InGaAs Photodiode

Description: TO-46 package, 1.3/1.55 μm, 2.5 Gbps G9820 is a family of high-speed receivers specifically developed for 1.3/1.55 μm band optical fiber communications. This device incorporates a high-speed, high-sensitivity InGaAs PIN photodiode integrated with a high-speed preamp, allowing easy

• Photodiode Material: Indium Gallium Arsenide
• Photodiode Type: PIN Photodiode

Description: infrared instrumentation and monitoring applications. The photodiode chip are isolated in TO-46 or TO-5 packages with a broadband double sided AR coated flat window. FCI-InGaAs-1500-X and FCI-InGaAs-3000-X come with different shunt resistance values of 5, 10, 20, 30 and 40 MO.

• Sensitivity: 0.95 A/W
• Spectral Response Range: 900 to 1,700 nm
• Active Area Diameter or Length: 1 mm
• Operating Temperature: -40 to 75 C

Description: FCI-InGaAs-300B1XX series are multifunctional backside illuminated photodiode/arrays. They come standard in a single element diode or 4 - or 8- elements array with active area of 300µm. These back illuminated InGaAs photodiode/arrays are designed to be flip chip mounted

• Sensitivity: 0.85 A/W
• Spectral Response Range: 900 to 1,700 nm
• Active Area Diameter or Length: 0.30000000000000004 mm
• Rise Time: 3.5 ns

Description: Quadrant type

• Sensitivity: 0.95 A/W
• Spectral Response Range: 900 to 1,700 nm
• Active Area Diameter or Length: 2 mm
• Active Area Height: 2 mm

Description: I 2 C-compatible InGaAs photodiodes

• Spectral Response Range: 900 to 1,700 nm
• Active Area Diameter or Length: 0.30000000000000004 mm
• Active Area Height: 0.30000000000000004 mm
• Photodiode Material: Indium Gallium Arsenide

Description: FCI-InGaAs-XXM series with 4, 8, 12 and 16 channels are parts of OSI Optoelectronics' high speed IR sensitive photodetector arrays. Each AR coated element is capable of 2.5Gbps data rates exhibiting high responsivity from 1100nm to 1620nm. FCI-InGaAs-XXM, which comes standard on a

• Sensitivity: 0.5 A/W
• Spectral Response Range: 400 to 1,000 nm
• Operating Temperature: -20 to 70 C
• Photodiode Spectral Response: IR

Description: FCI-H155/622M-InGaAs-70 series are high-speed 70µm InGaAs photodetector integrated with wide dynamic range transimpedance amplifier. Combining the detector with the TIA in a hermetically sealed 4 pin TO-46 package provides ideal conditions for high-speed signal detection and

• Sensitivity: 0.95 A/W
• Spectral Response Range: 900 to 1,700 nm
• Active Area Diameter or Length: 0.05500000000000001 mm
• Rise Time: 3 ns

Description: First Sensor offers large-area InGaAs PIN photodiodes with active sensor surfaces up to 3 mm in diameter. The diodes feature low dark currents and high sensitivity up to 1700 nm wavelength. A model enhanced for the visible wavelength range is also available. Housing options include

• Spectral Response Range: 600 to 1,700 nm
• Active Area Diameter or Length: 1 mm
• Rise Time: 15 ns
• Dark Current: 1 to 10 nA

Description: Avalanche Photodiodes to InP and InGaAs Pin Photodiodes. Our silicon detectors have a spectral sensitivity range in the 400nm to 1100nm for applications such as optical switching and sensing requiring high speed, consistency and high reliability. Marktech manufactured InP Pin

• Active Area Diameter or Length: 0.30000000000000004 mm
• Photodiode Material: Indium Gallium Arsenide
• Features: Other
• Photodiode Type: PIN Photodiode

Description: Infrared InGaAs PIN Photodiode

• Photodiode Spectral Response: IR
• Features: Other
• Photodiode Type: PIN Photodiode

Description: PIN Photodiode with integrated Temperature Sensor

• Spectral Response Range: 740 to 1,100 nm
• Active Area Diameter or Length: 0.56 mm
• Active Area Height: 0.56 mm
• Photodiode Spectral Response: IR

Description: Image sensor with 192 × 96 pixels developed for two-dimensional infrared imaging The G13441-01 has a hybrid structure consisting of a CMOS readout circuit (ROIC: readout integrated circuit) and back-illumi-nated InGaAs photodiodes. Each pixel is made up of an InGaAs

• Horizontal Pixels: 192
• Pixel Size: 50 µm
• Maximum Frame Rate: 867 fps

Description: Photodiode 940nm 6µs 1206 (3216 Metric)

• Spectral Response Range: 700 to 1,100 nm
• Rise Time: 6,000 ns
• Operating Temperature: -40 to 85 C
• Dark Current: 1 nA

Description: damaging photodiodes during soldering and cleaning, consider using sockets. SiC photodiodes features & types High responsivity – 0.13 A/W peak UV radiation hardness Cost effective standard sizes Low temperature coefficient Built in Preamplifiers optional UV A, B, C, BC & BC2 filters

• Sensitivity: 0.13 A/W
• Spectral Response Range: 230 to 530 nm
• Active Area Diameter or Length: 1.1 to 3.6 mm
• Active Area Height: 1.1 to 3.6 mm

Description: range over several orders of magnitude, from 10 picowatt/cm2 to several hundred MW/cm2. Our knowledgeable and friendly staff are available to support the design of photodiodes from concept through final application of the product in manufacturing. Design flexibility has made

• Photodiode Type: PN Photodiode
• Photodiode Material: Silicon

Description: Photodiodes InGaAs APD COAXIAL PACKAGE

Description: Single Photodiode with identical Outer Dimensions PR5040 is a single silicon photodiode with rectangular shape having the same outer dimensions as the segmented types PR5001-PR5030. The photodiode has a low dark current combined with a high sensitivity. The dies are moulded into

• Photodiode Spectral Response: IR, Visible
• Photodiode Type: PN Photodiode
• Photodiode Material: Silicon
• Photodiode Package: Surface Mount Technology (SMT)

Description: Opto Diode offers high quality standard and custom photodiodes. We have a large variety of standard devices featuring low dark current and low capacitance. For responsivity between 400 -1100 nm, Opto Diode has the perfect photodiode for your application. For more information about

• Sensitivity: 0.36 to 0.4 A/W
• Active Area Diameter or Length: 1.35 to 0.76 mm
• Rise Time: 8 to 15 ns
• Operating Temperature: -55 to 100 C

Description: Quadrant photodiodes are used for a variety of alignment applications including laser beams and position sensing. They are available in 2.5, 5.0 and 7.9 mm diameter active areas. Quadrant Photodetector Features Si-PIN photodiode Spectral range 400 – 1100 nm Hermetic sealed in TO-8

• Spectral Response Range: 400 to 1,100 nm
• Active Area Diameter or Length: 2.5000000000000004 to 7.900000000000001 mm
• Photodiode Spectral Response: IR, Visible
• Photodiode Package: Leaded, Through Hole Technology (THT)

Description: TOP VIEW / 3527 / 3.2X2.7X1.1

• Sensor Technology: Optical Linear Encoder

Description: Opto Diode offers high quality standard and custom photodiodes. We have a large variety of standard devices featuring low dark current and low capacitance. For responsivity between 400 -1100 nm, Opto Diode has the perfect photodiode for your application. For more information about

• Sensitivity: 0.2 to 0.28 A/W
• Active Area Diameter or Length: 2.52 mm
• Rise Time: 10 ns
• Operating Temperature: -55 to 100 C

Description: Opto Diode offers high quality standard and custom photodiodes. We have a large variety of standard devices featuring low dark current and low capacitance. For responsivity between 400 -1100 nm, Opto Diode has the perfect photodiode for your application. For more information about

• Sensitivity: 0.2 to 0.28 A/W
• Active Area Diameter or Length: 4 mm
• Rise Time: 15 ns
• Operating Temperature: -55 to 100 C

Description: SENSOR PHOTODIODE 940NM 1206

• VR: 32 volts

Description: SMT PIN Photodiode in SMR Package, Radiant Sensitive Area 1 x 1 mm²

• Spectral Response Range: 750 to 1,100 nm
• Active Area Diameter or Length: 1 mm
• Active Area Height: 1 mm
• Photodiode Spectral Response: IR

Description: Two differential pairs of photodiodes with amplifiers The optical sensor IC PR5401 consists of two pairs of photodiodes placed in opposite quadrants with differential amplifiers. If illuminated uniformly, the output is Vcc/2, but depends on the balance of illumination on each pair.

• Spectral Response Range: 950 nm
• Operating Temperature: -40 to 85 C
• Array: Array
• Photodiode Spectral Response: IR, Visible

Description: LED Microsensor NT LLC is focused on developing and manufacturing optoelectronic devices for the mid-infrared spectral range. The company offers a wide range of Light Emitting Diodes (LEDs), LED arrays and spectral matched Photodiodes (PD) that cover the spectral range from 1600 to 5000 nm,

• Sensitivity: 0.7 to 1.6 A/W
• Active Area Diameter or Length: 0.30000000000000004 to 1 mm
• Dark Current: 10,000 to 25,000,000 nA
• Noise Equivalent Power (NEP): 0.0000000000009 to 0.00000000006 W/Hz^½

Description: Amplifier AMT-07M converts the output current of a signal source (such as Mid-Infrared photodiode) into a voltage with amplification for subsequent use with various electronic systems, such as lock-in amplifiers, oscilloscopes or A/D converters. Synchronous detector is built in the same

• Maximum Output: 4 volts
• Output Impedance: 50 ohms
• Operating Temperature: 5 to 59 F
• User Interface: Front Panel and Display

Description: The 818-IG/DB InGaAs Photodetector is supplied with a NIST traced calibration report that details individual detector responsivity measured with and without attenuator. Exclusive OD3 attenuator technology extends the calibrated optical dynamic range of our photodiode sensor heads by

Description: Quadrant photodiodes are discrete components that usually feature four optically active areas separated by a small gap. These photodiodes are used in many applications for detecting the position of laser beams, collimators and other applications to facilitate adjustment. Features:

• Spectral Response Range: 1,064 nm
• Active Area Diameter or Length: 5.300000000000001 mm
• Rise Time: 12 ns
• Dark Current: 1.5 nA

Description: 3 compact Silicon Junctions on a single Die PR5020 and PR50221 are triple silicon photodiodes with three separate cathodes and one common anode. Therefore, the three segments allow to resolve two transitions. With a wider and thinner photodiode in the center of the die, the PR5020 and

• Sensitivity: 0.58 A/W
• Operating Temperature: -40 to 85 C
• Dark Current: 0.052 nA
• Photodiode Spectral Response: IR, Visible

Description: The 818-BB-30 High Speed InGaAs Detector consists of a free-space 800 to 1750 nm battery biased InGaAs photodiode with a 0.10 mm active diameter and a <175 ps rise time. A lens on the window, with an acceptance angle of 20°, is used to focus the beam on the photodiiode. It

• Receiver Rise Time: 0.175 ns
• Bandwidth: 0 to 2,000 MHz
• Features: Other
• Receiver Type: PIN

Description: The 818-BB-35 High Speed InGaAs Detector consists of a free-space 830 to 1650 nm Battery Biased InGaAs photodetector with a 0.032 mm active diameter and a <25 ps rise time. It includes a built-in bias supply consisting of two standard 3 V lithium cells (6V total bias) and a 50 ohm BNC

• Receiver Rise Time: 0.025 ns
• Bandwidth: 0 to 15,000 MHz
• Features: Other
• Receiver Type: PIN