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Supplier: Accuris
Description: Chemical analysis of raw materials and refractory products containing silicon-carbide, silicon-nitride, silicon-oxynitride and sialon Part 4: XRD methods
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Supplier: Accuris
Description: Chemical analysis of raw materials and refractory products containing silicon-carbide, silicon-nitride, silicon-oxynitride and sialon \x96 Part 4: XRD methods
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Supplier: Accuris
Description: Chemical analysis of raw materials and refractory products containing silicon-carbide, silicon-nitride, silicon-oxynitride and sialon \x97 Part 4: XRD methods
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Supplier: Accuris
Description: Chemical analysis of raw materials and refractory products containing silicon-carbide, silicon-nitride, silicon-oxynitride and sialon - Part 4: XRD methods (ISO 21068-4:2024)
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Supplier: Thermal Ceramics
Description: the key to their superior performance in demanding applications. The MORSIL® nitride bonding system allows nitride bonded refractories to out-perform other silicon carbide based refractories using silicate, alumina silica, silicon oxynitride and beta silicon carbide bond
- Type: Specialty / Other
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Supplier: AENOR
Description: Chemical analysis of raw materials and refractory products containing silicon-carbide, silicon-nitride, silicon-oxynitride and sialon - Part 4: XRD methods (ISO 21068-4:2024) (Endorsed by Asociación Española de Normalización in August of 2024.)
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Supplier: AENOR
Description: Chemical analysis of raw materials and refractory products containing silicon-carbide, silicon-nitride, silicon-oxynitride and sialon - Part 1: General information, terminology and sample preparation (ISO 21068-1:2024) (Endorsed by Asociación Española de Normalización in June of
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Supplier: AENOR
Description: Chemical analysis of raw materials and refractory products containing silicon-carbide, silicon-nitride, silicon-oxynitride and sialon - Part 2: Determination of volatile components, total carbon, free carbon, silicon carbide, total and free silicon, free and
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Supplier: AENOR
Description: Chemical analysis of raw materials and refractory products containing silicon-carbide, silicon-nitride, silicon-oxynitride and sialon - Part 3: Determination of nitrogen, oxygen and metallic and oxidic constituents (ISO 21068-3:2024) (Endorsed by Asociación Española de
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Supplier: Richardson RFPD
Description: The 400S series Precision Tolerance, Thin Film, NPO RF Microwave capacitors is constructed with a low loss silicon dioxide and silicon oxynitride dielectric along with high quality sputtered electrode materials to ensure superior performance. The 400S series offers the tightest
- Capacitance Range: 3.30E-6 microF
- DC Rated Voltage Range (WVDC): 100 volts
- Lead / Termination Type: Other
- Mounting Style: Other
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Supplier: Richardson RFPD
Description: The 400L series Precision Tolerance, Thin Film, NPO RF Microwave capacitors is constructed with a low loss silicon dioxide and silicon oxynitride dielectric along with high quality sputtered electrode materials to ensure superior performance. The 400L series offers the tightest
- Capacitance Range: 3.00E-6 microF
- DC Rated Voltage Range (WVDC): 50 volts
- Lead / Termination Type: Other
- Mounting Style: Other
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Supplier: Richardson RFPD
Description: ATC 400 Z Series Precision Tolerance NPO RF Microwave Capacitors. The 400Z series Precision Tolerance, Thin Film, NPO RF Microwave capacitors is constructed with a low loss silicon dioxide and silicon oxynitride dielectric along with high quality sputtered electrode materials to
- Capacitance Range: 2.00E-7 microF
- DC Rated Voltage Range (WVDC): 100 volts
- Lead / Termination Type: Other
- Mounting Style: Other
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Supplier: Richardson RFPD
Description: ATC 400 Z Series Precision Tolerance NPO RF Microwave Capacitors. The 400Z series Precision Tolerance, Thin Film, NPO RF Microwave capacitors is constructed with a low loss silicon dioxide and silicon oxynitride dielectric along with high quality sputtered electrode materials to
- Capacitance Range: 2.50E-6 microF
- DC Rated Voltage Range (WVDC): 25 volts
- Lead / Termination Type: Other
- Mounting Style: Other
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Supplier: Linde North America, Inc.
Description: Semiconductor Grade: =99.998% Isotopic Enrichement: =99 atom% Deuterated Ammonia is used in Gigabyte DRAM production as a source of deuterium in silicon nitride and silicon oxynitride passivation films. The heavier mass of the deuterium is desired to enhance the lifetime of
- Composition: Pure Gas
- Concentration: 100 %
- Nitrogen and Nitrogen Compounds: Ammonia
- Product Forms: Gas
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insulating ceramic material. Typically, it is used in applications where high load-bearing capacity, thermal stability and wear resistance are required. Sialon (Silicon Aluminium Oxynitride) is a silicon nitride ceramic with a small percentage of aluminum oxide added. It is a nonporous (read more)
Browse Production Machining Datasheets for Top Seiko Co., Ltd.
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http://dspace.mit.edu/bitstream/handle/1721.1/38682/164436344-MIT.pdf?sequence=2
These waveguides, consisting of a silicon oxynitride core (n = 1.6) and a silicon dioxide cladding (n = 1.45) were deposited via plasma-enhanced chemical vapor deposition (PECVD).
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http://dspace.mit.edu/bitstream/handle/1721.1/30250/60822479-MIT.pdf?sequence=2
Sputtered Silicon Oxynitride for Microphotonics: .
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High Dielectric Constant Materials
We have now reached the point, however, where the conventional scaling methodology utilizing silicon dioxide (SiO2) and subsequently silicon oxynitride (SiOxNy) has essentially reached the tolerable power limit for high-performance MOSFET ICs and stand-by (direct tunneling) leakage current for low …
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Dielectric Films for Advanced Microelectronics Complete Document
6.3 Atomic Structure of Silicon Oxynitride .
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Quantitative analysis of silicon- and aluminium-oxynitride films with EPMA, SIMS, hf-SNMS, hf-GD-OES and FT-IR
The precision for the measurements of the aluminium oxyni- tride films is even slightly better than the already excel- lent precision of silicon oxynitride film measurements.
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The Bonding Structure and Compositional Analysis of Plasma Enhanced and Low Pressure Chemical Vapor Deposited Silicon Dielectric Films
Analysis data indi- cates that the silicon oxynitride films (RI=1.75-1.78), de- posited by both processes, may be the most stable oxynitride where mixed silicon oxynitride tetrahedral Np-Si-Op bonding structures are most abundant.
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http://dspace.mit.edu/bitstream/handle/1721.1/82421/862818782-MIT.pdf?sequence=2
Silicon oxynitride waveguide fabrication was optimized for integration onto insertable silicon probes.
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Simulation and fabrication of silicon-oxynitride rib structure arrayed waveguide grating device
[1] Ren´e M. de Ridder, Kerstin Worhoff, Alfred Driessen, Paul V. Lambeck, and Hans Albers, “ Silicon Oxynitride Planar Waveguiding Structures for Application in Optical Communication”, IEEE J. Select.
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Effect of si—h and n—h bonds on electrical properties of plasma deposited silicon nitride and oxynitride films
Silicon oxynitride films with refractive indices of 1.75-1.80, as-deposited and after annealing in forming gas (10% H2 + 90% N2) at various tem- peratures, were found to have stable (Si--H/N--H) bonding ratios, lower silicon dan- gling bond …
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Chemical stability of silicon nitride and oxynitride powders
The nitriding of elemental silicon leads to the formation of silicon oxynitride , Si2ON2, as well as of silicon nitride.