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Notice of Violation of IEEE Publication Principles A Zero-Second-IF SiGe BiCMOS Satellite Radio Tuner Using a Single PLL for Both RF and IF LO Generation and a...
It takes advantage of both the high fT bipolar devices for the high bandwidth signal path and of the low parasitic capacitance MOSFETs for realizing a linear RF attenuator and implementing tuner’s interface, calibration circuit and digital control state machine.
A Silicon Cmos Monolithic Rf And Microwave Switching Element
This paper describes promising early results of an on-going program investigating the use of silicon CMOS field effect transistor ( MOSFET ) technology for RF and microwave FET switch and attenuator elements.
A 25-GHz Compact Low-Power Phased-Array Receiver With Continuous Beam Steering in CMOS Technology
The reflection-type attenuator in- cludes a quadrature coupler with two variable resistors (M1 and M2 MOSFETs ), where M1 and M2 absorb different level of RF signal by controlling their gate biases.
Subject Index
high-accuracy digital 5 bit 0.8-2 GHz MMIC RF attenuator for cellular phones. … N., + , MWSYM 01 2231-2234 vol.3 high-speed digital ICs, sig. integrity, MOSFET modeling, LE-FDTD …
Notice of Violation of IEEE Publication Principles A BiCMOS SiGe Direct-Conversion DBS Satellite TV Tuner with on-chip ADCs for SiP Integration with a CMOS Dem...
A good linearity and a small insertion loss in the RF attenuator was achieved by using a FET switched resistor architecture. The MOSFETs are either OFF or ON in triode region, and therefore they do not contribute 1/f …
RF CMOS Cells for Wireless Applications
In this application, an externally applied voltage to the gate governs the MOSFET channel resistance. The gain control in this attenuator circuit operates directly at RF frequencies.
Chip-level spray cooling of an LD-MOSFET RF power Amplifier
The gate voltage of the LD- MOSFET was varied between 2.6 and 3.6 V to … In all of our experiments Pin and Pout were measured by an RF power meter after precise reduction (30 dB) by an oil-filled power attenuator .
Nonlinear MOSFET model for the design of RF power amplifiers
Another difficulty in measuring the S-parameters of RF power MOSFETs lies in the possibility of the device oscillating and damaging the ANA. With a 5 W MOSFET, the ANA could be protected by placing attenuators between the ports and …
Challenges in 100W CW UHF SSPA for communication payloads
RF MOSFETs have been used in balanced amplifier configuration to achieve the required output. The SSPA has a ground commandable attenuator to set the overall gain of the SSPA.
Notice of Violation of IEEE Publication Principles A Dual Channel DVB-S/S2 Direct-Conversion Satellite TV Tuner with On-Chip ADCs and Multiple DC Offset Cancel...
A good linearity and a small insertion loss in the RF attenuator was achieved by using a FET switched resistor architecture. The MOSFETs are either OFF or ON in triode region, and therefore they do not contribute 1/f …

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