Photodiode Transimpedance Amplifiers

Description: Semtech offers a portfolio of fully integrated Silicon Germanium (SiGe) BiCMOS and pure CMOS transimpedance amplifiers providing wideband, low noise pre-amplification of a current signal from a PIN photodiode or APD. Gennum's TIAs offer best-in-class performance in limiting,

• Data Rate: 0.155 to 14.3 Gbps
• Transimpedance: 3 to 63 kohms
• Supply Voltage (V_S): 3.3 volts
• Standards and Certifications: RoHS Compliant

Description: Monolithic Photodiode and Single-Supply Transimpedance Amplifier 8-PDIP

• Features: Other, RoHS Compliant

Description: The DET-L-SIUV-R-C Silicon Photovoltaic Detector for LIDA™ houses an unbiased, photovoltaic mode operated photodiode coupled to a trans impedance amplifier. The internal 10 mm x 10 mm active area, UV-enhanced Silicon photodiode and low-noise trans impedance amplifier

Description: Flat response characteristics up to high frequency bands The S9055 Si PIN photodiode delivers a high-speed response exceeding 1 GHz at low bias voltage (VR=2 V). The low capacitance (less than 1 pF) makes the S9055 ideal for combination with high-speed trans-impedance amplifiers.

• Sensitivity: 0.25 A/W
• Spectral Response Range: 320 to 1,000 nm
• Active Area Diameter or Length: 0.20000000000000004 mm
• Active Area Height: 0.20000000000000004 mm

Description: transimpedance amplifier producing a differential output voltage for latching to post amplifiers used in electro-optical receivers and transceivers for gigabit ethernet and Fiber Channel applications up to 1.25Gbps over multi-mode fiber. The photodetector converts the light into

• Spectral Response Range: 1,100 to 1,650 nm
• Active Area Diameter or Length: 0.25 mm
• Operating Temperature: -40 to 75 C
• Photodiode Spectral Response: IR, Visible

Description: FCI-H155/622M-InGaAs-70 series are high-speed 70µm InGaAs photodetector integrated with wide dynamic range transimpedance amplifier. Combining the detector with the TIA in a hermetically sealed 4 pin TO-46 package provides ideal conditions for high-speed signal detection and

• Sensitivity: 0.95 A/W
• Spectral Response Range: 900 to 1,700 nm
• Active Area Diameter or Length: 0.12000000000000001 mm
• Rise Time: 0.2 ns

Description: Ultra-Low-Noise – Min. NEP 0.7 fW/√Hz allows direct detection down to 50fW Transimpedance Amplifier with High Gain up to 1012 V/A Included Wavelength Range from 320 nm to 1700 nm Applications Fluorescence Measurements Spectroscopy Electrophoresis Chromatography Replacement for

• Spectral Response: 320 to 1,700 nm
• Module Type: PIN Photodiode
• Output Type: Voltage Output

Description: range from 400 to 1050 nm and 900 to 1700 nm, respectively. The amplifier transimpedance is 107 V/A resulting in a maximum conversion gain of 9.5 x 106 V/W at 1550 nm for the InGaAs model. Due to the low noise performance of the transimpedance amplifier the minimum NEP is

• Spectral Response: 400 to 1,700 nm
• Module Type: PIN Photodiode
• Output Type: Voltage Output

Description: Built-in gain-stabilized APD suitable for short pulse light detection This device is for direct TOF (time-of-flight) distance measurement, integrating a Si APD and a transimpedance amplifier. A gain-stabilized APD (GS APD) is used, and there is little gain fluctuation relative to

• Number of Channels: 1
• Spectral Response: 400 to 1,100 nm
• Current Output Sensitivity: 0.5 A/W
• Module Type: Avalanche Photodiode

Description: low-noise amplifiers. Features Two Si PIN Photodiodes with 0.8 mm Active Diameter Bandwidth DC ... 100 MHz Amplifier Transimpedance (Gain) 50 x 103 V/A Conversion-Gain 28 x 103 V/W (@ 800 nm) Spectral Range 320 ... 1000 nm Applications Spectroscopy Fast Pulse and

• Spectral Response: 320 to 1,000 nm
• Supply Voltage: 15 volts
• Current Output Sensitivity: 0.55 A/W
• Module Type: PIN Photodiode

Description: incorporates an integrated photodiode, a high speed transimpedance amplifier, and a voltage comparator with an output driver.

• Isolation Voltage: 3,750 volts
• Rise Time: 0.0034999999999999996 µs
• Collector Emitter Breakdown Voltage: 5 volts
• Operating Temperature: -40 to 105 C

Description: Describes the use of the Real Frequency Technique for designing and realizing RF/microwave amplifiers and circuits This book focuses on the authors' Real Frequency Technique (RFT) and its application to a wide variety of multi-stage microwave amplifiers and active filters, and passive

Description: The series HCA-S-200M Photoreceivers combine fast photodiodes with the proven and outstanding FEMTO HCA Current Amplifier technology. The HCA-S-200M is available with either a fast large area Si or InGaAs photodiode covering a spectral range from 320 to 1000 nm and 900 to 1650

• Spectral Response: 320 to 1,700 nm
• Supply Voltage: 15 volts
• Module Type: PIN Photodiode
• Output Type: Voltage Output

Description: Avago also offers the same performance in the single channel version, HCPL-0708. Each detector incorporates an integrated photodiode, a high speed transimpedance amplifier, and a voltage comparator with an output driver.

• Isolation Voltage: 3,750 volts
• Rise Time: 0.02 µs
• Collector Emitter Breakdown Voltage: 5 volts
• Operating Temperature: -40 to 100 C

Description: The TSL250RD, TSL251RD, TSL260RD, and TSL261RD are light-to-voltage optical sensors, each combining a photodiode and a trans-impedance amplifier on a single monolithic IC. The TSL250RD and TSL260RD have an equivalent feedback resistance of 16 MΩ and a photodiode measuring 1

• Input (Supply) Voltage: 2.7 to 5.5 volts
• Operating Temperature: -25 to 85 C
• Sensor Type: Light Sensor

Description: high speed LED and a CMOS detector IC. A CMOS logic input signal controls the LED driver IC which supplies current to the LED. The detector IC incorporates an integrated photodiode, a high-speed transimpedance amplifier, and a voltage comparator with an output driver.

• Isolation Voltage: 1,050 volts
• Rise Time: 0.009 µs
• Operating Temperature: -40 to 85 C
• Input: DC

Description: input signal controls the LED driver IC, which supplies current to the LED. The detector IC incorporates an integrated photodiode, a high speed transimpedance amplifier, and a voltage comparator with an output driver. The ACPL-072L optocouplers are available in the SO-8 package

• Isolation Voltage: 3,750 volts
• Rise Time: 0.009 µs
• Operating Temperature: -40 to 105 C
• Input: AC, DC

Description: high-sensitivity highly-reliable PIN photodiodes and high performance low power consumption MACOM quad Trans-Impedance Amplifier (TIA). The ROSA is assembled in a hermetic-sealed package with an LC receptacle for optical input and two flex circuits for DC/RF electrical connections. The

• Data Rate: 28,000 Mbps
• Sensitivity: -14 dB
• Responsivity: 0.7 A/W
• Photodiode Semiconductor: InGaAs (900nm to 1700nm)

Description: PR5510 can detect the lateral position of a light spot on the sensor. It consists of triangular photodiodes with reciprocal orientation, together with a differential transimpedance amplifier. If illuminated uniformly, the output is Vcc/2; if the light is biased towards one of

• Supply Voltage: 8 volts

Description: reliability which satisfies Telcordia specifications. The term “PINFET” (p-intrinsic-n, field-effect transistor) indicates the integration of a PIN photodiode and a discrete, high-performance transimpedance amplifier stage. Light is coupled into the detector stage through a

• Data Rate: 6 to 350 Mbps
• Sensitivity: -56 to -32 dB
• Dynamic Range: 25 to 53 dB
• Bandwidth: 3 to 250 MHz

Description: OSI Laser Diode, Inc. (LDI) PINAMPs provide a low cost, high performance miniature optical receiver module which integrates a high speed, high responsivity, low leakage current InGaAs photodiode with a GaAs transimpedance amplifier. The transimpedance amplifier

• Data Rate: 4 to 622 Mbps
• Sensitivity: -50 to -33 dB
• Responsivity: 0.85 to 0.9 A/W
• Operating Temperature: -40 to 185 F

Description: F-PD-30-A-H-FCA contains a surface coupled coplanar waveguide PIN photodiode and a linear transimpedance amplifier within a hermetically sealed 14-pin butterfly package. The F-PD-22-H-DIL series is a linear balanced photoreceiver with aconfigurable bandwidth up to 22 GHz,

• Bandwidth: 20,000 MHz
• Features: Other
• Receiver Type: PIN

Description: Precision measurement of optical power from pW to mW. Properties The OPM series of optical power monitors employs photodiodes to measure optical power. Precision dual transimpedance input stages provide for high common mode rejection and linearity throughout the full dynamic range of

• Optical Power Range: 6.499999999999999 dBm
• Wavelength Range: 200 to 2,100 nm
• Operating Temperature: 0 to 60 C
• Test Equipment Type: Bench Top

Description: Precision measurement of optical power from pW to mW. Properties The OPM series of optical power monitors employs photodiodes to measure optical power. Precision dual transimpedance input stages provide for high common mode rejection and linearity throughout the full dynamic range of

• Wavelength Range: 200 to 2,100 nm
• Operating Temperature: 0 to 60 C
• Test Equipment Type: Bench Top
• Features: Fiber Optic Power Meter, Other

Description: pigtailing) Component testing, burn- in, lifetime Quality control OEM (eg: PER measurements) MEASUREMENT PRINCIPLE The OPM400 series of optical power monitors employs photodiodes to measure optical power. Precision single ended transimpedance input st ages to provide for low offset and

• Wavelength Range: 200 to 2,100 nm
• Operating Temperature: 0 to 60 C
• Power Range: 0.003 to 0.030000000000000002 watts
• Optical Meter Type: Power Meter