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Supplier: Semtech Corp.
Description: Semtech offers a portfolio of fully integrated Silicon Germanium (SiGe) BiCMOS and pure CMOS transimpedance amplifiers providing wideband, low noise pre-amplification of a current signal from a PIN photodiode or APD. Gennum's TIAs offer best-in-class performance in limiting,
- Data Rate: 0.1550 to 14.3 Gbps
- RoHS Compliant: Yes
- Supply Voltage (VS): 3.3 volts
- Transimpedance: 3 to 63 kohms
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Supplier: Hamamatsu Photonics
Description: Flat response characteristics up to high frequency bands The S9055 Si PIN photodiode delivers a high-speed response exceeding 1 GHz at low bias voltage (VR=2 V). The low capacitance (less than 1 pF) makes the S9055 ideal for combination with high-speed trans-impedance
- Active Area Diameter or Length: 0.2000 mm
- Active Area Height: 0.2000 mm
- Dark Current: 0.1000 nA
- PN, PIN, or Avalanche: PIN Photodiode
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Supplier: Texas Instruments
Description: Monolithic Photodiode and Single-Supply Transimpedance Amplifier 8-PDIP
- IC Package Type: Other
- RoHS Compliant: Yes
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Supplier: Texas Instruments
Description: Monolithic Photodiode and Single-Supply Transimpedance Amplifier 8-SOP
- IC Package Type: Other
- RoHS Compliant: Yes
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Supplier: Hamamatsu Photonics
Description: Flat response characteristics up to high frequency bands The S9055-01 Si PIN photodiodes deliver a high-speed response exceeding 1 GHz at low bias voltage (VR=2 V). The low capacitance (less than 1 pF) makes the S9055-01 ideal for combination with high-speed trans-impedance
- Active Area Diameter or Length: 0.1000 mm
- Active Area Height: 0.1000 mm
- Dark Current: 0.1000 nA
- PN, PIN, or Avalanche: PIN Photodiode
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Supplier: OSI Optoelectronics
Description: FCI-H125G-10 A low noise, high bandwidth photodetector plus transimpedance amplifier designed for short wavelength (850nm) high speed fiber optic data communications. The hybrid incorporates a 250µm diameter large sensing area, high sensitivity silicon photodetector. It also includes a
- Active Area Diameter or Length: 0.2500 mm
- Operating Temperature: -40 to 75 C
- PN, PIN, or Avalanche: PIN Photodiode
- Photodiode Material: Silicon
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Supplier: OSI Optoelectronics
Description: FCI-H155/622M-InGaAs -70 series are high-speed 70µm InGaAs photodetector integrated with wide dynamic range transimpedance amplifier. Combining the detector with the TIA in a hermetically sealed 4 pin TO-46 package provides ideal conditions for high-speed signal detection and
- Active Area Diameter or Length: 0.1200 mm
- Noise Equivalent Power (NEP): 2.66E-15 W/Hz½
- Operating Temperature: -40 to 75 C
- PN, PIN, or Avalanche: PIN Photodiode
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Supplier: OSI Optoelectronics
Description: FCI-H155/622M-InGaAs -70 series are high-speed 70µm InGaAs photodetector integrated with wide dynamic range transimpedance amplifier. Combining the detector with the TIA in a hermetically sealed 4 pin TO-46 package provides ideal conditions for high-speed signal detection and
- Active Area Diameter or Length: 0.0550 mm
- Noise Equivalent Power (NEP): 7.69E-15 W/Hz½
- Operating Temperature: -40 to 75 C
- PN, PIN, or Avalanche: PIN Photodiode
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Supplier: OSI Optoelectronics
Description: FCI-H155/622M-InGaAs -70 series are high-speed 70µm InGaAs photodetector integrated with wide dynamic range transimpedance amplifier. Combining the detector with the TIA in a hermetically sealed 4 pin TO-46 package provides ideal conditions for high-speed signal detection and
- Active Area Diameter or Length: 0.4000 mm
- Noise Equivalent Power (NEP): 4.50E-15 W/Hz½
- Operating Temperature: -40 to 75 C
- PN, PIN, or Avalanche: PIN Photodiode
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Supplier: Newport MKS
Description: The DET-L-SIUV-R-C Silicon Photovoltaic Detector for LIDA™ houses an unbiased, photovoltaic mode operated photodiode coupled to a trans impedance amplifier. The internal 10 mm x 10 mm active area, UV-enhanced Silicon photodiode and low-noise trans impedance amplifier
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Supplier: MACOM
Description: -sensitivity highly-reliable PIN photodiodes and high performance low power consumption MACOM quad Trans-Impedance Amplifier (TIA). The ROSA is assembled in a hermetic-sealed package with an LC receptacle for optical input and two flex circuits for DC/RF electrical connections.
- Amplifier Type: Transimpedance
- Connector Type: LC
- Data Rate: 28000 Mbps
- Photodiode Semiconductor: InGaAs (900nm to 1700nm)
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Supplier: Electro Optical Components, Inc.
Description: Ultra-Low-Noise – Min. NEP 0.7 fW/vHz allows direct detection down to 50fW Transimpedance Amplifier with High Gain up to 1012 V/A Included Wavelength Range from 320 nm to 1700 nm Applications Fluorescence
- Output Type: Voltage Output
- Photosensor Type: PIN Photodiode
- Spectral Response: 320 to 1700 nm
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Supplier: Electro Optical Components, Inc.
Description: By combining state of the art Si and InGaAs photodiodes with the proven and outstanding FEMTO LCA Current Amplifier technology we designed a new family of photoreceivers with a remarkable performance. The LCA-S-400K is available with either a large area Si or InGaAs photodiode
- Output Type: Voltage Output
- Photosensor Type: PIN Photodiode
- Spectral Response: 400 to 1700 nm
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Supplier: Hamamatsu Photonics
Description: Built-in gain-stabilized APD suitable for short pulse light detection This device is for direct TOF (time-of-flight) distance measurement, integrating a Si APD and a transimpedance amplifier. A gain-stabilized APD (GS APD) is used, and there is little gain fluctuation relative to
- Current Output Sensitivity: 0.5000 A/W
- Number of Channels: 1
- Photosensor Type: Avalanche Photodiode
- Spectral Response: 400 to 1100 nm
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Supplier: Hamamatsu Photonics
Description: Built-in gain-stabilized APD suitable for short pulse light detection This device is for direct TOF (time-of-flight) distance measurement, integrating a Si APD and a transimpedance amplifier. A gain-stabilized APD (GS APD) is used, and there is little gain fluctuation relative to
- Current Output Sensitivity: 0.5000 A/W
- Number of Channels: 1
- Photosensor Type: Avalanche Photodiode
- Spectral Response: 400 to 1100 nm
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Supplier: Electro Optical Components, Inc.
Description: low-noise amplifiers. Features Two Si PIN Photodiodes with 0.8 mm Active Diameter Bandwidth DC ... 100 MHz Amplifier Transimpedance (Gain) 50 x 103 V/A Conversion-Gain 28 x 103 V/W (@ 800 nm) Spectral Range 320 ... 1000 nm
- Current Output Sensitivity: 0.5500 A/W
- Output Type: Voltage Output
- Photosensor Type: PIN Photodiode
- Spectral Response: 320 to 1000 nm
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Supplier: Electro Optical Components, Inc.
Description: The series HCA-S-200M Photoreceivers combine fast photodiodes with the proven and outstanding FEMTO HCA Current Amplifier technology. The HCA-S-200M is available with either a fast large area Si or InGaAs photodiode covering a spectral range from 320 to 1000 nm and 900 to 1650
- Output Type: Voltage Output
- Photosensor Type: PIN Photodiode
- Spectral Response: 320 to 1700 nm
- Supply Voltage: 15 volts
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Supplier: Broadcom Inc.
Description: ICs. Avago also offers the same performance in the single channel version, HCPL-0708. Each detector incorporates an integrated photodiode, a high speed transimpedance amplifier, and a voltage comparator with an output driver.
- Collector Emitter Breakdown Voltage: 5 volts
- Isolation Voltage: 3750 volts
- Mounting Option: Surface Mount
- Operating Temperature: -40 to 100 C
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Supplier: Broadcom Inc.
Description: driver IC, a high speed LED and a CMOS detector IC. A CMOS logic input signal controls the LED driver IC which supplies current to the LED. The detector IC incorporates an integrated photodiode, a high-speed transimpedance amplifier, and a voltage comparator with an output
- Isolation Voltage: 1050 volts
- Mounting Option: Surface Mount
- Operating Temperature: -40 to 100 C
- Optocoupler Input: DC
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Supplier: Broadcom Inc.
Description: driver IC, a high speed LED and a CMOS detector IC. A CMOS logic input signal controls the LED driver IC which supplies current to the LED. The detector IC incorporates an integrated photodiode, a high-speed transimpedance amplifier, and a voltage comparator with an output
- Isolation Voltage: 1050 volts
- Mounting Option: Flat Pack
- Operating Temperature: -40 to 85 C
- Optocoupler Input: DC
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Supplier: Broadcom Inc.
Description: driver IC, a high speed LED and a CMOS detector IC. A CMOS logic input signal controls the LED driver IC which supplies current to the LED. The detector IC incorporates an integrated photodiode, a high-speed transimpedance amplifier, and a voltage comparator with an output
- Isolation Voltage: 1050 volts
- Mounting Option: Flat Pack
- Operating Temperature: -40 to 85 C
- Optocoupler Input: DC
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Supplier: RS Components, Ltd.
Description: A range of low input bias current and monolithic electrometer operational amplifiers from Analog Devices. These op amps feature high input impedance and ultra-low input bias currents and are suitable for applications such as electrometer amplifiers, photodiode preamplifiers, pH
- Device Type: Operational Amplifiers
- Package Type: SOIC, Other
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Supplier: RS Components, Ltd.
Description: A range of low input bias current and monolithic electrometer operational amplifiers from Analog Devices. These op amps feature high input impedance and ultra-low input bias currents and are suitable for applications such as electrometer amplifiers, photodiode preamplifiers, pH
- Device Type: Operational Amplifiers
- Package Type: SOIC, Other
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Supplier: RS Components, Ltd.
Description: A range of low input bias current and monolithic electrometer operational amplifiers from Analog Devices. These op amps feature high input impedance and ultra-low input bias currents and are suitable for applications such as electrometer amplifiers, photodiode preamplifiers, pH
- Device Type: Operational Amplifiers
- Package Type: SOIC, Other
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Supplier: RS Components, Ltd.
Description: A range of low input bias current and monolithic electrometer operational amplifiers from Analog Devices. These op amps feature high input impedance and ultra-low input bias currents and are suitable for applications such as electrometer amplifiers, photodiode preamplifiers, pH
- Device Type: Operational Amplifiers
- Package Type: SOIC, Other
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Description: using a progressive optimization of the equalizers, leading to a small number of parameters to optimize simultaneously Presents modifications to the RFT to design trans-impedance microwave amplifiers that are used for photodiodes acting as high impedance current sources
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Supplier: ams
Description: The TSL250RD, TSL251RD, TSL260RD, and TSL261RD are light-to-voltage optical sensors, each combining a photodiode and a trans-impedance amplifier on a single monolithic IC. The TSL250RD and TSL260RD have an equivalent feedback resistance of 16 MO and a photodiode measuring
- Input (Supply) Voltage: 2.7 to 5.5 volts
- Operating Temperature: -25 to 85 C
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. Working Principle of a Transimpedance Amplifier A transimpedance amplifier is a circuit that converts current from a source, like a sensor or a photodiode, into voltage using an op-amp. So what happens is (read more)
Browse Amplifier and Comparator Chips Datasheets for ODG (Origin Data Global) -
-end, variable gain transimpedance amplifier. The low noise performance (NEP) is outstanding and the relatively large sized detectors make optical alignment easy. It has switchable gain from 102 to 108 V/A giving precise and reliable measurements within a wide (read more)
Browse Photosensor Modules Datasheets for Electro Optical Components, Inc.
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Amplifying High-Impedence Sensors ? Photodiode Example
conditioning + circuit used for high-impedance sensors that act like current sensors. FIGURE 1: Transimpedance Amplifier Current sensors connect to a transimpedance amplifier Equivalent Circuit. which converts current to voltage. The design approach illustrated in this application note, using op Step 1: DC
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Using a Digital Potentiometer to Optimize a Precision Single Supply Photo Detect
Photodiodes bridge the gap between light and electronics. Many times precision applications such as CT scanners, blood analyzers, smoke detectors, position sensors, IR pyrometers and chromatographs utilize the basic transimpedance amplifier circuit that transforms light energy into a usable
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High quantum efficiency annular backside silicon photodiodes for reflectance pulse oximetry in wearable wireless body sensors
The noise in the photodiode transimpedance amplifier set-up, figure 3, has contributions from shot noise on the signal itself, shot noise and thermal noise from the diode, noise from the amplifier and thermal noise from the feedback impedance.
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Large-Area, Low-Noise, High Speed, Photodiode-Based Fluorescence
Detectors with Fast Overdrive Recovery
In the photodiode transimpedance amplifier , the feed- back resistor was chosen to be Rf =600 kΩ.
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Fiber-Optic Circuits For Aircraft Engine Controls
The noise equivalent power in optimized PIN photodiode transimpedance amplifiers was measured as a function of temperature from 25 °C to 160 C.
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http://eprints.biblio.unitn.it/116/1/37.pdf
EXACT DESIGN SOLUTIONS FOR PHOTODIODE TRANSIMPEDANCE AMPLIFIERS BASED ON FET INPUT OP-AMPS .
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http://focus.ti.com/lit/ds/symlink/opa2354a-q1.pdf
the end of the datasheet.• Photodiode Transimpedance Amplifiers .
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http://focus.ti.com/lit/ds/symlink/ths4601.pdf
Wideband Photodiode Transimpedance Amplifier .
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Exact design solutions for photodiode transimpedance amplifiers based on FET input OP-AMPs Unitn Eprints Research
Exact design solutions for photodiode transimpedance amplifiers based on FET input OP-AMPs .
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Design of a spectroscopic ellipsometer by synchronous rotation of the polarizer and analyzer in opposite directions
The signal is detected by a silicon photodiode and is then amplified by a photodiode transimpedance amplifier using LMP7721 operational amplifier.
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OPA659 | High Speed Amplifier (>=50MHz) | Operational Amplifier (Op Amp) | Description & parametrics
… operational amplifier with a JFET-input stage to offer an ultra-high dynamic range amplifier for high impedance buffering in data acquisition applications such as oscilloscope front-end amplifiers and machine vision applications such as photodiode transimpedance amplifiers used in wafer inspection.