TABLE OF CONTENTS | Acronym | Chapter | Meaning |
|---|---|---|
| AC | 5 | alternating current |
| ADM | 6 | addressable memory |
| AES | 2, 4 | Auger electron spectroscopy |
| AFM | 6 | atomic force microscopy |
| ATM | 2 | asynchronous transfer mode |
| BOX | 1, 3 6 | buried oxide |
| BSOI | 6 | bonded silicon-on-insulator |
| CAD | 3 | computer aided design |
| CAGR | 1 | compound annual growth rate |
| CMOS | 1 3, 5, 6 | complementary metal-oxide semiconductor |
| CMP | 1 | chemical-mechanical polishing |
| COS | 5 | corona oxide semiconductor |
| DC | 5 | direct current |
| DIBL | 5 | drain induced barrier lowering |
| DRAM | 4, 6 | dynamic random-access memory |
| FD-MOS | 3 | fully depleted metal oxide semiconductor |
| FET | 1, 5, 6 | field-effect transistor |
| FZ | 2 | float-zone |
| GOI | 5 | gate oxide integrity |
| GXR | 5 | glancing X-ray reflection |
| HBT | 3 | heterojunction bipolar transistor |
| HTA | 3 | high temperature anneal |
| IBS | 3 | ion beam synthesis |
| IC | 1 4, 6 | integrated circuit |
| IR | 5 | infrared |
| ITOX | 2 6 | internal thermal oxidation |
| ITRS | 3 | International Technology Roadmap for Semiconductors |
| LD | 6 | low-dose |
| LII | 3, 4 | light ion implantation |
| LSI | 1, 2 | large scale integration |
| MEMS | 3 | microelectromechanical systems |
| MLD | 1, 4, 6 | modified low-dose |
| MOS | 1, 3, 5 | metal oxide semiconductor |
| MOSFET | 2, 5, 6 | metal oxide semiconductor field-effect transistor |
| MSI | 1 | million square inch |
| PC | 5 | photoconductivity |
| PD-MOS | 3 | partially depleted metal oxide semiconductor |
| PIG | 2, 3 | Penning ionisation gauge |
| PIII | 3 | plasma immersion ion implantation |
| RF | 1, 6 | radio frequency |
| RIE | 5 | reactive ion etching |
| RMS | 5, 6 | root mean square |
| RT | 4, 6 | room temperature |
| SE |
