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Supplier: Richardson RFPD
Description: RF Power Mosfet. N-Channel Push - Pull Pair. The ARF477FL is a matched pair of RF power transistors in a common source configuration. It is designed for high voltage push-pull or parallel operation in narrow band ISM and MRI power amplifiers up to 100
- Operating Frequency: 0.0 to 100 MHz
- Output Power: 400 watts
- Package Type: Other
- Power Gain: 16 dB
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Supplier: Microchip Technology, Inc.
Description: input CMOS compatible 5.0 to 12V total supply voltage Smart logic threshold Low jitter design Quad matched channels Drives two P- and two N-channel MOSFETs Outputs can swing below ground Low inductance quad flat no-lead package High-performance thermally-enhanced QFN
- Transistor Type: MOSFET
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Supplier: Microchip Technology, Inc.
Description: MD1213 is a high speed, dual MOSFET driver. It is designed to drive high voltage P and N-channel MOSFET transistors for medical ultrasound and other applications requiring a high output current for a capacitive load. The high-speed input stage of the MD1213 can operate from 1.8 to 5.0V
- Transistor Type: MOSFET
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Supplier: Richardson RFPD
Description: The ARF476FL is a matched pair of RF power transistors in a common source configuration. It is designed for high voltage push-pull or parallel operation in narrow band ISM and MRI power amplifiers up to 150 MHz.
- Operating Frequency: 0.0 to 150 MHz
- Output Power: 900 watts
- Package Type: Other
- Power Gain: 16 dB
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Supplier: Richardson RFPD
Description: The ARF475FL is a matched pair of RF power transistors in a common source configuration. It is designed for high voltage push-pull or parallel operation in narrow band ISM and MRI power amplifiers up to 150 MHz.
- Operating Frequency: 30 to 150 MHz
- Output Power: 900 watts
- Package Type: Other
- Power Gain: 15 dB
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Supplier: Microchip Technology, Inc.
Description: output low. This assists in properly precharging the AC coupling capacitors that may be used in series in the gate drive circuit of an external PMOS and NMOS transistor pair. Additional Features Mixed inversion MOSFET driver 6.0ns rise and fall time 2.0A peak
- Transistor Type: MOSFET
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Supplier: Microchip Technology, Inc.
Description: output low. This assists in properly precharging the AC coupling capacitors that may be used in series in the gate drive circuit of an external PMOS and NMOS transistor pair. Additional Features Inverting MOSFET driver 6.0ns rise and fall time 2.0A peak output
- Transistor Type: MOSFET
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Supplier: Win Source Electronics
Description: Manufacturer: Advanced Linear Devices Inc. Win Source Part Number: 1051997-ALD1117SAL Packaging: Tube/Rail Mounting: SMD (SMT) FET Type: 2 P-Channel (Dual) Matched Pair FET Feature: Standard Categories: Discrete Semiconductor Products Status: Active Temperature
- PD: 500 milliwatts
- Package Type: SOT3, Other
- Packing Method: Rail, Shipping Tube / Stick Magazine, Other
- Polarity: P-Channel
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The ALD1105 by Advanced Linear Devices is engineered for precision and performance. It combines the power of an N-channel MOSFET with a P-channel MOSFET in a single package. The transistor pair is matched for minimum offset voltage and differential thermal (read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Advanced Linear Devices, Inc. -
The ALD1103, by Advanced Linear Devices, is a monolithic dual N-channel and P-channel matched transistor pair designed for precision and versatility. The chip combines the power of N-channel and P-channel MOSFET pairs in one package. This dual configuration is (read more)
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NORTHVALE, New Jersey, USA - New Yorker Electronics has introduced Vishay’s new 80V symmetric dual n-channel power MOSFET that combines high and low side TrenchFET® Gen IV MOSFETs in a single 3.3mm by 3.3mm PowerPAIR® 3x3FS package. Designed for power conversion in (read more)
Browse Transistors Datasheets for New Yorker Electronics Co., Inc. -
The dual N-Channel MOSFET array by Advanced Linear Devices is precision factory-matched using ALD's EPAD® CMOS technology. These dual monolithic devices feature a Zero-Threshold™ voltage, which enables circuit designs with input/output signals (read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Advanced Linear Devices, Inc. -
applications in -2V to -10V systems. The transistor pairs are matched to offer low input bias current, fast switching speed, and almost infinite current gain in low-frequency environments. The chip is useful for precision current mirrors, sources, voltage choppers, differential amplifier input stages (read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Advanced Linear Devices, Inc. -
Wolfspeed offers a family of 1200 V silicon carbide MOSFETs and Schottky diodes that are optimized for use in high power applications such as UPS, motor control and drives, switched-mode power supplies, solar and energy storage systems, electric vehicle charging, high (read more)
Browse Diodes Datasheets for DigiKey -
zero-power voltage divider at selected voltages Equipped with matched current mirrors and current sources Includes a zero-power mode maximum voltage limiter Available to order at (read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Advanced Linear Devices, Inc. -
The ALD310702 from Advanced Linear Devices is a monolithic quad P-channel MOSFET array with unrivaled precision in temperature tracking and simplified bias circuitry. The matched pair circuit is designed for the next generation of products requiring extremely low (read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Advanced Linear Devices, Inc. -
The ALD1115 MOSFET by Advanced Linear Devices is a monolithic complementary N-channel and P-channel transistor pair that is designed for a broad range of analog applications. It contains an N-channel and a P-channel MOSFET in one package. These chips are (read more)
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technology, advanced software including artificial intelligence for greater autonomy, and robust computer hardware. The increased electrical connectivity between the various subsystems must be managed adequately to prevent system outages. To prevent the propagation of power (read more)
Browse Power Diodes Datasheets for MDE Semiconductor, Inc.
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ARF450 MOSFET - Microsemi Power Products Group, Formerly Advanced Power Technology RF
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Optimized Wind Energy Harvesting System Using Resistance Emulator and Active Rectifier for Wireless Sensor Nodes
… active rectifier with a low input voltage of 1.2 V has been increased from 40% to 70% due to the significant reduction in the ON-state voltage drop (from 0.6 to 0.15 V) across each pair of MOSFETs used. The proposed robust low- power microcontroller-based resistance emulator is im- plemented with closed-loop resistance feedback control to ensure close impedance matching between the source and the load, result- ing in an efficient power conversion.
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Megasonic transducer drive utilizing MOSFET DC-to-RF inverter with output power of 600 W at 1 MHz
… drive consists of the following: 1) a drive signal generator using a digital-type voltage-controlled oscillator (VCO); 2) an inverter drive using a pair of flip-flops; 3) a 600-W-output MOSFET dc-to-RF power inverter; and 4) an … The drive is connected to the megasonic transducer through a matching capacitor and a coaxial cable.
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An Efficient High-Frequency Drive Circuit for GaN Power HFETs
2) SVX is used to implement the integrated drive circuit so that, instead of discrete power MOSFETs , HV nMOS and pMOS are used for the “totem-pole” pair in the resonant drive circuit. … sizes of the HV transistors can be carefully chosen to obtain a good match between the driver …
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Class D Power Amplifier for Audio Beam System
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Fast‐response VHF pulsed 2 KW power amplifiers
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