pct. MSL Level: 1 (Unlimited) REACH Status: Vendor Undefined HTSUS:
- Features: MOSFET, Power MOSFET
- Package Type: SOT3
-
-
Supplier: Win Source Electronics
Description: Manufacturer: Renesas Electronics America Win Source Part Number: 1243058-RJK03E1DNS Manufacturer Homepage: www.renesas.com Popularity: Medium Fake Threat In the Open Market: 32 pct. Supply and Demand Status: Balance
- Features: Power MOSFET
- Package Type: SOT3
-
Supplier: Acme Chip Technology Co., Limited
Description: POWER FIELD-EFFECT TRANSISTOR
- Packing Method: Bulk Pack
- Features: General Purpose BJT, Other
-
Supplier: Acme Chip Technology Co., Limited
Description: N CHANNEL POWER MOS FET
- Packing Method: Bulk Pack
- Features: MOSFET, Other
-
Supplier: Rochester Electronics
Description: N Channel MOSFET
- Features: MOSFET, Other
- Packing Method: Tape Reel
-
Supplier: Win Source Electronics
Description: Manufacturer: Renesas Electronics America Win Source Part Number: 891763-RJK03J9DNS-00#J5 Series: * Features: Mosfet Array Package: Bulk Categories: Discrete Semiconductor Products Popularity: High Fake Threat In the Open Market: 95 pct. Supply and Demand Status: Limited Quantity per package:
- Features: MOSFET
- Package Type: SOT3
-
Supplier: ERSAELECTRONICS PTE. LTD.
Description: Product overview: RJK03B9DNS-00 from Renesas Electronics Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines,
- Features: MOSFET
-
Supplier: ERSAELECTRONICS PTE. LTD.
Description: Silicon N Channel Power MOS FET Power Switching Product overview: RJK03E1DNS from Renesas Electronics Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing
- Features: MOSFET
-
Supplier: ERSAELECTRONICS PTE. LTD.
Description: RJK0225 - P Channel Power MOSFET Product overview: RJK0225DNS-00#J5 from Renesas Electronics Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing
- PD: 30,000 milliwatts
- TJ: 150 C
- Features: MOSFET, Other
-
Supplier: ODG (Origin Data Global)
Description: MOSFET N-CH 16V 3.8A 2HWSON
- V(BR)DSS: 16 volts
- IDSS: 3,799.9999999999995 milliamps
- PD: 15,000 milliwatts
- TJ: 150 C
-
Supplier: VAST STOCK CO., LIMITED
Description: MOSFET BEAM2 Series FET, 30V, HWSON3030-8
- Features: MOSFET
-
Supplier: ERSAELECTRONICS PTE. LTD.
Description: MOSFET N-CH 30V 25A 8HWSON Product overview: RJK03M5DNS-00#J5 from Renesas Electronics Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets,
- PD: 15 milliwatts
- TJ: 150 C
- MOSFET Operating Mode: Enhancement
- Features: MOSFET, Other
-
Supplier: DigiKey
Description: N-Channel 100V 4A (Ta) 10W (Ta) Surface Mount 8-HWSON (3.3x3.3)
- Polarity: N-Channel
- Features: Other
Find Suppliers by Category Top
More Information Top
Indicates content that may require registration and/or purchase.
-
Over the connections of sulfur antimony with antimony oxide
- By langsanier Abktihliing is indeed the compound of Scbwefelantimon with oxide a conductor and krystallinisch by ones @kern contents of oxide also becomes it by a semiconductor is it occurring Rothspiesglauzerz how the DNA very indeed krystallinisch to langsainen Abkiihlen in …
-
Direct-current-conductivity measurements on to Film-the deoxyribonucleic-acid
Because of the Temperagurabhiingigkeit of the Leitf / ~ higkeit, the DNA was taken up 2,4 eVs gez ~ hlt and a forbidden zone yon so far to the organisehen semiconductors .
-
Thermal Modeling of Multi-Fin Field Effect Transistor Structure Using Proper Orthogonal Decomposition
The DNS is, however, prohibitive for simulation of semiconductor ICs due to its high-computational cost.
-
A collision model of charge exchange between metal and polymer spheres
… Dns/e where V(x)is the potential at any distance x, N d is the concentration of impurity in the carriers, K is the dielectric constant of the semiconductor , XO is the charge penetration depth and ( Dns is the barrier height.
-
Pull at the life thread: experiments with individual DNS‐Molekülen
The electronic structure of the DNA allows it in the principle to use the molecular strand as electrical conductors or even as " semiconductor structure element".
-
Science Topically
… itself different localization degree not only the charge separation in MEH-PPV erklart, but dai3 cs a very general principle that fur is the description of polymeric semiconductors of grundsatzlicher meaning and … … of damage in the DNA and Ausheilung of which …
-
Characterization of InGaAs/AlGaAs pseudomorphic modulation-doped field-effect transistors
M I. INTRODUCTION ODULATION-DOPED heterojunction semicon- ductor -structures have been shown to be excel.ent candidates for field-effecttransistors (MODFET’s) dns to their superior electron transport properties parallel to the heterointerface.
-
http://dspace.mit.edu/bitstream/handle/1721.1/46669/428091372-MIT.pdf?sequence=2
Furthermore, in order for ionic amorphous oxide semiconductors to have large electron mobilities comparable to those of the corresponding crystals, the constituing metal cations should have an electronic configuration (n-1) dns (n>5), i.e. heavy post transition metal cations.
-
Piezoresistance of n‐Silizium in dependence of the electric field strength
The physical cause consists in the genugender field star germ much valley semiconductor fails by a detailed balance of the Taler daB i.e. of daBfur … … of the same energy the valley verlaBt, that are scattered the valley in DNA .
-
Lectures
… trace structure and strahlungsbedingten biological effects zusammenhängen� result: a Mikrokalorimeter was developed that became rules energy and experiments different through comparison with tissue equivalents proportionality counters and semiconductor -Mikrodosimetern the provision of … … beam interaction on the DNA and installed in a …