Photonics and Lasers

Chapter 14 - Photodiode Detectors

Chapter 14

 

Photodiode Detectors

We saw in the previous chapter that photoconductive detectors suffer from two principle drawbacks: a poor time response, due to the long electron lifetime, and significant shot noise from the high level of dark current. Both of these problems are remedied in the photodiode detector, shown schematically in Fig. 14-1. In this device, light incident on the p-n junction of a semiconductor creates electron-hole pairs, which are swept out of the depletion region by the electric field there. Current flows in the external circuit only while charges are moving through this E field region, so the time response of the detector can be made quite fast. The p-n junction also provides a potential barrier for majority charge carriers, greatly reducing the amount of dark current and associated shot noise.

In this chapter, we discuss some important characteristics of photodiode detectors, including their behavior as electrical circuit elements, their time response, and their signal-to-noise properties.

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