Properties of Silicon Germanium and SiGe: Carbon

| AC | alternating current |
| AES | Auger electron spectroscopy |
| AFM | atomic force microscopy |
| APD | avalanche photodetector |
| ATG | Asaro-Tiller-Grinfeld |
| BC | base-collector |
| BE | base-emitter |
| BJT | bipolar junction transistor |
| BTE | Boltzmann transport equation |
| CB | conduction band |
| CML | current mode logic |
| CMOS | complementary metal oxide semiconductor |
| CMP | chemical mechanical polishing |
| CPA | coherent potential approximation |
| CR | cyclotron resonance |
| CV | capacitance voltage |
| CVD | chemical vapour deposition |
| 1D | one-dimensional |
| 2D | two-dimensional |
| 3D | three-dimensional |
| 2DCG | two-dimensional carrier gas |
| 2DEG | two-dimensional electron gas |
| 2DHG | two-dimensional hole gas |
| DBRT | double barrier resonant tunnelling |
| DC | direct current |
| DF | transmission electron microscopy dark field imaging |
| DLTS | deep level transient spectroscopy |
| ECL | emitter-coupled logic |
| EELS | electron energy loss spectroscopy |
| EHD | electron-hole droplet |
| EXAFS | extended X-ray absorption fine-structure |
| fcc | face-centred-cubic |
| FET | field effect transistor |
| FQHE | fractional quantum Hall effect |
| GSMBE | gas source molecular beam epitaxy |
| HBT | heterojunction bipolar transistor |
| HEMT | high electron mobility transistor |
| HFET | hetero field effect transistor |
| HH | heavy hole |
| HRTEM | high-resolution transmission electron microscopy |
| IC | integrated circuit |
| IR | infrared |
| ITO | indium tin oxide |
| LA | longitudinal acoustic |
| LACBED | large angle convergent beam |
| LEED | low energy electron diffraction |
| LEEM | low energy electron microscopy |
| LH | light hole |
| LO | longitudinal optical |
| LPCVD | low-pressure chemical vapour deposition |
| LPE | liquid phase epitaxy |
| LRO | long-range ordering |
| MAG | maximum available gain |
| MB | Matthews and Blakeslee |
| MBE | molecular beam epitaxy |
| MC | Monte Carlo |
| MCPA | molecular coherent potential approximation |
| MESFET | metal-semiconductor field effect transistor |
| MFP | mean free path |
| ML | monolayer |
| MODFET | modulation-doped field effect transistor |
| MODQW | modulation-doped quantum well |
| MOS | metal oxide semiconductor |
| MOSFET | metal oxide semiconductor field effect transistor |
| MQW | multiple quantum... |