-
Supplier: ODG (Origin Data Global)
Description: Transistor gasket/Nylon gasket
-
Supplier: ERSAELECTRONICS PTE. LTD.
Description: replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 10V, 0.035A. Search-friendly keywords include transistor, BJT, switching, amplification, 10V, 0.035A, Bipolar Transistor, Bipolar RF Transistors. This
- Transistor Type: Bipolar RF Transistors
-
Supplier: ERSAELECTRONICS PTE. LTD.
Description: replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 10V, 0.02A. Search-friendly keywords include transistor, BJT, switching, amplification, 10V, 0.02A, Bipolar Transistor, Bipolar RF Transistors. This
- Transistor Type: Bipolar RF Transistors
-
-
Supplier: ERSAELECTRONICS PTE. LTD.
Description: replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 8V, 0.03A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 8V, 0.03A, MOSFET Transistor, Single Diodes. This
- Transistor Type: MOSFET
Find Suppliers by Category Top
More Information Top
Indicates content that may require registration and/or purchase.
-
Wideband ultra-low noise cryogenic InP IF amplifiers for the Herschel mission radiometers
Chips are represented in scale; (a) measures 0.33×0.42 mm. (a) and (b) are TRW transistors with 0.1×200µm gate.
-
Cryogenic wide-band ultra-low-noise IF amplifiers operating at ultra-low DC power
The pad parasitic values for the TRW transistor com- pared to Mitsubishi and Chalmers are lower due to the much smaller pads of the TRW transistor (Fig. 1).
-
RF/Microwave Circuit Design for Wireless Applications 2nd Edition Complete Document
3.12.7 Example 4: 90-W Push–Pull BJT Amplifier at 430 MHz The last complete application we want to take a look at is a 90-W-output push–pull amplifier using two TRW transistors (that are no longer made—an all-too …
-
RF/Microwave Circuit Design for Wireless Applications Complete Document
The last complete application we want to examine is a 90-W output, push-pull amplifier using two TRW transistors (that are no longer made—an all-too-frequent occurrence after a design is complete, resulting in a scramble for replacements).
-
Microwave Field-Effect Transistors: Theory, design and applications
Figure 11.28 Noise Figure and Gain of0.25jum Gate-Length HEMT ( TRW transistor ) .
-
The Design of Linearizing Networks for High-Power Varactor-Tuned Frequency Modulators
an MSC 83018 or a TRW 63601 transistor .
-
Effects of Fast Temperature Cycling on Aluminum and Gold Metal Systems
Temperature stressed life tests under rf conditions on microwave power transistors at TRW , MSC' and GE2 have been valuable, both from the point of view of establish- ing estimated MTF at realistic temperatures and in eluc- idating the failure mechanisms.
-
High-voltage thyristor strings for inverter applications
Transistor Development TRW Semiconductors, Inc.
-
Determination of the current distribution in power transistors by use of infrared techniques
Transistor Development TRW Semiconductors, Inc.
-
A low-noise, GaAs/AlGaAs, microwave frequency-synthesizer IC
For the past 13 years, he has led the development and production of heterojunction bipolar transistors at TRW .