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Supplier: Hamamatsu Photonics
Description: Low PDL (Polarization Dependence Loss) InGaAs PIN photodiode G8370-83 has low PDL (Polarization Dependence Loss) at 1.55 µm, large shunt resistance and very low noise.
- Active Area Diameter or Length: 3 mm
- Active Area Height: 3 mm
- Dark Current: 75 nA
- PN, PIN, or Avalanche: PIN Photodiode
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Supplier: Hamamatsu Photonics
Description: Low PDL (Polarization Dependence Loss) InGaAs PIN photodiode G8370-85 has low PDL (Polarization Dependence Loss) at 1.55 µm, large shunt resistance and very low noise.
- Active Area Diameter or Length: 5 mm
- Active Area Height: 5 mm
- Dark Current: 125 nA
- PN, PIN, or Avalanche: PIN Photodiode
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Supplier: Hamamatsu Photonics
Description: Low PDL (Polarization Dependence Loss) InGaAs PIN photodiode G8370-81 has low PDL (Polarization Dependence Loss) at 1.55 µm, large shunt resistance and very low noise.
- Active Area Diameter or Length: 1 mm
- Active Area Height: 1 mm
- Dark Current: 5 nA
- PN, PIN, or Avalanche: PIN Photodiode
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Supplier: Hamamatsu Photonics
Description: Low PDL (Polarization Dependence Loss) InGaAs PIN photodiode G8370-82 has low PDL (Polarization Dependence Loss) at 1.55 µm, large shunt resistance and very low noise.
- Active Area Diameter or Length: 2 mm
- Active Area Height: 2 mm
- Dark Current: 25 nA
- PN, PIN, or Avalanche: PIN Photodiode
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Supplier: ODG (Origin Data Global)
Description: 1.5 MM DIAMETER INGAAS PHOTODIOD
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Supplier: DigiKey
Description: SENSOR PHOTODIODE TO8 12 LEADS
- Active Area Diameter or Length: 3 mm
- Dark Current: 2 nA
- Operating Temperature: -40 to 75 C
- Photodiode Package / Mounting: Through Hole Technology (THT)
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Supplier: DigiKey
Description: SENSOR PHOTODIODE TO5-8 MET CAN
- Active Area Diameter or Length: 3 mm
- Dark Current: 500000 nA
- Operating Temperature: -40 to 75 C
- Photodiode Package / Mounting: Through Hole Technology (THT)
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Supplier: DigiKey
Description: Photodiode TO-46-3 Lens Top Metal Can
- Operating Temperature: -40 to 75 C
- Photodiode Package / Mounting: Through Hole Technology (THT), Other
- Sensitivity: 0.9000 A/W
- Spectral Response: IR
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Supplier: DigiKey
Description: Photodiode TO-5 Variant, 3 Leads, Lens Top Metal Can
- Operating Temperature: -40 to 75 C
- Photodiode Package / Mounting: Through Hole Technology (THT)
- Sensitivity: 0.9000 A/W
- Spectral Response: IR
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Supplier: First Sensor AG
Description: First Sensor offers large-area InGaAs PIN photodiodes with active sensor surfaces up to 3 mm in diameter. The diodes feature low dark currents and high sensitivity up to 1700 nm wavelength. A model enhanced for the visible wavelength range is also available. Housing options include
- Active Area Diameter or Length: 1 mm
- Dark Current: 1 to 10 nA
- PN, PIN, or Avalanche: PIN Photodiode
- Photodiode Material: Indium Gallium Arsenide
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Supplier: ODG (Origin Data Global)
Description: 3.0 MM DIAMETER INGAAS PHOTODIOD
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Supplier: OSI Optoelectronics
Description: ). The detector module offers high reliability satisfying TELCORDIA GR-468-CORE. The LPD 3080 coaxial devices are available with either a 245 um or 900 um jacketed fiber and are available at two back reflection levels. Product Features InGaAs PIN Photodiode Low Dark
- Active Area Diameter or Length: 0.0750 mm
- Dark Current: 0.0500 nA
- Operating Temperature: -40 to 85 C
- PN, PIN, or Avalanche: PIN Photodiode
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Supplier: OSI Optoelectronics
Description: FCI-InGaAs-300B1XX series are multifunctional backside illuminated photodiode/arrays. They come standard in a single element diode or 4 - or 8- elements array with active area of 300µm. These back illuminated InGaAs photodiode/arrays are designed to be flip chip mounted (active
- Active Area Diameter or Length: 0.3000 mm
- Dark Current: 0.0500 nA
- Operating Temperature: 0.0 to 70 C
- PN, PIN, or Avalanche: PIN Photodiode
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Supplier: OSI Optoelectronics
Description: in infrared instrumentation and monitoring applications. The photodiode chip are isolated in TO-46 or TO-5 packages with a broadband double sided AR coated flat window. FCI-InGaAs-1500-X and FCI-InGaAs-3000-X come with different shunt resistance values of 5, 10, 20, 30 and 40 MO.
- Active Area Diameter or Length: 1 mm
- Noise Equivalent Power (NEP): 2.45E-14 W/Hz½
- Operating Temperature: -40 to 75 C
- PN, PIN, or Avalanche: PIN Photodiode
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Supplier: OSI Optoelectronics
Description: in infrared instrumentation and monitoring applications. The photodiode chip are isolated in TO-46 or TO-5 packages with a broadband double sided AR coated flat window. FCI-InGaAs-1500-X and FCI-InGaAs-3000-X come with different shunt resistance values of 5, 10, 20, 30 and 40 MO.
- Active Area Diameter or Length: 3 mm
- Noise Equivalent Power (NEP): 4.25E-14 W/Hz½
- Operating Temperature: -40 to 75 C
- PN, PIN, or Avalanche: PIN Photodiode
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Supplier: VAST STOCK CO., LIMITED
Description: Photodiodes InGaAs APD COAXIAL PACKAGE
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Supplier: Marktech Optoelectronics
Description: Transistors; Avalanche Photodiodes to InP and InGaAs Pin Photodiodes. Our silicon detectors have a spectral sensitivity range in the 400nm to 1100nm for applications such as optical switching and sensing requiring high speed, consistency and high reliability. Marktech
- Active Area Diameter or Length: 0.1000 mm
- PN, PIN, or Avalanche: PIN Photodiode
- Photodiode Material: Indium Gallium Arsenide
- Photodiode Package / Mounting: Other
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Supplier: Acme Chip Technology Co., Limited
Description: SENSOR PHOTODIODE 1550NM TO46-3
- VR: 2 volts
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Photosensor Modules - InGaAs Photoreceiver, Femtowatt, 800-1700 nm, 1 mm Diameter, 8-32 / M4 -- 2153Supplier: Newport MKS
Description: The 2153 Femtowatt InGaAs Photoreceiver is ideal when you need the ultimate in low-light-level detection in the 800 to 1700 nm range. When used with a chopper and a lock-in amplifier, these receivers can easily achieve sensitivity levels in the femtowatt range. These receivers provide amazing
- Photosensor Type: PIN Photodiode
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Supplier: California Eastern Laboratories - CEL
Description: InGaAs APD In Coaxial Package For Fiber Optic Communication And OTDR Applications
- Active Area Diameter or Length: 0.0800 mm
- Dark Current: 7 nA
- Operating Temperature: -40 to 85 C
- PN, PIN, or Avalanche: Avalanche Photodiode
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Supplier: Newport MKS
Description: The 818-IG/DB InGaAs Photodetector is supplied with a NIST traced calibration report that details individual detector responsivity measured with and without attenuator. Exclusive OD3 attenuator technology extends the calibrated optical dynamic range of our photodiode sensor heads by
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Supplier: Newport MKS
Description: The Model 1014, 45 GHz InGaAs Fiber-Optic Biased Photodetector makes ultra high-speed measurements over 500-1630 nm easy. The self-contained module connects directly to test instruments like digital oscilloscopes, spectrum analyzers, and network analyzers for lightwave time- and frequency
- Bandwidth: 0.0 to 45000 MHz
- Connector Type: Other
- Receiver Rise Time: 0.0090 ns
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Supplier: RS Components, Ltd.
Description: The FCI-InGaAs-xxx series, from OSI Optoelectronics, are high speed InGaAs photodiodes. They are ideal for Datacom and Telecom applications. These high speed photodiodes offer low capacitance, low dark current and high responsivity, making them suitable for high bit rate
- Photodiode Material: Indium Gallium Arsenide
- Photodiode Package / Mounting: Leaded, Other
- Sensitivity: 0.9500 A/W
- Spectral Response Range: 900 to 1700 nm
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Supplier: Newport MKS
Description: The 819-IG-1.5-800PS multifunctional integrating sphere provides multiple measurement capabilities in a single integrating sphere device: a) a precision InGaAs photodiode for calibrated 940-1640 nm average power measurement, b) a fast photodiode for pulse shape characterization
- Spectral Response Range: 940 to 1640 nm
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Supplier: Electro Optical Components, Inc.
Description: Si and InGaAs Photodiodes Wavelength Range from 320 to 1700 nm Bandwidth from 10 kHz up to 2 GHz Max. Conversion Gain 4.8 x 103 V/W Min. NEP approx. 14 pW/vHz Applications: Spectroscopy Fast Pulse and Transient Measurements Optical Triggering Optical Front-End for Oscilloscopes and A/D
- Photosensor Type: PIN Photodiode
- Spectral Response: 320 to 1700 nm
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Supplier: MACOM
Description: -sensitivity highly-reliable PIN photodiodes and high performance low power consumption MACOM quad Trans-Impedance Amplifier (TIA). The ROSA is assembled in a hermetic-sealed package with an LC receptacle for optical input and two flex circuits for DC/RF electrical connections. The ROSA is
- Amplifier Type: Transimpedance
- Connector Type: LC
- Data Rate: 28000 Mbps
- Photodiode Semiconductor: InGaAs (900nm to 1700nm)
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Supplier: Broadcom Inc.
Description: The AFBR-2310Z is a compact, high performance, cost effective receiver for multi GHz analog communication over single mode optical fiber. The receiver incorporates a wide bandwidth, low dark current InGaAs/InP PIN photodiode packaged inside a TO-header, together with a high performance E
- Cable Type: Single Mode
- Connector Type: FC
- Operating Temperature: -40 to 185 F
- Photodiode Semiconductor: InGaAs (900nm to 1700nm)
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Supplier: Richardson RFPD
Description: The NR8360JP-BC is an InGaAs avalanche photodiode module withsingle mode fiber. A thermoelectric cooler is integrated enabling thetemperature control of the APD chip. It is designed for long-reach optical communicationsand optical test instruments, especially OTDR.
- Laser Type: Laser Diodes
- Wavelength Range: 1550 nm
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Supplier: Xenics nv
Description: The high resolution Xlin-1.7-3000 InGaAs detector is specifically designed for earth observation. The detector is based on mechanical butting of three InGaAs photodiode arrays with each 1024 pixels on a 25 µm pixel pitch, forming a nearly continuous line of 2900 pixels. The
- Horizontal Resolution: 3 lines
- Imaging Technology / Camera Type: Other
- Operating Temperature: -40 to 185 F
- Performance Features: Line Scan
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Supplier: ValueTronics International, Inc.
Description: Ideal for high-speed digitizing oscilloscopes The Agilent 83440C DC-20 GHz Lightwave Converter features hermetically sealed, unamplified InGaAs photodiodes. Input ports have universal optical interfaces that are compatible with most optical connectors (9/125 µm fiber). Output ports
- Form Factor: Hand Held
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Supplier: ProPhotonix, Ltd.
Description: communications. They are multi-quantum-well structure (MQW), have a built-in InGaAs monitor photodiode and a hermetically sealed active component. The pigtailed laser packages are typically supplied with a 1 meter 9/125µm fibre. Coupling to singlemode 4/125µm fibre is available on
- Features: Fiber Pigtailed
- Laser Output: Continuous Wave
- Laser Type: Laser Diodes
- Laser Wavelength: Red
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Supplier: ProPhotonix, Ltd.
Description: communications. The universal adaptors are fitted with a split sleeve alignment mechanism, which gives better than 1dB repeatability on coupling. The packaged laser diodes are multi-quantum-well structure (MQW), have a built-in InGaAs monitor photodiode and a hermetically sealed active
- Laser Wavelength: Red
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Supplier: RS Components, Ltd.
Description: Technologies transceiver works on a 1300nm wavelength. The transmitter part uses a 1300 nm InGaAsP LED and the receiver has InGaAs PIN photodiode together with a silicon trans impedance preamplifier IC. . RoHS Compliant. Manufactured in an ISO 9001 certified facility. Temperature
- Connector Type: LC
- Data Rate: 1.25 Gbps
- Receiver Rise Time: 0.2600 ns
- Transmitter Rise Time: 0.2600 ns
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Hamamatsu Photonics introduces its G1719X series of InGaAs PIN Photodiodes for long wavelengths. These compact, surface-mounted NIR sensors with low dark current are designed for infrared applications, including gas sensing, laser applied measurements, and remote temperature sensing (read more)
Browse Photodiodes Datasheets for Hamamatsu Photonics -
Hamamatsu Photonics is pleased to introduce the G15978-0020P, an exciting new InGaAs photodiode that redefines the possibilities in compact sensor technology. Designed specifically for researchers, engineers, and industrial applications, this new photodiode is ideally suited for accurate (read more)
Browse Photodiodes Datasheets for Hamamatsu Photonics -
Hamamatsu Photonics is pleased to introduce the G15978-0020P, an exciting new InGaAs Avalanche Photodiode that redefines the possibilities in compact sensor technology. Designed specifically for researchers, engineers, and industrial applications, this new photodiode is ideally suited for (read more)
Browse Avalanche Diodes Datasheets for Hamamatsu Photonics -
spectrophotometry. This new range of sensors offers numerous advantages. One of its hallmark features is high sensitivity across the near-infrared range of 0.9 to 2.1 µm, made possible by the combination of an InGaAs photodiode array and a CMOS chip. The (read more)
Browse Uncategorized Products Datasheets for Hamamatsu Photonics -
. Their hybrid CMOS readout circuit, paired with back-illuminated InGaAs photodiodes, ensures exceptional image quality and operational stability. A standout feature is the integrated 3-stage thermoelectric cooling system, which dramatically reduces thermal noise, enabling accurate detection (read more)
Browse Uncategorized Products Datasheets for Hamamatsu Photonics
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Indicates content that may require registration and/or purchase.
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Radiation hardness studies of InGaAs and Si photodiodes at 30, 52, & 98
MeV and fluences to 5x10^11 protons/cm^2
damage to their responsivity with increasing fluence; the InGaAs photodiodes showed significantly increased dark current as the fluence increased.
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Electron Irradiation of InGaAsP LEDs and InGaAs Photodetectors
The effect of 30 MeV electron irradiT i.on op InGaAn LEDs and InGaAs photodiodes was studied.
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InGaAs pin Photodiodes and JFETs on InP:Fe Substrates for Optoelectronic IC's
A monolithic integrated optoelectronic device consisting of photodiode and field- effect transistor (FET) in In053Ga0 47As /InP may in future replace the hybrid version of an InGaAs photodiode and a GaAs FET in the front end of optical receivers for wavelengths in …
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Metamorphic graded bandgap InGaAs-InGaAlAs-InAlAs double heterojunction p-i-I-n photodiodes
HIGH-speed InGaAs photodiodes are essential compo- nents in wide bandwidth long-haul optical fiber com- munication systems.
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Monolithically Integrated Photodiode And Preamplifier For Wide-Band Fiber Optic Links
Spectrum analyser displays of the InGaAs photodiode output against frequency .
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http://eprints.hud.ac.uk/8766/1/Fghosnafinalthesis.pdf
A comparison of typical dark currents for Si, Ge, GaAs, and InGaAs photodiodes as a function of normalized bias voltage .
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Comparison on IV characteristics analysis between Silicon and InGaAs PIN photodiode
[4] Chii-Wen Chen, Wen-Chin Lee, Meng-Chyi Wu, Chong-Long Ho,Chia-Hao Chuang,Dong-Ying Hsieh, “A Novel InGaAs Photodiode Fabrication and Its Application, ”IEEE 5th International .
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High-speed photodiodes for microwave and millimeter-wave systems
rent InP- InGaAs photodiode with .
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Subject Index
InGaAs photodiode , wet-etched microlens opt. coupling tolerance.
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Photodetectors For Long Wavelength Optical Fiber Communication Systems
We have tried a numerical calculation for an InP / InGaAs photodiode .27 .