Linear Photodiode Arrays

Description: Multichannel array photodetectors consist of a number of single element photodiodes laid adjacent to each other forming a one-dimensional sensing area common cathode substrate. They can perform simultaneous measurements of a moving beam or beams of many wavelengths. They feature low

• Sensitivity: 0.6 A/W
• Spectral Response Range: 200 to 1,100 nm
• Active Area Diameter or Length: 1.57 mm
• Active Area Height: 1.22 mm

Description: Photodiode array for DWDM monitor

• Sensitivity: 0.95 A/W
• Spectral Response Range: 900 to 1,700 nm
• Dark Current: 0.2 nA
• Array: Array

Description: These avalanche photodiodes were developed specifically for LIDAR applications and laser rangefinders. The series of products contains linear and matrix arrays with multiple sensors on one monolithic die, e.g. 8, 16, 64 pixels. Special features Fast rise time in 900 nm range Low

• Spectral Response Range: 850 to 1,070 nm
• Active Area Diameter or Length: 4 mm
• Rise Time: 5 ns
• Dark Current: 7 to 75 nA

Description: 46-element Si photodiode array for UV to NIR The S4114-46Q is a Si photodiode linear array mounted in a ceramic DIP (Dual Inline Package). This photodiode array is primarily developed for low-light-level detection such as spectrophotometry, and cover

• Sensitivity: 0.5 A/W
• Spectral Response Range: 190 to 1,000 nm
• Rise Time: 100 ns
• Dark Current: 0.06 nA

Description: Compact, easy-to-use driver circuit The C9118-01 CMOS driver circuit is designed for photodiode arrays with amplifier.The C9118-01 operates a linear image sensor by just inputting two signals (M-CLK and M-RESET) and a signal +5 V supply. The C9118-01 is assembled on a compact

Description: range over several orders of magnitude, from 10 picowatt/cm2 to several hundred MW/cm2. Our knowledgeable and friendly staff are available to support the design of photodiodes from concept through final application of the product in manufacturing. Design flexibility has made

• Photodiode Type: PN Photodiode
• Photodiode Material: Silicon

Description: SENSOR PHOTODIODE 950NM ARRAY

• Sensor Technology: Optical Linear Encoder

Description: No Description Provided

• Spectral Response Range: 410 to 950 nm
• Active Area Diameter or Length: 1 mm
• Active Area Height: 1 mm
• Rise Time: 0.3 ns

Description: The TSL1401CL linear sensor array consists of a 128 × 1 array of photodiodes, associated charge amplifier circuitry, and an internal pixel data-hold function that provides simultaneous-integration start and stop times for all pixels. The array is made up of 128

• Operating Temperature: -25 to 85 C
• Array: Array

Description: The TSL3301−CL is a high-sensitivity 300-dpi, linear optical sensor array with integrated 8-bit analog-to-digital converters. The array consists of 102 pixels, each measuring 85 μm (H) by 77 μm (W) and spaced on 85 μm centers. Associated with each pixel is a charge

• Operating Temperature: -25 to 85 C
• Array: Array

Description: the 1.0 um to 2.6um range, using InP material as the base substrate. Marktech is currently producing these high reliability wafers in 2", 3" and 4" diameters. Among the applications for these wafers are photo detectors, linear arrays and image sensors. Photo detectors processed using

• Active Area Diameter or Length: 1.5 mm
• Photodiode Material: Indium Gallium Arsenide
• Features: Other
• Photodiode Type: PIN Photodiode

Description: The high resolution Xlin-1.7-3000 InGaAs detector is specifically designed for earth observation. The detector is based on mechanical butting of three InGaAs photodiode arrays with each 1024 pixels on a 25 µm pixel pitch, forming a nearly continuous line of 2900 pixels. The sensors

• Spectral Range: 0.9 to 1.7 µm
• Output Channels: 3
• Operating Temperature Range: -40 to 85 C
• Array Type: Linear Array

Description: Current output, high UV sensitivity, excellent linearity, low power consumption NMOS linear image sensors are self-scanning photodiode arrays designed specifically as detectors for multichannel spectroscopy. The scanning circuit is made up of N-channel MOS transistors, operates

• Applications: Industrial

Description: range. Refer to the part number generator tool on page two. The utilization of the MP-2350RX, in conjunction with the appropriate MP-2350TX RF/Fiber Optic Transmitter, forms a broadband link capable of supporting the transmission of RF signals over singlemode optical fiber for use in a wide

• Responsivity: 0.85 to 0.9 A/W
• Operating Temperature: -40 to 185 F
• Connector Type: FC, SC
• Features: Other

Description: single photodiode. It has not been demonstrated if this method is effective for photo-array instruments such as those using a CCD or a diode array detector. 1.4 This test method is applicable to 10-mm pathlength cuvette formats and instruments covering a wavelength range within

Description: Orion is a digital high speed line scan sensor with configurable photo-diode size. Over the SPI interface the photo-diode size can be configured to a 10μm x 10μm size or 10μm x 200μm size. Independently form the photo-diode the conversion capacitance can be configured over SPI interface. The larger

• Pixel Size: 200 µm
• Dynamic Range: 59.44 dB
• Operating Temperature: 0 to 50 C
• Supply Voltage: 3.3 volt

Description: high-sensitivity Silicon photodiode linear array & exit-port photodiode. Elevate your instruments with precise, efficient measurements of 340, 405, 450, 492, 510, 546, 578, 630, 700, & 800 nm wavelengths.

• Spectral / Wavelength Range: 340 to 800 nm

Description: high-sensitivity Silicon photodiode linear array & exit-port photodiode. Elevate your instruments with precise, efficient measurements of 340, 380, 405, 450, 505, 546, 578, 630, 670, & 700 nm wavelengths.

• Spectral / Wavelength Range: 340 to 700 nm

Description: high-sensitivity Silicon photodiode linear array & exit-port photodiode. Elevate your instruments with precise, efficient measurements of 340, 380, 405 436, 480, 510, 546, 580, 630, & 700 nm wavelengths.

• Spectral / Wavelength Range: 340 to 700 nm

Description: The ISL29101 is a low power ambient Light-to-Voltage optical sensor combining a photodiode array, a current amplifier and a micropower operational amplifier on a single monolithic IC. Similar to the human eye, the photodiode array has a peak response at 550nm and spans

Description: high-sensitivity Silicon photodiode linear array. Elevate your instruments with precise, efficient measurements of 340, 405, 450, 505, 546, 578, 620, 670, & 700 nm wavelengths.

• Spectral / Wavelength Range: 340 to 700 nm

Description: The ISL29112 is a low cost, light-to-voltage silicon optical sensor combining a photodiode array, a non-linear current amplifier, and a micropower op amp on a single monolithic IC. Similar to the human eye, the photodiode array has peak sensitivity at 550nm and

Description: The Nexera SR UHPLC system is built around the SPD-M30A photodiode array detector, which has several new features for unmatched performance in sensitivity and stability, linearity, spectral resolution, and peak deconvolution. This high-end system is designed to produce the best

• Analysis Method: Analytical Analysis
• Injection Method: Auto-sampler Injection
• General Features: Built in Chromatograph
• User Interface: Digital Front Panel

Description: detection capabilities with ACQUITY UPLC Fluorescence (FLR), Tunable UV (TUV), Photodiode Array (PDA), Evaporative Light Scattering (ELS), and Refractive Index (RI) detectors to single, tandem, and time-of-flight mass spectrometers Easily compatible with third-party MS solutions

• Analysis Method: Analytical Analysis
• Remote Interface: Computer Interface
• Instrument Type: Fixtured or Permanent
• Detector Type: Fluorescence Detector, Light Scattering Detector, Mass Spectroscopy Detector, Refractive Index Detector, Ultraviolet / Visible Light Detector