OVERVIEW

SIMOX, separation-by-implanted-oxygen, is a method of fabrication of silicon-on-insulator (SOI) structures and wafers by implanting high doses of oxygen and annealing at high temperature. SIMOX distinguishes itself among the SOI fabrication techniques by excellent uniformity of thin film layers, low defect density, and feasibility of patterned SOI wafers. Suitable for large area wafers and volume production, SIMOX SOI has shown the capability to support present LSI applications [1].

For many years, considerations have been given to whether SOI may become a mainstream technology or will only remain in niche applications. Finally, an unavoidable need to solve the problem of power consumption and boost performance of scaled down circuits has led to the recognition of the benefits of SOI. As shown in FIGURE 1.1, the International Technology Roadmap for Semiconductors finds SOI wafers as a starting substrate solution for the upcoming hp65 technology node [2]. The pre-production qualification stage is seen to come in year 2006, followed by developments of next generation SOI substrates enhanced with high resistivity silicon and strained layers.

Figure 1.1: Starting material solutions for future technology nodes as outlined in the 2003 edition of International Technology Roadmap for Semiconductors [2].

Concurrently, a steady growth of demand for SOI wafers is forecasted by market research [3]. The increase in demand for SOI wafers is expected to arise first from the demand in high-end applications such as data processing, communications and consumer electronics. With prevalence of 0.13 m and 0.09 m processes and reduced cost per...