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Supplier: Renesas Electronics Corporation
Description: Rsup3/sup Technology™ combines the best features of both fixed-frequency and hysteretic PWM control. The PWM frequency is 300kHz during static operation, becoming variable during changes in load, setpoint voltage, and input voltage when changing between battery and AC adapter
- Output Voltage (Volt): 0.5 to 3.3 volts
- Input Voltage (VIN): 3.3 to 25 volts
- Features: Other
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Supplier: Renesas Electronics Corporation
Description: Technology™ combines the best features of both fixed-frequency and hysteretic PWM control. The PWM frequency is 300kHz during static operation, becoming variable during changes in load, setpoint voltage, and input voltage when changing between battery and AC adapter power. The
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Supplier: Renesas Electronics Corporation
Description: implementing a cost effective and space saving power management solution.brbr The PWM modulator of the ISL6353 is based on Intersils Robust Ripple Regulator™ (Rsup3/sup) technology. Compared with the traditional multi-phase buck regulator, the Rsup3/sup modulator commands variable
- Output Voltage (Volt): 0 to 1.52 volts
- Input Voltage (VIN): 4.5 to 25 volts
- Features: Other
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Supplier: Renesas Electronics Corporation
Description: controlled slew-rate features. Robust integrated MOSFET drivers and Schottky bootstrap diode reduce the implementation area and lower component cost. Intersil’s R3 Technology™ combines the best features of both fixed-frequency and hysteretic PWM control. The PWM frequency is
- Output Voltage (Volt): 0.5 to 3.3 volts
- Input Voltage (VIN): 3.3 to 25 volts
- Features: Other
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Supplier: Infineon Technologies AG
Description: CoolMOS™ N-Channel Power MOSFET IPD95R1K2P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPD80R1K4P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPD95R1K2P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPD80R1K4P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET
- Output Current: 1 milliamps
- Form Factor: Integrated Circuit (IC)
- Features: RoHS Compliant
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Supplier: Infineon Technologies AG
Description: integrated circuit Four independent channels Output current programmable with 11 bit resolution Current range = 0 to 1.2A (typ.) with a 0.2Ohm sense resistor Resolution = 0.78125 mA/bit (typ.) with a 0.2Ohm sense resistor +/- 2% full scale error over temperature when autozero is used
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(ON), transforming the device into a variable resistor that adjusts exponentially with VIN. This ensures that each supercapacitor in a series is balanced within specified voltage and current limits. For example, applying a VIN of 2.50V results in an IOUT of 1µA. Increasing VIN by 100mV to 2.60V (read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Advanced Linear Devices, Inc. -
the gate-drain source terminals (VGS = VDS) are connected at a drain-source current of IDS(ON) = 1µA, the gate threshold voltage is set at 1.60V. Different input voltages (VIN = VGS = VDS) generate an Output Current IOUT = IDS(ON), resulting in an effective variable resistor that exponentially (read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Advanced Linear Devices, Inc. -
reduce BOM cost, improve EMI performance, and simplify design iterations. Compared to traditional gate drivers requiring external PWM logic, the FAN7387MX offers built-in intelligence that makes it ideal for modern power conversion topologies. For (read more)
Browse Gate Drivers Datasheets for Win Source Electronics -
Output Current IOUT = IDS(ON), effectively configuring the device as a variable resistor that exponentially adjusts with VIN. This capability ensures that each supercapacitor in a series is balanced within its specified voltage and current limits. For instance, applying VIN = 2.70V results in (read more)
Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Advanced Linear Devices, Inc. -
Industrial machinery Potentiometers vs. Variable Resistors: What’s the Difference? These terms are sometimes used interchangeably but not always (read more)
Browse Potentiometers, Rheostats, and Trimmers Datasheets for ODG (Origin Data Global) -
What is a Rheostat? A rheostat is a variable resistor used to control the current flow in a circuit. Its basic principle is based on Ohm's Law (read more)
Browse Potentiometers, Rheostats, and Trimmers Datasheets for ODG (Origin Data Global) -
limit. You can view them as a smart variable resistor. The selection of the pass transistor has performance implications and drawbacks. Using PNP Transistors can lead to simpler designs and lower self-consumption current. However, they may respond a bit slower when the load (read more)
Browse General Purpose Diodes Datasheets for ODG (Origin Data Global)
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PSpice simulation of the power stage for DC brush motors using state of the art power MOSFETs
In linear mode control – The MOSFET acts like a variable resistor 2. .... In PWM mode control with low switching frequency and no freewheeling path – typical switching frequencies are…
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PWM AC chopper control of single-phase induction motor for variable-speed fan application
In open-loop con- figuration the saw tooth waveform is compared to a reference DC voltage derived by a variable resistor . .... The output signal is then applied to a MOSFET driver which generates two complementary PWM signals.
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Impact of dimming white LEDs: chromaticity shifts due to different dimming methods
For the PWM scheme, the power supplies were set for constant voltage operation and the gate of the MOSFET was driven with a modulated square wave at 1 kHz with varying duty cycle. .... Current measurements were taken across a 1 ohm, 5% tolerance current sense resistor using a digital multimeter.
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PWM-VSI inverter-assisted stand-alone dual stator winding induction generator
To ensure stable operation, a discharge resistor is connected across the charged capacitor through a transistor or MOSFET under PWM duty ratio control. .... The duty ratio control, which seeks to regulate the capacitor voltage, presents a variable resistance (which dissipates…
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Self-oscillating buck driver for power LEDs
The resistor R1 is used to ensure that the MOSFET is turned off at the time the circuit is powered. .... The transistor Q3 can turn on or turn-off the circuit and are typically used to vary the light intensity of the LED by PWM modulation at low frequency.
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The study and implementation of a microprocessor-controlled demagnetizer
Although wecansimilarlyusepulsewidthmodulation( PWM ) techniquesto makethe coil currentsinusoidal-like, thismethodisnot suitableforademagnetizerowing to its electromagnetic interference (EMI)problem and .... We take power MOSFETs as variable resistors (VR) in a demagnetizer.
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A gate drive circuit for gate-turn-off (GTO) devices in series stack.
A resistor divider reduces the feedback signal before sending it to the voltage feedback input pin of the PWM controller, A variable resistor in the divider is used to adjust the level of the feedback voltage and, in turn, to set the … and regulated to supply 15-V power to the logic circuit and the MOSFET drive in the…
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Resonant wireless power transfer to ground sensors from a UAV
The processor uses a PWM signal to control the amount of power the resistor will draw by quickly switching a MOSFET on the Rx Board. .... Similarly, the battery charge rate can be controlled to vary the power draw from the Load Coil.
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A low power electronics converter with input resistance control for piezoelectric energy harvesting
The energy harvesting circuit under study is shown in Fig. 1, which consists of a bridge rectifier with a PWM MOSFET switch and a rechargeable battery. .... The time- varying current source iP (t), resistor RP , and capacitor Cp model a vibrating piezoelectric transducer that converts strain vibratory signals into electric current, which in turn has to be converted into battery charge by the converter.
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Design and analysis of an underwater inductive coupling power transfer system for autonomous underwater vehicle docking applications
The PWM control signal is generated by a PWM gener- ating chip (UCC3895, Unitrode, USA), whose fre- quency can be adjusted by a variable resistor con- nected to it. .... IRFP260N MOSFETs (IR, USA) are selected to build the inverter.