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Supplier: Microchip Technology, Inc.
Description: a circuit breaker with or without automatic retry. The MIC5020's maximum supply voltage lends itself to control applications using up to 50V. The MIC5020 can control MOSFETs that switch voltages greater than 50V.A rising or falling edge on the input results in a current
- Features: MOSFET
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Supplier: Microchip Technology, Inc.
Description: The HV9967B is an average-mode current control LED driver IC operating in a constant off-time mode. The IC features an integrated 60V, 0.8Ω MOSFET that can be used as a stand-alone buck converter switch, or connected as a source driver for driving an external high-voltage
- Features: RoHS Compliant
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Supplier: Renesas Electronics Corporation
Description: The ISL6144 ORing MOSFET Controller and a suitably sized N-Channel power MOSFET(s) increases power distribution efficiency and availability when replacing a power ORing diode in high current applications.brbr In a multiple supply, fault tolerant, redundant power distribution
- Features: Other
- Package Type: SSOP
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Supplier: Microchip Technology, Inc.
Description: MD2134 consists of CMOS digital logic input circuits, an eight-bit current DAC for aperture weighting amplitude control, and a programmable 15-level pulse amplitude modulation (PAM) current-source that does not include a zero level. The fast current sources are
- Device Type: Beamformers
- Features: Other
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Supplier: Microchip Technology, Inc.
Description: configurations, the source voltage of the MOSFET approaches the supply voltage when switched on. To keep the MOSFET turned on, the MIC5018's output drives the MOSFET gate voltage higher than the supply voltage. In a typical high-side
- Features: MOSFET
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Supplier: Infineon Technologies AG
Description: The 600 V CoolMOS™ S7 SJ MOSFET family is optimized for low conduction losses and features the lowest RDS(on) in the market when it comes to high-voltage SJ MOSFETs. It comes with an unprecedented RDS(on) x price figure of merit and is a perfect fit for solid-state circuit
- rDS(on): 0.017 ohms
- QG: 196 nC
- TJ: -55 to 150 C
- VGS(off): 3.5 to 4.5 volts
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Supplier: Infineon Technologies AG
Description: Infineon's 600 V SJ MOSFET in bottom-side cooled package minimizes conduction losses and enables standardized cooling and mounting of the device The 600 V CoolMOS™ S7 SJ MOSFET family is optimized for low conduction losses and features the lowest RDS(on) in the market when it comes to
- rDS(on): 0.04 ohms
- QG: 83 nC
- TJ: -55 to 150 C
- VGS(off): 3.5 to 4.5 volts
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Supplier: Infineon Technologies AG
Description: Infineon's 600 V SJ MOSFET in bottom-side cooled package minimizes conduction losses and enables standardized cooling and mounting of the device The 600 V CoolMOS™ S7 SJ MOSFET family is optimized for low conduction losses and features the lowest RDS(on) in the market when it comes to
- rDS(on): 0.01 ohms
- QG: 318 nC
- TJ: -55 to 150 C
- VGS(off): 3.5 to 4.5 volts
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Supplier: Infineon Technologies AG
Description: Infineon's 600 V SJ MOSFET in bottom-side cooled package minimizes conduction losses and enables standardized cooling and mounting of the device The 600 V CoolMOS™ S7 SJ MOSFET family is optimized for low conduction losses and features the lowest RDS(on) in the market when it comes to
- rDS(on): 0.017 ohms
- QG: 196 nC
- TJ: -55 to 150 C
- VGS(off): 3.5 to 4.5 volts
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: MOSFET; Transistor Polarity: N Channel; Drain Source Voltage, Vds: 20V; Continuous Drain Current, Id: 120A;... Product overview: IRLU3717 from International Rectifier is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery
- PD: 89,000 milliwatts
- Features: MOSFET
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Supplier: Renesas Electronics Corporation
Description: 25V input with output currents up to 15A. The LDO can source up to 2.5A and sink up to -2.0A continuously. Both the LDO output and the 10mA reference buffer output can be made to track the REFIN voltage via a built-in resistive divider. These features make the ISL88550A ideally
- Output Voltage (Volt): 0.7 to 3.5 volts
- Input Voltage (VIN): 2 to 25 volts
- Features: Other
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Supplier: Win Source Electronics
Description: Manufacturer: AMIS Category: Industrial Automation and Controls - Protection Relays & Systems Part Status: Obsolete Drain to Source Voltage (Vdss): 50 V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Rds On (Max) @ Id, Vgs:
- PD: 100,000 milliwatts
- Features: MOSFET
- Package Type: SOT3
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: N CHANNEL, MOSFET, 200V, 32A, DIRECTFET MX, FULL REEL; Transistor Polarity:N Channel; Continuous Drain Current Id:32A; Drain Source Voltage Vds:200V; On Resistance Rds(on):1.4mohm; Rds(on) Test Voltage Vgs:10V; No. of Pins:7 ;RoHS Compliant: Yes Product overview:
- Features: MOSFET
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Supplier: Littelfuse, Inc.
Description: These devices are offered with drain-to-source voltage ratings from 40V to 170V and provide high current capabilities of up to 600 Amperes (Tc=@25oC). The combined high current ratings of these devices and available compact package options provide designers the ability to
- Polarity: N-Channel
- Features: Other
- Package Type: TO-220
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Supplier: Littelfuse, Inc.
Description: These devices are offered with drain-to-source voltage ratings from 40V to 170V and provide high current capabilities of up to 600 Amperes (Tc=@25oC). The combined high current ratings of these devices and available compact package options provide designers the ability to
- Polarity: N-Channel
- Features: Other
- Package Type: TO-263
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Supplier: Littelfuse, Inc.
Description: These devices are offered with drain-to-source voltage ratings from 40V to 170V and provide high current capabilities of up to 600 Amperes (Tc=@25oC). The combined high current ratings of these devices and available compact package options provide designers the ability to
- Polarity: N-Channel
- Features: Other
- Package Type: TO-247
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Supplier: Littelfuse, Inc.
Description: These devices are offered with drain-to-source voltage ratings from 40V to 170V and provide high current capabilities of up to 600 Amperes (Tc=@25oC). The combined high current ratings of these devices and available compact package options provide designers the ability to
- Polarity: N-Channel
- Features: Other
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Metal-Oxide Semiconductor FET (MOSFET) - N-Channel 80V 12A 68A MOSFET Transistor -- 278-IRF6646TRPBFSupplier: ERSAELECTRONICS PTE. LTD.
Description: N CHANNEL MOSFET, 80V, 12A DIRECTFET MN, FULL REEL; Transistor Polarity:N Channel; Continuous Drain Current Id:68A; Drain Source Voltage Vds:80V; On Resistance Rds(on):7.6mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4.9V;RoHS Compliant: Yes
- PD: 2,800 milliwatts
- TJ: -40 C
- Features: MOSFET
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Supplier: Win Source Electronics
Description: Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: Power56 Dimension: 8-PowerWDFN Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 7.4A (Ta), 22A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge:
- V(BR)DSS: 100 volts
- PD: 2,500 to 78,000 milliwatts
- TJ: -55 to 150 C
- Features: MOSFET, Other
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Supplier: ERSAELECTRONICS PTE. LTD.
Description: MOSFET, 25V, 29A, DIRECTFET MX; Transistor Polarity:N Channel; Continuous Drain Current Id:29mA; Drain Source Voltage Vds:25V; On Resistance Rds(on):1.6mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.9V; No. of Pins:5 ;RoHS Compliant: Yes Product
- Features: MOSFET
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Supplier: Win Source Electronics
Description: Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PQFN (5x6) Dimension: 8-PowerVDFN Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 21A (Ta), 100A (Tc) Gate-Source Threshold Voltage: 4V @ 150μA Max Gate Charge:
- V(BR)DSS: 60 volts
- PD: 3,600 to 156,000 milliwatts
- TJ: -55 to 150 C
- Features: MOSFET, Other
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Supplier: Win Source Electronics
Description: Obsolete(EOL) Temperature Range - Operating: -65°C to 175°C (TJ) Case / Package: D2PAK (TO-263AB) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 80A (Ta) Gate-Source Threshold Voltage: 4V @
- V(BR)DSS: 60 volts
- PD: 125,000 milliwatts
- TJ: -65 to 175 C
- Features: MOSFET, Other
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Supplier: Renesas Electronics Corporation
Description: protection. The time to latch-off is independent of device temperature, and magnitude of OC.brbr Each ISL6121 incorporates in a 8 lead SOIC package a 50m? N-channel MOSFET power switch for power control. The switch is driven by a constant current source giving a
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Supplier: Acromag, Inc.
Description: 913MB: 4 current input channels 914MB: 4 voltage input channels 4 input channels 0 to 20mA DC (0 to 20A AC with AC sensor) or ±10V DC input range 4 alarm channels, open drain MOSFETS (1A DC loads, 0 to 35V DC) 10 to 36V DC, 24V AC power Modbus RTU high-speed RS-485 This signal
- Analog Input Channels: 4 #
- Accuracy: 0.1 % FS
- Operating Temperature: -13 to 158 F
- Resolution: 16 bits
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Supplier: Acromag, Inc.
Description: They accommodate wide DC voltage or current ranges. Discrete outputs provide simple on/off switching capability for external devices. Combining analog outputs, on/off controllers, and a network interface in a single package, makes this instrument extremely powerful. Multi-channel
- Digital I/O Channels: 4 #
- Resolution: 12 bits
- Operating Temperature: -13 to 140 F
- Features: Application Software Included, Networkable System, Other
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Supplier: Qorvo
Description: converter to maintain output voltage regulation with input voltages that are above, below or equal to the output voltage. The product is optimized to reduce input current in shipping, shutdown, and standby for applications which are sensitive to quiescent current
- Pin Count: 32
- Number of Cells: 2 to 5
- Maximum Charge Current: 5,000 mA
- Features: Other
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Supplier: Nexperia B.V.
Description: voltage, provided by an internal voltage regulator, is used to supply circuitry in signal paths controlling the low-side and high-side power switches. This enables a low-power operation and a better controlled driver performance irrespective of the IC supply voltage.
- IC Package Type: Other
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Supplier: SAE International
Description: of solenoid current with ripple components due to pulse width modulation (PWM) is one of the key technologies. The proposed current-to-digital converter directly samples the drain-source voltage of the sensing DMOS (double-diffused MOSFET) with an analog-to-digital
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Supplier: Acromag, Inc.
Description: 913MB: 4 current input channels 914MB: 4 voltage input channels 4 input channels 0 to 20mA DC (0 to 20A AC with AC sensor) or ±10V DC input range 4 alarm channels, open drain MOSFETS (1A DC loads, 0 to 35V DC) 10 to 36V DC, 24V AC power Modbus RTU high-speed RS-485 This signal
- Analog Input Channels: 4 #
- Accuracy: 0.1 % FS
- Operating Temperature: -13 to 158 F
- Resolution: 16 bits
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Supplier: Acromag, Inc.
Description: (with IP400) enables self-test and diagnostics to detect system faults. Low drain-to-source ON resistance ensures TTL logic-low compatibility at high currents and reduces power dissipation. Individual channels sink up to 1A DC continuous. No deration of output current required
- Digital I/O Channels: 40 #
- Operating Temperature: -40 to 185 F
- Application: Aerospace / Military, General Lab and Industrial, Medical / Biomedical
- User Interface: None
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Supplier: Broadcom Inc.
Description: The Avago ACPL-337J is a fully featured 4.0A smart gate drive optocoupler device capable of driving high power MOSFET or IGBT directly. The device features rail-to-rail output with high current, integrated LED driver, active Miller clamp, high desaturation (DESAT) blanking
- Rise Time: 0.08 µs
- Collector Emitter Breakdown Voltage: 5 volts
- Operating Temperature: -40 to 105 C
- Input: DC
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Supplier: Broadcom Inc.
Description: The Avago ACPL-336J is a fully featured 2.5A smart gate drive optocoupler device capable of driving high power MOSFET or IGBT directly. The device features rail-to-rail output with high current, integrated LED driver, active Miller clamp, high desaturation (DESAT) blanking
- Rise Time: 0.08 µs
- Collector Emitter Breakdown Voltage: 5 volts
- Operating Temperature: -40 to 105 C
- Input: DC
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Supplier: Renesas Electronics Corporation
Description: with a 10µA current source. Capacitors on each gate create a programmable ramp (soft turn-on) to control in-rush currents. A built-in charge pump supplies the gate drive for the 12V supply N-channel MOSFET switch. Two external current sense resistors and FETs
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medium-voltage power systems where efficiency, thermal stability, and reliable switching are critical. Its low RDS(on) helps reduce conduction losses and heat generation, while moderate gate drive requirements simplify integration into power management and control circuits (read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Win Source Electronics -
provides high current conduction, reduced parasitic inductance, and excellent thermal performance. These features make the devices ideal for motor control, power supplies, renewable energy systems, and other power-hungry applications. The range also includes application-specific MOSFETs (ASFETs) designed (read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Nexperia B.V. -
Wolfspeed offers a family of 1200 V silicon carbide MOSFETs and Schottky diodes that are optimized for use in high power applications such as UPS, motor control and drives, switched-mode power supplies, solar and energy storage systems, electric vehicle charging, high-voltage (read more)
Browse Diodes Datasheets for DigiKey -
applications in -2V to -10V systems. The transistor pairs are matched to offer low input bias current, fast switching speed, and almost infinite current gain in low-frequency environments. The chip is useful for precision current mirrors, sources, voltage choppers, differential amplifier input stages (read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Advanced Linear Devices, Inc. -
The ALD810025 by Advanced Linear Devices is a member of the ALD8100xx family of Supercapacitor Auto Balancing (SAB™) MOSFETs. It excels in voltage and leakage-current regulation for series-connected supercapacitors. By integrating one or more devices across (read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Advanced Linear Devices, Inc. -
, high-efficiency power management in industrial, automotive, and motor control systems. With an 80V drain-source voltage and 140A continuous current capacity, it addresses critical pain points for engineers: heat generation, energy loss, and reliable (read more)
Browse IC Interfaces Datasheets for LIXINC Electronics Co., Limited -
. The chip is suitable for use in precision applications that require very high current gain, beta, such as current mirrors and current sources. It has a high input impedance and a DC current gain of 109, resulting in extremely low current loss through the control gate. Some (read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Advanced Linear Devices, Inc. -
gain (beta), such as current mirrors and current sources. The high input impedance and the high DC current gain of the Field-Effect Transistors result in extremely low current loss through the control gate. The DC current gain is limited by the gate input leakage current, which is specified at 100p (read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Advanced Linear Devices, Inc. -
Voltage Rating: The BSS138PS,115 is capable of handling continuous drain-source voltages up to 50V, making it robust for various electronic designs. Current Capacity: It can support continuous drain currents up to 320m (read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Win Source Electronics -
The ALD1106 MOSFET by Advanced Linear Devices is designed to provide superior precision and performance in low-frequency and near-DC operating environments. It features matched transistor pairs that minimize offset voltage and differential thermal response (read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Advanced Linear Devices, Inc.
Conduct Research Top
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A Digital Constant Current Power LED Driver
will down) solution and the circuit presented here can want to check the LED manufacturer's data sheet to operate from most any input voltage source as long as verify the maximum peak current. it exceeds the forward voltage of the LEDs to be driven. The switching frequency of the buck regulator
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Application Note: Driving Color RGB LEDs with the AAT3123
to 20mA maximum to each of the three red, green, and blue LEDs in a common anode configuration. Color balance and intensity is then controlled via PWM signals to MOSFET switches connected to each LED cathode. Refer to the following application circuit (Figure 1): RGB LEDs have differing forward voltages
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AN211A: Field Effect Transistors in Theory and Practice, Courtesy of Motorla
There are two types of field-effect transistors, the Junction Field-Effect Transistor (JFET) and the "Metal-Oxide Semiconductor" Field-Effect Transistor (MOSFET), or Insulated-Gate Field-Effect Transistor (IGFET). The principles on which these devices operate (current controlled by an electric
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RF current element design for independent control of current amplitude and phase in transmit phased arrays
Imple- mentation of coil integrated RF power MOSFET as voltage controlled current source in a transmit phased array coil.
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Radiofrequency current source (RFCS) drive and decoupling technique for parallel transmit arrays using a high‐power metal oxide semiconductor field‐effect tran...
Implementation of coil inte- grated RF power MOSFET as voltage controlled current source in a transmit phased array coil.
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Verifying global start-up for a Möbius ring-oscillator
We model MOSFETs as voltage controlled current sources with associated capacitances, and we model the interconnect in the oscillator as additional capacitances.
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Automated Technology for Verification and Analysis
We model MOSFETs as voltage con- trolled current sources with associated capacitances, and we model the interconnect in the oscillator as additional capacitances.
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Simultaneous B 1+ homogenization and specific absorption rate hotspot suppression using a magnetic resonance phased array transmit coil
Implementation of coil integrated RF power mosfet as voltage controlled current source in a transmit phased array coil.
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Combination of optimized transmit arrays and some receive array reconstruction methods can yield homogeneous images at very high frequencies
Implementation of coil inte- grated RF power MOSFET as voltage controlled current source in a transmit phased array coil.
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Overcoming high-field RF problems with non-magnetic Cartesian feedback transceivers
(2004) Implementation of coil integrated RF power MOSFET as voltage controlled current source in a transmit phased array coil.
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Applications of RF current sources for transmit phased array
[5] K. Kurpad, E. B. Boskamp, and S. M. Wright, “Implementation of coil integrated RF power MOSFET as voltage controlled current source in a Transmit Phased Array Coil,” Intl. Soc.
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Comparative evaluation of various single phase harmonic filters for non-linear load
The APF consists of an inductor Lc and resistance Rc and a full bridge single phase IGBT or MOSFET based current controlled voltage source inverter with a self-charging capacitor .
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Intelligent field emission arrays
In this thesis, we use MOSFET as a voltage controlled current source to modulate the field emission device with electron supply.