Products/Services for Trw Transistor
-
Transistors - (919 companies)Transistors are small, versatile semiconductor devices designed to switch or amplify electronic signals and power. Almost all electronic devices today contain one or more transistors. Some transistors are individually packaged, but many more...Transistor TypePolarityPackage Type -
RF Transistors - (315 companies)RF transistors are designed to handle high-power radio frequency (RF) signals in devices such as stereo amplifiers, radio transmitters, and television monitors. RF transistors are designed to handle high-power radio frequency (RF) signals in devices... -
Darlington Transistors - (125 companies)Darlington transistors (Darlington pairs) are semiconductor devices that combine two bipolar transistors in a single device. They provide high current gain (commonly written SS) and require less space than configurations that use two discrete... -
Bipolar RF Transistors - (185 companies)Bipolar RF transistors consist of an N-type or P-type layer sandwiched between two layers of the opposite type. They are designed to handle high-power radio frequency (RF) signals in devices such as stereo amplifiers, radio transmitters... -
RF MOSFET Transistors - (92 companies)MOSFET RF transistors are metal-oxide semiconductor field-effect transistors (MOSFETs) that are designed to handle high-power RF signals from devices such as stereo amplifiers, radio transmitters, TV monitors, etc. MOSFET RF transistors... -
Power Bipolar Transistors - (87 companies)Power bipolar transistors are semiconductors in which a base n-type or p-type layer is sandwiched between emitter and collector layers of the opposite type. The junctions between the semiconductor sections amplify weak incoming electrical signals...
-
Insulated Gate Bipolar Transistors (IGBT) - (204 companies)Insulated gate bipolar transistors (IGBT) are bipolar transistors with an insulated gate. They combine the advantages of the bipolar transistor (high voltage and current) with the advantages of the MOSFET (low power consumption and high switching...
-
Small-Signal Bipolar Transistors (BJT) - (157 companies)Small-signal bipolar transistors (BJT) are semiconductors that amplify small AC or DC signals. They consist of a base n-type or p-type layer sandwiched between emitter and collector layers of the opposite type. Small signal bipolar junction...
-
Junction Field-Effect Transistors (JFET) - (94 companies)Junction field-effect transistors (JFET) consist of a semiconductor channel in which the width and the conductivity of the channel is controlled by the space-charge region associated with the p-n region. Junction field effect transistors (JFET...
-
Unijunction Transistors (UJT) - (20 companies)Unijunction transistors (UJT) are three-terminal devices that exhibit a negative resistance characteristic. Unijunction Transistors (UJTs) Information. Unijunction transistors (UJTs) are three-terminal devices that have only one PN junction. When...
Product News
-
Win Source Electronics
MMBT3904LT3G NPN Bipolar Transistor Product Overview The MMBT3904LT3G from ON Semiconductor is a versatile NPN bipolar transistor, widely used in various electronic applications for its reliability and performance. Key Features. Collector-Emitter Voltage (VCEO): 40V. Collector-Base Voltage (VCBO): 60V. Emitter-Base Voltage (VEBO): 6V. Continuous Collector Current (IC): 200mA. DC Current Gain (hFE): 100 to 300. Collector-Emitter Saturation Voltage (Vce (sat)): 300mV @ 5mA, 50mA. Maximum Power Dissipation: 300mW. Frequency... (read more)Browse Transistors Datasheets for Win Source Electronics -
Win Source Electronics
ON Semi SMMBT3904LT3G 40V NPN Transistor The SMMBT3904LT3G from ON Semiconductor is a high-performance NPN bipolar junction transistor (BJT) tailored for general-purpose amplifier applications. With a compact SOT-23-3 package, this transistor is designed to deliver efficient performance in a variety of electronic circuits, especially where space and performance are crucial. It offers a collector-emitter voltage (Vceo) of 40V and a collector current (Ic) of 200mA, making it suitable for a wide range of applications, from audio signal... (read more)Browse Transistors Datasheets for Win Source Electronics -
Fujipoly® America Corp.
Sarcon® TIM Cases for Cooler Transistors In an effort to streamline your manufacturing process and improve transistor cooling, Fujipoly (R) offers a large assortment of box-shaped Sarcon (R) thermal interface caps. These cases are available in standard sizes to fit many transistors and can be custom ordered to your exact specifications. Installation takes seconds by sliding over the heat-generating component. Once fitted, unwanted heat is dissipated to the surrounding environment or nearby heatsinks. Depending on the power and cooling... (read more)Browse Thermal Compounds and Thermal Interface Materials Datasheets for Fujipoly® America Corp. -
LIXINC Electronics Co., Limited
Microchip 2N2907AUB PNP Bipolar Transistor The Microchip 2N2907AUB is a high-performance PNP bipolar transistor offering excellent flexibility for multiple electronic applications. With its robust 600mA collector current capacity and a collector-emitter voltage (VCEO) of 60V, this component is designed to meet the needs of engineers working on a wide range of designs. Its compact 3-SMD package makes it well-suited for space-constrained environments, providing engineers with an easy-to-integrate solution for both low and medium-power... (read more) -
LIXINC Electronics Co., Limited
2N2907AUB High-Current PNP Transistor The 2N2907AUB is a high-performance PNP bipolar junction transistor (BJT) manufactured by Roving Networks / Microchip Technology. Designed as a surface-mount device with a compact 3-SMD no-lead package, it supports a maximum collector current of 600mA and a collector-emitter breakdown voltage of 60V. With a low saturation voltage of 1.6V at 50mA to 500mA and a minimum DC current gain (hFE) of 100 at 150mA and 10V, this transistor offers efficient switching and amplification capabilities... (read more) -
Rochester Electronics
Authorized Source: IGBT, MOSFETs, Transistors All of Rochester 's in-stock devices are 100% authorized, traceable, certified, and guaranteed factory-direct and risk-free from our supplier partners including Infineon, Nexperia, onsemi, Renesas, and many more. Additionally, we stock a large selection of power management, diodes, and protection devices that are commonly used within these same designs. (read more)Browse Metal-Oxide Semiconductor FET (MOSFET) Datasheets for Rochester Electronics -
Win Source Electronics
ULN2803ADWR Darlington Transistor Array IC The ULN2803ADWR is a versatile Darlington transistor array from Texas Instruments designed to drive high-power devices with ease. With eight Darlington pairs, it supports currents up to 500mA per channel, making it an excellent choice for controlling a wide range of loads from microcontroller or logic-level signals. It offers robust performance with built-in suppression diodes for inductive load protection, making it ideal for applications like industrial control systems, automotive electronics... (read more)Browse Transistors Datasheets for Win Source Electronics -
DigiKey
STDRIVEG600 Gate Driver for GaN Transistors STMicroelectronics' STDRIVEG600 is a single-chip half-bridge gate driver for enhancement mode GaN FETs or N-channel power MOSFETs. The high-side section is designed to stand a voltage up to 600 V. It is suitable for applications with bus voltage up to 500 V. The STDRIVEG600 can drive high-speed silicon and GaN FETs thanks to the high current capability, short propagation delay of 45 ns in typical conditions, and operation with a supply voltage down to 5 V. The dV/dt immunity is high: +-200 V/ns. (read more)Browse Gate Drivers Datasheets for DigiKey -
Nexperia B.V.
Video: Strengths of Nexperia’s bipolar transistors In this demo, Nexperia's high power Bipolar Junction Transistors (BJT) are utilized as a high voltage current source in an LED lighting application. The set-up shows the well established discrete solution - a combination of precision shunt regulators with power bipolar transistors in a current sink configuration. This linear regulation approach is used as an output stage prior to a boost stage and offers robust and sustainable operation of the LEDs. Nexperia 's power bipolar transistors in DPAK... (read more)Browse Power Bipolar Transistors Datasheets for Nexperia B.V. -
Qorvo
40W, DC-6GHz, GaN on SiC RF Transistors The QPD1035 is a 40W discrete GaN on SiC HEMT transistor operating from DC to 6 GHz from a 50V supply rail. The device has an input pre-match and is ideally suitable for broadband amplifier applications for pulsed and CW operation. Lead free and RoHS compliant. Gain, P3dB, and Drain Efficiency values - typical EVB performance at 5.65 GHz. (read more)Browse Transistors Datasheets for Qorvo
More Information
Indicates content that may require registration and/or purchase.
-
Wideband ultra-low noise cryogenic InP IF amplifiers for the Herschel mission radiometers
Chips are represented in scale; (a) measures 0.33×0.42 mm. (a) and (b) are TRW transistors with 0.1×200µm gate.
-
Cryogenic wide-band ultra-low-noise IF amplifiers operating at ultra-low DC power
The pad parasitic values for the TRW transistor com- pared to Mitsubishi and Chalmers are lower due to the much smaller pads of the TRW transistor (Fig. 1).
-
RF/Microwave Circuit Design for Wireless Applications 2nd Edition Complete Document
3.12.7 Example 4: 90-W Push–Pull BJT Amplifier at 430 MHz The last complete application we want to take a look at is a 90-W-output push–pull amplifier using two TRW transistors (that are no longer made—an all-too …
-
RF/Microwave Circuit Design for Wireless Applications Complete Document
The last complete application we want to examine is a 90-W output, push-pull amplifier using two TRW transistors (that are no longer made—an all-too-frequent occurrence after a design is complete, resulting in a scramble for replacements).
-
Microwave Field-Effect Transistors: Theory, design and applications
Figure 11.28 Noise Figure and Gain of0.25jum Gate-Length HEMT ( TRW transistor ) .
-
The Design of Linearizing Networks for High-Power Varactor-Tuned Frequency Modulators
an MSC 83018 or a TRW 63601 transistor .
-
Effects of Fast Temperature Cycling on Aluminum and Gold Metal Systems
Temperature stressed life tests under rf conditions on microwave power transistors at TRW , MSC' and GE2 have been valuable, both from the point of view of establish- ing estimated MTF at realistic temperatures and in eluc- idating the failure mechanisms.
-
High-voltage thyristor strings for inverter applications
Transistor Development TRW Semiconductors, Inc.
-
Determination of the current distribution in power transistors by use of infrared techniques
Transistor Development TRW Semiconductors, Inc.
-
A low-noise, GaAs/AlGaAs, microwave frequency-synthesizer IC
For the past 13 years, he has led the development and production of heterojunction bipolar transistors at TRW .
