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Supplier: Electro Optical Components, Inc.
Description: Quadrant photodiodes are used for a variety of alignment applications including laser beams and position sensing. They are available in 2.5, 5.0 and 7.9 mm diameter active areas. Quadrant Photodetector Features Si-PIN photodiode Spectral range 400 – 1100
- Active Area Diameter or Length: 2.5 to 7.9 mm
- PN, PIN, or Avalanche: PIN Photodiode
- Photodiode Material: Silicon
- Photodiode Package / Mounting: Leaded, Through Hole Technology (THT)
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Supplier: Electro Optical Components, Inc.
Description: EOC offers a variety of silicon photodiode options from IFW Optronics: Silicon Photodiodes with an Integrated Low Noise JFET Amplifier Quadrant Photodiodes
- Active Area Diameter or Length: 2.5 to 7.9 mm
- PN, PIN, or Avalanche: PIN Photodiode
- Photodiode Material: Silicon
- Photodiode Package / Mounting: Leaded, Through Hole Technology (THT)
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Supplier: First Sensor AG
Description: Quadrant photodiodes are discrete components that usually feature four optically active areas separated by a small gap. These photodiodes are used in many applications for detecting the position of laser beams, collimators and other applications to facilitate adjustment.
- Active Area Diameter or Length: 14 mm
- Dark Current: 10 nA
- PN, PIN, or Avalanche: PIN Photodiode
- Photodiode Package / Mounting: Through Hole Technology (THT), Other
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Supplier: First Sensor AG
Description: Quadrant photodiodes are discrete components that usually feature four optically active areas separated by a small gap. These photodiodes are used in many applications for detecting the position of laser beams, collimators and other applications to facilitate adjustment.
- Active Area Diameter or Length: 5.3 mm
- Dark Current: 1.5 nA
- PN, PIN, or Avalanche: PIN Photodiode
- Photodiode Package / Mounting: Surface Mount Technology (SMT), Other
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Supplier: OSI Optoelectronics
Description: QD7-0-SD or QD50-0-SD are quadrant photodiode arrays with associated circuitry to provide two difference signals and a sum signal. The two difference signals are voltage analogs of the relative intensity difference of the light sensed by opposing pairs of the photodiode
- Active Area Diameter or Length: 8 mm
- Dark Current: 15 nA
- Operating Temperature: -40 to 100 C
- PN, PIN, or Avalanche: PIN Photodiode
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Supplier: OSI Optoelectronics
Description: is ±2%. The circuit on the opposite page represents a typical biasing and detection circuit set up for both bi-cells and quad-cells. For position calculations and further details, refer to "Photodiode Characteristics" section of the catalog. Product Applications
- Active Area Diameter or Length: 1.3 mm
- Active Area Height: 2.5 mm
- Dark Current: 0.1500 nA
- Operating Temperature: -40 to 100 C
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Supplier: Opto Diode Corporation, an ITW Company
Description: FEATURES Circular active area (4 quadrants) TO-5, 5 pin package 100% internal QE
- Active Area Diameter or Length: 1.25 mm
- Active Area Height: 1.25 mm
- Operating Temperature: -10 to 40 C
- Photodiode Package / Mounting: Leaded
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Supplier: OSI Optoelectronics
Description: FCI-InGaAs-QXXX series are large active area InGaAs photodiodes segmented into four separate active areas. These photodiodes come in 1mm and 3mm active area diameter. The InGaAs Quad series with high response uniformity and the low cross talk between the elements are ideal for accurate
- Active Area Diameter or Length: 1 mm
- Dark Current: 15 nA
- Noise Equivalent Power (NEP): 1.20E-14 W/Hz½
- Operating Temperature: -40 to 75 C
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Supplier: OSI Optoelectronics
Description: FCI-InGaAs-QXXX series are large active area InGaAs photodiodes segmented into four separate active areas. These photodiodes come in 1mm and 3mm active area diameter. The InGaAs Quad series with high response uniformity and the low cross talk between the elements are ideal for accurate
- Active Area Diameter or Length: 3 mm
- Dark Current: 100 nA
- Noise Equivalent Power (NEP): 2.50E-14 W/Hz½
- Operating Temperature: -40 to 75 C
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Supplier: Hamamatsu Photonics
Description: Quadrant Si PIN photodiode The S4349 is a quadrant Si PIN photodiode having sensitivity in the UV to near IR spectral range. A quadrant element format allows position sensing such as for laser beam axis alignment.
- Array: Yes
- Dark Current: 0.2000 nA
- PN, PIN, or Avalanche: PIN Photodiode
- Photodiode Material: Silicon
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Supplier: TE Connectivity
Description: Sensor Application : Laser Beam Position Sensor, Ellipsometer, Pulsed Light Detection, Optical Tweezers, Autocollimators Product Type Features Optical Detector Type : Quadrant Pin Photodiode Optical Sensor Product Type
- Operating Temperature: -40 to 414 F
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Supplier: TE Connectivity
Description: Sensor Application : Optical Tweezers, Laser Beam Position Sensor, Autocollimators, Pulsed Light Detection, Ellipsometer Product Type Features Optical Detector Type : Quadrant Pin Photodiode Optical Sensor Product Type
- Operating Temperature: -40 to 414 F
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