Linear Photodiode Arrays

Description: Quantum Devices offers the ability to customize a planar silicon photodiode with either single or multiple diode structures on a single chip. This configuration is a p-on-n structure and can be used to detect the presence and absence of minute quantities of light. The linearity of this

• PN, PIN, or Avalanche: PN Photodiode
• Photodiode Material: Silicon

Description: These avalanche photodiodes were developed specifically for LIDAR applications and laser rangefinders. The series of products contains linear and matrix arrays with multiple sensors on one monolithic die, e.g. 8, 16, 64 pixels. Special features Fast rise time in 900 nm

• Active Area Diameter or Length: 4 mm
• Array: Yes
• Dark Current: 7 to 75 nA
• PN, PIN, or Avalanche: Avalanche Photodiode

Description: Photodiode array for DWDM monitor

• Array: Yes
• Dark Current: 0.2000 nA
• Photodiode Material: Indium Gallium Arsenide
• Sensitivity: 0.9500 A/W

Description: Multichannel array photodetectors consist of a number of single element photodiodes laid adjacent to each other forming a one-dimensional sensing area common cathode substrate. They can perform simultaneous measurements of a moving beam or beams of many wavelengths. They feature low

• Active Area Diameter or Length: 4.39 mm
• Active Area Height: 0.8900 mm
• Array: Yes
• Noise Equivalent Power (NEP): 4.80E-15 W/Hz^½

Description: Multichannel array photodetectors consist of a number of single element photodiodes laid adjacent to each other forming a one-dimensional sensing area common cathode substrate. They can perform simultaneous measurements of a moving beam or beams of many wavelengths. They feature low

• Active Area Diameter or Length: 1.52 mm
• Active Area Height: 2.79 mm
• Array: Yes
• PN, PIN, or Avalanche: PIN Photodiode

Description: 35 element Si photodiode array for UV to NIR The S4111-35Q is a Si photodiode linear array mounted in a ceramic DIP (Dual Inline Package). This photodiode array is primarily developed for low-light-level detection such as spectrophotometry, and cover

• Array: Yes
• Dark Current: 0.0100 nA
• Photodiode Material: Silicon
• Rise Time: 1200 ns

Description: 16 element Si photodiode array for UV to NIR The S4111-16Q is a Si photodiode linear array mounted in a ceramic DIP (Dual Inline Package). This photodiode array is primarily developed for low-light-level detection such as spectrophotometry, and cover

• Array: Yes
• Dark Current: 0.0050 nA
• Photodiode Material: Silicon
• Rise Time: 500 ns

Description: 35-element Si photodiode array for UV to NIR The S4114-35Q is a Si photodiode linear array mounted in a ceramic DIP (Dual Inline Package). This photodiode array is primarily developed for low-light-level detection such as spectrophotometry, and cover

• Array: Yes
• Dark Current: 0.0600 nA
• Photodiode Material: Silicon
• Rise Time: 100 ns

Description: SENSOR PHOTODIODE 950NM ARRAY

• Technology: Optical Linear Encoder

Description: SENSOR PHOTODIODE 950NM ARRAY

• Technology: Optical Linear Encoder

Description: SENSOR PHOTODIODE 950NM ARRAY

• Technology: Optical Linear Encoder

Description: UV & blue light solidstate photon detector/counter; 2mm sensor pitch

• Active Area Diameter or Length: 1 mm
• Active Area Height: 1 mm
• Array: Yes
• Dark Current: 10000 nA

Description: Visible light solidstate photon detector/counter; 2mm sensor pitch

• Active Area Diameter or Length: 1 mm
• Active Area Height: 1 mm
• Array: Yes
• Dark Current: 10000 nA

Description: SENSOR PHOTODIODE 420NM ARRAY

• Technology: Optical Linear Encoder

Description: The TSL1401CL linear sensor array consists of a 128 × 1 array of photodiodes, associated charge amplifier circuitry, and an internal pixel data-hold function that provides simultaneous-integra tion start and stop times for all pixels. The array is made up of 128

• Array: Yes
• Operating Temperature: -25 to 85 C

Description: The TSL3301-CL is a high-sensitivity 300-dpi, linear optical sensor array with integrated 8-bit analog-to-digital converters. The array consists of 102 pixels, each measuring 85 µm (H) by 77 µm (W) and spaced on 85 µm centers. Associated with each pixel is a charge integrator

• Array: Yes
• Operating Temperature: -25 to 85 C

Description: the 1.0 um to 2.6um range, using InP material as the base substrate. Marktech is currently producing these high reliability wafers in 2", 3" and 4" diameters. Among the applications for these wafers are photo detectors, linear arrays and image sensors. Photo detectors processed using

• Active Area Diameter or Length: 0.1000 mm
• PN, PIN, or Avalanche: PIN Photodiode
• Photodiode Material: Indium Gallium Arsenide
• Photodiode Package / Mounting: Other

Description: +75 °C. Active area: 1 to 300 mm². Single elements, quadrants, linear arrays and matrix arrays Spectrums Detected = Infrared, Visible Light Wavelength of Peak Sensitivity = 340nm Package Type = TO-5 Mounting Type = Through Hole Diode Material = Si Minimum Wavelength Detected =

• Photodiode Material: Silicon
• Photodiode Package / Mounting: Other
• Sensitivity: 0.6500 A/W
• Spectral Response: Visible, IR

Description: +75 °C. Active area: 1 to 300 mm². Single elements, quadrants, linear arrays and matrix arrays Spectrums Detected = Infrared, Visible Light Wavelength of Peak Sensitivity = 900nm Package Type = TO-5 Mounting Type = Through Hole Diode Material = Si Minimum Wavelength Detected =

• Photodiode Material: Silicon
• Photodiode Package / Mounting: Other
• Rise Time: 12 ns
• Spectral Response: Visible, IR

Description: +75 °C. Active area: 1 to 300 mm². Single elements, quadrants, linear arrays and matrix arrays Spectrums Detected = Infrared, Visible Light Wavelength of Peak Sensitivity = 900nm Package Type = TO-18 Mounting Type = Through Hole Diode Material = Si Minimum Wavelength Detected =

• Photodiode Material: Silicon
• Photodiode Package / Mounting: Other
• Rise Time: 7 ns
• Sensitivity: 0.2100 A/W

Description: +75 °C. Active area: 1 to 300 mm². Single elements, quadrants, linear arrays and matrix arrays Spectrums Detected = Infrared, Visible Light Wavelength of Peak Sensitivity = 900nm Package Type = TO-5 Mounting Type = Through Hole Diode Material = Si Minimum Wavelength Detected =

• Photodiode Material: Silicon
• Photodiode Package / Mounting: Other
• Sensitivity: 0.2100 A/W
• Spectral Response: Visible, IR

Description: The high resolution Xlin-1.7-3000 InGaAs detector is specifically designed for earth observation. The detector is based on mechanical butting of three InGaAs photodiode arrays with each 1024 pixels on a 25 µm pixel pitch, forming a nearly continuous line of 2900 pixels. The sensors

• Array Type: Linear Array
• Operating Temperature Range: -40 to 85 C
• Output Channels: 3
• Spectral Range: 0.9000 to 1.7 µm

Description: Orion is a digital high speed line scan sensor with configurable photo-diode size. Over the SPI interface the photo-diode size can be configured to a 10µm x 10µm size or 10µm x 200µm size. Independently form the photo-diode the conversion capacitance can be configured over SPI

• Array Type: Linear Array
• Dynamic Range: 59.44 dB
• Image Sensor Output: Other
• Image Sensor Type: Monochrome

Description: a single detector, that is, a photomultiplier tube or a single photodiode. It has not been demonstrated if this method is effective for photo-array instruments such as those using a CCD or a diode array detector. 1.4 This test method is applicable to 10-mm pathlength cuvette

Description: , that is, a photomultiplier tube or a single photodiode. It has not been demonstrated if this method is effective for photo-array instruments such as those using a CCD or a diode array detector. 1.4 This test method is applicable to 10-mm pathlength cuvette formats and

Description: wide array of communication applications. The link applications include antenna remoting, time and frequency reference distribution, RF delay lines, telemetry tracking, and point-to-point RF transmission. The receiver utilizes a high speed, low distortion PIN photodiode detector that

• Cable Type: Single Mode
• Connector Type: FC, SC, Other
• Operating Temperature: -40 to 185 F
• Photodiode Type: PIN

Description: detector, that is, a photomultiplier tube or a single photodiode. It has not been demonstrated if this method is effective for photo-array instruments such as those using a CCD or a diode array detector. 1.4 This test method is applicable to 10 mm pathlength cuvette formats and

Description: data with an integrated high-sensitivity Silicon photodiode linear array & exit-port photodiode. Elevate your instruments with precise, efficient measurements of 340, 380, 405, 450, 505, 546, 578, 630, 670, & 700 nm wavelengths.

• Spectral / Wavelength Range: 340 to 700 nm

Description: data with an integrated high-sensitivity Silicon photodiode linear array & exit-port photodiode. Elevate your instruments with precise, efficient measurements of 340, 405, 450, 492, 510, 546, 578, 630, 700, & 800 nm wavelengths.

• Spectral / Wavelength Range: 340 to 800 nm

Description: data with an integrated high-sensitivity Silicon photodiode linear array & exit-port photodiode. Elevate your instruments with precise, efficient measurements of 340, 380, 405 436, 480, 510, 546, 580, 630, & 700 nm wavelengths.

• Spectral / Wavelength Range: 340 to 700 nm

Description: , rejecting UV light and IR light. The output voltage is proportional to the visible light intensity from 0.5 lux up to 10,000 lux. However, the input luminance range can go up to 30,000 lux with some compromise in linearity. A dark current compensation circuit aids the photodiode

Description: with an integrated high-sensitivity Silicon photodiode linear array. Elevate your instruments with precise, efficient measurements of 340, 405, 450, 505, 546, 578, 630 670, & 700 nm wavelengths.

• Spectral / Wavelength Range: 340 to 700 nm

Description: The Nexera SR UHPLC system is built around the SPD-M30A photodiode array detector, which has several new features for unmatched performance in sensitivity and stability, linearity, spectral resolution, and peak deconvolution. This high-end system is designed to produce the best

• Analysis Method: Analytical Analysis
• Built in Chromatograph: Yes
• Display Options: Digital Readout
• Injection Method: Auto-sampler Injection

Description: tasks, including ACQUITY UPLC 1.7 µm columns, VanGuard pre-columns or ACQUITY UPLC HSS and HSS T3 1.8 µm columns Extended detection capabilities with ACQUITY UPLC Fluorescence (FLR), Tunable UV (TUV), Photodiode Array (PDA), Evaporative Light Scattering (ELS), and Refractive Index (RI

• Analysis Method: Analytical Analysis
• Computer Interface: Yes
• Detection Method: Ultraviolet / Visible Light Detector, Refractive Index Detector, Fluorescence Detector, Light Scattering Detector, Mass Spectroscopy Detector
• Instrument Type: Fixtured or Permanent