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Description: XFRMR MOSFET GATE DRIVE 1:1.5
- Mounting / Form Factor: PC / PCB Mount
- Operating Temperature: 0.0 to 70 C
- Transformer Category: Signal / RF Transformer
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Supplier: Infineon Technologies AG
Description: Benefits High power efficiency Higher FETs drive capability Instant FETs protection under abnormal operation Crucial safety margin to drive pulse transformer Potential Applications Server Telecom
- Driver Type: Low-side Gate Driver
- IC Package Type: Other
- Packing Method: Tape Reel
- Peak Output Current: 5 amps
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Supplier: Infineon Technologies AG
Description: Benefits High power efficiency Higher FETs drive capability Instant FETs protection under abnormal operation Crucial safety margin to drive pulse transformer Potential Applications Server Telecom
- Driver Type: Low-side Gate Driver
- IC Package Type: Other
- Packing Method: Tape Reel
- Peak Output Current: 4 amps
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Supplier: Infineon Technologies AG
Description: Benefits High power efficiency Higher FETs drive capability Instant FETs protection under abnormal operation Crucial safety margin to drive pulse transformer Potential Applications Server Telecom
- Driver Type: Low-side Gate Driver
- IC Package Type: Other
- Packing Method: Tape Reel
- Peak Output Current: 5 amps
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Supplier: Infineon Technologies AG
Description: Benefits High power efficiency Higher FETs drive capability Instant FETs protection under abnormal operation Crucial safety margin to drive pulse transformer Potential Applications Server Telecom
- Driver Type: Low-side Gate Driver
- IC Package Type: Other
- Packing Method: Tape Reel
- Peak Output Current: 5 amps
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Supplier: Nexperia B.V.
Description: NGD31251 is a high-frequency, dual channel, non-isolation MOSFET gate driver for high power automotive application. NGD31251 has typical 5 A sink and 5 A source drive current and it can handle -10 V on its input pins, which improves robustness in systems with moderate ground
- IC Package Type: Other
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Supplier: Microchip Technology, Inc.
Description: designed to drive two very low-threshold, high-voltage depletion N-MOSFETs, such as DN2625s, as source drivers. The two DN2625 drains are connected to a center-tap RF pulse transformer. The transformer’s secondary output connects to a cable and piezoelectric or
- IC Package Type: Other
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Supplier: Microchip Technology, Inc.
Description: DN2625 depletion N-type MOSFETs. The MOSFET drains are connected to a center-tap ultrasound frequency pulse transformer. The secondary winding of the transformer can connect to the ultrasound piezo or capacitive transducer via a cable with a good impendence match.
- IC Package Type: Other
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creepage wide body, 16-lead SOIC_IC. Combining high speed CMOS and monolithic transformer technology, these isolation components provide outstanding performance characteristics superior to the alternatives, such as the combination of pulse transformers and gate drivers. The isolators operate with (read more)
Browse Gate Drivers Datasheets for Richardson RFPD -
for power conversion, filtering, isolation and more. Our products include transformers for audio, gate drive, power, medical/dental, wall-mount and plug-in applications; as well as inductors for current sense, common mode, toroidal, filtering and power applications. (read more)
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, isolation and more. Our products include transformers for audio, gate drive, power, medical/dental, wall-mount and plug-in applications; as well as inductors for current sense, common mode, toroidal, filtering and power applications. (read more)
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, allowing for high-frequency operation. The gate drive voltage of the LTC7893 can be precisely adjusted from 4 V to 5.5 V to optimize performance and to allow the use of different GaN FETs or even logic-level MOSFETs. When biased from the boost converter regulator output, the LTC7893 (read more)
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High Frequency driver circuit for MOSFET full bridge Resonant
Converter
Pulse transformer isolates gate drive supply from MOSFET which protects MOSFET from false triggering due to transients created by driver power supply.
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Development of compact high voltage switched mode power supply
for microwave plasma sources supply for low pressure plasma
To provide enough gate voltage for driving the MOSFETs , pulse transformers were applied to the driving circuit as shown in figure 4.
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Understanding the subtleties of brick derating
In many cases the PWM controller is also placed at the secondary side, and the pulse transformer is used for gate drive of the primary MOSFETs .
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The design of front-end DC-DC converters of distributed power supply systems with improved efficiency and stability
The gate - drive signals are fed to the MOSFETs through pulse transformers fed by DS0026 drivers buffered by IRFD9110 and IRFDI10 MOSFETs.
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Design and analysis of an enhanced MOSFET gate driver for pulsed power applications
Index Terms — Gate drive , Pulse circuits, Power MOSFET , MOSFET, Linear Transformer Driver, Boost, Resonant.
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8.18.09 -- Discrete RF Semiconductors: Alive and Well
With a small, surface-mount package featuring rugged housing materials that are highly resistant to the effects of EMI, the SM580 series gate drive transformers from Datatronic provide efficient pulse control in gate drive circuits used in MOSFETs and IGBTs for switch…
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12.8.09 -- Experimental Validation Tool For Cell Phone Forensics Developed
With a small, surface-mount package featuring rugged housing materials that are highly resistant to the effects of EMI, the SM580 series gate drive transformers from Datatronic provide efficient pulse control in gate drive circuits used in MOSFETs and IGBTs for switch…
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Solid state high-voltage crowbar device applicable to helmet-mounted display rapid disconnection
In this circuit, trigger action is provided by a high voltage pulse transformer Ti which in turn is driven by a power MOSFET Qi which gates energy from capacitive energy reservoir Cl .
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Efficient ozone generator using full-bridge inverter and its performance evaluations
The gate drive circuit of MOSFETs , which is combined of a frequency generator circuit, pulse transformer and a protection circuit [5].
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High-voltage wideband switching amplifier for capacitive loads
* The gate drives from the TC4469 to MOSFETS Si and S2 as well as the pulse - coupling transformers are laid out close together including the ground return paths to the chip and its bypassing capacitor.