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Supplier: Qorvo
Description: Qorvo's CMD247 is a wideband (Ka, Q, U band) GaAs MMIC low phase noise RF / Microwave amplifier (LPNA) ideally suited for military, space and communications systems. At 35 GHz the amplifier MMIC delivers 13 dB of gain, a saturated output power of +15
- Operating Range: Military
- Package Type: Other
- RoHS Compliant: Yes
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Supplier: Qorvo
Description: Qorvo's CMD262 is a 5 W GaN MMIC power amplifier die ideally suited for Ka-band communications systems where high power and high linearity are needed. The device delivers greater than 26 dB of gain with a corresponding output 1 dB compression point of +37.5 dBm and
- Device Type: Power Operational Amplifiers
- Operating Range: Military
- Package Type: Other
- RoHS Compliant: Yes
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Supplier: Qorvo
Description: Qorvo's TGA4516 is a high power amplifier (HPA) MMIC for Ka band applications. The part is designed using Qorvo's 0.15um power pHEMT process. The small chip size is achieved by utilizing Qorvo's 3 metal layer interconnect (3MI) design technology that allows
- Amplifier Type: Power Amplifier
- Applications: Military / Defense, Radar Systems, SATCOM Amplifier
- Frequency Range: 30000 to 40000 MHz
- Maximum Gain: 18 dB
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Supplier: Qorvo
Description: Qorvo's CMD299 is a highly efficient GaAs MMIC low noise amplifier ideally suited for EW and communications systems where small size and low power consumption are needed. The device is optimized for 30 GHz and delivers greater than 17 dB of gain with a corresponding noise figure
- Amplifier Type: Low Noise Amplifier
- Applications: Military / Defense, Radar Systems, SATCOM Amplifier
- Frequency Range: 18000 to 40000 MHz
- Maximum Gain: 17 dB
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Supplier: Custom MMIC
Description: The CMD293 is a wideband medium power GaAs MMIC driver amplifier ideally suited for military, space and communications systems where small size and high linearity are needed. At 30 GHz the device delivers 20 dB of gain with a corresponding output 1 dB compression point of +26
- Amplifier Type: Other
- Frequency Range: 20000 to 45000 MHz
- MMIC Technology Required: Yes
- Maximum Gain: 20 dB
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Supplier: Custom MMIC
Description: The CMD292 is wideband GaAs MMIC distributed driver amplifier die which operates from DC to 30 GHz. The amplifier delivers 13 dB of gain with a corresponding output 1 dB compression point of +27 dBm and output IP3 of 33 dBm at 15 GHz. The CMD292 is a 50 ohm matched design which
- Amplifier Type: Other
- Frequency Range: Up to 30000 MHz
- MMIC Technology Required: Yes
- Maximum Gain: 13 dB
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Supplier: Custom MMIC
Description: The CMD262 is a 5 W GaN MMIC power amplifier die ideally suited for Ka-band communications systems where high power and high linearity are needed. The device delivers greater than 26 dB of gain with a corresponding output 1 dB compression point of +37.5 dBm and a
- Amplifier Type: Power Amplifier
- Applications: Military / Defense, Radar Systems, SATCOM Amplifier, Terrestrial RF/Microwave Systems
- Frequency Range: 26000 to 28000 MHz
- MMIC Technology Required: Yes
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Supplier: Richardson RFPD
Description: ICP2840 is a Balanced Ka Band MMIC power amplifier achieving 39dBm of saturated output power in CW operation. Fabricated using on GaN SiC technology, ICP2840 operates from 27.5 to 31 GHz with 28% PAE and 24dB small signal gain. The balanced topology provides
- Amplifier Type: Power Amplifier
- Frequency Range: 27500 to 31000 MHz
- Maximum Gain: 22 dB
- Maximum Operating Voltage: 24 volts
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Supplier: Custom MMIC
Description: The CMD217 is a 8.5 W RF / Microwave GaN MMIC power amplifier die ideally suited for Ka band communications systems where high power and high linearity are indispensable design requirements. This device delivers greater than 20 dB of gain with a
- Amplifier Type: Power Amplifier
- Frequency Range: 28000 to 32000 MHz
- MMIC Technology Required: Yes
- Maximum Gain: 20 dB
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Supplier: Richardson RFPD
Description: The MAMF-011099 is a multifunction Ka-band module consisting of three MMICs, in a lead free 40 lead, 6.5 mm AQFN package. Functions include a low noise amplifier, power amplifier, switch, and switch driver. The RX path including the LNA and switch has a 3.6 dB
- Device Type / Applications: Front End
- IC Package Type: Other
- Supply Voltage: 5 V, Other
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Supplier: Molex Signal Tech Industrial Ltd.
Description: through Ka Band, featuring our patented Thermopad line of products which compensate for gain variation over temperature. The Thermopad® (Patent # 5,332,981) is a totally passive, surface mountable temperature variable attenuator. It requires no bias or control voltages and does not
- Attenuation: 1 to 10 dB
- Frequency Range: 36 GHz
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The family of RF GaN-on-SiC Ka-Band amplifiers covers power levels from 33 to 44 dBm, and are available in die or QFN-package formats. These devices are fabricated on the proprietary UMS GH15 GaN process, which is optimized up to 42 GHz, delivering high power, high PAE and high linearity, and making it ideal for transmitting modulated waveforms. (read more)
Browse RF Amplifiers Datasheets for Richardson RFPD -
High output power: 18 W High PAE: 40% Linear gain: 26 dB DC bias: Vd=30 V @ IDQ=680 mA MSL 3 (read more)
Browse RF Amplifiers Datasheets for Richardson RFPD -
Qorvo's QPA2811 is a packaged, high-power X-band amplifier fabricated on Qorvo’s production 0.15 um GaN on SiC process (QGaN15). Covering 8.5?-?10.55 GHz, the QPA2811 provides 48.9 dBm of saturated output power and 27.9 dB of large-signal gain while achieving 48.5 % power (read more)
Browse Amplifier and Comparator Chips Datasheets for Qorvo -
Macom's CMPA851A MMIC High Power Amplfier family (read more)
Browse RF Amplifiers Datasheets for Richardson RFPD -
Qorvo's QPA1111 is a high power, packaged X-Band MMIC amplifier fabricated using Qorvo's production 0.15 um GaN-on-SiC process (QGaN15). The QPA1111 operates from 8.5 – 10.5 GHz, typically provides 30 W saturated output power with power-added efficiency of 45% and small signal (read more)
Browse Amplifier and Comparator Chips Datasheets for Qorvo -
Qorvo's QPA4003 is a Ka-band power amplifier fabricated on Qorvo's 0.15um GaN on SiC process (QGaN15). Operating from 26.5 to 29.5 GHz, it achieves 1.25 W linear power with lower than −33 dBc intermodulation distortion products and 29 dB small signal gain. Saturated output power is greater (read more)
Browse Amplifier and Comparator Chips Datasheets for Qorvo -
Qorvo's QPA1724D is a high power, packaged Ku-Band MMIC amplifier fabricated using Qorvo's production 0.15 um GaN-on-SiC process (QGaN15). The QPA1724D targets the 17.3 – 21.2 GHz Satcom band providing 5 Watts of linear power with third-order intermodulation distortion products of 22 d (read more)
Browse Amplifier and Comparator Chips Datasheets for Qorvo -
Qorvo's QPA1722 is a high power, packaged K-Band MMIC amplifier fabricated using Qorvo's production 0.15 um GaN-on-SiC process (QGaN15). The QPA1722 targets the 17.7 – 20.2 GHz Satcom band while providing 5 Watts of linear power with third-order intermodulation distortion products (read more)
Browse Amplifier and Comparator Chips Datasheets for Qorvo -
Qorvo's QPA0016 is a high power, packaged Ku-Band MMIC amplifier fabricated using Qorvo's production 0.15 um GaN-on-SiC process (QGaN15). The QPA0016 targets the 13.75-14.5 GHz Satcom band while providing 5-Watts of linear power with third-order intermodulation distortion products of 25 d (read more)
Browse Power Operational Amplifiers Datasheets for Qorvo -
Qorvo's QPA1314 is a packaged high power MMIC amplifier, fabricated on Qorvo's production 0.15 um GaN on SiC process (QGaN15). QPA1314 is targeted for 13.75 – 14.5 GHz Satcom band. Linear power is 20 W with 25 dBc third order intermodulation distortion products. It (read more)
Browse Amplifier and Comparator Chips Datasheets for Qorvo
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High-Efficiency, Ka-band GaN Power Amplifiers
. Biased for maximum power at 28 V, it achieved an output power of 32 W CW at 32.5 GHz with an associated PAE of 30%. This is the highest reported efficiency at this frequency for a packaged amplifier with greater than 30 W CW output power. Keywords- GaN MMIC, SSPA, power amplifier, Ka-band
More Information Top
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Performance Optimization of Ka-Band MMIC Power Amplifier Using On-Wafer Pulsed Power Test
A Ka band MMIC power amplifier was used as the test device to verify this test technique.
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A Ka band balanced amplifier with six-port power divider
Two commercially available Ka band MMIC power amplifiers , part numbered FMM5804VY, were used because of their high performance and simpler mounting process compared with die ones.
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Ka‐band 1‐W PHEMT MMIC power amplifiers on 2mil‐thick GaAs substrates
… Tan, P.H. Liu, A. Freudenthal, D.C. Streit, G. Luong, R. Lai, M.V. Aust, B. Allen, T.S. Lin, and H.C. Yen, A power HEMT production process for high-efficiency Ka - band MMIC power amplifiers , IEEE GaAs IC Symp …
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High efficiency Ka-band Gallium Nitride power amplifier MMICs
Abstract — The design and performance of two high efficiency Ka - band power amplifier MMICs utilizing a 0.15μm GaN HEMT process technology is presented.
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A Ka-band HBT MMIC power amplifier
The increasing demand for Ka-band power amplifiers for commercial systems such as mobile satellite communication and local multi- point distribution service (LMDS) has created considerable interest in the development of Ka - band MMIC power amplifiers [l-31.
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High-efficiency power amplifier MMICs in 100 nm GaN technology at Ka-band frequencies
[2] C. F. Campbell, K. Ming-Yih and S. Nayak, "High efficiency Ka - band power amplifier MMICs fabricated with a 0.15µm GaN on SiC HEMT process," Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International , vol., no., pp.1-3 …
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Ka-band MMIC high power amplifier (4W at 30GHz) with record compact size
[5] M.Komaru et al., “1 Watt Compact Ka - Band MMIC Power Amplifiers Using Lumped Element Matching Circuits”, 1998 MTT-S Digest, 1659- 1662.
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1-Watt Ka-band coplanar high power MMIC amplifiers using 0.15-μm GaAs PHEMTs
Fig. 9: Benchmarks for output power P+,s of Ka - band power MMIC amplifiers using microstrip (MS) [2] or coplanar(CPW) technology.
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Advanced millimeter-wave MMIC technology and circuit development
… Tan, P.H. Liu, A. Freudenthal, D. C. Streit, G. Luong, R. Lai, M. V. Aust, B. Allem T. S. Lin, and H. C. Yen, EtA power HEMT production process for high-efficiency Ka - band MMIC power amplifiers ,'' 1993 IEEE GGs …
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Developing GaN HEMTs for high efficiency
[7] M. Micovic, et.al., " Ka - band MMIC Power Amplifier in GaN HFET Technology", 2004 IEEE MTT-S Int.